JP2012500481A5 - - Google Patents

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Publication number
JP2012500481A5
JP2012500481A5 JP2011523327A JP2011523327A JP2012500481A5 JP 2012500481 A5 JP2012500481 A5 JP 2012500481A5 JP 2011523327 A JP2011523327 A JP 2011523327A JP 2011523327 A JP2011523327 A JP 2011523327A JP 2012500481 A5 JP2012500481 A5 JP 2012500481A5
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JP
Japan
Prior art keywords
layer
substrate
conductive
reticle
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011523327A
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English (en)
Japanese (ja)
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JP2012500481A (ja
JP5449358B2 (ja
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Application filed filed Critical
Priority claimed from PCT/EP2009/005490 external-priority patent/WO2010020337A1/en
Publication of JP2012500481A publication Critical patent/JP2012500481A/ja
Publication of JP2012500481A5 publication Critical patent/JP2012500481A5/ja
Application granted granted Critical
Publication of JP5449358B2 publication Critical patent/JP5449358B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011523327A 2008-08-21 2009-07-29 レチクル、リソグラフィ装置、およびレチクルを生成する方法 Expired - Fee Related JP5449358B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9083808P 2008-08-21 2008-08-21
US61/090,838 2008-08-21
PCT/EP2009/005490 WO2010020337A1 (en) 2008-08-21 2009-07-29 Euv reticle substrates with high thermal conductivity

Publications (3)

Publication Number Publication Date
JP2012500481A JP2012500481A (ja) 2012-01-05
JP2012500481A5 true JP2012500481A5 (enExample) 2012-09-13
JP5449358B2 JP5449358B2 (ja) 2014-03-19

Family

ID=41114883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011523327A Expired - Fee Related JP5449358B2 (ja) 2008-08-21 2009-07-29 レチクル、リソグラフィ装置、およびレチクルを生成する方法

Country Status (7)

Country Link
US (1) US8736810B2 (enExample)
JP (1) JP5449358B2 (enExample)
KR (1) KR101670318B1 (enExample)
CN (1) CN102132209B (enExample)
NL (1) NL2003305A (enExample)
TW (1) TWI434132B (enExample)
WO (1) WO2010020337A1 (enExample)

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JP2011222958A (ja) * 2010-03-25 2011-11-04 Komatsu Ltd ミラーおよび極端紫外光生成装置
WO2012114980A1 (ja) * 2011-02-24 2012-08-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5742389B2 (ja) * 2011-03-31 2015-07-01 凸版印刷株式会社 Ｅｕｖ露光用マスクの修正方法およびｅｕｖ露光用マスク
DE102011080052A1 (de) 2011-07-28 2013-01-31 Carl Zeiss Smt Gmbh Spiegel, optisches System mit Spiegel und Verfahren zur Herstellung eines Spiegels
DE102011086513A1 (de) 2011-11-16 2013-05-16 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
DE102012213794A1 (de) 2012-08-03 2014-02-06 Carl Zeiss Smt Gmbh Maskeninspektionsverfahren und Maskeninspektionssystem für EUV-Masken
US9354508B2 (en) * 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP2015018918A (ja) * 2013-07-10 2015-01-29 キヤノン株式会社 反射型原版、露光方法及びデバイス製造方法
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
TWI463251B (zh) * 2013-10-17 2014-12-01 hui ying Lin 具環境資訊感測之光罩結構
WO2015153774A1 (en) * 2014-04-02 2015-10-08 Zygo Corporation Photo-masks for lithography
KR102246875B1 (ko) 2014-11-13 2021-04-30 삼성전자 주식회사 그라파이트 층을 갖는 펠리클을 제조하는 방법
KR102254103B1 (ko) * 2015-01-07 2021-05-20 삼성전자주식회사 지지 층을 이용한 펠리클 제조 방법
KR20160101588A (ko) * 2015-02-17 2016-08-25 에스케이하이닉스 주식회사 열팽창에 의한 오버레이 패턴 변형을 억제하는 포토마스크 블랭크 및 포토마스크와, 포토마스크 블랭크를 이용한 포토마스크 제조방법
JP2018508048A (ja) * 2015-03-12 2018-03-22 レイヴ リミテッド ライアビリティ カンパニー 間接的表面清浄化装置および方法
KR102756397B1 (ko) * 2015-10-06 2025-01-16 에이에스엠엘 홀딩 엔.브이. 리소그래피 장치의 물체를 유지하는 척과 클램프 및 리소그래피 장치의 클램프에 의해 유지되는 물체의 온도를 제어하는 방법
US11448955B2 (en) * 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
KR102848805B1 (ko) 2019-07-31 2025-08-22 삼성전자주식회사 Euv 레티클 검사 방법, 레티클 제조 방법 및 그를 포함하는 반도체 소자의 제조 방법
JP7402344B2 (ja) 2020-01-27 2023-12-20 ヘレーウス コナミック ノース アメリカ エルエルシー 半導体用途のための高純度コーディエライト材料

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JP5053696B2 (ja) * 2007-04-26 2012-10-17 信越化学工業株式会社 静電チャック

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