KR101638766B1 - 비임렛 블랭커 배열체 - Google Patents

비임렛 블랭커 배열체 Download PDF

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Publication number
KR101638766B1
KR101638766B1 KR1020157020023A KR20157020023A KR101638766B1 KR 101638766 B1 KR101638766 B1 KR 101638766B1 KR 1020157020023 A KR1020157020023 A KR 1020157020023A KR 20157020023 A KR20157020023 A KR 20157020023A KR 101638766 B1 KR101638766 B1 KR 101638766B1
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South Korea
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array
delete delete
beamlet
deflector
charged particle
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Korean (ko)
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KR20150091417A (ko
Inventor
얀 자코 윌랜드
알렉산더 헨드릭 빈센트 반 빈
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마퍼 리쏘그라피 아이피 비.브이.
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Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • H01L21/0275—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
KR1020157020023A 2008-04-15 2009-04-15 비임렛 블랭커 배열체 Active KR101638766B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15
US61/045,243 2008-04-15
PCT/EP2009/054468 WO2009127659A2 (en) 2008-04-15 2009-04-15 Beamlet blanker arrangement

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020107025645A Division KR20110015555A (ko) 2008-04-15 2009-04-15 비임렛 블랭커 배열체

Publications (2)

Publication Number Publication Date
KR20150091417A KR20150091417A (ko) 2015-08-10
KR101638766B1 true KR101638766B1 (ko) 2016-07-13

Family

ID=40786929

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020157020023A Active KR101638766B1 (ko) 2008-04-15 2009-04-15 비임렛 블랭커 배열체
KR1020107025645A Withdrawn KR20110015555A (ko) 2008-04-15 2009-04-15 비임렛 블랭커 배열체
KR1020107025644A Active KR101605865B1 (ko) 2008-04-15 2009-04-15 투사 렌즈 배열체
KR1020157021939A Active KR101678823B1 (ko) 2008-04-15 2009-04-15 투사 렌즈 배열체

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020107025645A Withdrawn KR20110015555A (ko) 2008-04-15 2009-04-15 비임렛 블랭커 배열체
KR1020107025644A Active KR101605865B1 (ko) 2008-04-15 2009-04-15 투사 렌즈 배열체
KR1020157021939A Active KR101678823B1 (ko) 2008-04-15 2009-04-15 투사 렌즈 배열체

Country Status (7)

Country Link
EP (3) EP2402979B1 (enExample)
JP (4) JP2011517131A (enExample)
KR (4) KR101638766B1 (enExample)
CN (2) CN102067272B (enExample)
AT (1) ATE535932T1 (enExample)
TW (3) TW201003713A (enExample)
WO (2) WO2009127658A1 (enExample)

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JP5636238B2 (ja) * 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI550679B (zh) * 2010-10-26 2016-09-21 瑪波微影Ｉｐ公司 調整裝置和使用其之帶電粒子多重小射束微影系統
EP2638559B1 (en) 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Charged particle beam modulator
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JP2012204624A (ja) * 2011-03-25 2012-10-22 Canon Inc 描画装置、および、物品の製造方法
WO2012143541A1 (en) 2011-04-20 2012-10-26 Mapper Lithography Ip B.V. Arrangement of optical fibers, and a method of forming such arrangement
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TWI486723B (zh) 2011-04-28 2015-06-01 瑪波微影Ｉｐ公司 在微影系統中處理基板的方法
RU2013156037A (ru) 2011-05-18 2015-06-27 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Способ для разбиения изображения для использования в устройстве для многопучковой литографии
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US9460260B2 (en) 2014-02-21 2016-10-04 Mapper Lithography Ip B.V. Enhanced stitching by overlap dose and feature reduction
JP6262024B2 (ja) * 2014-03-04 2018-01-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
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US9390891B2 (en) * 2014-08-15 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for charged particle lithography system
TW201618153A (zh) * 2014-09-03 2016-05-16 紐富來科技股份有限公司 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法
JP2017513036A (ja) 2014-11-14 2017-05-25 マッパー・リソグラフィー・アイピー・ビー．ブイ． 貨物固定システムおよびリソグラフィシステム内で基板を移送するための方法
KR102024614B1 (ko) * 2015-03-31 2019-09-24 후지필름 가부시키가이샤 패턴 형성 방법, 포토마스크의 제조 방법 및 전자 디바이스의 제조 방법
JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
KR102358009B1 (ko) * 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置
JP6682278B2 (ja) 2016-01-19 2020-04-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
CN110268330B (zh) * 2016-12-23 2022-01-28 Asml荷兰有限公司 一种使用无掩模光刻曝光系统制造电子器件的方法和系统
US10840056B2 (en) * 2017-02-03 2020-11-17 Kla Corporation Multi-column scanning electron microscopy system
US10176965B1 (en) 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
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WO2019170421A1 (en) 2018-03-09 2019-09-12 Asml Netherlands B.V. Multi-beam inspection apparatus with improved detection performance of signal electrons
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CN112567493B (zh) * 2018-08-09 2024-12-31 Asml荷兰有限公司 用于多个带电粒子束的装置
EP3624167A1 (en) * 2018-09-14 2020-03-18 FEI Company Multi-electron-beam imaging appartus with improved perormance
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EP3893264A1 (en) 2020-04-06 2021-10-13 ASML Netherlands B.V. Charged particle assessment tool, inspection method
EP3893263A1 (en) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus
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Also Published As

Publication number Publication date
CN102067272A (zh) 2011-05-18
KR20150099617A (ko) 2015-08-31
CN102067271A (zh) 2011-05-18
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
ATE535932T1 (de) 2011-12-15
EP2402979B1 (en) 2013-10-23
CN102067272B (zh) 2014-04-30
JP2013140998A (ja) 2013-07-18
EP2279515B1 (en) 2011-11-30
JP5475155B2 (ja) 2014-04-16
EP2281296A2 (en) 2011-02-09
WO2009127658A1 (en) 2009-10-22
KR20150091417A (ko) 2015-08-10
CN102067271B (zh) 2014-05-21
JP2011517130A (ja) 2011-05-26
KR20110007199A (ko) 2011-01-21
JP2013140997A (ja) 2013-07-18
JP2011517131A (ja) 2011-05-26
KR20110015555A (ko) 2011-02-16
TWI474360B (zh) 2015-02-21
TW201003713A (en) 2010-01-16
JP5384759B2 (ja) 2014-01-08
KR101678823B1 (ko) 2016-11-23
EP2402979A3 (en) 2012-06-27
KR101605865B1 (ko) 2016-03-24
EP2279515A1 (en) 2011-02-02
WO2009127659A2 (en) 2009-10-22
TW201003711A (en) 2010-01-16
JP5268170B2 (ja) 2013-08-21
TWI534849B (zh) 2016-05-21
EP2402979A2 (en) 2012-01-04

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St.27 status event code: A-4-4-P10-P22-nap-X000