CN102132209B - 具有高热传导率的euv掩模版基底 - Google Patents
具有高热传导率的euv掩模版基底 Download PDFInfo
- Publication number
- CN102132209B CN102132209B CN200980132629.9A CN200980132629A CN102132209B CN 102132209 B CN102132209 B CN 102132209B CN 200980132629 A CN200980132629 A CN 200980132629A CN 102132209 B CN102132209 B CN 102132209B
- Authority
- CN
- China
- Prior art keywords
- optical layers
- conductive layer
- substrate
- mask
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 181
- 230000005855 radiation Effects 0.000 claims abstract description 105
- 239000011521 glass Substances 0.000 claims abstract description 45
- 229910052878 cordierite Inorganic materials 0.000 claims abstract description 31
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims description 148
- 239000000463 material Substances 0.000 claims description 46
- 238000000059 patterning Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 12
- 230000007547 defect Effects 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 abstract description 13
- 239000006094 Zerodur Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 214
- 238000005516 engineering process Methods 0.000 description 24
- 238000000151 deposition Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 238000010276 construction Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 238000005498 polishing Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000005368 silicate glass Substances 0.000 description 7
- 238000011144 upstream manufacturing Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 5
- 238000001540 jet deposition Methods 0.000 description 5
- 238000004062 sedimentation Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- GNKTZDSRQHMHLZ-UHFFFAOYSA-N [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] Chemical compound [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] GNKTZDSRQHMHLZ-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000005022 packaging material Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 239000006112 glass ceramic composition Substances 0.000 description 3
- 239000002241 glass-ceramic Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 241000486661 Ceramica Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000012940 design transfer Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9083808P | 2008-08-21 | 2008-08-21 | |
| US61/090,838 | 2008-08-21 | ||
| PCT/EP2009/005490 WO2010020337A1 (en) | 2008-08-21 | 2009-07-29 | Euv reticle substrates with high thermal conductivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102132209A CN102132209A (zh) | 2011-07-20 |
| CN102132209B true CN102132209B (zh) | 2014-07-16 |
Family
ID=41114883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980132629.9A Expired - Fee Related CN102132209B (zh) | 2008-08-21 | 2009-07-29 | 具有高热传导率的euv掩模版基底 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8736810B2 (enExample) |
| JP (1) | JP5449358B2 (enExample) |
| KR (1) | KR101670318B1 (enExample) |
| CN (1) | CN102132209B (enExample) |
| NL (1) | NL2003305A (enExample) |
| TW (1) | TWI434132B (enExample) |
| WO (1) | WO2010020337A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011222958A (ja) * | 2010-03-25 | 2011-11-04 | Komatsu Ltd | ミラーおよび極端紫外光生成装置 |
| WO2012114980A1 (ja) * | 2011-02-24 | 2012-08-30 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| JP5742389B2 (ja) * | 2011-03-31 | 2015-07-01 | 凸版印刷株式会社 | Ｅｕｖ露光用マスクの修正方法およびｅｕｖ露光用マスク |
| DE102011080052A1 (de) | 2011-07-28 | 2013-01-31 | Carl Zeiss Smt Gmbh | Spiegel, optisches System mit Spiegel und Verfahren zur Herstellung eines Spiegels |
| DE102011086513A1 (de) | 2011-11-16 | 2013-05-16 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie |
| DE102012213794A1 (de) | 2012-08-03 | 2014-02-06 | Carl Zeiss Smt Gmbh | Maskeninspektionsverfahren und Maskeninspektionssystem für EUV-Masken |
| US9354508B2 (en) * | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| JP2015018918A (ja) * | 2013-07-10 | 2015-01-29 | キヤノン株式会社 | 反射型原版、露光方法及びデバイス製造方法 |
| JP6303346B2 (ja) * | 2013-09-09 | 2018-04-04 | 凸版印刷株式会社 | 反射型マスクブランクおよび反射型マスク |
| TWI463251B (zh) * | 2013-10-17 | 2014-12-01 | hui ying Lin | 具環境資訊感測之光罩結構 |
| WO2015153774A1 (en) * | 2014-04-02 | 2015-10-08 | Zygo Corporation | Photo-masks for lithography |
| KR102246875B1 (ko) | 2014-11-13 | 2021-04-30 | 삼성전자 주식회사 | 그라파이트 층을 갖는 펠리클을 제조하는 방법 |
| KR102254103B1 (ko) * | 2015-01-07 | 2021-05-20 | 삼성전자주식회사 | 지지 층을 이용한 펠리클 제조 방법 |
| KR20160101588A (ko) * | 2015-02-17 | 2016-08-25 | 에스케이하이닉스 주식회사 | 열팽창에 의한 오버레이 패턴 변형을 억제하는 포토마스크 블랭크 및 포토마스크와, 포토마스크 블랭크를 이용한 포토마스크 제조방법 |
| JP2018508048A (ja) * | 2015-03-12 | 2018-03-22 | レイヴ リミテッド ライアビリティ カンパニー | 間接的表面清浄化装置および方法 |
| KR102756397B1 (ko) * | 2015-10-06 | 2025-01-16 | 에이에스엠엘 홀딩 엔.브이. | 리소그래피 장치의 물체를 유지하는 척과 클램프 및 리소그래피 장치의 클램프에 의해 유지되는 물체의 온도를 제어하는 방법 |
