TW201003713A - Beamlet blanker arrangement - Google Patents
Beamlet blanker arrangement Download PDFInfo
- Publication number
- TW201003713A TW201003713A TW098112445A TW98112445A TW201003713A TW 201003713 A TW201003713 A TW 201003713A TW 098112445 A TW098112445 A TW 098112445A TW 98112445 A TW98112445 A TW 98112445A TW 201003713 A TW201003713 A TW 201003713A
- Authority
- TW
- Taiwan
- Prior art keywords
- array
- beamlets
- beamlet
- deflection
- deflector
- Prior art date
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4524308P | 2008-04-15 | 2008-04-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201003713A true TW201003713A (en) | 2010-01-16 |
Family
ID=40786929
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098112445A TW201003713A (en) | 2008-04-15 | 2009-04-15 | Beamlet blanker arrangement |
| TW104101464A TWI534849B (zh) | 2008-04-15 | 2009-04-15 | 投影透鏡配置 |
| TW98112444A TWI474360B (zh) | 2008-04-15 | 2009-04-15 | 投影透鏡配置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104101464A TWI534849B (zh) | 2008-04-15 | 2009-04-15 | 投影透鏡配置 |
| TW98112444A TWI474360B (zh) | 2008-04-15 | 2009-04-15 | 投影透鏡配置 |
Country Status (7)
| Country | Link |
|---|---|
| EP (3) | EP2279515B1 (enExample) |
| JP (4) | JP5268170B2 (enExample) |
| KR (4) | KR20110015555A (enExample) |
| CN (2) | CN102067272B (enExample) |
| AT (1) | ATE535932T1 (enExample) |
| TW (3) | TW201003713A (enExample) |
| WO (2) | WO2009127659A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI716439B (zh) * | 2015-11-10 | 2021-01-21 | 南韓商三星電子股份有限公司 | 束線投射裝置以及束線投射系統 |
| TWI856626B (zh) * | 2022-05-13 | 2024-09-21 | 日商紐富來科技股份有限公司 | 遮沒孔徑陣列系統，帶電粒子束描繪裝置，及遮沒孔徑陣列系統的檢查方法 |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2433294B1 (en) | 2009-05-20 | 2016-07-27 | Mapper Lithography IP B.V. | Method of generating a two-level pattern for lithographic processing and pattern generator using the same |
| CN102668015B (zh) * | 2009-10-26 | 2015-06-17 | 迈普尔平版印刷Ip有限公司 | 带电粒子多子射束光刻系统、调节装置及其制造方法 |
| JP5636238B2 (ja) * | 2010-09-22 | 2014-12-03 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| KR101725299B1 (ko) * | 2010-10-26 | 2017-04-10 | 마퍼 리쏘그라피 아이피 비.브이. | 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템 |
| WO2012062934A1 (en) | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Charged particle beam modulator |
| TWI562183B (en) * | 2010-11-13 | 2016-12-11 | Mapper Lithography Ip Bv | Aperture array element, charged particle beam generator and charged particle lithography system |
| JP2012204624A (ja) * | 2011-03-25 | 2012-10-22 | Canon Inc | 描画装置、および、物品の製造方法 |
| JP6038882B2 (ja) | 2011-04-20 | 2016-12-07 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 光ファイバの構成体及びこのような構成体を形成する方法 |
| NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| US8936994B2 (en) | 2011-04-28 | 2015-01-20 | Mapper Lithography Ip B.V. | Method of processing a substrate in a lithography system |
| TW201303524A (zh) | 2011-05-18 | 2013-01-16 | Mapper Lithography Ip Bv | 用於多子束微影設備的分裂圖案的方法 |
| NL2006868C2 (en) | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
| JP2013016744A (ja) | 2011-07-06 | 2013-01-24 | Canon Inc | 描画装置及びデバイスの製造方法 |
| JP6189303B2 (ja) | 2011-09-12 | 2017-08-30 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 基板処理装置 |
| NL2010759C2 (en) | 2012-05-14 | 2015-08-25 | Mapper Lithography Ip Bv | Modulation device and power supply arrangement. |
| US9460260B2 (en) | 2014-02-21 | 2016-10-04 | Mapper Lithography Ip B.V. | Enhanced stitching by overlap dose and feature reduction |
| JP6262024B2 (ja) * | 2014-03-04 | 2018-01-17 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置 |
| JP6677368B2 (ja) * | 2014-06-13 | 2020-04-08 | インテル・コーポレーション | 電子ビームのユニバーサルカッタ |
| CN106463347B (zh) * | 2014-06-13 | 2020-09-15 | 英特尔公司 | 即时电子束对准 |
| US9390891B2 (en) * | 2014-08-15 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for charged particle lithography system |
