JP2011515650A - Ｅｕｖ光源構成要素及びその製造、使用及び修復方法 - Google Patents

Ｅｕｖ光源構成要素及びその製造、使用及び修復方法 Download PDF

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Publication number
JP2011515650A
JP2011515650A JP2010539427A JP2010539427A JP2011515650A JP 2011515650 A JP2011515650 A JP 2011515650A JP 2010539427 A JP2010539427 A JP 2010539427A JP 2010539427 A JP2010539427 A JP 2010539427A JP 2011515650 A JP2011515650 A JP 2011515650A
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Prior art keywords
mirror
euv
coating
zone
multilayer
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JP2010539427A
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Japanese (ja)
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JP2011515650A5 (enExample
Inventor
ノルベルト エル ボーヴェリンク
アレクサンダー エヌ ビカノフ
オリー ヴィー コーディキン
イゴー ヴィー フォーメンコフ
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サイマー インコーポレイテッド
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Optical Filters (AREA)
  • X-Ray Techniques (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2010539427A 2007-12-20 2008-12-05 Ｅｕｖ光源構成要素及びその製造、使用及び修復方法 Pending JP2011515650A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/004,871 US7960701B2 (en) 2007-12-20 2007-12-20 EUV light source components and methods for producing, using and refurbishing same
US12/004,871 2007-12-20
PCT/US2008/013416 WO2009085094A2 (en) 2007-12-20 2008-12-05 Euv light source components and methods for producing, using and refurbishing same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015027621A Division JP6013528B2 (ja) 2007-12-20 2015-02-16 Ｅｕｖ光源構成要素及びその製造、使用及び修復方法

Publications (2)

Publication Number Publication Date
JP2011515650A true JP2011515650A (ja) 2011-05-19
JP2011515650A5 JP2011515650A5 (enExample) 2012-01-26

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JP2010539427A Pending JP2011515650A (ja) 2007-12-20 2008-12-05 Ｅｕｖ光源構成要素及びその製造、使用及び修復方法
JP2015027621A Active JP6013528B2 (ja) 2007-12-20 2015-02-16 Ｅｕｖ光源構成要素及びその製造、使用及び修復方法

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Country Status (5)

Country Link
US (3) US7960701B2 (enExample)
EP (1) EP2232210A2 (enExample)
JP (2) JP2011515650A (enExample)
TW (1) TWI404461B (enExample)
WO (1) WO2009085094A2 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016514288A (ja) * 2013-03-12 2016-05-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 平坦化された極端紫外線リソグラフィブランク及びそのための製造及びリソグラフィシステム
WO2016151682A1 (ja) * 2015-03-20 2016-09-29 国立大学法人 東京大学 Ｅｕｖ光用回転楕円体ミラーの反射率計測装置
JPWO2015125964A1 (ja) * 2014-02-24 2017-03-30 株式会社ニコン 多層膜反射鏡及びその製造方法、並びに露光装置
US9857690B2 (en) 2015-08-28 2018-01-02 Samsung Electronics Co., Ltd. Extreme ultraviolet generation device and exposure system including the same
WO2019043773A1 (ja) * 2017-08-29 2019-03-07 ギガフォトン株式会社 極端紫外光生成装置
WO2024166185A1 (ja) * 2023-02-06 2024-08-15 ギガフォトン株式会社 劣化推定方法、レーザ装置及び電子デバイスの製造方法
JP2025080300A (ja) * 2023-11-14 2025-05-26 レーザーテック株式会社 光学装置及び光学装置の制御方法

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US8018578B2 (en) * 2007-04-19 2011-09-13 Asml Netherlands B.V. Pellicle, lithographic apparatus and device manufacturing method
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TWI475330B (zh) 2010-07-30 2015-03-01 卡爾蔡司Ｓｍｔ有限公司 超紫外線曝光裝置
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US20160033879A1 (en) * 2014-07-30 2016-02-04 GlobalFoundries, Inc. Methods and controllers for controlling focus of ultraviolet light from a lithographic imaging system, and apparatuses for forming an integrated circuit employing the same
DE102014218087A1 (de) * 2014-09-10 2015-10-22 Carl Zeiss Smt Gmbh Anordnung und Verfahren zur Überwachung des Kontaminationszustandes eines Spiegels einer mikrolithographischen Projektionsbelichtungsanlage
KR102369935B1 (ko) 2015-08-31 2022-03-03 삼성전자주식회사 드립 홀을 갖는 콜렉팅 미러를 포함하는 euv 광 발생 장치
JP6506153B2 (ja) * 2015-10-27 2019-04-24 株式会社Ｓｃｒｅｅｎホールディングス 変位検出装置および変位検出方法ならびに基板処理装置
WO2017130346A1 (ja) * 2016-01-28 2017-08-03 ギガフォトン株式会社 極端紫外光生成装置
JP6751138B2 (ja) * 2016-04-27 2020-09-02 ギガフォトン株式会社 極端紫外光センサユニット及び極端紫外光生成装置
EP3532796A1 (en) * 2016-10-25 2019-09-04 trinamiX GmbH Nfrared optical detector with integrated filter
KR102775472B1 (ko) * 2018-04-26 2025-02-28 에이에스엠엘 네델란즈 비.브이. 컬렉터 미러 등의 미러를 테스트하기 위한 시스템 및 컬렉터 미러 등의 미러를 테스트하는 방법
JP7731247B2 (ja) * 2021-09-08 2025-08-29 ギガフォトン株式会社 極端紫外光生成装置、及び電子デバイスの製造方法
KR20230048212A (ko) * 2021-10-01 2023-04-11 삼성전자주식회사 Euv 컬렉터 검사 장치 및 검사 방법

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US8314398B2 (en) 2012-11-20
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