ATE535932T1 - Projektionslinsenanordnung - Google Patents
ProjektionslinsenanordnungInfo
- Publication number
- ATE535932T1 ATE535932T1 AT09733141T AT09733141T ATE535932T1 AT E535932 T1 ATE535932 T1 AT E535932T1 AT 09733141 T AT09733141 T AT 09733141T AT 09733141 T AT09733141 T AT 09733141T AT E535932 T1 ATE535932 T1 AT E535932T1
- Authority
- AT
- Austria
- Prior art keywords
- sub
- beamlets
- charged particle
- beamlet
- beams
- Prior art date
Links
- 239000002245 particle Substances 0.000 abstract 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4524308P | 2008-04-15 | 2008-04-15 | |
| PCT/EP2009/054467 WO2009127658A1 (en) | 2008-04-15 | 2009-04-15 | Projection lens arrangement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE535932T1 true ATE535932T1 (de) | 2011-12-15 |
Family
ID=40786929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09733141T ATE535932T1 (de) | 2008-04-15 | 2009-04-15 | Projektionslinsenanordnung |
Country Status (7)
| Country | Link |
|---|---|
| EP (3) | EP2279515B1 (enExample) |
| JP (4) | JP5268170B2 (enExample) |
| KR (4) | KR20110015555A (enExample) |
| CN (2) | CN102067272B (enExample) |
| AT (1) | ATE535932T1 (enExample) |
| TW (3) | TW201003713A (enExample) |
| WO (2) | WO2009127659A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2433294B1 (en) | 2009-05-20 | 2016-07-27 | Mapper Lithography IP B.V. | Method of generating a two-level pattern for lithographic processing and pattern generator using the same |
| CN102668015B (zh) * | 2009-10-26 | 2015-06-17 | 迈普尔平版印刷Ip有限公司 | 带电粒子多子射束光刻系统、调节装置及其制造方法 |
| JP5636238B2 (ja) * | 2010-09-22 | 2014-12-03 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| KR101725299B1 (ko) * | 2010-10-26 | 2017-04-10 | 마퍼 리쏘그라피 아이피 비.브이. | 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템 |
| WO2012062934A1 (en) | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Charged particle beam modulator |
| TWI562183B (en) * | 2010-11-13 | 2016-12-11 | Mapper Lithography Ip Bv | Aperture array element, charged particle beam generator and charged particle lithography system |
| JP2012204624A (ja) * | 2011-03-25 | 2012-10-22 | Canon Inc | 描画装置、および、物品の製造方法 |
| JP6038882B2 (ja) | 2011-04-20 | 2016-12-07 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 光ファイバの構成体及びこのような構成体を形成する方法 |
| NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| US8936994B2 (en) | 2011-04-28 | 2015-01-20 | Mapper Lithography Ip B.V. | Method of processing a substrate in a lithography system |
| TW201303524A (zh) | 2011-05-18 | 2013-01-16 | Mapper Lithography Ip Bv | 用於多子束微影設備的分裂圖案的方法 |
| NL2006868C2 (en) | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
| JP2013016744A (ja) | 2011-07-06 | 2013-01-24 | Canon Inc | 描画装置及びデバイスの製造方法 |
| JP6189303B2 (ja) | 2011-09-12 | 2017-08-30 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 基板処理装置 |
| NL2010759C2 (en) | 2012-05-14 | 2015-08-25 | Mapper Lithography Ip Bv | Modulation device and power supply arrangement. |
| US9460260B2 (en) | 2014-02-21 | 2016-10-04 | Mapper Lithography Ip B.V. | Enhanced stitching by overlap dose and feature reduction |
| JP6262024B2 (ja) * | 2014-03-04 | 2018-01-17 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置 |
| JP6677368B2 (ja) * | 2014-06-13 | 2020-04-08 | インテル・コーポレーション | 電子ビームのユニバーサルカッタ |
| CN106463347B (zh) * | 2014-06-13 | 2020-09-15 | 英特尔公司 | 即时电子束对准 |
| US9390891B2 (en) * | 2014-08-15 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for charged particle lithography system |
| TW201618153A (zh) * | 2014-09-03 | 2016-05-16 | Nuflare Technology Inc | 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法 |
