JP2012204548A - 表示装置およびその製造方法 - Google Patents

表示装置およびその製造方法 Download PDF

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Publication number
JP2012204548A
JP2012204548A JP2011066747A JP2011066747A JP2012204548A JP 2012204548 A JP2012204548 A JP 2012204548A JP 2011066747 A JP2011066747 A JP 2011066747A JP 2011066747 A JP2011066747 A JP 2011066747A JP 2012204548 A JP2012204548 A JP 2012204548A
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Japan
Prior art keywords
protective film
layer
insulating film
wiring
display device
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Pending
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JP2011066747A
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English (en)
Japanese (ja)
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JP2012204548A5 (https=
Inventor
Kazuhiko Tokunaga
和彦 徳永
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011066747A priority Critical patent/JP2012204548A/ja
Priority to US13/403,735 priority patent/US8673661B2/en
Publication of JP2012204548A publication Critical patent/JP2012204548A/ja
Publication of JP2012204548A5 publication Critical patent/JP2012204548A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2011066747A 2011-03-24 2011-03-24 表示装置およびその製造方法 Pending JP2012204548A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011066747A JP2012204548A (ja) 2011-03-24 2011-03-24 表示装置およびその製造方法
US13/403,735 US8673661B2 (en) 2011-03-24 2012-02-23 Display apparatus and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011066747A JP2012204548A (ja) 2011-03-24 2011-03-24 表示装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2012204548A true JP2012204548A (ja) 2012-10-22
JP2012204548A5 JP2012204548A5 (https=) 2014-05-01

Family

ID=46876574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011066747A Pending JP2012204548A (ja) 2011-03-24 2011-03-24 表示装置およびその製造方法

Country Status (2)

Country Link
US (1) US8673661B2 (https=)
JP (1) JP2012204548A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014080826A1 (ja) * 2012-11-21 2014-05-30 シャープ株式会社 表示装置
JP2014207292A (ja) * 2013-04-11 2014-10-30 株式会社ジャパンディスプレイ 薄膜トランジスタ及びそれを用いた表示装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012204548A (ja) * 2011-03-24 2012-10-22 Sony Corp 表示装置およびその製造方法
US20160104669A1 (en) * 2014-10-08 2016-04-14 Infineon Technologies Ag Semiconductor structure with improved metallization adhesion and method for manufacturing the same
CN107293493A (zh) * 2017-06-06 2017-10-24 武汉华星光电技术有限公司 铟镓锌氧化物薄膜晶体管的制作方法

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JP5668917B2 (ja) * 2010-11-05 2015-02-12 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP2012204548A (ja) * 2011-03-24 2012-10-22 Sony Corp 表示装置およびその製造方法
TWI455322B (zh) * 2011-04-22 2014-10-01 Au Optronics Corp 薄膜電晶體及其製造方法
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JP2007073559A (ja) * 2005-09-02 2007-03-22 Kochi Prefecture Sangyo Shinko Center 薄膜トランジスタの製法
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JP2009260378A (ja) * 2005-09-29 2009-11-05 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014080826A1 (ja) * 2012-11-21 2014-05-30 シャープ株式会社 表示装置
JPWO2014080826A1 (ja) * 2012-11-21 2017-01-05 シャープ株式会社 表示装置
JP2014207292A (ja) * 2013-04-11 2014-10-30 株式会社ジャパンディスプレイ 薄膜トランジスタ及びそれを用いた表示装置
US10283644B2 (en) 2013-04-11 2019-05-07 Japan Display Inc. Thin film transistor having stable threshold voltage and less parasitic capacitance, and display device using the same

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US8673661B2 (en) 2014-03-18
US20120241744A1 (en) 2012-09-27

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