JP2017178642A - Pzt圧電体膜及びその形成方法並びにpzt圧電体膜形成用組成物 - Google Patents
Pzt圧電体膜及びその形成方法並びにpzt圧電体膜形成用組成物 Download PDFInfo
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- JP2017178642A JP2017178642A JP2016065025A JP2016065025A JP2017178642A JP 2017178642 A JP2017178642 A JP 2017178642A JP 2016065025 A JP2016065025 A JP 2016065025A JP 2016065025 A JP2016065025 A JP 2016065025A JP 2017178642 A JP2017178642 A JP 2017178642A
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- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- YGASJBMUYYODRY-UHFFFAOYSA-K samarium(3+) triacetate trihydrate Chemical compound O.O.O.[Sm+3].CC([O-])=O.CC([O-])=O.CC([O-])=O YGASJBMUYYODRY-UHFFFAOYSA-K 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- WMOVHXAZOJBABW-UHFFFAOYSA-N tert-butyl acetate Chemical compound CC(=O)OC(C)(C)C WMOVHXAZOJBABW-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
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Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
【解決手段】圧電体膜21がNd、Pr、Sm、Eu、Gd、Dy又はErの希土類元素Xを少なくとも1種含有し、粒径が1μm以上であって、かつ圧電体膜21の結晶配向性と異なる結晶粒22の数が膜表面672μm2当たり1個以下であり、圧電体膜21中に含まれるZr及びTiの金属原子数100に対する希土類元素Xの割合が0.5≦希土類元素X≦3であるPb、Zr及びTiを含有するペロブスカイト構造のPZT圧電体膜21。
【選択図】図1
Description
先ず、Pb化合物として酢酸鉛三水和物(Pb源)、X元素化合物として酢酸ネオジム一水和物(X元素源)、Zr化合物としてテトラジルコニウムブトキシド(Zr源)、Ti化合物としてテトラチタニウムイソプロポキシド(Ti源)をそれぞれ用意し、これらPZT前駆体を、表1に示す所望の金属原子比を与える割合になるように秤量した。
表1に示す条件を変更したこと以外は、実施例1と同様にしてPZT圧電体膜形成用組成物を調製し、更にPZT圧電体膜を得た。
実施例1〜16及び比較例1〜9で形成したPZT圧電体膜について、以下の(i)〜(vi)の評価を行った。これらの結果を、以下の表2に示す。
21 PZT圧電体膜
22 異常結晶粒
Claims (5)
- Pb、Zr及びTiを含有するペロブスカイト構造のPZT圧電体膜において、
前記圧電体膜がNd、Pr、Sm、Eu、Gd、Dy又はErの希土類元素Xを少なくとも1種含有し、
粒径が1μm以上であって、かつ前記圧電体膜の結晶配向性と異なる結晶粒の数が膜表面672μm2当たり1個以下であり、
前記圧電体膜中に含まれるZr及びTiの金属原子数100に対する前記希土類元素Xの割合が0.5≦希土類元素X≦3であることを特徴とするPZT圧電体膜。 - X線回折による{100}面配向度が90%以上であることを特徴とする請求項1記載のPZT圧電体膜。
- Pb、Zr及びTiを含有するペロブスカイト構造のPZT圧電体膜の形成に用いられる組成物において、
前記圧電体膜がNd、Pr、Sm、Eu、Gd、Dy又はErの希土類元素Xを少なくとも1種含有し、
前記組成物がPZT前駆体としてPb化合物、Zr化合物及びTi化合物以外に、前記希土類元素Xの酢酸塩を少なくとも1種含有する
ことを特徴とするPZT圧電体膜形成用組成物。 - 請求項3記載のPZT圧電体膜形成用組成物を基板に塗布して塗膜を形成する工程と、
前記塗膜を280〜320℃の温度で仮焼成した後、前記仮焼成時の温度よりも高い温度で焼成する工程と
を含むPZT圧電体膜の形成方法。 - 前記焼成を酸素と窒素を含有する混合ガス雰囲気下で行う請求項4記載のPZT圧電体膜の形成方法。
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