| CN107111251B (zh) | 2014-11-14 | 2020-10-20 | Asml荷兰有限公司 | 用于在光刻系统中转移基材的加载锁定系统和方法 |
| WO2016158994A1 (ja) * | 2015-03-31 | 2016-10-06 | 富士フイルム株式会社 | パターン形成方法、フォトマスクの製造方法及び電子デバイスの製造方法 |
| JP2016207925A (ja) | 2015-04-27 | 2016-12-08 | 株式会社アドバンテスト | 素子、製造方法、および露光装置 |
| KR102358009B1 (ko) * | 2015-11-10 | 2022-02-04 | 삼성전자주식회사 | 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법 |
| JP6589597B2 (ja) * | 2015-11-25 | 2019-10-16 | 株式会社ニューフレアテクノロジー | アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置 |
| JP6682278B2 (ja) | 2016-01-19 | 2020-04-15 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置 |
| KR102359084B1 (ko) * | 2016-12-23 | 2022-02-07 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조 |
| US10840056B2 (en) * | 2017-02-03 | 2020-11-17 | Kla Corporation | Multi-column scanning electron microscopy system |
| US10176965B1 (en) * | 2017-07-05 | 2019-01-08 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets |
| KR102460680B1 (ko) * | 2017-10-02 | 2022-10-28 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 빔들을 사용하는 장치 |
| IL277172B2 (en) | 2018-03-09 | 2024-07-01 | Asml Netherlands Bv | Multi-beam inspection apparatus with improved detection performance of signal electrons |
| IL277822B2 (en) * | 2018-05-01 | 2024-08-01 | Asml Netherlands Bv | Multi-beam test rig |
| JP2021532545A (ja) * | 2018-08-09 | 2021-11-25 | エーエスエムエル ネザーランズ ビー．ブイ． | 複数の荷電粒子ビームのための装置 |
| EP3624167A1 (en) * | 2018-09-14 | 2020-03-18 | FEI Company | Multi-electron-beam imaging appartus with improved perormance |
| US11373838B2 (en) * | 2018-10-17 | 2022-06-28 | Kla Corporation | Multi-beam electron characterization tool with telecentric illumination |
| WO2020141041A1 (en) * | 2018-12-31 | 2020-07-09 | Asml Netherlands B.V. | Systems and methods for real time stereo imaging using multiple electron beams |
| US10854424B2 (en) * | 2019-02-28 | 2020-12-01 | Kabushiki Kaisha Toshiba | Multi-electron beam device |
| CN114868222A (zh) * | 2019-12-20 | 2022-08-05 | Asml荷兰有限公司 | 用于多射束检查系统的多模态操作 |
| EP3893264A1 (en) * | 2020-04-06 | 2021-10-13 | ASML Netherlands B.V. | Charged particle assessment tool, inspection method |
| EP3893263A1 (en) * | 2020-04-06 | 2021-10-13 | ASML Netherlands B.V. | Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus |
| EP4165675A1 (en) | 2020-06-10 | 2023-04-19 | ASML Netherlands B.V. | Replaceable module for a charged particle apparatus |
| JP2024501655A (ja) * | 2020-12-23 | 2024-01-15 | エーエスエムエル ネザーランズ ビー．ブイ． | 電子レンズ |
| EP4156227A1 (en) * | 2021-09-27 | 2023-03-29 | ASML Netherlands B.V. | Charged particle apparatus and method |
| TWI856626B (zh) * | 2022-05-13 | 2024-09-21 | 日商紐富來科技股份有限公司 | 遮沒孔徑陣列系統，帶電粒子束描繪裝置，及遮沒孔徑陣列系統的檢查方法 |
| EP4391009A1 (en) * | 2022-12-21 | 2024-06-26 | ASML Netherlands B.V. | Charged particle device and charged particle apparatus |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3796317B2 (ja) | 1996-06-12 | 2006-07-12 | キヤノン株式会社 | 電子ビーム露光方法及びそれを用いたデバイス製造方法 |
| US6014200A (en) * | 1998-02-24 | 2000-01-11 | Nikon Corporation | High throughput electron beam lithography system |
| WO2001035165A1 (en) * | 1999-11-07 | 2001-05-17 | Ion Diagnostics, Inc. | Data path design for multiple electron beam lithography system |
| AU1926501A (en) * | 1999-11-23 | 2001-06-04 | Ion Diagnostics, Inc. | Electron optics for multi-beam electron beam lithography tool |
| JP2001168016A (ja) | 1999-12-13 | 2001-06-22 | Canon Inc | 荷電粒子線露光装置と露光システム及びそれらの制御方法及びデバイス製造方法 |
| US6768125B2 (en) * | 2002-01-17 | 2004-07-27 | Ims Nanofabrication, Gmbh | Maskless particle-beam system for exposing a pattern on a substrate |
