JP2012015400A - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP2012015400A
JP2012015400A JP2010151973A JP2010151973A JP2012015400A JP 2012015400 A JP2012015400 A JP 2012015400A JP 2010151973 A JP2010151973 A JP 2010151973A JP 2010151973 A JP2010151973 A JP 2010151973A JP 2012015400 A JP2012015400 A JP 2012015400A
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JP
Japan
Prior art keywords
transistor
pixel
conductivity type
well
amplification
Prior art date
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Pending
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JP2010151973A
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English (en)
Japanese (ja)
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JP2012015400A5 (enExample
Inventor
Fumihiro Inui
文洋 乾
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010151973A priority Critical patent/JP2012015400A/ja
Priority to PCT/JP2011/003643 priority patent/WO2012001939A1/en
Priority to US13/807,207 priority patent/US8878267B2/en
Publication of JP2012015400A publication Critical patent/JP2012015400A/ja
Publication of JP2012015400A5 publication Critical patent/JP2012015400A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010151973A 2010-07-02 2010-07-02 固体撮像装置 Pending JP2012015400A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010151973A JP2012015400A (ja) 2010-07-02 2010-07-02 固体撮像装置
PCT/JP2011/003643 WO2012001939A1 (en) 2010-07-02 2011-06-27 Solid-state imaging device
US13/807,207 US8878267B2 (en) 2010-07-02 2011-06-27 Solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010151973A JP2012015400A (ja) 2010-07-02 2010-07-02 固体撮像装置

Publications (2)

Publication Number Publication Date
JP2012015400A true JP2012015400A (ja) 2012-01-19
JP2012015400A5 JP2012015400A5 (enExample) 2013-08-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010151973A Pending JP2012015400A (ja) 2010-07-02 2010-07-02 固体撮像装置

Country Status (3)

Country Link
US (1) US8878267B2 (enExample)
JP (1) JP2012015400A (enExample)
WO (1) WO2012001939A1 (enExample)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022561A (ja) * 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2014041972A (ja) * 2012-08-23 2014-03-06 Olympus Corp 固体撮像装置および撮像装置
JP2015526878A (ja) * 2012-04-30 2015-09-10 コーニンクレッカ フィリップス エヌ ヴェ デカップリングにより毎ピクセル・アナログチャネルウェル絶縁された画像化検出器
WO2017086181A1 (ja) * 2015-11-19 2017-05-26 ソニー株式会社 光パルス検出装置、光パルス検出方法、放射線計数装置、および生体検査装置
CN106935604A (zh) * 2012-04-04 2017-07-07 索尼公司 固态成像装置和电子设备
JP2017195410A (ja) * 2012-06-25 2017-10-26 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP2018160667A (ja) * 2017-03-22 2018-10-11 パナソニックＩｐマネジメント株式会社 固体撮像装置
WO2019131965A1 (ja) * 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像素子
WO2020054282A1 (ja) * 2018-09-11 2020-03-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP2020088380A (ja) * 2018-11-16 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JPWO2020179494A1 (enExample) * 2019-03-07 2020-09-10
JPWO2020262558A1 (enExample) * 2019-06-26 2020-12-30
JPWO2020262320A1 (enExample) * 2019-06-26 2020-12-30
JPWO2021161134A1 (enExample) * 2020-02-14 2021-08-19
US12501733B2 (en) 2019-03-07 2025-12-16 Sony Semiconductor Solutions Corporation Semiconductor device and imaging unit

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6018376B2 (ja) * 2011-12-05 2016-11-02 キヤノン株式会社 固体撮像装置およびカメラ
US9406711B2 (en) * 2012-06-15 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for backside illuminated image sensors
RU2686867C2 (ru) * 2014-06-10 2019-05-06 Конинклейке Филипс Н.В. Модульная asic детектора визуализации
KR102859488B1 (ko) * 2019-11-29 2025-09-16 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 전자 기기
US12407957B1 (en) * 2022-12-22 2025-09-02 Apple Inc. Multiple-substrate high conversion gain pixels

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JPH0629762A (ja) * 1992-03-18 1994-02-04 Eastman Kodak Co 高感度低ノイズトランジスタ増幅器
JP2002270807A (ja) * 2001-03-08 2002-09-20 Victor Co Of Japan Ltd Ｃｍｏｓイメージセンサ
JP2004071683A (ja) * 2002-08-02 2004-03-04 Amtex Corp 半田付装置
JP2004129015A (ja) * 2002-10-04 2004-04-22 Sony Corp 固体撮像素子及びその駆動方法
JP2008536330A (ja) * 2005-04-13 2008-09-04 シリコンファイル・テクノロジーズ・インコーポレイテッド ３次元構造を有するイメージセンサの分離型単位画素及びその製造方法

