JPWO2020179494A1 - - Google Patents

Info

Publication number
JPWO2020179494A1
JPWO2020179494A1 JP2021503968A JP2021503968A JPWO2020179494A1 JP WO2020179494 A1 JPWO2020179494 A1 JP WO2020179494A1 JP 2021503968 A JP2021503968 A JP 2021503968A JP 2021503968 A JP2021503968 A JP 2021503968A JP WO2020179494 A1 JPWO2020179494 A1 JP WO2020179494A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021503968A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020179494A1 publication Critical patent/JPWO2020179494A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021503968A 2019-03-07 2020-02-21 Pending JPWO2020179494A1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019041133 2019-03-07
PCT/JP2020/007048 WO2020179494A1 (ja) 2019-03-07 2020-02-21 半導体装置および撮像装置

Publications (1)

Publication Number Publication Date
JPWO2020179494A1 true JPWO2020179494A1 (enExample) 2020-09-10

Family

ID=72337942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021503968A Pending JPWO2020179494A1 (enExample) 2019-03-07 2020-02-21

Country Status (4)

Country Link
US (1) US12501733B2 (enExample)
JP (1) JPWO2020179494A1 (enExample)
TW (1) TW202044486A (enExample)
WO (1) WO2020179494A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7756713B2 (ja) * 2021-05-26 2025-10-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
JP2022184222A (ja) * 2021-05-31 2022-12-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子
US12046620B2 (en) 2021-12-15 2024-07-23 Nanya Technology Corporation Optical semiconductor device with composite intervening structure

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193431A (ja) * 2002-12-12 2004-07-08 Renesas Technology Corp 半導体装置およびその製造方法
JP2006261440A (ja) * 2005-03-17 2006-09-28 Nec Electronics Corp 半導体装置およびその製造方法
US20070018075A1 (en) * 2005-07-21 2007-01-25 Stmicroelectronics S.A. Image sensor
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2013232647A (ja) * 2012-04-27 2013-11-14 Taiwan Semiconductor Manufacturing Co Ltd 縦方向に集積化される背面照射型イメージセンサ装置
US20140138752A1 (en) * 2012-08-10 2014-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. System and Method for Fabricating a 3D Image Sensor Structure
JP2014236183A (ja) * 2013-06-05 2014-12-15 株式会社東芝 イメージセンサ装置及びその製造方法
JP2015023150A (ja) * 2013-07-19 2015-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07245306A (ja) 1994-01-17 1995-09-19 Sony Corp 半導体装置における膜平坦化方法
KR100286126B1 (ko) * 1999-02-13 2001-03-15 윤종용 다층의 패시배이션막을 이용한 도전층 사이에 공기 공간을 형성하는 방법
US7042095B2 (en) 2002-03-29 2006-05-09 Renesas Technology Corp. Semiconductor device including an interconnect having copper as a main component
US20060183317A1 (en) * 2003-03-14 2006-08-17 Junji Noguchi Semiconductor device and a method of manufacturing the same
JP4956919B2 (ja) * 2005-06-08 2012-06-20 株式会社日立製作所 半導体装置およびその製造方法
US20080116171A1 (en) * 2006-11-22 2008-05-22 Clarkson University Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide
JP5334434B2 (ja) 2007-06-04 2013-11-06 パナソニック株式会社 半導体装置の製造方法
JP5326949B2 (ja) 2009-09-09 2013-10-30 株式会社日立製作所 半導体装置
JP2013149679A (ja) 2012-01-17 2013-08-01 Toshiba Corp 半導体装置
KR20130092884A (ko) * 2012-02-13 2013-08-21 에스케이하이닉스 주식회사 반도체 소자의 배선 구조체 및 제조 방법
JP6521586B2 (ja) * 2014-07-31 2019-05-29 キヤノン株式会社 固体撮像素子および撮像システム
KR102628719B1 (ko) 2016-02-12 2024-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6538960B2 (ja) * 2016-02-23 2019-07-03 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102491496B1 (ko) * 2018-01-05 2023-01-20 삼성전자주식회사 광전 소자, 이미지 센서 및 전자 장치
JP7353729B2 (ja) * 2018-02-09 2023-10-02 キヤノン株式会社 半導体装置、半導体装置の製造方法
US10468297B1 (en) * 2018-04-27 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-based etch-stop layer

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193431A (ja) * 2002-12-12 2004-07-08 Renesas Technology Corp 半導体装置およびその製造方法
JP2006261440A (ja) * 2005-03-17 2006-09-28 Nec Electronics Corp 半導体装置およびその製造方法
US20070018075A1 (en) * 2005-07-21 2007-01-25 Stmicroelectronics S.A. Image sensor
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2013232647A (ja) * 2012-04-27 2013-11-14 Taiwan Semiconductor Manufacturing Co Ltd 縦方向に集積化される背面照射型イメージセンサ装置
US20140138752A1 (en) * 2012-08-10 2014-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. System and Method for Fabricating a 3D Image Sensor Structure
JP2014236183A (ja) * 2013-06-05 2014-12-15 株式会社東芝 イメージセンサ装置及びその製造方法
JP2015023150A (ja) * 2013-07-19 2015-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2020179494A1 (ja) 2020-09-10
TW202044486A (zh) 2020-12-01
US12501733B2 (en) 2025-12-16
US20220123040A1 (en) 2022-04-21

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