JP2012199578A - Iii−v族発光デバイスを成長させるための基板 - Google Patents
Iii−v族発光デバイスを成長させるための基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 186
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 59
- 230000006911 nucleation Effects 0.000 claims description 32
- 238000010899 nucleation Methods 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 29
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 239000007943 implant Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 8
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000002131 composite material Substances 0.000 description 41
- 235000012431 wafers Nutrition 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 22
- 229910010271 silicon carbide Inorganic materials 0.000 description 22
- 229910052594 sapphire Inorganic materials 0.000 description 16
- 239000010980 sapphire Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 239000013078 crystal Substances 0.000 description 8
- 229910003465 moissanite Inorganic materials 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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Abstract
【解決手段】ホストおよび該ホストに接合されたシード層を含む基板が準備され、次いで、n型領域およびp型領域の間に配置された発光層を含む半導体構造が、前記シード層上に成長される。幾つかの実施形態では、接合層が、前記ホストを前記シード層に結合させる。シード層は、前記シード層に形成される転位によって、または前記シード層と前記接合層の間、即ちこれら二つの層間の界面での滑りによって半導体構造における歪みが解除されるように、前記半導体構造における歪みの緩和のための臨界圧力よりも薄くすることができる。幾つかの実施形態において、前記ホストは、前記接合層をエッチング除去することにより前記半導体構造およびシード層から分離されてよい。
【選択図】図1
Description
[態様1]ホストと該ホストに接合されたシード層とを含む基板を準備することと、
前記基板上に、n型領域およびp型領域の間に配置された発光層を具備する半導体構造を成長させることと、
を含んでなる方法であって、
前記シード層は、前記半導体構造が歪み緩和を受ける厚さよりも薄い厚さを有する方法。
[態様2]態様1に記載の方法であって、前記基板が更に、前記ホストと前記シード層との間に配置された接合層を含んでなる方法。
[態様3]態様2に記載の方法であって、前記接合層が、シリコン酸化物およびシリコン窒化物のうちの一つを含んでなる方法。
[態様4]態様2に記載の方法であって、前記ホストの熱膨張係数が、前記半導体構造の層の熱膨張係数の少なくとも90%である方法。
[態様5]態様1に記載の方法であって、前記シード層が単結晶材料である方法。
[態様6]態様1に記載の方法であって、前記シード層は、Al2O3およびSiCのうちの一つを含んでなる方法。
[態様7]態様1に記載の方法であって、前記ホストは、Al2O3およびアルミナのうちの一つを含んでなる方法。
[態様8]態様1に記載の方法であって、前記半導体構造を成長させた後の前記シード層における平均転位密度が、前記半導体構造における平均転位密度よりも大きい方法。
[態様9]態様1に記載の方法であって、前記シード層は、前記シード層が除去されまたは形成されない領域によって分離された別々の部分に分割される方法。
[態様10]態様1に記載の方法であって、前記シード層が50〜300Åの厚さを有する方法。
[態様11]態様1に記載の方法であって、前記ホストは第一のホストであり、前記方法は更に、前記半導体構造を第二のホストに結合することと、
前記第一のホストを除去することと、
を含んでなる方法。
[態様12]態様11に記載の方法であって、前記第一のホストを除去することは、前記シード層と前記第一のホストの間に配置された接合層をエッチングすること、および、前記第一のホストを研削することのうちの一つを具備する方法。
[態様13]態様11に記載の方法であって、更に、前記シード層を除去することを含んでなる方法。
[態様14]態様1に記載の方法であって、前記発光層はIII族−窒化物層である方法。
[態様15]態様1に記載の方法であって、前記シード層と同じ組成を有する前記緩和された自立層が、前記半導体構造の少なくとも一部とは異なる格子定数を有する方法。
[態様16]態様1に記載の方法であって、前記ホストの熱膨張係数は、前記半導体構造における層の熱膨張係数の少なくとも90%である方法。
[態様17]ホストと該ホストに接合されたシード層とを含む基板を準備することと、
前記シード層の上に、n型領域およびp型領域の間に配置された発光層と、前記シード層上に直接成長された核形成層とを具備する半導体構造を成長させることと、
を含んでなる方法であって、
前記シード層の格子定数と前記核形成層の格子定数との間の差が1%未満である方法。
[態様18]態様17に記載の方法であって、前記シード層はSiCであり、前記核形成層はAlNである方法。