| KR101060557B1 (ko) | 2002-10-25 | 2011-08-31 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그라피 시스템 |
| KR101077098B1 (ko) | 2002-10-30 | 2011-10-26 | 마퍼 리쏘그라피 아이피 비.브이. | 전자 빔 노출 시스템 |
| JP2004282038A (ja) * | 2003-02-28 | 2004-10-07 | Canon Inc | 偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置 |
| KR101068607B1 (ko) | 2003-03-10 | 2011-09-30 | 마퍼 리쏘그라피 아이피 비.브이. | 복수 개의 빔렛 발생 장치 |
| JP4949843B2 (ja) | 2003-05-28 | 2012-06-13 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 荷電粒子ビームレット露光システム |
| JP2005032837A (ja) * | 2003-07-08 | 2005-02-03 | Canon Inc | 荷電粒子描画方法及び該方法を用いたデバイス製造方法 |
| JP4313145B2 (ja) * | 2003-10-07 | 2009-08-12 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
| GB2408143B (en) * | 2003-10-20 | 2006-11-15 | Ims Nanofabrication Gmbh | Charged-particle multi-beam exposure apparatus |
| GB2414111B (en) * | 2004-04-30 | 2010-01-27 | Ims Nanofabrication Gmbh | Advanced pattern definition for particle-beam processing |
| JP2008026695A (ja) * | 2006-07-24 | 2008-02-07 | Ushio Inc | 投影露光装置 |
-
2009
- 2009-04-15 EP EP09733141A patent/EP2279515B1/en active Active
- 2009-04-15 KR KR1020107025645A patent/KR20110015555A/ko not_active Withdrawn
- 2009-04-15 WO PCT/EP2009/054468 patent/WO2009127659A2/en not_active Ceased
- 2009-04-15 EP EP09732178A patent/EP2281296A2/en not_active Withdrawn
- 2009-04-15 JP JP2011504449A patent/JP5268170B2/ja active Active
- 2009-04-15 KR KR1020157021939A patent/KR101678823B1/ko active Active
- 2009-04-15 EP EP11183370.3A patent/EP2402979B1/en active Active
- 2009-04-15 WO PCT/EP2009/054467 patent/WO2009127658A1/en not_active Ceased
- 2009-04-15 KR KR1020107025644A patent/KR101605865B1/ko active Active
- 2009-04-15 AT AT09733141T patent/ATE535932T1/de active
- 2009-04-15 JP JP2011504450A patent/JP2011517131A/ja active Pending
- 2009-04-15 CN CN200980122616.3A patent/CN102067272B/zh active Active
- 2009-04-15 KR KR1020157020023A patent/KR101638766B1/ko active Active
- 2009-04-15 CN CN200980122615.9A patent/CN102067271B/zh not_active Expired - Fee Related
- 2009-04-15 TW TW098112445A patent/TW201003713A/zh unknown
- 2009-04-15 TW TW104101464A patent/TWI534849B/zh active
- 2009-04-15 TW TW98112444A patent/TWI474360B/zh active
-
2013
- 2013-02-12 JP JP2013024809A patent/JP5384759B2/ja active Active
- 2013-02-12 JP JP2013024799A patent/JP5475155B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201003713A (en) | 2010-01-16 |
| JP2011517131A (ja) | 2011-05-26 |
| KR20110007199A (ko) | 2011-01-21 |
| EP2402979A2 (en) | 2012-01-04 |
| JP2013140998A (ja) | 2013-07-18 |
| CN102067271B (zh) | 2014-05-21 |
| KR20150091417A (ko) | 2015-08-10 |
| EP2279515B1 (en) | 2011-11-30 |
| KR20150099617A (ko) | 2015-08-31 |
| JP2013140997A (ja) | 2013-07-18 |
| EP2402979B1 (en) | 2013-10-23 |
| TW201003711A (en) | 2010-01-16 |
| JP5268170B2 (ja) | 2013-08-21 |
| WO2009127659A2 (en) | 2009-10-22 |
| KR101638766B1 (ko) | 2016-07-13 |
| EP2402979A3 (en) | 2012-06-27 |
| KR101605865B1 (ko) | 2016-03-24 |
| JP5475155B2 (ja) | 2014-04-16 |
| JP5384759B2 (ja) | 2014-01-08 |
| TWI474360B (zh) | 2015-02-21 |
| EP2279515A1 (en) | 2011-02-02 |
| CN102067271A (zh) | 2011-05-18 |
| WO2009127658A1 (en) | 2009-10-22 |
| JP2011517130A (ja) | 2011-05-26 |
| KR20110015555A (ko) | 2011-02-16 |
| KR101678823B1 (ko) | 2016-11-23 |
| CN102067272B (zh) | 2014-04-30 |
| CN102067272A (zh) | 2011-05-18 |
| TW201515044A (zh) | 2015-04-16 |
| WO2009127659A3 (en) | 2009-12-10 |
| EP2281296A2 (en) | 2011-02-09 |
| TWI534849B (zh) | 2016-05-21 |
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