JP2012038918A - 半導体発光素子 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 149
- 150000004767 nitrides Chemical class 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 36
- 229910002601 GaN Inorganic materials 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000005253 cladding Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000007257 malfunction Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
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- H01S5/00—Semiconductor lasers
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Abstract
【解決手段】実施の形態によれば、基板と、基板上のn型窒化物半導体層と、n型窒化物半導体層上の窒化物半導体の活性層と、活性層上のp型窒化物半導体層と、p型窒化物半導体層に形成されるリッジストライプと、リッジストライプの伸長方向に垂直な、n型窒化物半導体層、活性層およびp型窒化物半導体層の端面に形成され、活性層よりもバンドギャップの広い端面窒化物半導体層とを有し、端面窒化物半導体層の、少なくともp型窒化物半導体層の端面に形成される領域のMgの濃度が、5E16atoms/cm3以上5E17atoms/cm3以下である半導体発光素子である。
【選択図】図1
Description
本実施の形態の半導体発光素子は、基板と、基板上のGaN系のn型窒化物半導体層と、n型窒化物半導体層上のGaN系の活性層と、活性層上のGaN系のp型窒化物半導体層と、p型窒化物半導体層に形成されるリッジストライプとを備える。さらに、リッジストライプの伸長方向に垂直な、n型窒化物半導体層、活性層およびp型窒化物半導体層の端面に形成され、活性層よりもバンドギャップの広い、GaN系の端面窒化物半導体層を備える。そして、端面窒化物半導体層の、少なくともp型窒化物半導体層の端面に形成される領域のMgの濃度が、5E16atoms/cm3以上5E17atoms/cm3以下である。
本実施の形態の半導体発光素子は、端面窒化物半導体層が、GaN基板側から第1の低屈折率層、高屈折率層、第2の低屈折率層の積層構造を有し、端面窒化物半導体層の活性層の端面に形成される領域が高屈折率層であること以外は第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については記載を省略する。
本実施の形態の半導体発光素子は、リッジストライプ形状が端面窒化物半導体層形成の溝部と同時形成され、リッジストライプ側面も端面窒化物半導体層と同一材料で埋め込まれている点で、第1の実施の形態と異なっている。以下、第1の実施の形態と重複する内容については記載を省略する。
12 n型窒化物半導体層
14 活性層
16 p型窒化物半導体層
18 リッジストライプ
22 端面窒化物半導体層
22b 第1の低屈折率層
22c 高屈折率層
22d 第2の低屈折率層
Claims (5)
- 基板と、
前記基板上のn型窒化物半導体層と、
前記n型窒化物半導体層上の窒化物半導体の活性層と、
前記活性層上のp型窒化物半導体層と、
前記p型窒化物半導体層に形成されるリッジストライプと、
前記リッジストライプの伸長方向に垂直な、前記n型窒化物半導体層、前記活性層および前記p型窒化物半導体層の端面に形成され、前記活性層よりもバンドギャップの広い端面窒化物半導体層とを有し、
前記端面窒化物半導体層の、少なくとも前記p型窒化物半導体層の端面に形成される領域のMgの濃度が、5E16atoms/cm3以上5E17atoms/cm3以下であることを特徴とする半導体発光素子。 - 前記端面窒化物半導体層が、前記基板側から第1の低屈折率層、高屈折率層、第2の低屈折率層からなる積層構造を有し、
前記端面窒化物半導体層の前記活性層の端面に形成される領域が前記高屈折率層であることを特徴とする請求項1記載の半導体発光素子。 - 前記端面窒化物半導体層の前記リッジストライプの伸長方向の厚さが10μm以上であることを特徴とする請求項1または請求項2記載の半導体発光素子。
- 前記第1の低屈折率層および前記第2の低屈折率層のAlの濃度が、前記高屈折率層のAlの濃度よりも高いことを特徴とする請求項2記載の半導体発光素子。
- 前記活性層がInXGa1−XN(0<X<1)であり、前記第1および第2の低屈折率層がAlYGa1−YN(0<Y<1)であり、前記高屈折率層がGaNであることを特徴とする請求項4記載の半導体発光素子。
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JP2010177687A JP5319623B2 (ja) | 2010-08-06 | 2010-08-06 | 半導体発光素子 |
US13/034,329 US8526477B2 (en) | 2010-08-06 | 2011-02-24 | Semiconductor light emitting device |
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CN104247052B (zh) * | 2012-03-06 | 2017-05-03 | 天空公司 | 具有减少导光效果的低折射率材料层的发光二极管 |
JP6127596B2 (ja) * | 2013-03-12 | 2017-05-17 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
JP6736413B2 (ja) * | 2016-08-10 | 2020-08-05 | 日本ルメンタム株式会社 | 半導体光素子、光モジュール及び半導体光素子の製造方法 |
Citations (7)
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JP2000232254A (ja) * | 1999-02-10 | 2000-08-22 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザおよび半導体レーザの製造方法 |
JP2001111172A (ja) * | 1999-09-29 | 2001-04-20 | Xerox Corp | インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造 |
JP2003060298A (ja) * | 2001-08-08 | 2003-02-28 | Nichia Chem Ind Ltd | 半導体発光素子の製造方法と半導体発光素子 |
JP2005085852A (ja) * | 2003-09-05 | 2005-03-31 | Furukawa Electric Co Ltd:The | 半導体電子デバイス |
WO2005064661A1 (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Industrial Co., Ltd. | Iii族窒化物結晶の製造方法およびそれにより得られるiii族窒化物結晶ならびにそれを用いたiii族窒化物基板 |
US20080198886A1 (en) * | 2007-02-20 | 2008-08-21 | Nichia Corporation | Nitride semiconductor laser element |
JP2009170658A (ja) * | 2008-01-16 | 2009-07-30 | Panasonic Corp | 半導体レーザ装置の製造方法 |
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CN100550543C (zh) | 2002-06-26 | 2009-10-14 | 阿莫诺公司 | 氮化物半导体激光装置及其制造方法 |
JP4457549B2 (ja) | 2002-10-10 | 2010-04-28 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
JP2008186903A (ja) | 2007-01-29 | 2008-08-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000232254A (ja) * | 1999-02-10 | 2000-08-22 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザおよび半導体レーザの製造方法 |
JP2001111172A (ja) * | 1999-09-29 | 2001-04-20 | Xerox Corp | インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造 |
JP2003060298A (ja) * | 2001-08-08 | 2003-02-28 | Nichia Chem Ind Ltd | 半導体発光素子の製造方法と半導体発光素子 |
JP2005085852A (ja) * | 2003-09-05 | 2005-03-31 | Furukawa Electric Co Ltd:The | 半導体電子デバイス |
WO2005064661A1 (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Industrial Co., Ltd. | Iii族窒化物結晶の製造方法およびそれにより得られるiii族窒化物結晶ならびにそれを用いたiii族窒化物基板 |
US20080198886A1 (en) * | 2007-02-20 | 2008-08-21 | Nichia Corporation | Nitride semiconductor laser element |
JP2009170658A (ja) * | 2008-01-16 | 2009-07-30 | Panasonic Corp | 半導体レーザ装置の製造方法 |
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US20120032215A1 (en) | 2012-02-09 |
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