JP2011518098A - 酸化セリウム製造方法、これから得られる酸化セリウムおよびこれを含むcmpスラリー - Google Patents
酸化セリウム製造方法、これから得られる酸化セリウムおよびこれを含むcmpスラリー Download PDFInfo
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- JP2011518098A JP2011518098A JP2011500705A JP2011500705A JP2011518098A JP 2011518098 A JP2011518098 A JP 2011518098A JP 2011500705 A JP2011500705 A JP 2011500705A JP 2011500705 A JP2011500705 A JP 2011500705A JP 2011518098 A JP2011518098 A JP 2011518098A
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- cerium oxide
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- primary alcohol
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- 229910000420 cerium oxide Inorganic materials 0.000 title claims abstract description 129
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 title claims abstract description 129
- 239000002002 slurry Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 238000005498 polishing Methods 0.000 claims abstract description 83
- 150000003138 primary alcohols Chemical class 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 32
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 31
- 239000002270 dispersing agent Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 4
- 229920002125 Sokalan® Polymers 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 235000011187 glycerol Nutrition 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 239000011541 reaction mixture Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 91
- 239000006185 dispersion Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000126 substance Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000004438 BET method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229920006318 anionic polymer Polymers 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/10—Preparation or treatment, e.g. separation or purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B17/00—Sulfur; Compounds thereof
- C01B17/20—Methods for preparing sulfides or polysulfides, in general
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
- C01P2006/64—Optical properties, e.g. expressed in CIELAB-values b* (yellow-blue axis)
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Geology (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Abstract
Description
実施例1
比表面積が26m2/gである酸化セリウム100gとエタノール300gを混合した後、30℃で20分間100rpmの速度で攪拌した。前記で得られた結果物を遠心分離し洗浄した後、酸素雰囲気下、50℃で6時間乾燥させた。
下記表1に提示した通り、酸化セリウムとエタノールの接触温度、接触時間、または接触時攪拌速度を変化させたことを除いては、実施例1と同様な方法で酸化セリウムを製造した。
実施例5
前記実施例1〜4でそれぞれ製造された酸化セリウム100g、ポリアクリル酸分散剤(Aldrich、 Mw 4,000)2g、および超純水900gを混合した後、酸化セリウムの含量が全体スラリー100重量部当り2重量部になるように、前記混合液に超純水を添加して酸化セリウム分散液を製造した。
実施例1〜4の酸化セリウムの代わりに、比表面積26m2/gの酸化セリウムを使用したことを除いては、前記実施例5と同様な方法でCMPスラリーを製造した。
前記実施例5および比較例1でそれぞれ製造されたCMPスラリーを下記条件で1分間研磨した後、基板をきれいに洗浄して研磨により発生した厚さの変化を測定して研磨性能を評価した。その結果を下記表2に示した。
研磨装備:POLY 400(GNP Technology社)
パッド:ポリウレタン系列
プラテン速度:90rpm
キャリア速度:90rpm
圧力:280g/cm2
スラリー流速:100ml/min
PECVD(plasma enhanced chemical vapor deposition)により7000Å蒸着された酸化珪素膜形成ウエハー(5in2)
LPCVD(Low pressure chemical vapor deposition)により2000Å蒸着された窒化珪素膜形成ウエハー(5in2)
研磨前後の厚さの変化は光学膜厚の測定装備であるNanospec 6100(Nanometeics社)を利用して測定した。このような研磨前後の厚さの変化から各酸化珪素膜または窒化珪素膜に対する時間当り研磨速度を算出し、酸化珪素膜に対する研磨速度/窒化珪素膜に対する研磨速度から除去選択比を算出した。
Claims (18)
- 酸化セリウムと1次アルコールを接触させて前記酸化セリウムの比表面積を10%以上増加させる段階を含む、酸化セリウム製造方法。
- 前記酸化セリウムと1次アルコールを接触させて前記酸化セリウムの比表面積を10〜60%増加させる、請求項1に記載の酸化セリウム製造方法。
- 前記酸化セリウムと1次アルコールの接触質量比は、1:0.1〜1:4である、請求項1に記載の酸化セリウム製造方法。
- 前記酸化セリウムと1次アルコールの接触は、10℃〜70℃の温度範囲で行なわれる、請求項1に記載の酸化セリウム製造方法。
- 前記酸化セリウムと1次アルコールの接触は、5分〜6時間行なわれる、請求項1に記載の酸化セリウム製造方法。
- 前記酸化セリウムと1次アルコールの接触は、10rpm〜500rpmの攪拌速度下で行なわれる、請求項1に記載の酸化セリウム製造方法。
- 前記1次アルコールは、炭素数が1〜6である、請求項1に記載の酸化セリウム製造方法。
- 酸化セリウムと1次アルコールを接触させた後、反応混合物の乾燥段階をさらに含む、請求項1に記載の酸化セリウム製造方法。
- 前記乾燥段階は、体積比10%以上の酸素を含む雰囲気下で行なわれる、請求項7に記載の酸化セリウム製造方法。
- 請求項1乃至請求項9のいずれか一項に記載の方法により得られ、比表面積が8m2/g〜100m2/gである、酸化セリウム。
- 結晶粒の大きさが、10〜60nmである、請求項10に記載の酸化セリウム。
