JP2012049366A - 発光素子 - Google Patents
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Abstract
【解決手段】第1導電型の第1半導体層23と、発光層25と、第1導電型とは異なる第2導電型の第2半導体層27とが積層され、第2半導体層27及び発光層25の一部が除去されて第1半導体層23が露出した窒化物半導体からなる半導体積層構造と、を備える発光素子1において、第1半導体層23の露出部分に形成された凹部41bと、凹部41b上に形成され、第1半導体層23にオーミック接触する第1電極40と、第2半導体層27にオーミック接触し、平面視にて第1電極40を包囲する第2電極30と、を備える。
【選択図】図1A
Description
図1Aは、本発明の第1の実施の形態に係る発光素子の縦断面の概要を示し、図1Bは、本発明の第1の実施の形態に係る発光素子の上面の概要を示す。なお、図1Aは、図1BのA−A線における縦断面の概要を示している。
pコンタクト電極30及びp側コンタクト層28上にマスク201を形成した後、マスク201が形成されていない部分をエッチングし、p側コンタクト層28からサファイア基板10側に向かって延びる逆円錐状の凹部410を形成し、その後マスク201を除去する(図2B(a))。
まず、真空蒸着法及びフォトリソグラフィー技術を用いて、n電極40をn側コンタクト層22の凹部41bの全面と、平坦部41aの一部の領域に形成する。さらに、真空蒸着法及びフォトリソグラフィー技術を用いて、p電極42をp側コンタクト層28上に設けられたpコンタクト電極30の表面の一部の領域に形成する(図2B(a))。n電極40を構成する材料と、p電極42を構成する材料は、互いに異なっていても、同一であってもよい。両者の材料が同一である場合、n電極40とp電極42を同時に形成できる。なお、n電極40とp電極42を形成した後、n側コンタクト層22とn電極40との間、並びにpコンタクト電極30とp電極との間のオーミック接触と密着性とを確保すべく、所定の温度、所定の雰囲気下で、所定の時間の熱処理を施すこともできる。
図3Aは、本発明の第2の実施の形態に係る発光素子の上面の概要を示し、図3B及び図3Cは、本発明の第2の実施の形態に係る発光素子の縦断面の概要を示す。具体的に図3Bは、図3AのA−A線における発光素子の縦断面の概要を示し、図3Cは、図3AのB−B線における発光素子の縦断面の概要を示す。
10 サファイア基板
20 バッファ層
22 n側コンタクト層
24 n側クラッド層
25 発光層
26 p側クラッド層
28 p側コンタクト層
30 pコンタクト電極
40 n電極
40a 平坦部
40b 傾斜部
41a 平坦部
41b 凹部
42 p電極
50 絶縁層
50a 第1の絶縁層
50b 第2の絶縁層
52 開口
60 反射層
70 接合電極
101 発光素子
110 サファイア基板
120 バッファ層
122 n側コンタクト層
124 n側クラッド層
125 発光層
126 p側クラッド層
128 p側コンタクト層
130 透明導電層
140 p電極
141a 平坦部
141b 凹部
142 n電極
150 絶縁層
150a ビア
150b ビア
160 反射層
170 p配線
170a 外周部
170b p側細線部
172 n配線
172a 辺部
172b n側細線部
180 絶縁層
180a 開口
180b 開口
190 p側接合電極
192 n側接合電極
200 マスク
202 マスク
204 マスク
700 第2平面導通部
702 第2上下導通部
720 第1平面導通部
722 第1上下導通部
Claims (3)
- 第1導電型の第1半導体層と、発光層と、前記第1導電型とは異なる第2導電型の第2半導体層とが積層され、前記第2半導体層及び前記発光層の一部が除去されて前記第1半導体層が露出した窒化物半導体からなる半導体積層構造と、
前記第1半導体層の露出部分に形成された凹部と、
前記凹部上に形成され、前記第1半導体層にオーミック接触する第1電極と、
前記第2半導体層にオーミック接触し、平面視にて前記第1電極を包囲するように形成された第2電極と、を備える発光素子。 - 前記凹部は、前記半導体積層構造の深さ方向に対して傾斜する傾斜面を有する請求項1に記載の発光素子。
- 前記第1電極は、平面視にて点状に形成され、複数設けられる請求項2に記載の発光素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010190778A JP5333382B2 (ja) | 2010-08-27 | 2010-08-27 | 発光素子 |
US13/067,588 US8546836B2 (en) | 2010-08-27 | 2011-06-10 | Light-emitting element |
CN201110251962.0A CN102386295B (zh) | 2010-08-27 | 2011-08-24 | 发光元件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010190778A JP5333382B2 (ja) | 2010-08-27 | 2010-08-27 | 発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012049366A true JP2012049366A (ja) | 2012-03-08 |
JP5333382B2 JP5333382B2 (ja) | 2013-11-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010190778A Active JP5333382B2 (ja) | 2010-08-27 | 2010-08-27 | 発光素子 |
Country Status (3)
Country | Link |
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US (1) | US8546836B2 (ja) |
JP (1) | JP5333382B2 (ja) |
CN (1) | CN102386295B (ja) |
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US8546836B2 (en) | 2013-10-01 |
CN102386295B (zh) | 2016-03-30 |
US20120049236A1 (en) | 2012-03-01 |
JP5333382B2 (ja) | 2013-11-06 |
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