JP2012019147A5 - - Google Patents

Download PDF

Info

Publication number
JP2012019147A5
JP2012019147A5 JP2010156926A JP2010156926A JP2012019147A5 JP 2012019147 A5 JP2012019147 A5 JP 2012019147A5 JP 2010156926 A JP2010156926 A JP 2010156926A JP 2010156926 A JP2010156926 A JP 2010156926A JP 2012019147 A5 JP2012019147 A5 JP 2012019147A5
Authority
JP
Japan
Prior art keywords
solid
imaging device
state imaging
conductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010156926A
Other languages
English (en)
Japanese (ja)
Other versions
JP5451547B2 (ja
JP2012019147A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2010156926A external-priority patent/JP5451547B2/ja
Priority to JP2010156926A priority Critical patent/JP5451547B2/ja
Priority to EP20166179.0A priority patent/EP3706172B1/en
Priority to US13/808,877 priority patent/US9166090B2/en
Priority to RU2013105505/28A priority patent/RU2521224C1/ru
Priority to CN201610164142.0A priority patent/CN105720067B9/zh
Priority to EP11803305.9A priority patent/EP2591505A4/en
Priority to PCT/JP2011/003796 priority patent/WO2012004965A1/en
Priority to EP24183950.5A priority patent/EP4428912A3/en
Priority to CN201180033415.3A priority patent/CN102971851B/zh
Publication of JP2012019147A publication Critical patent/JP2012019147A/ja
Publication of JP2012019147A5 publication Critical patent/JP2012019147A5/ja
Application granted granted Critical
Publication of JP5451547B2 publication Critical patent/JP5451547B2/ja
Priority to US14/856,354 priority patent/US9419030B2/en
Priority to US15/209,605 priority patent/US9640581B2/en
Priority to US15/456,386 priority patent/US9929202B2/en
Priority to US15/894,258 priority patent/US10217786B2/en
Priority to US16/242,835 priority patent/US10573680B2/en
Priority to US16/777,586 priority patent/US11177310B2/en
Priority to US17/505,039 priority patent/US20220037390A1/en
Priority to US18/322,239 priority patent/US12068351B2/en
Priority to US18/786,342 priority patent/US20240387592A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010156926A 2010-07-09 2010-07-09 固体撮像装置 Active JP5451547B2 (ja)

Priority Applications (18)

Application Number Priority Date Filing Date Title
JP2010156926A JP5451547B2 (ja) 2010-07-09 2010-07-09 固体撮像装置
CN201180033415.3A CN102971851B (zh) 2010-07-09 2011-07-04 固态图像拾取设备
EP20166179.0A EP3706172B1 (en) 2010-07-09 2011-07-04 Solid-state image pickup device
US13/808,877 US9166090B2 (en) 2010-07-09 2011-07-04 Solid-state image pickup device
RU2013105505/28A RU2521224C1 (ru) 2010-07-09 2011-07-04 Твердотельное устройство захвата изображения
CN201610164142.0A CN105720067B9 (zh) 2010-07-09 2011-07-04 固态图像拾取设备
EP11803305.9A EP2591505A4 (en) 2010-07-09 2011-07-04 SOLID STATE IMAGE CRADLE
PCT/JP2011/003796 WO2012004965A1 (en) 2010-07-09 2011-07-04 Solid-state image pickup device
EP24183950.5A EP4428912A3 (en) 2010-07-09 2011-07-04 Solid-state image pickup device
US14/856,354 US9419030B2 (en) 2010-07-09 2015-09-16 Solid-state image pickup device
US15/209,605 US9640581B2 (en) 2010-07-09 2016-07-13 Solid-state image pickup device
US15/456,386 US9929202B2 (en) 2010-07-09 2017-03-10 Solid-state image pickup device
US15/894,258 US10217786B2 (en) 2010-07-09 2018-02-12 Solid-state image pickup device
US16/242,835 US10573680B2 (en) 2010-07-09 2019-01-08 Solid-state image pickup device
US16/777,586 US11177310B2 (en) 2010-07-09 2020-01-30 Solid-state image pickup device
US17/505,039 US20220037390A1 (en) 2010-07-09 2021-10-19 Solid-state image pickup device
US18/322,239 US12068351B2 (en) 2010-07-09 2023-05-23 Solid-state image pickup device
US18/786,342 US20240387592A1 (en) 2010-07-09 2024-07-26 Solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010156926A JP5451547B2 (ja) 2010-07-09 2010-07-09 固体撮像装置

