JP2012124492A5 - - Google Patents
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- Publication number
- JP2012124492A5 JP2012124492A5 JP2011268617A JP2011268617A JP2012124492A5 JP 2012124492 A5 JP2012124492 A5 JP 2012124492A5 JP 2011268617 A JP2011268617 A JP 2011268617A JP 2011268617 A JP2011268617 A JP 2011268617A JP 2012124492 A5 JP2012124492 A5 JP 2012124492A5
- Authority
- JP
- Japan
- Prior art keywords
- bis
- precursor
- vinylsilane
- tris
- allylsilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/964,266 US8460753B2 (en) | 2010-12-09 | 2010-12-09 | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes |
| US12/964,266 | 2010-12-09 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012124492A JP2012124492A (ja) | 2012-06-28 |
| JP2012124492A5 true JP2012124492A5 (ru) | 2013-05-30 |
| JP5357240B2 JP5357240B2 (ja) | 2013-12-04 |
Family
ID=45440145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011268617A Expired - Fee Related JP5357240B2 (ja) | 2010-12-09 | 2011-12-08 | ＣＶＤ及びＡＬＤのＳｉＯ２膜のためのアミノビニルシラン |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8460753B2 (ru) |
| EP (1) | EP2463404B1 (ru) |
| JP (1) | JP5357240B2 (ru) |
| KR (1) | KR101404576B1 (ru) |
| CN (2) | CN105239055A (ru) |
| TW (1) | TWI444499B (ru) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9188989B1 (en) | 2011-08-20 | 2015-11-17 | Daniel T. Mudd | Flow node to deliver process gas using a remote pressure measurement device |
| US9690301B2 (en) | 2012-09-10 | 2017-06-27 | Reno Technologies, Inc. | Pressure based mass flow controller |
| US9448564B2 (en) | 2013-02-15 | 2016-09-20 | Reno Technologies, Inc. | Gas delivery system for outputting fast square waves of process gas during semiconductor processing |
| US9958302B2 (en) | 2011-08-20 | 2018-05-01 | Reno Technologies, Inc. | Flow control system, method, and apparatus |
| DE102012203212A1 (de) * | 2012-03-01 | 2013-09-05 | Osram Opto Semiconductors Gmbh | Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses |
| US9460912B2 (en) | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
| KR101993355B1 (ko) | 2013-03-13 | 2019-09-30 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| KR102195139B1 (ko) * | 2014-02-20 | 2020-12-24 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| US9875888B2 (en) | 2014-10-03 | 2018-01-23 | Applied Materials, Inc. | High temperature silicon oxide atomic layer deposition technology |
| CN113373428B (zh) * | 2014-10-24 | 2023-07-14 | 弗萨姆材料美国有限责任公司 | 组合物和使用所述组合物沉积含硅膜的方法 |
| US10421766B2 (en) * | 2015-02-13 | 2019-09-24 | Versum Materials Us, Llc | Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films |
| CN114016001A (zh) * | 2015-12-21 | 2022-02-08 | 弗萨姆材料美国有限责任公司 | 用于沉积含硅膜的组合物及使用其的方法 |
| KR102255727B1 (ko) * | 2016-02-26 | 2021-05-26 | 버슘머트리얼즈 유에스, 엘엘씨 | 규소 함유 막의 증착을 위한 조성물, 및 이를 이용한 방법 |
| US10303189B2 (en) | 2016-06-30 | 2019-05-28 | Reno Technologies, Inc. | Flow control system, method, and apparatus |
| US10838437B2 (en) | 2018-02-22 | 2020-11-17 | Ichor Systems, Inc. | Apparatus for splitting flow of process gas and method of operating same |
| US10679880B2 (en) | 2016-09-27 | 2020-06-09 | Ichor Systems, Inc. | Method of achieving improved transient response in apparatus for controlling flow and system for accomplishing same |
| US11144075B2 (en) | 2016-06-30 | 2021-10-12 | Ichor Systems, Inc. | Flow control system, method, and apparatus |
