JP5519649B2 - 官能化されたシランの形成法 - Google Patents

官能化されたシランの形成法 Download PDF

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JP5519649B2
JP5519649B2 JP2011511749A JP2011511749A JP5519649B2 JP 5519649 B2 JP5519649 B2 JP 5519649B2 JP 2011511749 A JP2011511749 A JP 2011511749A JP 2011511749 A JP2011511749 A JP 2011511749A JP 5519649 B2 JP5519649 B2 JP 5519649B2
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silane
integer
formula
doped
doped silane
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Japanese (ja)
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JP2011521953A5 (enExample
JP2011521953A (ja
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ダグラス エル． シュルツ
スーラウ ダイ
ケンドリック ジェイ． ネルソン
フィリップ ボジョウク
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エヌディーエスユー リサーチ ファウンデーション
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/50—Organo-phosphines
    • C07F9/5004—Acyclic saturated phosphines
    • C07F9/5009—Acyclic saturated phosphines substituted by B, Si, P or a metal
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Silicon Compounds (AREA)
JP2011511749A 2008-05-29 2009-05-26 官能化されたシランの形成法 Expired - Fee Related JP5519649B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13027108P 2008-05-29 2008-05-29
US61/130,271 2008-05-29
PCT/US2009/045132 WO2009148878A2 (en) 2008-05-29 2009-05-26 Method of forming functionalized silanes

Publications (3)

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JP2011521953A JP2011521953A (ja) 2011-07-28
JP2011521953A5 JP2011521953A5 (enExample) 2012-05-24
JP5519649B2 true JP5519649B2 (ja) 2014-06-11

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JP2011511749A Expired - Fee Related JP5519649B2 (ja) 2008-05-29 2009-05-26 官能化されたシランの形成法

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US (1) US8609799B2 (enExample)
JP (1) JP5519649B2 (enExample)
WO (1) WO2009148878A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010040231A1 (de) * 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
WO2012050869A1 (en) * 2010-09-28 2012-04-19 Ndsu Research Foundation Atmospheric-pressure plasma-enhanced chemical vapor deposition
JP2016519640A (ja) * 2013-03-15 2016-07-07 エヌディーエスユー リサーチ ファウンデーション 液体シランおよびヘテロ原子添加物を処理により形成されるシリコン材料
DE102013021306A1 (de) 2013-12-19 2015-06-25 Johann Wolfgang Goethe-Universität Verfahren zum Herstellen von linearen, cyclischen und/oder käfigartigen perhalogenierten Oligo- und Polysilyl-Anionen
JP7055674B2 (ja) * 2018-03-15 2022-04-18 株式会社日本触媒 ポリシラン組成物、及びヘテロ元素導入ポリシラン組成物の製造方法
US11649560B2 (en) 2019-06-20 2023-05-16 Applied Materials, Inc. Method for forming silicon-phosphorous materials

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JPS6060916A (ja) * 1983-09-14 1985-04-08 Tokuyama Soda Co Ltd 低ハロゲン化シランまたはモノシランの製造方法
US4683147A (en) * 1984-04-16 1987-07-28 Canon Kabushiki Kaisha Method of forming deposition film
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JPS62232116A (ja) * 1986-04-01 1987-10-12 Hitachi Metals Ltd 水素化アモルフアスシリコン及びその製造方法
US4841083A (en) * 1987-06-03 1989-06-20 Mitsui Toatsu Chemicals, Incorporated Ladder polysilanes
US4827009A (en) * 1987-09-03 1989-05-02 North Dakota State University Hydrosilation process
JP3878278B2 (ja) * 1997-05-12 2007-02-07 株式会社トクヤマ 燐含有量の少ない多結晶シリコンの製造方法
US5942637A (en) * 1998-03-30 1999-08-24 North Dakota State University Research Foundation Compounds containing tetradecachlorocyclohexasilane dianion
KR20010052441A (ko) * 1999-03-30 2001-06-25 마쯔모또 에이찌 코팅 조성물
CN100385683C (zh) * 1999-03-30 2008-04-30 精工爱普生株式会社 薄膜晶体管的制造方法
EP1715509B1 (en) * 1999-03-30 2011-08-24 JSR Corporation Method of forming silicon films
WO2000059014A1 (fr) 1999-03-30 2000-10-05 Seiko Epson Corporation cROCEDE PRODUCTION D'UN FILM DE SILICIUM ET COMPOSITION D'ENCRE POUR IMPRIMANTE A JET D'ENCRE
DE60041569D1 (de) * 1999-03-30 2009-04-02 Seiko Epson Corp Herstellungsverfahren für eine solarzelle
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JP3745959B2 (ja) * 2000-12-28 2006-02-15 セイコーエプソン株式会社 シリコン薄膜パターンの形成方法
JP4866534B2 (ja) * 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
KR100627203B1 (ko) * 2001-08-14 2006-09-22 제이에스알 가부시끼가이샤 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법
JP2003313299A (ja) * 2002-04-22 2003-11-06 Seiko Epson Corp 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法
AU2003262236A1 (en) * 2002-08-23 2004-03-11 Jsr Corporation Composition for forming silicon film and method for forming silicon film
JP4042685B2 (ja) * 2003-03-26 2008-02-06 セイコーエプソン株式会社 トランジスタの製造方法
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US7897696B2 (en) * 2007-02-01 2011-03-01 Afton Chemical Corporation Process for the preparation of polyalkenyl succinic anhydrides

Also Published As

Publication number Publication date
US20110108777A1 (en) 2011-05-12
JP2011521953A (ja) 2011-07-28
WO2009148878A2 (en) 2009-12-10
US8609799B2 (en) 2013-12-17
WO2009148878A3 (en) 2010-04-15

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