JP5247691B2 - 酸化セリウム粉末、その製造方法及びこれを含むcmpスラリー - Google Patents
酸化セリウム粉末、その製造方法及びこれを含むcmpスラリー Download PDFInfo
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- JP5247691B2 JP5247691B2 JP2009521699A JP2009521699A JP5247691B2 JP 5247691 B2 JP5247691 B2 JP 5247691B2 JP 2009521699 A JP2009521699 A JP 2009521699A JP 2009521699 A JP2009521699 A JP 2009521699A JP 5247691 B2 JP5247691 B2 JP 5247691B2
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- cerium oxide
- oxide powder
- cerium
- cmp slurry
- silicon nitride
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- 229910000420 cerium oxide Inorganic materials 0.000 title claims description 104
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 title claims description 104
- 239000000843 powder Substances 0.000 title claims description 84
- 239000002002 slurry Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000005498 polishing Methods 0.000 claims description 62
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 54
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 53
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 53
- 239000002245 particle Substances 0.000 claims description 47
- 239000013078 crystal Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 37
- 238000001354 calcination Methods 0.000 claims description 30
- 239000002270 dispersing agent Substances 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 238000010298 pulverizing process Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 4
- 229920002125 Sokalan® Polymers 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229920006318 anionic polymer Polymers 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 235000011187 glycerol Nutrition 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 239000010408 film Substances 0.000 description 90
- 238000009826 distribution Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 15
- 239000006185 dispersion Substances 0.000 description 13
- 238000002441 X-ray diffraction Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000010304 firing Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 3
- RGHNJXZEOKUKBD-SQOUGZDYSA-N Gluconic acid Natural products OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000174 gluconic acid Substances 0.000 description 3
- 235000012208 gluconic acid Nutrition 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229940050410 gluconate Drugs 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000004448 titration Methods 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000000887 hydrating effect Effects 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000012066 reaction slurry Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/10—Preparation or treatment, e.g. separation or purification
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
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- Mechanical Treatment Of Semiconductor (AREA)
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- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
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Description
(a)六方晶系の結晶構造を有する炭酸セリウムを一次か焼するステップ、及び
(b)前記一次か焼が施された粉末を一次か焼より高温で二次か焼するステップ、
を含んで製造することができる。
<酸化セリウム粉末の製造>
六方晶系の結晶構造を有する炭酸セリウム粉末(図2のXRDデータを参照)1kgをアルミナるつぼ内に装入し、350℃で12時間、十分に空気が供給される酸化条件下で一次か焼を行った後、ジェットミルで粉砕した。この粉砕された粉末を750℃で二時間二次か焼を行うことで淡黄色の酸化セリウム粉末を製造した。
上記で製造した酸化セリウム粉末0.5kg、ポリアクリル酸分散剤(Aldrich)25g及び純水5Lを混合して酸化セリウム分散液を製造した。この酸化セリウム分散液をアンモニア水を用いてpH7.5と滴定した後、ボールミルによって分散安定性の向上及び粒度調節工程を行った。なお、ボールミルは、1mmサイズのジルコニアビーズ1kgを使用し、250rpmの速度で2時間行った。
二次か焼の条件を850℃、二時間に変更したことを除いては、実施例1と同様にして酸化セリウム粉末及びこれを含むCMPスラリーを製造した。スラリーに分散された酸化セリウム粉末の平均粒径は、176nmで、粒度分布は、70〜300nmであった。