Publications (3)

Publication Number Publication Date
JP2012019147A JP2012019147A (ja) 2012-01-26
JP2012019147A5 true JP2012019147A5 (enExample) 2013-08-22
JP5451547B2 JP5451547B2 (ja) 2014-03-26

Family

ID=45440958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010156926A Active JP5451547B2 (ja) 2010-07-09 2010-07-09 固体撮像装置

Country Status (6)

Country Link
US (10) US9166090B2 (enExample)
EP (3) EP2591505A4 (enExample)
JP (1) JP5451547B2 (enExample)
CN (2) CN105720067B9 (enExample)
RU (1) RU2521224C1 (enExample)
WO (1) WO2012004965A1 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101411800B1 (ko) 2009-12-26 2014-06-24 캐논 가부시끼가이샤 고체 촬상 장치 및 촬상 시스템
JP5517800B2 (ja) * 2010-07-09 2014-06-11 キヤノン株式会社 固体撮像装置用の部材および固体撮像装置の製造方法
JP5451547B2 (ja) * 2010-07-09 2014-03-26 キヤノン株式会社 固体撮像装置
TWI495041B (zh) * 2011-07-05 2015-08-01 新力股份有限公司 半導體裝置、用於半導體裝置之製造方法及電子設備
US8896125B2 (en) 2011-07-05 2014-11-25 Sony Corporation Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
JP5994274B2 (ja) * 2012-02-14 2016-09-21 ソニー株式会社 半導体装置、半導体装置の製造方法、及び、電子機器
US10090349B2 (en) 2012-08-09 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US9153565B2 (en) 2012-06-01 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors with a high fill-factor
KR101240537B1 (ko) * 2012-05-07 2013-03-11 (주)실리콘화일 이종접합 구조의 칩 적층 이미지센서 및 그 제조방법
JP6012262B2 (ja) 2012-05-31 2016-10-25 キヤノン株式会社 半導体装置の製造方法
US8796805B2 (en) * 2012-09-05 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple metal film stack in BSI chips
US8866250B2 (en) * 2012-09-05 2014-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple metal film stack in BSI chips
TWI595637B (zh) * 2012-09-28 2017-08-11 新力股份有限公司 半導體裝置及電子機器
JP6128787B2 (ja) * 2012-09-28 2017-05-17 キヤノン株式会社 半導体装置
JP6017297B2 (ja) * 2012-12-14 2016-10-26 オリンパス株式会社 半導体装置の製造方法
KR102136845B1 (ko) 2013-09-16 2020-07-23 삼성전자 주식회사 적층형 이미지 센서 및 그 제조방법
WO2015040798A1 (ja) * 2013-09-20 2015-03-26 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
TWI676279B (zh) * 2013-10-04 2019-11-01 新力股份有限公司 半導體裝置及固體攝像元件
CN104810366B (zh) * 2014-01-26 2018-09-11 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
CN104241201B (zh) * 2014-08-28 2017-05-31 武汉新芯集成电路制造有限公司 一种集成功率器件与控制器件的方法
CN104241200B (zh) * 2014-08-28 2017-03-08 武汉新芯集成电路制造有限公司 一种功率器件与控制器件的集成方法
WO2016046606A1 (en) * 2014-09-26 2016-03-31 Nokia Technologies Oy Methods and apparatus for minimization of drive testing
CN104599988B (zh) * 2015-01-05 2017-08-04 武汉新芯集成电路制造有限公司 集成功率器件与控制器件的方法
US10354975B2 (en) * 2016-05-16 2019-07-16 Raytheon Company Barrier layer for interconnects in 3D integrated device
