JP2012243871A - 半導体素子及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 533
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000002131 composite material Substances 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims description 88
- 230000007423 decrease Effects 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 20
- -1 nitride compound Chemical class 0.000 claims 1
- 230000008859 change Effects 0.000 description 41
- 229910002704 AlGaN Inorganic materials 0.000 description 15
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
【解決手段】基板と、基板の上方に形成されたバッファ領域と、バッファ領域上に形成された活性層と、活性層上に形成された少なくとも2つの電極とを備え、バッファ領域は、第1の格子定数を有する第1半導体層と、第1の格子定数と異なる第2の格子定数を有する第2半導体層と、第1の格子定数と第2の格子定数との間の第3の格子定数を有する第3半導体層とが順に積層した複合層を少なくとも一層有する半導体素子。
【選択図】図1
Description
特許文献1 特開2003−59948号公報
特許文献2 特開2007−88426号公報
特許文献3 特開2009−289956号公報
Claims (10)
- 基板と、
前記基板の上方に形成されたバッファ領域と、
前記バッファ領域上に形成された活性層と、
前記活性層上に形成された少なくとも2つの電極と
を備え、
前記バッファ領域は、
第1の格子定数を有する第1半導体層と、
前記第1半導体層に接して形成され、第1の格子定数より小さい第2の格子定数を有する第2半導体層と、
前記第1の格子定数と前記第2の格子定数との間の第3の格子定数を有する第3半導体層とが順に積層した複合層を少なくとも一層有する半導体素子。 - 前記第1半導体層の熱膨張係数、前記第2半導体層の熱膨張係数及び前記第3半導体層の熱膨張係数は、前記基板の熱膨張係数より大きく、前記第3半導体層の熱膨張係数は、前記第1半導体層の熱膨張係数と前記第2半導体層の熱膨張係数との間の値を有する請求項1に記載の半導体素子。
- 前記基板と前記バッファ領域との間に、前記第1の格子定数より小さい格子定数及び前記基板の熱膨張係数より大きい熱膨張係数を有する介在層をさらに備える請求項1または2に記載の半導体素子。
- 前記第1半導体層、前記第2半導体層及び前記第3半導体層は、窒化物系化合物半導体を含む請求項1から3のいずれか一項に記載の半導体素子。
- 前記3半導体層の格子定数は、前記基板に近い方から遠い方に向かって増加している請求項1から4のいずれか一項に記載の半導体素子。
- 前記第1の格子定数は、前記基板の格子定数より小さい請求項1から5のいずれか一項に記載の半導体素子。
- 前記第3半導体層は、厚さが前記第2半導体層より薄く、前記第1半導体層または前記第2半導体層と同一組成の層を、前記第2半導体層から離間した位置に有する請求項1から6のいずれか一項に記載の半導体素子。
- 前記第3半導体層は、前記第2半導体層との境界及び前記第1半導体層との境界の少なくとも一方に、厚さが前記第2半導体層より薄く、且つ、前記境界において前記第3半導体層と接する層とは異なる組成の層を有する、請求項1から7のいずれか一項に記載の半導体素子。
- 前記第1半導体層はAlx1Iny1Ga1−x1−y1N(ただし、0≦x1<1、0≦y1≦1、x1+y1≦1)を含み、
前記第2半導体層はAlx2Iny2Ga1−x2−y2N(ただし、0<x2≦1、0≦y2≦1、x2+y2≦1)を含み、
前記第3半導体層はAlx3Iny3Ga1−x3−y3N(ただし、0<x3<1、0≦y3≦1、x3+y3≦1)を含み、
x1≦x3≦x2であり、
前記第3半導体層は、Alの割合が前記基板に近い側から遠い側に向かって減少する請求項1から8のいずれか一項に記載の半導体素子。 - 基板を用意する工程と、
前記基板の上方にバッファ領域を形成する工程と、
前記バッファ領域上に活性層を形成する工程と、
前記活性層上に少なくとも2つの電極を形成する工程と
を備え、
前記バッファ領域を形成する工程は、
第1の格子定数を有する第1半導体層を形成する工程と、
前記第1の格子定数より小さい第2の格子定数を有する第2半導体層を、前記第1半導体層に接して形成する工程と、
前記第1の格子定数と前記第2の格子定数との間の第3の格子定数を有する第3半導体層を形成する工程とを順に含むサイクルを少なくとも一回繰り返す工程とを有する半導体素子の製造方法。
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JP2011110689A JP5804768B2 (ja) | 2011-05-17 | 2011-05-17 | 半導体素子及びその製造方法 |
EP12785747.2A EP2662882A4 (en) | 2011-05-17 | 2012-05-10 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR |
CN2012800117921A CN103403840A (zh) | 2011-05-17 | 2012-05-10 | 半导体元件及其制造方法 |
PCT/JP2012/003076 WO2012157228A1 (ja) | 2011-05-17 | 2012-05-10 | 半導体素子及びその製造方法 |
US13/952,647 US20130307023A1 (en) | 2011-05-17 | 2013-07-28 | Semiconductor device and method for manufacturing semiconductor device |
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Cited By (15)
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JP2013070065A (ja) * | 2011-09-08 | 2013-04-18 | Toshiba Corp | 窒化物半導体素子および窒化物半導体素子の製造方法 |
JP5362085B1 (ja) * | 2012-09-05 | 2013-12-11 | 株式会社東芝 | 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法 |
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JP2014067908A (ja) * | 2012-09-26 | 2014-04-17 | Toshiba Corp | 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法 |
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JP2016513356A (ja) * | 2012-12-18 | 2016-05-12 | エルジー シルトロン インコーポレイテッド | 半導体基板及びその製造方法 |
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JP2018503968A (ja) * | 2014-11-18 | 2018-02-08 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 六方格子結晶構造を有するiii−v族半導体層を含んだ半導体構造 |
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Also Published As
Publication number | Publication date |
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WO2012157228A1 (ja) | 2012-11-22 |
JP5804768B2 (ja) | 2015-11-04 |
US20130307023A1 (en) | 2013-11-21 |
EP2662882A4 (en) | 2014-10-29 |
EP2662882A1 (en) | 2013-11-13 |
CN103403840A (zh) | 2013-11-20 |
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