JP2012160718A5 - Semiconductor device - Google Patents

Claims (8)

A drive circuit;
A wiring layer above the drive circuit;
A memory cell above the wiring layer,
The wiring layer has a first wiring,
The drive circuit is electrically connected to the memory cell through the first wiring,
The memory cell includes a transistor, an insulating layer above the gate electrode of the transistor, and a capacitor above the insulating layer,
The transistor includes a channel formation region in an oxide semiconductor layer;
One of the source and the drain of the transistor is electrically connected to the first electrode of the capacitor. A drive circuit;
A wiring layer above the drive circuit;
A memory cell above the wiring layer,
The wiring layer has a first wiring,
The drive circuit is electrically connected to the memory cell through the first wiring,
The memory cell includes a transistor and a capacitor,
The transistor includes a channel formation region in an oxide semiconductor layer;
One of the source and the drain of the transistor is electrically connected to the first electrode of the capacitor. In claim 1 or claim 2,
2. The semiconductor device according to claim 1, wherein the capacitor is provided in the groove. In claim 1 or claim 2,
The semiconductor device according to claim 1, wherein the first electrode of the capacitor includes a region facing a lower surface of the second electrode of the capacitor and a region facing a side surface of the second electrode of the capacitor. In claim 1 or claim 2,
The semiconductor device according to claim 1, wherein the dielectric of the capacitor has a concave shape. In any one of Claims 1 thru | or 5,
The semiconductor device, wherein the oxide semiconductor layer is highly purified. In any one of Claims 1 thru | or 6,
The semiconductor device is characterized in that the oxide semiconductor layer is i-type or substantially i-type. In any one of Claims 1 thru | or 7,
The semiconductor device is characterized in that the driver circuit is formed on a substrate containing a single crystal semiconductor material.