US10431614B2 (en) 2017-02-01 2019-10-01 Semiconductor Components Industries, Llc Edge seals for semiconductor packages
US11411036B2 (en) * 2017-04-04 2022-08-09 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
JP2018195656A (ja) * 2017-05-16 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 半導体装置の製造方法及び半導体装置
US20200144322A1 (en) * 2017-07-18 2020-05-07 Sony Semiconductor Solutions Corporation Imaging apparatus and method of manufacturing imaging apparatus
FR3069371B1 (fr) * 2017-07-19 2019-08-30 Stmicroelectronics (Crolles 2) Sas Dispositif electronique capteur d'images
US10727217B2 (en) 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device that uses bonding layer to join semiconductor substrates together
US10879115B2 (en) * 2017-11-21 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and forming method thereof
KR102491881B1 (ko) * 2018-01-16 2023-01-27 삼성디스플레이 주식회사 디스플레이 장치
KR20240031429A (ko) * 2018-02-01 2024-03-07 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 그 제조 방법, 및 전자 기기
JP2019140178A (ja) * 2018-02-07 2019-08-22 東芝メモリ株式会社 半導体装置
JP7353729B2 (ja) * 2018-02-09 2023-10-02 キヤノン株式会社 半導体装置、半導体装置の製造方法
JP6952629B2 (ja) * 2018-03-20 2021-10-20 株式会社東芝 半導体装置
JP2020043298A (ja) * 2018-09-13 2020-03-19 キヤノン株式会社 半導体装置、その製造方法および電子機器
KR102524998B1 (ko) * 2018-09-13 2023-04-24 주식회사 디비하이텍 후면 조사형 이미지 센서 및 그 제조 방법
CN112106176A (zh) * 2018-12-04 2020-12-18 索尼半导体解决方案公司 半导体装置和电子设备
JP7551277B2 (ja) * 2019-01-31 2024-09-17 キヤノン株式会社 半導体装置、機器
US10840185B2 (en) * 2019-03-05 2020-11-17 Texas Instruments Incorporated Semiconductor device with vias having a zinc-second metal-copper composite layer
JP7321724B2 (ja) * 2019-03-05 2023-08-07 キヤノン株式会社 半導体装置および機器
JP7297516B2 (ja) * 2019-04-25 2023-06-26 キヤノン株式会社 半導体装置および機器
JP7679169B2 (ja) * 2019-08-08 2025-05-19 キヤノン株式会社 光電変換装置、光電変換システム
US11302736B2 (en) * 2019-08-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP2021034560A (ja) * 2019-08-23 2021-03-01 キオクシア株式会社 半導体装置およびその製造方法
KR102780353B1 (ko) 2019-08-26 2025-03-12 삼성전자주식회사 반도체 장치 및 그 제조방법
JP7417393B2 (ja) * 2019-09-27 2024-01-18 キヤノン株式会社 半導体装置及び半導体ウエハ
JP7353121B2 (ja) 2019-10-08 2023-09-29 キヤノン株式会社 半導体装置および機器
JP7603382B2 (ja) * 2019-11-18 2024-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
JP7618392B2 (ja) 2020-05-14 2025-01-21 キヤノン株式会社 光電変換装置、撮像システム、移動体
JP2022018705A (ja) 2020-07-16 2022-01-27 キヤノン株式会社 半導体装置
KR102823325B1 (ko) * 2020-07-20 2025-06-23 에스케이하이닉스 주식회사 보호 소자를 갖는 이미지 센싱 장치
WO2025240564A1 (en) * 2024-05-17 2025-11-20 Micron Technology, Inc. Self-aligned patterning on package substrate