| US10663337B2 (en) | 2016-12-30 | 2020-05-26 | Ichor Systems, Inc. | Apparatus for controlling flow and method of calibrating same |
| US11177127B2 (en) * | 2017-05-24 | 2021-11-16 | Versum Materials Us, Llc | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films |
| US20210363639A1 (en) * | 2018-10-04 | 2021-11-25 | Versum Materials Us, Llc | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films |
| CN112777565B (zh) * | 2019-11-05 | 2022-11-22 | 中国科学院大连化学物理研究所 | 一种可抑制逆反应的半导体光催化分解水的方法 |
| KR20230046303A (ko) * | 2020-07-24 | 2023-04-05 | 버슘머트리얼즈 유에스, 엘엘씨 | 조성물 및 게르마늄 시드층을 위한 이의 사용 방법 |
| KR20230150309A (ko) | 2021-03-03 | 2023-10-30 | 아이커 시스템즈, 인크. | 매니폴드 조립체를 포함하는 유체 유동 제어 시스템 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1352951A (en) * | 1971-12-08 | 1974-05-15 | Shell Int Research | Electrostatic coating of glass-fibre material |
| US4863755A (en) * | 1987-10-16 | 1989-09-05 | The Regents Of The University Of California | Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors |
| JP3093070B2 (ja) * | 1993-01-26 | 2000-10-03 | 大阪瓦斯株式会社 | Ｃｖｄ薄膜形成装置 |
| US5976991A (en) * | 1998-06-11 | 1999-11-02 | Air Products And Chemicals, Inc. | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane |
| JP4722269B2 (ja) * | 2000-08-29 | 2011-07-13 | Ａｚエレクトロニックマテリアルズ株式会社 | 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法 |
| US6391803B1 (en) * | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
| US20080268177A1 (en) | 2002-05-17 | 2008-10-30 | Air Products And Chemicals, Inc. | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants |
| KR100505668B1 (ko) * | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 |
| US6838125B2 (en) * | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
| US20040197474A1 (en) | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
| JP3666751B2 (ja) | 2003-11-28 | 2005-06-29 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜形成システム |
| JP2006261434A (ja) * | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
| US7312129B2 (en) * | 2006-01-25 | 2007-12-25 | Freescale Semiconductor, Inc. | Method for producing two gates controlling the same channel |
| JP5177617B2 (ja) * | 2006-12-25 | 2013-04-03 | 独立行政法人産業技術総合研究所 | 酸化シリコン薄膜形成装置 |
| US7500397B2 (en) * | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
| KR101593352B1 (ko) | 2007-06-28 | 2016-02-15 | 인티그리스, 인코포레이티드 | 이산화규소 간극 충전용 전구체 |
| US8580993B2 (en) * | 2008-11-12 | 2013-11-12 | Air Products And Chemicals, Inc. | Amino vinylsilane precursors for stressed SiN films |
| US8703624B2 (en) * | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
| US8889235B2 (en) | 2009-05-13 | 2014-11-18 | Air Products And Chemicals, Inc. | Dielectric barrier deposition using nitrogen containing precursor |
| US8242029B2 (en) * | 2009-11-23 | 2012-08-14 | Asm International N.V. | Method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate |
-
2010
- 2010-12-09 US US12/964,266 patent/US8460753B2/en active Active
-
2011
- 2011-12-05 TW TW100144719A patent/TWI444499B/zh not_active IP Right Cessation
- 2011-12-08 KR KR1020110131008A patent/KR101404576B1/ko active IP Right Grant
- 2011-12-08 JP JP2011268617A patent/JP5357240B2/ja not_active Expired - Fee Related
- 2011-12-09 CN CN201510580613.1A patent/CN105239055A/zh active Pending
- 2011-12-09 CN CN2011104239643A patent/CN102534548A/zh active Pending
- 2011-12-09 EP EP11192787.7A patent/EP2463404B1/en not_active Not-in-force
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