[態様19]態様17に記載の方法であって、前記シード層はZnOであり、前記核形成層はInGaNである方法。
[態様20]態様17に記載の方法であって、前記基板が、更に、前記ホストと前記シード層の間に配置された接合層を具備してなる方法。
[態様21]態様20に記載の方法であって、前記接合層は、シリコン酸化物およびシリコン窒化物のうちの一つを含んでなる方法。
[態様22]態様17に記載の方法であって、前記ホストの熱膨張係数が、前記半導体構造における層の熱膨張係数の少なくとも90%である方法。
[態様23]態様17に記載の方法であって、更に、前記シード層に形成された複数の溝を含んでなる方法。
[態様24]ホストと該ホストに接合されたシード層を含む基板を準備することと、
前記シード層の上に、n型領域およびp型領域の間に配置された発光層と、前記シード層上に直接成長された核形成層とを具備する半導体構造を成長させることと、
を含んでなる方法であって、
前記ホストの熱膨張係数は、前記半導体構造における少なくとも一つの層の熱膨張係数の少なくとも90%である方法。
[態様25]態様24に記載の方法であって、前記基板が更に、前記ホストと前記シード層との間に配置された接合層を含んでなる方法。
[態様26]態様24に記載の方法であって、前記シード層が、SiC、GaN、InGaN、AlGaN、およびAlNのうちの一つである方法。
Claims (16)
- ホストと、該ホストに接合されたシード層と、該シード層に形成された複数の溝と、を含む基板を準備することと、
前記シード層の上に、n型領域およびp型領域の間に配置された発光層と、前記シード層上に直接成長された核形成層とを具備する半導体構造を成長させることと
を含んでなる方法。 - 請求項1に記載の方法であって、前記複数の溝が1ミクロン〜50ミクロンだけ離間している方法。
- 請求項1に記載の方法であって、前記複数の溝が50ミクロン〜2ミリメータだけ離間している方法。
- 請求項1に記載の方法であって、前記基板が更に、前記ホストと前記シード層の間に配置された接合層を具備してなる方法。
- 請求項4に記載の方法であって、前記溝が、前記シード層を通って前記接合層まで延びている方法。
- 請求項1に記載の方法であって、前記溝が、前記シード層を通って前記ホストまで延びている方法。
- 請求項1に記載の方法であって、前記シード層と同じ組成を有する緩和された自立層の格子定数と、前記核形成層の格子定数との間の差が1%未満である方法。
- 請求項1に記載の方法であって、前記シード層の熱膨張係数と前記ホストの熱膨張係数との間の差が、前記核形成層の成長温度での前記シード層の格子定数を増大させて、成長温度において、前記シード層の格子定数と前記核形成層の格子定数との間の差が1%未満であるようにする方法。
- 請求項8に記載の方法であって、前記シード層がSiCであり、前記核形成層がAlNであり、前記ホストは少なくとも10×10-6℃-1の熱膨張係数を有する方法。
- ホストと該ホストに接合されたIII族−窒化物シード層を含む基板を準備することと、
前記シード層の上に、n型領域およびp型領域の間に配置された発光層と、前記シード層上に直接成長された核形成層とを具備する半導体構造を成長させることと
を含んでなる方法であって、
前記シード層は、前記半導体構造が前記シード層のガリウム面上に成長するように配向される方法。 - 請求項10に記載の方法であって、前記基板が前記シード層と前記ホストの間に配置された接合層を含んでなる方法。
- 請求項10に記載の方法であって、更に、前記シード層および前記半導体構造から前記ホストを除去することを含んでなる方法。
- 請求項12に記載の方法であって、更に、前記ホストを除去した後に前記シード層を除去することを含んでなる方法。
- 請求項10に記載の方法であって、前記基板を提供することが、
前記III族−窒化物シード層を前記成長基板上に成長させ、ここで前記III族−窒化物層が歪みを受けることと、
前記III族−窒化物シード層が少なくとも部分的に緩和されるように、前記成長基板から前記III族−窒化物シード層を遊離させること、
を含んでなる方法。 - 請求項10に記載の方法であって、前記ホストが第一のホストであり、また前記基板を準備することが、
成長基板上に前記III族−窒化物シード層を成長させることと、
前記III族−窒化物シード層を第一のホストに結合させることと、
前記成長基板を除去することと、
を含んでなる方法。 - 請求項15に記載の方法であって、前記基板を準備することが、更に、
前記III族−窒化物シード層の中にインプラント材料をインプラントすることと、 前記III族−窒化物シード層を第二のホストに接合することと、
前記III族−窒化物シード層を加熱して、前記インプラント材料が前記III族−窒化物シード層を分離するようにすること、
を含んでなる方法。
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EP1932186A1 (en) | 2008-06-18 |
WO2007036865A1 (en) | 2007-04-05 |
US8334155B2 (en) | 2012-12-18 |
JP5441298B2 (ja) | 2014-03-12 |
CN101273472A (zh) | 2008-09-24 |
US20070072324A1 (en) | 2007-03-29 |
EP1932186B1 (en) | 2017-08-02 |
JP5734239B2 (ja) | 2015-06-17 |
US8288186B2 (en) | 2012-10-16 |
TWI396263B (zh) | 2013-05-11 |
TW201320252A (zh) | 2013-05-16 |
JP2007096331A (ja) | 2007-04-12 |
TWI538110B (zh) | 2016-06-11 |
CN101273472B (zh) | 2011-04-20 |
US20110027975A1 (en) | 2011-02-03 |
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