JP2011522120A5 - - Google Patents

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Publication number
JP2011522120A5
JP2011522120A5 JP2011511113A JP2011511113A JP2011522120A5 JP 2011522120 A5 JP2011522120 A5 JP 2011522120A5 JP 2011511113 A JP2011511113 A JP 2011511113A JP 2011511113 A JP2011511113 A JP 2011511113A JP 2011522120 A5 JP2011522120 A5 JP 2011522120A5
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JP
Japan
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tellurium
precursor
sime
geme
reactor
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JP2011511113A
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English (en)
Japanese (ja)
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JP2011522120A (ja
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Priority claimed from US12/475,204 external-priority patent/US8101237B2/en
Publication of JP2011522120A publication Critical patent/JP2011522120A/ja
Publication of JP2011522120A5 publication Critical patent/JP2011522120A5/ja
Pending legal-status Critical Current

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JP2011511113A 2008-05-29 2009-05-29 膜堆積用のテルル前駆体 Pending JP2011522120A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US5712808P 2008-05-29 2008-05-29
US61/057,128 2008-05-29
US12/475,204 US8101237B2 (en) 2008-05-29 2009-05-29 Tellurium precursors for film deposition
PCT/IB2009/008067 WO2010055423A2 (en) 2008-05-29 2009-05-29 Tellurium precursors for film deposition
US12/475,204 2009-05-29

Publications (2)

Publication Number Publication Date
JP2011522120A JP2011522120A (ja) 2011-07-28
JP2011522120A5 true JP2011522120A5 (OSRAM) 2011-09-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011511113A Pending JP2011522120A (ja) 2008-05-29 2009-05-29 膜堆積用のテルル前駆体

Country Status (6)

Country Link
US (1) US8101237B2 (OSRAM)
JP (1) JP2011522120A (OSRAM)
KR (1) KR20110014160A (OSRAM)
CN (1) CN102046838A (OSRAM)
TW (1) TWI480411B (OSRAM)
WO (1) WO2010055423A2 (OSRAM)

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TWI848976B (zh) * 2018-10-04 2024-07-21 日商Ａｄｅｋａ股份有限公司 原子層堆積法用薄膜形成用原料、薄膜形成用原料、薄膜之製造方法及化合物
TWI889746B (zh) * 2020-02-20 2025-07-11 美商應用材料股份有限公司 含碲薄膜之沉積
KR102444272B1 (ko) * 2020-05-18 2022-09-16 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법
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