- 請求項10に記載の酸化セリウムを含有した研磨材を含む、CMPスラリー。
- 水および分散剤をさらに含む、請求項12に記載のCMPスラリー。
- スラリー100重量部当り1〜10重量部の研磨材を含み、前記研磨材100重量部当り0.0001〜10重量部の分散剤を含む、請求項13に記載のCMPスラリー。
- 前記分散剤は、ポリビニルアルコール、エチレングリコール、グリセリン、ポリエチレングリコール、ポリプロピレングリコール、ポリビニルピロリドン、ポリアクリル酸、ポリアクリル酸アンモニウム塩およびポリアクリルマレイン酸からなる群より選択される一つ以上を含む、請求項13に記載のCMPスラリー。
- 請求項12に記載のCMPスラリーで半導体基板上の研磨対象膜を研磨する段階を含む、研磨方法。
- 前記研磨対象膜は、酸化珪素膜を含む、請求項16に記載の研磨方法。
- 半導体基板上に所定の窒化珪素膜パターンを形成する段階;
前記窒化珪素膜パターンをマスクとして半導体基板をエッチングしてトレンチを形成する段階;
前記トレンチが埋込まれる酸化珪素膜を形成する段階;および
記窒化珪素膜パターンが露出するまで、請求項12に記載のCMPスラリーを使用して前記酸化珪素膜を研磨する段階;
を含む、半導体素子の素子分離膜形成方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20080026011 | 2008-03-20 | ||
KR10-2008-0026011 | 2008-03-20 | ||
KR1020090017964A KR101184731B1 (ko) | 2008-03-20 | 2009-03-03 | 산화세륨 제조 방법, 이로부터 얻어진 산화세륨 및 이를 포함하는 cmp슬러리 |
KR10-2009-0017964 | 2009-03-03 | ||
PCT/KR2009/001384 WO2009116807A1 (en) | 2008-03-20 | 2009-03-18 | Method for preparing cerium oxide, cerium oxide prepared therefrom and cmp slurry comprising the same |
Publications (2)
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JP2011518098A true JP2011518098A (ja) | 2011-06-23 |
JP5552475B2 JP5552475B2 (ja) | 2014-07-16 |
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JP2011500705A Active JP5552475B2 (ja) | 2008-03-20 | 2009-03-18 | 酸化セリウム製造方法、これから得られる酸化セリウムおよびこれを含むcmpスラリー |
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US (1) | US8361878B2 (ja) |
JP (1) | JP5552475B2 (ja) |
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CN (1) | CN101978018B (ja) |
TW (1) | TWI406815B (ja) |
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JP2021014375A (ja) * | 2019-07-11 | 2021-02-12 | 日揮触媒化成株式会社 | セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液 |
US11352523B2 (en) | 2018-03-22 | 2022-06-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set and polishing method |
US11566150B2 (en) | 2017-03-27 | 2023-01-31 | Showa Denko Materials Co., Ltd. | Slurry and polishing method |
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US11814548B2 (en) | 2017-03-27 | 2023-11-14 | Resonac Corporation | Polishing liquid, polishing liquid set, and polishing method |
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US11767448B2 (en) | 2018-03-22 | 2023-09-26 | Resonac Corporation | Polishing liquid, polishing liquid set, and polishing method |
US11572490B2 (en) | 2018-03-22 | 2023-02-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
US11352523B2 (en) | 2018-03-22 | 2022-06-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set and polishing method |
US11505731B2 (en) | 2018-07-26 | 2022-11-22 | Showa Denko Materials Co., Ltd. | Slurry and polishing method |
US11499078B2 (en) | 2018-07-26 | 2022-11-15 | Showa Denko Materials Co., Ltd. | Slurry, polishing solution production method, and polishing method |
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US11518920B2 (en) | 2018-07-26 | 2022-12-06 | Showa Denko Materials Co., Ltd. | Slurry, and polishing method |
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JPWO2020021732A1 (ja) * | 2018-07-26 | 2021-08-05 | 昭和電工マテリアルズ株式会社 | スラリ及び研磨方法 |
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JP7315394B2 (ja) | 2019-07-11 | 2023-07-26 | 日揮触媒化成株式会社 | セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液 |
JP2021014375A (ja) * | 2019-07-11 | 2021-02-12 | 日揮触媒化成株式会社 | セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液 |
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Publication number | Publication date |
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CN101978018A (zh) | 2011-02-16 |
CN101978018B (zh) | 2013-09-04 |
JP5552475B2 (ja) | 2014-07-16 |
TWI406815B (zh) | 2013-09-01 |
KR101184731B1 (ko) | 2012-09-20 |
TW200948718A (en) | 2009-12-01 |
US20110117720A1 (en) | 2011-05-19 |
US8361878B2 (en) | 2013-01-29 |
KR20090101090A (ko) | 2009-09-24 |
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