JP2012033217A - 光記録媒体 - Google Patents
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- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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- G—PHYSICS
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- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
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- G—PHYSICS
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- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
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- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】半透過記録層7,9を含む複数の記録層5,7,9を積層した相変化型の光記録媒体1に関する。この光記録媒体1は、支持基板3と、支持基板3側から第1誘電体層101/半透過半反射層102/第2誘電体層103/相変化型の記録材料層104/第3誘電体層105を順に積層してなる半透過記録層7,9とを有する。そして特に、半透過半反射層102が銀を用いて構成される。また、第2誘電体層103は、半透過半反射層102側の界面に配置される下層103aと、下層103aよりも記録材料層104側に配置される上層103bとを有する積層構造である。このうち下層103aは、酸化インジウムからなる層、または酸化インジウムと酸化スズとの複合酸化物からなる層として構成される。一方、上層103bは、酸化タンタル、酸化ガリウム、酸化ジルコニウム、または酸化ニオブからなる。
【選択図】図1
Description
支持基板3は、ポリカーボネート等のプラスチック、またはガラス等からなる。
反射記録層5は、相変化型の記録材料層と共に、記録再生に用いるレーザ光hを反射するための十分な厚みの反射層を備えている。このような反射記録層5は、支持基板3側から順に、少なくとも反射層/誘電体層/相変化型の記録材料層/誘電体層が順に積層されている。記録材料層は、相変化型の記録材料を用いたであれば良く、例えば次に説明する半透過記録層7,9を構成する記録材料と同様の材料の中から選択した材料を用いて構成される。
半透過記録層7,9は、本実施形態に特徴的な第2誘電体層103を有する層である。これらの半透過記録層7,9は、相変化型の記録材料層104と共に、記録再生に用いるレーザ光hを反射すると共に透過する半透過半反射層102を備えている。このような半透過記録層7,9は、図示した通り、支持基板3側から順に第1誘電体層101/半透過半反射層102/第2誘電体層103/記録材料層104/第3誘電体層105が積層されている。本実施形態においては、このような積層構造の半透過記録層7,9において、半透過半反射層102と記録材料層104との間に配置された第2誘電体層103の構成が特徴的である。以下、半透過記録層7,9の構成を下層側から順に説明する。
中間層11および透明保護膜13は、記録再生に用いるレーザ光に対しての光吸収が小さい材料を用いて構成され、例えば光硬化性樹脂や、光硬化性樹脂を接着剤としてガラス基板や樹脂基板を張り合わせて用いても良い。尚、光記録媒体1中に設けられる複数の中間層11および透明保護膜13は、同一構成であっても良く、それぞれが異なる構成であっても良い。
記録再生波長として波長405nmのレーザ光を用いる場合を想定し、第2誘電体層103を各構成として第1実施形態で説明した構成の半透過記録層7,9を形成した。半透過記録層7,9は、光硬化性樹脂からなる中間層11上に形成し、この上部を光硬化性樹脂からなる透明保護膜13で覆い、光記録媒体を作製した。
第1誘電体層101…Nb2O5(20nm)
半透過半反射層102…Ag合金(10nm)
第2誘電体層103…下記表1参照
記録材料層104…GeBiTe記録材料(6nm)
第3誘電体層105…SiN(10nm)/TiO2(屈折率約2.65:16nm)
尚、記録材料層104を構成するGeBiTe記録材料は、化合物系の記録材料であり、レーザ光の照射によって結晶と非晶質との間で相変化する。
実施例1で、欠陥増加率が小数点以下に抑えられている(1)〜(4)および(6)の第2誘電体103を有する光記録媒体について、RF信号を複数回記録(Direct OverWrite :DOW)した。図2には、RF信号品質を示すジッター値を記録回数(DOW回数)ごとにプロットしたグラフをDOW特性(RF信号の書き換え特性)として示す。ここで扱うジッター値とはRF信号が正確に記録された時の再生信号レベルに対する実際の信号レベルのずれ量の統計値であり数値が大きいほどRF信号品質が悪いことを示す。信号記録条件は、変調方式:1−7PP、channel bit rate:132Mbps、channel bit length:57.26nm、その他基本的な仕様はBlu−ray規格にならった。
本発明の比較例として、図3の(11)〜(14)の各材料を用いた単層構造の第2誘電体層103を半透過記録層7,9に設けた光記録媒体を作製した。第2誘電体層103以外の構成は実施例1と同様である。
第2誘電体層103を、ITOからなる下層103a/酸化タンタル(Ta2O5)からなる上層103bとの積層構造とし、ITO中の酸化スズ(SnO2)の組成0〜100mol%の範囲で調整した各半透過記録層7,9を有する光記録媒体を作製した。第2誘電体層103以外の構成は実施例1と同様である。作製した光記録媒体について、図4(a)〜図4(d)に示す各種評価を行った。尚、図4(a)〜図4(d)において、横軸のITO中の酸化スズ(SnO2)の組成0mol%は酸化インジウム(In2O3)であり、酸化スズ(SnO2)の組成100mol%は酸化スズ(SnO2)である。
第2誘電体層103を、ITOからなる下層103a/酸化ガリウム(Ga2O3)からなる上層103bとの積層構造とし、ITO中の酸化スズ(SnO2)の組成0〜100mol%の範囲で調整した各半透過記録層7,9を有する光記録媒体を作製した。第2誘電体層103以外の構成は実施例1と同様である。作製した光記録媒体について、図5(a)〜図5(b)に示すように、実施例4と同様の各種評価を行った。尚、図5(a)〜図5(d)において、横軸のITO中の酸化スズ(SnO2)の組成0mol%は酸化インジウム(In2O3)であり、酸化スズ(SnO2)の組成100mol%は酸化スズ(SnO2)である。
Claims (3)
- 支持基板と、当該支持基板側から第1誘電体層/半透過半反射層/第2誘電体層/相変化型の記録材料層/第3誘電体層を順に積層してなる半透過記録層とを有し、
前記半透過半反射層が銀を用いて構成され、
前記第2誘電体層は、前記半透過半反射層側の界面に配置される下層と、当該下層よりも前記記録材料層側に配置される上層とを有する積層構造であり、
前記下層は、酸化インジウムからなる層、または酸化インジウムと酸化スズとの複合酸化物からなる層として構成され、
前記上層は、酸化タンタル、酸化ガリウム、酸化ジルコニウム、または酸化ニオブからなる
光記録媒体。 - 前期第2誘電体層における前記下層は、酸化インジウムと50mol%以下の酸化スズとの複合酸化物からなる
請求項1に記載の光記録媒体。 - 前記相変化型の記録材料層は、ゲルマニウム、ビスマス、アンチモン、およびテルルのうちの少なくとも1つを用いて構成される