| US11448955B2 (en) * | 2018-09-27 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask for lithography process and method for manufacturing the same |
| KR102848805B1 (ko) | 2019-07-31 | 2025-08-22 | 삼성전자주식회사 | Euv 레티클 검사 방법, 레티클 제조 방법 및 그를 포함하는 반도체 소자의 제조 방법 |
| JP7402344B2 (ja) | 2020-01-27 | 2023-12-20 | ヘレーウス コナミック ノース アメリカ エルエルシー | 半導体用途のための高純度コーディエライト材料 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159643A (en) * | 1999-03-01 | 2000-12-12 | Advanced Micro Devices, Inc. | Extreme ultraviolet lithography reflective mask |
| CN1488994A (zh) * | 2002-08-02 | 2004-04-14 | Ф�ز������쳧 | 用于特殊微型光刻的基片 |
| US6806006B2 (en) * | 2002-07-15 | 2004-10-19 | International Business Machines Corporation | Integrated cooling substrate for extreme ultraviolet reticle |
| CN101030041A (zh) * | 2005-10-28 | 2007-09-05 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01175734A (ja) | 1987-12-29 | 1989-07-12 | Canon Inc | 反射型マスク及びその製造方法 |
| DE3856054T2 (de) | 1987-02-18 | 1998-03-19 | Canon K.K., Tokio/Tokyo | Reflexionsmaske |
| JPH0868898A (ja) | 1994-08-29 | 1996-03-12 | Nikon Corp | 反射鏡およびその製造方法 |
| AU5597000A (en) | 1999-06-07 | 2000-12-28 | Regents Of The University Of California, The | Coatings on reflective mask substrates |
| US7105836B2 (en) * | 2002-10-18 | 2006-09-12 | Asml Holding N.V. | Method and apparatus for cooling a reticle during lithographic exposure |
| TWI254841B (en) | 2002-12-23 | 2006-05-11 | Asml Netherlands Bv | Lithographic apparatus |
| DE10302342A1 (de) * | 2003-01-17 | 2004-08-05 | Schott Glas | Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür |
| DE10317792A1 (de) | 2003-04-16 | 2004-11-11 | Schott Glas | Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung |
| US8105457B2 (en) | 2003-12-22 | 2012-01-31 | Asml Netherlands B.V. | Method for joining at least a first member and a second member, lithographic apparatus and device manufacturing method, as well as a device manufactured thereby |
| US7193228B2 (en) | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
| JP2005268359A (ja) | 2004-03-17 | 2005-09-29 | Nikon Corp | ミラー及び照明光学装置 |
| US7781047B2 (en) * | 2004-10-21 | 2010-08-24 | Eastman Kodak Company | Polymeric conductor donor and transfer method |
| JP5243692B2 (ja) * | 2004-12-22 | 2013-07-24 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 光学乾燥フィルム及び乾燥フィルムを有する光学デバイス形成方法 |
| DE602005011394D1 (de) * | 2004-12-22 | 2009-01-15 | Rohm & Haas Elect Mat | Optische Trockenfilme und Verfahren zur Herstellung optischer Vorrichtungen mit Trockenfilmen |
| EP1674905B1 (en) | 2004-12-22 | 2008-10-15 | Rohm and Haas Electronic Materials, L.L.C. | Methods of forming optical devices having polymeric layers |
| JP2006177740A (ja) * | 2004-12-22 | 2006-07-06 | Nikon Corp | 多層膜反射鏡及びｅｕｖ露光装置 |
| DE102005027697A1 (de) | 2005-06-15 | 2006-12-28 | Infineon Technologies Ag | EUV-Reflexionsmaske und Verfahren zu deren Herstellung |
| US20070170379A1 (en) * | 2006-01-24 | 2007-07-26 | Nikon Corporation | Cooled optical filters and optical systems comprising same |
| JP4737426B2 (ja) * | 2006-04-21 | 2011-08-03 | 信越化学工業株式会社 | フォトマスクブランク |
| US7223515B1 (en) * | 2006-05-30 | 2007-05-29 | 3M Innovative Properties Company | Thermal mass transfer substrate films, donor elements, and methods of making and using same |
| JP5053696B2 (ja) * | 2007-04-26 | 2012-10-17 | 信越化学工業株式会社 | 静電チャック |
-
2009
- 2009-07-29 NL NL2003305A patent/NL2003305A/en not_active Application Discontinuation
- 2009-07-29 JP JP2011523327A patent/JP5449358B2/ja not_active Expired - Fee Related
- 2009-07-29 WO PCT/EP2009/005490 patent/WO2010020337A1/en not_active Ceased
- 2009-07-29 US US13/054,008 patent/US8736810B2/en not_active Expired - Fee Related
- 2009-07-29 CN CN200980132629.9A patent/CN102132209B/zh not_active Expired - Fee Related
- 2009-07-29 KR KR1020117006507A patent/KR101670318B1/ko not_active Expired - Fee Related
- 2009-08-11 TW TW098127002A patent/TWI434132B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159643A (en) * | 1999-03-01 | 2000-12-12 | Advanced Micro Devices, Inc. | Extreme ultraviolet lithography reflective mask |
| US6806006B2 (en) * | 2002-07-15 | 2004-10-19 | International Business Machines Corporation | Integrated cooling substrate for extreme ultraviolet reticle |
| CN1488994A (zh) * | 2002-08-02 | 2004-04-14 | Ф�ز������쳧 | 用于特殊微型光刻的基片 |
| CN101030041A (zh) * | 2005-10-28 | 2007-09-05 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201013304A (en) | 2010-04-01 |
| JP2012500481A (ja) | 2012-01-05 |
| US20110116068A1 (en) | 2011-05-19 |
| NL2003305A (en) | 2010-03-10 |
| WO2010020337A1 (en) | 2010-02-25 |
| KR20110046545A (ko) | 2011-05-04 |
| CN102132209A (zh) | 2011-07-20 |
| KR101670318B1 (ko) | 2016-10-28 |
| JP5449358B2 (ja) | 2014-03-19 |
| US8736810B2 (en) | 2014-05-27 |
| TWI434132B (zh) | 2014-04-11 |
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