CN102067272B - 投影透镜装置 - Google Patents

投影透镜装置 Download PDF

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Publication number
CN102067272B
CN102067272B CN200980122616.3A CN200980122616A CN102067272B CN 102067272 B CN102067272 B CN 102067272B CN 200980122616 A CN200980122616 A CN 200980122616A CN 102067272 B CN102067272 B CN 102067272B
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China
Prior art keywords
array
beamlets
son
apertures
projection lens
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CN200980122616.3A
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English (en)
Chinese (zh)
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CN102067272A (zh
Inventor
M·J-J·威兰
亚历山大·H·V·范维恩
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ASML Netherlands BV
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Mapper Lithopraphy IP BV
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Publication of CN102067272A publication Critical patent/CN102067272A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electron Beam Exposure (AREA)
CN200980122616.3A 2008-04-15 2009-04-15 投影透镜装置 Active CN102067272B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15
US61/045,243 2008-04-15
PCT/EP2009/054467 WO2009127658A1 (en) 2008-04-15 2009-04-15 Projection lens arrangement

Publications (2)

Publication Number Publication Date
CN102067272A CN102067272A (zh) 2011-05-18
CN102067272B true CN102067272B (zh) 2014-04-30

Family

ID=40786929

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200980122616.3A Active CN102067272B (zh) 2008-04-15 2009-04-15 投影透镜装置
CN200980122615.9A Expired - Fee Related CN102067271B (zh) 2008-04-15 2009-04-15 子束阻断器装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200980122615.9A Expired - Fee Related CN102067271B (zh) 2008-04-15 2009-04-15 子束阻断器装置

Country Status (7)

Country Link
EP (3) EP2279515B1 (enExample)
JP (4) JP5268170B2 (enExample)
KR (4) KR20110015555A (enExample)
CN (2) CN102067272B (enExample)
AT (1) ATE535932T1 (enExample)
TW (3) TW201003713A (enExample)
WO (2) WO2009127659A2 (enExample)

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JP5636238B2 (ja) * 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
KR101725299B1 (ko) * 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템
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JP2012204624A (ja) * 2011-03-25 2012-10-22 Canon Inc 描画装置、および、物品の製造方法
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US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
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CN107111251B (zh) 2014-11-14 2020-10-20 Asml荷兰有限公司 用于在光刻系统中转移基材的加载锁定系统和方法
WO2016158994A1 (ja) * 2015-03-31 2016-10-06 富士フイルム株式会社 パターン形成方法、フォトマスクの製造方法及び電子デバイスの製造方法
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KR102358009B1 (ko) * 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置
JP6682278B2 (ja) 2016-01-19 2020-04-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
KR102359084B1 (ko) * 2016-12-23 2022-02-07 에이에스엠엘 네델란즈 비.브이. 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조
US10840056B2 (en) * 2017-02-03 2020-11-17 Kla Corporation Multi-column scanning electron microscopy system
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KR102460680B1 (ko) * 2017-10-02 2022-10-28 에이에스엠엘 네델란즈 비.브이. 하전 입자 빔들을 사용하는 장치
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JP2021532545A (ja) * 2018-08-09 2021-11-25 エーエスエムエル ネザーランズ ビー．ブイ． 複数の荷電粒子ビームのための装置
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Also Published As

Publication number Publication date
TW201003713A (en) 2010-01-16
JP2011517131A (ja) 2011-05-26
KR20110007199A (ko) 2011-01-21
EP2402979A2 (en) 2012-01-04
JP2013140998A (ja) 2013-07-18
CN102067271B (zh) 2014-05-21
KR20150091417A (ko) 2015-08-10
EP2279515B1 (en) 2011-11-30
KR20150099617A (ko) 2015-08-31
JP2013140997A (ja) 2013-07-18
EP2402979B1 (en) 2013-10-23
TW201003711A (en) 2010-01-16
JP5268170B2 (ja) 2013-08-21
WO2009127659A2 (en) 2009-10-22
KR101638766B1 (ko) 2016-07-13
EP2402979A3 (en) 2012-06-27
KR101605865B1 (ko) 2016-03-24
JP5475155B2 (ja) 2014-04-16
JP5384759B2 (ja) 2014-01-08
TWI474360B (zh) 2015-02-21
EP2279515A1 (en) 2011-02-02
CN102067271A (zh) 2011-05-18
WO2009127658A1 (en) 2009-10-22
JP2011517130A (ja) 2011-05-26
KR20110015555A (ko) 2011-02-16
KR101678823B1 (ko) 2016-11-23
ATE535932T1 (de) 2011-12-15
CN102067272A (zh) 2011-05-18
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
EP2281296A2 (en) 2011-02-09
TWI534849B (zh) 2016-05-21

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C53 Correction of patent of invention or patent application
CB03 Change of inventor or designer information

Inventor after: M * J-J * Weilan

Inventor after: Alexander H. V Van Wien

Inventor before: Wieland Jan Jaco

Inventor before: Van Veen Alexander Hendrik Vincent

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Free format text: CORRECT: INVENTOR; FROM: JACO WIELAND JAN VIN VEEN ALEXANDER HENDRIK VAN TO: JAN-JACO WIELAND MARCO VIN VEEN ALEXANDER HENDRIK VAN

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Effective date of registration: 20190428

Address after: Holland Weide Eindhoven

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Patentee before: Mapper Lithography IP B. V.