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JP3596749B2 (ja) 1999-12-01 2004-12-02 日本ビクター株式会社 Ｃｍｏｓイメージセンサ
JP2003142672A (ja) 2001-10-31 2003-05-16 Mitsubishi Electric Corp 固体イメージセンサ及び固体イメージセンサの製造方法
JP2006196729A (ja) 2005-01-14 2006-07-27 Sony Corp 固体撮像装置およびその製造方法
US7482646B2 (en) * 2006-10-18 2009-01-27 Hejian Technology (Suzhou) Co., Ltd. Image sensor
JP2008235478A (ja) 2007-03-19 2008-10-02 Nikon Corp 撮像素子
JP5985136B2 (ja) * 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
KR101648200B1 (ko) * 2009-10-22 2016-08-12 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP5045738B2 (ja) 2009-12-11 2012-10-10 ソニー株式会社 固体撮像素子及びその制御方法

Patent Citations (5)

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JPH0629762A (ja) * 1992-03-18 1994-02-04 Eastman Kodak Co 高感度低ノイズトランジスタ増幅器
JP2002270807A (ja) * 2001-03-08 2002-09-20 Victor Co Of Japan Ltd Ｃｍｏｓイメージセンサ
JP2004071683A (ja) * 2002-08-02 2004-03-04 Amtex Corp 半田付装置
JP2004129015A (ja) * 2002-10-04 2004-04-22 Sony Corp 固体撮像素子及びその駆動方法
JP2008536330A (ja) * 2005-04-13 2008-09-04 シリコンファイル・テクノロジーズ・インコーポレイテッド ３次元構造を有するイメージセンサの分離型単位画素及びその製造方法

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106935604A (zh) * 2012-04-04 2017-07-07 索尼公司 固态成像装置和电子设备
CN106935604B (zh) * 2012-04-04 2019-04-26 索尼公司 固态成像装置和电子设备
JP2015526878A (ja) * 2012-04-30 2015-09-10 コーニンクレッカ フィリップス エヌ ヴェ デカップリングにより毎ピクセル・アナログチャネルウェル絶縁された画像化検出器
JP2017195410A (ja) * 2012-06-25 2017-10-26 パナソニックＩｐマネジメント株式会社 固体撮像装置
US9508770B2 (en) 2012-07-18 2016-11-29 Sony Corporation Solid-state imaging device and electronic apparatus
JP2014022561A (ja) * 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
US11482565B2 (en) 2012-07-18 2022-10-25 Sony Group Corporation Solid-state imaging device and electronic apparatus
US12062682B2 (en) 2012-07-18 2024-08-13 Sony Group Corporation Solid-state imaging device and electronic apparatus
JP2014041972A (ja) * 2012-08-23 2014-03-06 Olympus Corp 固体撮像装置および撮像装置
WO2017086181A1 (ja) * 2015-11-19 2017-05-26 ソニー株式会社 光パルス検出装置、光パルス検出方法、放射線計数装置、および生体検査装置
US10852183B2 (en) 2015-11-19 2020-12-01 Sony Semiconductors Solutions Corporation Optical pulse detection device, optical pulse detection method, radiation counter device, and biological testing device
JPWO2017086181A1 (ja) * 2015-11-19 2018-10-04 ソニーセミコンダクタソリューションズ株式会社 光パルス検出装置、光パルス検出方法、放射線計数装置、および生体検査装置
JP2018160667A (ja) * 2017-03-22 2018-10-11 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP7178605B2 (ja) 2017-03-22 2022-11-28 パナソニックＩｐマネジメント株式会社 固体撮像装置
WO2019131965A1 (ja) * 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像素子
US11600651B2 (en) 2017-12-27 2023-03-07 Sony Semiconductor Solutions Corporation Imaging element
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US12266675B2 (en) 2017-12-27 2025-04-01 Sony Semiconductor Solutions Corporation Imaging element
WO2019130702A1 (ja) * 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JPWO2019131965A1 (ja) * 2017-12-27 2021-01-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子
KR20210049103A (ko) * 2018-09-11 2021-05-04 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
US11955502B2 (en) 2018-09-11 2024-04-09 Sony Semiconductor Solutions Corporation Solid-state image sensor to reduce display unevenness of a captured image
KR102681913B1 (ko) * 2018-09-11 2024-07-05 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
JP7527204B2 (ja) 2018-09-11 2024-08-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JPWO2020054282A1 (ja) * 2018-09-11 2021-09-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
WO2020054282A1 (ja) * 2018-09-11 2020-03-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP7673274B2 (ja) 2018-11-16 2025-05-08 ソニーセミコンダクタソリューションズ株式会社 撮像装置
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WO2020179494A1 (ja) * 2019-03-07 2020-09-10 ソニーセミコンダクタソリューションズ株式会社 半導体装置および撮像装置
JPWO2020179494A1 (enExample) * 2019-03-07 2020-09-10
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Also Published As

Publication number Publication date
US20130105871A1 (en) 2013-05-02
WO2012001939A1 (en) 2012-01-05
US8878267B2 (en) 2014-11-04

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