| TW201618153A (zh) * | 2014-09-03 | 2016-05-16 | Nuflare Technology Inc | 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法 |
| CN107111251B (zh) | 2014-11-14 | 2020-10-20 | Asml荷兰有限公司 | 用于在光刻系统中转移基材的加载锁定系统和方法 |
| WO2016158994A1 (ja) * | 2015-03-31 | 2016-10-06 | 富士フイルム株式会社 | パターン形成方法、フォトマスクの製造方法及び電子デバイスの製造方法 |
| JP2016207925A (ja) | 2015-04-27 | 2016-12-08 | 株式会社アドバンテスト | 素子、製造方法、および露光装置 |
| JP6589597B2 (ja) * | 2015-11-25 | 2019-10-16 | 株式会社ニューフレアテクノロジー | アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置 |
| JP6682278B2 (ja) | 2016-01-19 | 2020-04-15 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置 |
| KR102359084B1 (ko) * | 2016-12-23 | 2022-02-07 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조 |
| US10840056B2 (en) * | 2017-02-03 | 2020-11-17 | Kla Corporation | Multi-column scanning electron microscopy system |
| US10176965B1 (en) * | 2017-07-05 | 2019-01-08 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets |
| KR102460680B1 (ko) * | 2017-10-02 | 2022-10-28 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 빔들을 사용하는 장치 |
| IL277172B2 (en) | 2018-03-09 | 2024-07-01 | Asml Netherlands Bv | Multi-beam inspection apparatus with improved detection performance of signal electrons |
| IL277822B2 (en) * | 2018-05-01 | 2024-08-01 | Asml Netherlands Bv | Multi-beam test rig |
| JP2021532545A (ja) * | 2018-08-09 | 2021-11-25 | エーエスエムエル ネザーランズ ビー．ブイ． | 複数の荷電粒子ビームのための装置 |
| EP3624167A1 (en) * | 2018-09-14 | 2020-03-18 | FEI Company | Multi-electron-beam imaging appartus with improved perormance |
| US11373838B2 (en) * | 2018-10-17 | 2022-06-28 | Kla Corporation | Multi-beam electron characterization tool with telecentric illumination |
| WO2020141041A1 (en) * | 2018-12-31 | 2020-07-09 | Asml Netherlands B.V. | Systems and methods for real time stereo imaging using multiple electron beams |
| US10854424B2 (en) * | 2019-02-28 | 2020-12-01 | Kabushiki Kaisha Toshiba | Multi-electron beam device |
| CN114868222A (zh) * | 2019-12-20 | 2022-08-05 | Asml荷兰有限公司 | 用于多射束检查系统的多模态操作 |
| EP3893264A1 (en) * | 2020-04-06 | 2021-10-13 | ASML Netherlands B.V. | Charged particle assessment tool, inspection method |
| EP3893263A1 (en) * | 2020-04-06 | 2021-10-13 | ASML Netherlands B.V. | Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus |
| EP4165675A1 (en) | 2020-06-10 | 2023-04-19 | ASML Netherlands B.V. | Replaceable module for a charged particle apparatus |
| JP2024501655A (ja) * | 2020-12-23 | 2024-01-15 | エーエスエムエル ネザーランズ ビー．ブイ． | 電子レンズ |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI716439B (zh) * | 2015-11-10 | 2021-01-21 | 南韓商三星電子股份有限公司 | 束線投射裝置以及束線投射系統 |
| TWI856626B (zh) * | 2022-05-13 | 2024-09-21 | 日商紐富來科技股份有限公司 | 遮沒孔徑陣列系統，帶電粒子束描繪裝置，及遮沒孔徑陣列系統的檢查方法 |
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| JP2011517131A (ja) | 2011-05-26 |
| KR20110007199A (ko) | 2011-01-21 |
| EP2402979A2 (en) | 2012-01-04 |
| JP2013140998A (ja) | 2013-07-18 |
| CN102067271B (zh) | 2014-05-21 |
| KR20150091417A (ko) | 2015-08-10 |
| EP2279515B1 (en) | 2011-11-30 |
| KR20150099617A (ko) | 2015-08-31 |
| JP2013140997A (ja) | 2013-07-18 |
| EP2402979B1 (en) | 2013-10-23 |
| TW201003711A (en) | 2010-01-16 |
| JP5268170B2 (ja) | 2013-08-21 |
| WO2009127659A2 (en) | 2009-10-22 |
| KR101638766B1 (ko) | 2016-07-13 |
| EP2402979A3 (en) | 2012-06-27 |
| KR101605865B1 (ko) | 2016-03-24 |
| JP5475155B2 (ja) | 2014-04-16 |
| JP5384759B2 (ja) | 2014-01-08 |
| TWI474360B (zh) | 2015-02-21 |
| EP2279515A1 (en) | 2011-02-02 |
| CN102067271A (zh) | 2011-05-18 |
| WO2009127658A1 (en) | 2009-10-22 |
| JP2011517130A (ja) | 2011-05-26 |
| KR20110015555A (ko) | 2011-02-16 |
| KR101678823B1 (ko) | 2016-11-23 |
| CN102067272B (zh) | 2014-04-30 |
| ATE535932T1 (de) | 2011-12-15 |
| CN102067272A (zh) | 2011-05-18 |
| TW201515044A (zh) | 2015-04-16 |
| WO2009127659A3 (en) | 2009-12-10 |
| EP2281296A2 (en) | 2011-02-09 |
| TWI534849B (zh) | 2016-05-21 |
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