JP2011521953A5 - - Google Patents

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Publication number
JP2011521953A5
JP2011521953A5 JP2011511749A JP2011511749A JP2011521953A5 JP 2011521953 A5 JP2011521953 A5 JP 2011521953A5 JP 2011511749 A JP2011511749 A JP 2011511749A JP 2011511749 A JP2011511749 A JP 2011511749A JP 2011521953 A5 JP2011521953 A5 JP 2011521953A5
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JP
Japan
Prior art keywords
integer
doped silane
formula
silane
doped
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Granted
Application number
JP2011511749A
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English (en)
Japanese (ja)
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JP5519649B2 (ja
JP2011521953A (ja
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Priority claimed from PCT/US2009/045132 external-priority patent/WO2009148878A2/en
Publication of JP2011521953A publication Critical patent/JP2011521953A/ja
Publication of JP2011521953A5 publication Critical patent/JP2011521953A5/ja
Application granted granted Critical
Publication of JP5519649B2 publication Critical patent/JP5519649B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011511749A 2008-05-29 2009-05-26 官能化されたシランの形成法 Expired - Fee Related JP5519649B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13027108P 2008-05-29 2008-05-29
US61/130,271 2008-05-29
PCT/US2009/045132 WO2009148878A2 (en) 2008-05-29 2009-05-26 Method of forming functionalized silanes

Publications (3)

Publication Number Publication Date
JP2011521953A JP2011521953A (ja) 2011-07-28
JP2011521953A5 true JP2011521953A5 (enExample) 2012-05-24
JP5519649B2 JP5519649B2 (ja) 2014-06-11

Family

ID=41398780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011511749A Expired - Fee Related JP5519649B2 (ja) 2008-05-29 2009-05-26 官能化されたシランの形成法

Country Status (3)

Country Link
US (1) US8609799B2 (enExample)
JP (1) JP5519649B2 (enExample)
WO (1) WO2009148878A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010040231A1 (de) * 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
WO2012050869A1 (en) * 2010-09-28 2012-04-19 Ndsu Research Foundation Atmospheric-pressure plasma-enhanced chemical vapor deposition
JP2016519640A (ja) * 2013-03-15 2016-07-07 エヌディーエスユー リサーチ ファウンデーション 液体シランおよびヘテロ原子添加物を処理により形成されるシリコン材料
DE102013021306A1 (de) 2013-12-19 2015-06-25 Johann Wolfgang Goethe-Universität Verfahren zum Herstellen von linearen, cyclischen und/oder käfigartigen perhalogenierten Oligo- und Polysilyl-Anionen
JP7055674B2 (ja) * 2018-03-15 2022-04-18 株式会社日本触媒 ポリシラン組成物、及びヘテロ元素導入ポリシラン組成物の製造方法
US11649560B2 (en) 2019-06-20 2023-05-16 Applied Materials, Inc. Method for forming silicon-phosphorous materials

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