JP2011517131A - 小ビームブランカ構成体 - Google Patents

小ビームブランカ構成体 Download PDF

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Publication number
JP2011517131A
JP2011517131A JP2011504450A JP2011504450A JP2011517131A JP 2011517131 A JP2011517131 A JP 2011517131A JP 2011504450 A JP2011504450 A JP 2011504450A JP 2011504450 A JP2011504450 A JP 2011504450A JP 2011517131 A JP2011517131 A JP 2011517131A
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JP
Japan
Prior art keywords
array
small
deflector
small beam
blanker
Prior art date
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Pending
Application number
JP2011504450A
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English (en)
Japanese (ja)
Inventor
ウィーランド、ヤン・ヤコ
ファン・フェーン、アレクサンダー・ヘンドリク・ビンセント
Original Assignee
マッパー・リソグラフィー・アイピー・ビー．ブイ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by マッパー・リソグラフィー・アイピー・ビー．ブイ． filed Critical マッパー・リソグラフィー・アイピー・ビー．ブイ．
Publication of JP2011517131A publication Critical patent/JP2011517131A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
JP2011504450A 2008-04-15 2009-04-15 小ビームブランカ構成体 Pending JP2011517131A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15
US61/045,243 2008-04-15
PCT/EP2009/054468 WO2009127659A2 (en) 2008-04-15 2009-04-15 Beamlet blanker arrangement

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013024809A Division JP5384759B2 (ja) 2008-04-15 2013-02-12 小ビームブランカ構成体

Publications (1)

Publication Number Publication Date
JP2011517131A true JP2011517131A (ja) 2011-05-26

Family

ID=40786929

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2011504450A Pending JP2011517131A (ja) 2008-04-15 2009-04-15 小ビームブランカ構成体
JP2011504449A Active JP5268170B2 (ja) 2008-04-15 2009-04-15 投影レンズ構成体
JP2013024809A Active JP5384759B2 (ja) 2008-04-15 2013-02-12 小ビームブランカ構成体
JP2013024799A Active JP5475155B2 (ja) 2008-04-15 2013-02-12 投影レンズ構成体

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2011504449A Active JP5268170B2 (ja) 2008-04-15 2009-04-15 投影レンズ構成体
JP2013024809A Active JP5384759B2 (ja) 2008-04-15 2013-02-12 小ビームブランカ構成体
JP2013024799A Active JP5475155B2 (ja) 2008-04-15 2013-02-12 投影レンズ構成体

Country Status (7)

Country Link
EP (3) EP2402979B1 (enExample)
JP (4) JP2011517131A (enExample)
KR (4) KR101638766B1 (enExample)
CN (2) CN102067272B (enExample)
AT (1) ATE535932T1 (enExample)
TW (3) TW201003713A (enExample)
WO (2) WO2009127658A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014519724A (ja) * 2011-05-30 2014-08-14 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子マルチ小ビーム装置
JP2020145401A (ja) * 2019-02-28 2020-09-10 株式会社東芝 マルチ電子ビーム装置