二次か焼の条件を950℃、二時間に変更したことを除いては、実施例1と同様にして酸化セリウム粉末及びこれを含むCMPスラリーを製造した。スラリーに分散された酸化セリウム粉末の平均粒径は、182nmで、粒度分布は、70〜300nmであった。
酸化セリウム粉末の製造時、斜方晶系の結晶構造を有する炭酸セリウム(図2のXRDデータを参照)を使用したことを除いては、実施例1と同様にして酸化セリウム粉末及びこれを含むCMPスラリーを製造した。
二次か焼の条件を850℃、二時間に変更したことを除いては、比較例1と同様にして酸化セリウム粉末及びこれを含むCMPスラリーを製造した。スラリーに分散された酸化セリウム粉末の平均粒径は、181nmで、粒度分布は、70〜300nmであった。
二次か焼の条件を950℃、二時間に変更したことを除いては、比較例1と同様にして酸化セリウム粉末及びこれを含むCMPスラリーを製造した。スラリーに分散された酸化セリウム粉末の平均粒径は、184nmで、粒度分布は、70〜300nmであった。
酸化セリウム粉末の製造時、ランタナイト(Lanthanite)−(Ce)炭酸セリウム(図2のXRDデータを参照)を使用したことを除いては、実施例1と同様にして酸化セリウム粉末及びこれを含むCMPスラリーを製造した。
二次か焼の条件を850℃、二時間に変更したことを除いては、比較例4と同様にして酸化セリウム粉末及びこれを含むCMPスラリーを製造した。スラリーに分散された酸化セリウム粉末の平均粒径は、180nmで、粒度分布は、70〜300nmであった。
二次か焼の条件を950℃、二時間に変更したことを除いては、比較例4と同様にして酸化セリウム粉末及びこれを含むCMPスラリーを製造した。スラリーに分散された酸化セリウム粉末の平均粒径は、181nmで、粒度分布は、70〜300nmであった。
上記の実施例1〜3及び比較例1〜6で製造されたCMPスラリーを下記の条件で1分間研磨した後、基板をきれいに洗浄して研磨による厚さの変化を測定し、研磨性能を評価した。その結果を次の表1に示した。
(研磨条件)
システム:GNP POLY 400(GNPテクノロジ)
パッド:ポリウレタン系列
プラテン速度:90rpm
キャリヤ速度:90rpm
圧力:4psi
スラリー流速:100ml/min
(研磨対象)
プラズマCVD法で7000Å蒸着された酸化珪素ウェハ
減圧CVD法で1500Å蒸着された窒化珪素ウェハ
(評価)
研磨前後の厚さ変化は、光学膜厚測定装置であるNanospec6100(Nanometrics社製)で測定した。
面内均一性(Delta WIWNU)は、ASTM(Standard Deviation Uniformity)方式で算出した。
101 パッド酸化珪素膜(SiO2)
102 窒化珪素エッチストップ層
103 トレンチ
104 絶縁用シリコン酸化膜
105 ゲートシリコン酸化膜
Claims (17)
- 六方晶系の結晶構造を有する炭酸セリウムを前駆物質として使用して酸化セリウム粉末を製造する方法として、
(a)前記六方晶系の結晶構造を有する炭酸セリウムを一次か焼するステップ、及び
(b)前記一次か焼が施された粉末を一次か焼より高温で二次か焼するステップを含み、
前記酸化セリウム粉末は、化学機械的研磨(CMP)用であることを特徴とする酸化セリウム粉末の製造方法。 - 前記六方晶系の結晶構造を有する炭酸セリウムは、平均粒径が0.1〜20μmの範囲であることを特徴とする請求項1に記載の製造方法。
- 前記一次か焼は、200〜400℃の温度で6〜100時間にわたって行われることを特徴とする請求項1に記載の製造方法。
- 前記二次か焼は、600〜1200℃の温度で30分間〜6時間にわたって行われることを特徴とする請求項1に記載の製造方法。
- 前記ステップ(a)とステップ(b)との間に、一次か焼された粉末を粉砕するステップをさらに含むことを特徴とする請求項1に記載の製造方法。
- 120°±20°のエッジを少なくとも1つ有する六角板状の粒子を50vol%以上含み、
六方晶系の結晶構造を有する炭酸セリウムを前駆物質として製造され、
請求項1乃至5のいずれか1つに記載の製造方法で製造されることを特徴とする酸化セリウム粉末。 - 結晶粒の平均大きさが5nm〜60nmであることを特徴とする請求項6に記載の酸化セリウム粉末。
- 窒化珪素膜に対する酸化珪素膜の除去選択比が30以上であることを特徴とする請求項6に記載の酸化セリウム粉末。
- 面内均一性は、デルタ面内均一性(%)の値が10%以下であることを特徴とする請求項6に記載の酸化セリウム粉末。
- 研磨材、分散剤及び水を含み、前記研磨材は、請求項6に記載の酸化セリウム粉末を含むことを特徴とするCMPスラリー。
- 前記酸化セリウム粉末は、スラリー100重量部当り0.1〜50重量部の範囲で含まれ、前記分散剤は、研磨材100重量部当り0.5〜10重量部の範囲で含まれることを特徴とする請求項10に記載のCMPスラリー。
- 前記分散剤は、非イオン性ポリマーまたは陰イオン性ポリマーであることを特徴とする請求項10に記載のCMPスラリー。
- 前記分散剤は、ポリビニルアルコール、エチレングリコール、グリセリン、ポリエチレングリコール、ポリプロピレングリコール、ポリビニルピロリドン、ポリアクリル酸、ポリアクリル酸アンモニウム塩及びポリアクリルマレイン酸からなる群から選択されることを特徴とする請求項10に記載のCMPスラリー。
- 請求項10に記載のCMPスラリーを研磨液として適用することを特徴とする半導体素子の浅いトレンチ素子分離(STI)方法。
- CMPスラリーの研磨材として、請求項1乃至5のいずれか1つに記載の製造方法で六方晶系の結晶構造を有する炭酸セリウムを前駆物質として製造された酸化セリウムを使用することで、窒化珪素膜に対する酸化珪素膜の除去選択比、面内均一性またはこれらの両方を調節する方法。
- 前記窒化珪素膜に対する酸化珪素膜の除去選択比は、30以上であることを特徴とする請求項15に記載の調節方法。
- 前記面内均一性は、デルタ面内均一性(%)の値が10%以下であることを特徴とする請求項15に記載の調節方法。
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KR10-2006-0071703 | 2006-07-28 | ||
KR10-2007-0046206 | 2007-05-11 | ||
KR1020070046206A KR20080011044A (ko) | 2006-07-28 | 2007-05-11 | 산화세륨 분말, 그 제조방법, 및 이를 포함하는cmp슬러리 |
PCT/KR2007/003579 WO2008013407A1 (en) | 2006-07-28 | 2007-07-26 | Cerium oxide powder, method for preparing the same, and cmp slurry comprising the same |
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KR101184732B1 (ko) | 2008-03-20 | 2012-09-20 | 주식회사 엘지화학 | 탄산세륨 제조 방법 |
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WO2009116806A1 (en) * | 2008-03-20 | 2009-09-24 | Lg Chem, Ltd. | Method for preparing cerium carbonate |
KR101285948B1 (ko) * | 2009-07-21 | 2013-07-12 | 한양대학교 산학협력단 | 멀티 선택비를 갖는 연마 슬러리 조성물 및 이를 사용한 반도체 소자 제조방법 |
KR101238786B1 (ko) * | 2010-02-05 | 2013-02-28 | 주식회사 엘지화학 | 탄산세륨의 제조 방법 및 산화세륨의 제조 방법 |
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