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168965B1 (en) * 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
US6455425B1 (en) * 2000-01-18 2002-09-24 Advanced Micro Devices, Inc. Selective deposition process for passivating top interface of damascene-type Cu interconnect lines
US6642081B1 (en) * 2002-04-11 2003-11-04 Robert Patti Interlocking conductor method for bonding wafers to produce stacked integrated circuits
JP4432502B2 (ja) * 2004-01-20 2010-03-17 ソニー株式会社 半導体装置
DE202004005607U1 (de) 2004-04-06 2004-06-09 Ulamo Holding B.V. Befestigungsvorrichtung für eine Frontplatte
KR100610481B1 (ko) 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 수광영역을 넓힌 이미지센서 및 그 제조 방법
KR100782463B1 (ko) 2005-04-13 2007-12-05 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
JP4533367B2 (ja) * 2005-11-18 2010-09-01 キヤノン株式会社 固体撮像装置
JP5162869B2 (ja) * 2006-09-20 2013-03-13 富士通セミコンダクター株式会社 半導体装置およびその製造方法
JP2008277511A (ja) * 2007-04-27 2008-11-13 Fujifilm Corp 撮像素子及び撮像装置
US7960768B2 (en) * 2008-01-17 2011-06-14 Aptina Imaging Corporation 3D backside illuminated image sensor with multiplexed pixel structure
JP2010067844A (ja) * 2008-09-11 2010-03-25 Omron Corp 固体撮像素子の製造方法
JP2010156926A (ja) 2009-01-05 2010-07-15 Sharp Corp 表示装置、及びテレビ受信装置
JP5187284B2 (ja) * 2009-06-26 2013-04-24 ソニー株式会社 半導体装置の製造方法
KR101411800B1 (ko) * 2009-12-26 2014-06-24 캐논 가부시끼가이샤 고체 촬상 장치 및 촬상 시스템
JP5451547B2 (ja) * 2010-07-09 2014-03-26 キヤノン株式会社 固体撮像装置
CN106449676A (zh) * 2011-07-19 2017-02-22 索尼公司 半导体装置和电子设备
TWI577001B (zh) * 2011-10-04 2017-04-01 Sony Corp 固體攝像裝置、固體攝像裝置之製造方法及電子機器
JP2014203961A (ja) * 2013-04-04 2014-10-27 ソニー株式会社 固体撮像装置およびその製造方法、ならびに電子機器
JP2022018705A (ja) * 2020-07-16 2022-01-27 キヤノン株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JP2012019147A5 (enExample)
JP2012019148A5 (enExample)
JP2011138841A5 (enExample)
US7566944B2 (en) Package structure for optoelectronic device and fabrication method thereof
KR101875221B1 (ko) 반도체 집적 회로, 전자 기기, 고체 촬상 장치, 촬상 장치
EP4372821A3 (en) Imaging element
TWI509783B (zh) 半導體裝置及其形成方法
JP2014022561A5 (enExample)
KR102329355B1 (ko) 반도체 장치 및 고체 촬상 소자
JP2013033900A5 (enExample)
JP2009176777A5 (enExample)
JP6124502B2 (ja) 固体撮像装置およびその製造方法
JP2015056554A5 (enExample)
JP2013143598A5 (enExample)
CN107689365A (zh) 半导体封装及其制造方法
JP6746631B2 (ja) 固体撮像装置
JP2013232646A (ja) センサーデバイス及びｉｃ装置
JP2013038112A5 (enExample)
JP2012033894A (ja) 固体撮像装置
JP2013175494A5 (enExample)
JP2010226143A5 (enExample)
JP2012044114A5 (enExample)
JP2006344916A5 (enExample)
JP2014075776A5 (ja) 固体撮像装置及びカメラ
JP2013145952A5 (enExample)