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CN102460632B (zh) 2009-05-20 2015-11-25 迈普尔平版印刷Ip有限公司 产生二级图案以供光刻处理的方法和使用该方法的图案产生器
KR20120088780A (ko) * 2009-10-26 2012-08-08 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스를 갖는 하전 입자 다중-빔렛 리소그라피 시스템
JP5636238B2 (ja) * 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI550679B (zh) * 2010-10-26 2016-09-21 瑪波微影Ｉｐ公司 調整裝置和使用其之帶電粒子多重小射束微影系統
EP2638559B1 (en) 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Charged particle beam modulator
JP6133212B2 (ja) * 2010-11-13 2017-05-24 マッパー・リソグラフィー・アイピー・ビー．ブイ． アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム
JP2012204624A (ja) * 2011-03-25 2012-10-22 Canon Inc 描画装置、および、物品の製造方法
WO2012143541A1 (en) 2011-04-20 2012-10-26 Mapper Lithography Ip B.V. Arrangement of optical fibers, and a method of forming such arrangement
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
TWI486723B (zh) 2011-04-28 2015-06-01 瑪波微影Ｉｐ公司 在微影系統中處理基板的方法
RU2013156037A (ru) 2011-05-18 2015-06-27 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Способ для разбиения изображения для использования в устройстве для многопучковой литографии
JP2013016744A (ja) 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
JP6189303B2 (ja) 2011-09-12 2017-08-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． 基板処理装置
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
US9460260B2 (en) 2014-02-21 2016-10-04 Mapper Lithography Ip B.V. Enhanced stitching by overlap dose and feature reduction
JP6262024B2 (ja) * 2014-03-04 2018-01-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
US10216087B2 (en) 2014-06-13 2019-02-26 Intel Corporation Ebeam universal cutter
US10290528B2 (en) 2014-06-13 2019-05-14 Intel Corporation Ebeam align on the fly
US9390891B2 (en) * 2014-08-15 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for charged particle lithography system
TW201618153A (zh) * 2014-09-03 2016-05-16 紐富來科技股份有限公司 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法
JP2017513036A (ja) 2014-11-14 2017-05-25 マッパー・リソグラフィー・アイピー・ビー．ブイ． 貨物固定システムおよびリソグラフィシステム内で基板を移送するための方法
KR102024614B1 (ko) * 2015-03-31 2019-09-24 후지필름 가부시키가이샤 패턴 형성 방법, 포토마스크의 제조 방법 및 전자 디바이스의 제조 방법
JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
KR102358009B1 (ko) * 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置
JP6682278B2 (ja) 2016-01-19 2020-04-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
CN110268330B (zh) * 2016-12-23 2022-01-28 Asml荷兰有限公司 一种使用无掩模光刻曝光系统制造电子器件的方法和系统
US10840056B2 (en) * 2017-02-03 2020-11-17 Kla Corporation Multi-column scanning electron microscopy system
US10176965B1 (en) 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
IL273564B2 (en) * 2017-10-02 2025-02-01 Asml Netherlands Bv Device for using charged particle beams
WO2019170421A1 (en) 2018-03-09 2019-09-12 Asml Netherlands B.V. Multi-beam inspection apparatus with improved detection performance of signal electrons
WO2019211072A1 (en) * 2018-05-01 2019-11-07 Asml Netherlands B.V. Multi-beam inspection apparatus
CN112567493B (zh) * 2018-08-09 2024-12-31 Asml荷兰有限公司 用于多个带电粒子束的装置
EP3624167A1 (en) * 2018-09-14 2020-03-18 FEI Company Multi-electron-beam imaging appartus with improved perormance
US11373838B2 (en) 2018-10-17 2022-06-28 Kla Corporation Multi-beam electron characterization tool with telecentric illumination
WO2020141041A1 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Systems and methods for real time stereo imaging using multiple electron beams
US12183543B2 (en) 2019-12-20 2024-12-31 Asml Netherlands B.V. Multi-modal operations for multi-beam inspection system
EP3893264A1 (en) 2020-04-06 2021-10-13 ASML Netherlands B.V. Charged particle assessment tool, inspection method
EP3893263A1 (en) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus
WO2021249872A1 (en) 2020-06-10 2021-12-16 Asml Netherlands B.V. Replaceable module for a charged particle apparatus
EP4268256A1 (en) * 2020-12-23 2023-11-01 ASML Netherlands B.V. Electron lens
EP4156227A1 (en) * 2021-09-27 2023-03-29 ASML Netherlands B.V. Charged particle apparatus and method
TWI856626B (zh) * 2022-05-13 2024-09-21 日商紐富來科技股份有限公司 遮沒孔徑陣列系統，帶電粒子束描繪裝置，及遮沒孔徑陣列系統的檢查方法
EP4391009A1 (en) * 2022-12-21 2024-06-26 ASML Netherlands B.V. Charged particle device and charged particle apparatus
EP4723158A1 (en) * 2024-10-02 2026-04-08 ASML Netherlands B.V. Charged particle-optical device and method of assessing