請求項1または2に記載の光記録媒体。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010170885A JP5569221B2 (ja) | 2010-07-29 | 2010-07-29 | 光記録媒体 |
EP11172437A EP2413318A1 (en) | 2010-07-29 | 2011-07-01 | Optical recording medium |
TW100124220A TWI442391B (zh) | 2010-07-29 | 2011-07-08 | 光學記錄媒體 |
US13/183,704 US8465822B2 (en) | 2010-07-29 | 2011-07-15 | Optical recording medium |
CN201110212432.5A CN102347039A (zh) | 2010-07-29 | 2011-07-22 | 光学记录介质 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010170885A JP5569221B2 (ja) | 2010-07-29 | 2010-07-29 | 光記録媒体 |
Publications (2)
Publication Number | Publication Date |
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JP2012033217A true JP2012033217A (ja) | 2012-02-16 |
JP5569221B2 JP5569221B2 (ja) | 2014-08-13 |
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EP (1) | EP2413318A1 (ja) |
JP (1) | JP5569221B2 (ja) |
CN (1) | CN102347039A (ja) |
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WO2017094227A1 (ja) * | 2015-12-01 | 2017-06-08 | ソニー株式会社 | 光記録媒体 |
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WO2020031498A1 (ja) | 2018-08-09 | 2020-02-13 | パナソニックIpマネジメント株式会社 | 情報記録媒体およびその製造方法 |
CN117908175A (zh) * | 2024-03-20 | 2024-04-19 | 四川虹基光玻新材料科技有限公司 | 一种半反射膜及其制备方法和应用 |
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JP2004259367A (ja) * | 2003-02-26 | 2004-09-16 | Ricoh Co Ltd | 相変化型記録媒体 |
JP2004273040A (ja) * | 2003-03-10 | 2004-09-30 | Ricoh Co Ltd | 相変化型記録媒体 |
JP2005510002A (ja) * | 2001-11-23 | 2005-04-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | マルチスタック光データ記憶媒体及びそのような媒体の使用 |
WO2007013276A1 (ja) * | 2005-07-29 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | 情報記録媒体およびその製造方法 |
JP2009157990A (ja) * | 2007-12-26 | 2009-07-16 | Panasonic Corp | 情報記録媒体、その製造方法、その記録方法、およびターゲット |
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JP4194064B2 (ja) * | 2001-03-15 | 2008-12-10 | 株式会社リコー | 相変化型光情報記録媒体 |
JP4542995B2 (ja) * | 2006-02-02 | 2010-09-15 | 株式会社東芝 | 相変化記録媒体 |
EP2055495A4 (en) | 2006-08-08 | 2010-11-03 | Panasonic Corp | INFORMATION RECORDING MEDIUM, METHOD FOR MANUFACTURING SAME, AND CATHODIC SPUTTERING TARGET |
JP2010170885A (ja) | 2009-01-23 | 2010-08-05 | Honda Motor Co Ltd | 車両用燃料電池システム |
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Patent Citations (5)
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JP2005510002A (ja) * | 2001-11-23 | 2005-04-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | マルチスタック光データ記憶媒体及びそのような媒体の使用 |
JP2004259367A (ja) * | 2003-02-26 | 2004-09-16 | Ricoh Co Ltd | 相変化型記録媒体 |
JP2004273040A (ja) * | 2003-03-10 | 2004-09-30 | Ricoh Co Ltd | 相変化型記録媒体 |
WO2007013276A1 (ja) * | 2005-07-29 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | 情報記録媒体およびその製造方法 |
JP2009157990A (ja) * | 2007-12-26 | 2009-07-16 | Panasonic Corp | 情報記録媒体、その製造方法、その記録方法、およびターゲット |
Cited By (3)
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WO2017094227A1 (ja) * | 2015-12-01 | 2017-06-08 | ソニー株式会社 | 光記録媒体 |
JPWO2017094227A1 (ja) * | 2015-12-01 | 2018-09-13 | ソニー株式会社 | 光記録媒体 |
US10373641B2 (en) | 2015-12-01 | 2019-08-06 | Sony Corporation | Optical recording medium |
Also Published As
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US8465822B2 (en) | 2013-06-18 |
TW201225077A (en) | 2012-06-16 |
US20120027980A1 (en) | 2012-02-02 |
EP2413318A1 (en) | 2012-02-01 |
TWI442391B (zh) | 2014-06-21 |
JP5569221B2 (ja) | 2014-08-13 |
CN102347039A (zh) | 2012-02-08 |
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