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JPH11317357A (ja) * 1998-02-24 1999-11-16 Nikon Corp 電子線描画装置及びその描画方法
WO2001035165A1 (en) * 1999-11-07 2001-05-17 Ion Diagnostics, Inc. Data path design for multiple electron beam lithography system
JP2004040076A (ja) * 2002-01-17 2004-02-05 Ims Nanofabrication Gmbh パターンを基板上に露光するマスクレス粒子ビーム装置
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JP2005129944A (ja) * 2003-10-20 2005-05-19 Ims Nanofabrication Gmbh 帯電粒子マルチビーム露光装置
JP2005322918A (ja) * 2004-04-30 2005-11-17 Ims Nanofabrication Gmbh 粒子ビーム処理のための新型のパターン画定法

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EP1830384B1 (en) 2003-05-28 2011-09-14 Mapper Lithography Ip B.V. Charged particle beamlet exposure system
JP2005032837A (ja) 2003-07-08 2005-02-03 Canon Inc 荷電粒子描画方法及び該方法を用いたデバイス製造方法
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Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH11317357A (ja) * 1998-02-24 1999-11-16 Nikon Corp 電子線描画装置及びその描画方法
WO2001035165A1 (en) * 1999-11-07 2001-05-17 Ion Diagnostics, Inc. Data path design for multiple electron beam lithography system
US20040119021A1 (en) * 1999-11-23 2004-06-24 Ion Diagnostics Electron optics for multi-beam electron beam lithography tool
JP2004040076A (ja) * 2002-01-17 2004-02-05 Ims Nanofabrication Gmbh パターンを基板上に露光するマスクレス粒子ビーム装置
JP2004282038A (ja) * 2003-02-28 2004-10-07 Canon Inc 偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置
JP2005116743A (ja) * 2003-10-07 2005-04-28 Hitachi High-Technologies Corp 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP2005129944A (ja) * 2003-10-20 2005-05-19 Ims Nanofabrication Gmbh 帯電粒子マルチビーム露光装置
JP2005322918A (ja) * 2004-04-30 2005-11-17 Ims Nanofabrication Gmbh 粒子ビーム処理のための新型のパターン画定法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014519724A (ja) * 2011-05-30 2014-08-14 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子マルチ小ビーム装置
US9607806B2 (en) 2011-05-30 2017-03-28 Mapper Lithography Ip B.V. Charged particle multi-beam apparatus including a manipulator device for manipulation of one or more charged particle beams
KR101842710B1 (ko) 2011-05-30 2018-03-28 마퍼 리쏘그라피 아이피 비.브이. 대전 입자 다중 빔릿 장치
JP2020145401A (ja) * 2019-02-28 2020-09-10 株式会社東芝 マルチ電子ビーム装置
JP7111673B2 (ja) 2019-02-28 2022-08-02 株式会社東芝 マルチ電子ビーム装置

Also Published As

Publication number Publication date
CN102067272A (zh) 2011-05-18
KR20150099617A (ko) 2015-08-31
CN102067271A (zh) 2011-05-18
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
ATE535932T1 (de) 2011-12-15
EP2402979B1 (en) 2013-10-23
CN102067272B (zh) 2014-04-30
JP2013140998A (ja) 2013-07-18
EP2279515B1 (en) 2011-11-30
JP5475155B2 (ja) 2014-04-16
EP2281296A2 (en) 2011-02-09
WO2009127658A1 (en) 2009-10-22
KR20150091417A (ko) 2015-08-10
CN102067271B (zh) 2014-05-21
JP2011517130A (ja) 2011-05-26
KR20110007199A (ko) 2011-01-21
JP2013140997A (ja) 2013-07-18
KR20110015555A (ko) 2011-02-16
TWI474360B (zh) 2015-02-21
TW201003713A (en) 2010-01-16
KR101638766B1 (ko) 2016-07-13
JP5384759B2 (ja) 2014-01-08
KR101678823B1 (ko) 2016-11-23
EP2402979A3 (en) 2012-06-27
KR101605865B1 (ko) 2016-03-24
EP2279515A1 (en) 2011-02-02
WO2009127659A2 (en) 2009-10-22
TW201003711A (en) 2010-01-16
JP5268170B2 (ja) 2013-08-21
TWI534849B (zh) 2016-05-21
EP2402979A2 (en) 2012-01-04

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