JP2013526044A5 - - Google Patents
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- Publication number
- JP2013526044A5 JP2013526044A5 JP2013506551A JP2013506551A JP2013526044A5 JP 2013526044 A5 JP2013526044 A5 JP 2013526044A5 JP 2013506551 A JP2013506551 A JP 2013506551A JP 2013506551 A JP2013506551 A JP 2013506551A JP 2013526044 A5 JP2013526044 A5 JP 2013526044A5
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- spectral purity
- purity filter
- wavelength
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 claims description 333
- 230000003595 spectral effect Effects 0.000 claims description 329
- 239000000463 material Substances 0.000 claims description 188
- 229910052750 molybdenum Inorganic materials 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 47
- 229910052721 tungsten Inorganic materials 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 43
- 239000002245 particle Substances 0.000 claims description 38
- 239000002105 nanoparticle Substances 0.000 claims description 37
- 229910045601 alloy Inorganic materials 0.000 claims description 32
- 239000000956 alloy Substances 0.000 claims description 32
- 238000002310 reflectometry Methods 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 229910052702 rhenium Inorganic materials 0.000 claims description 23
- 238000001953 recrystallisation Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 19
- 229910052741 iridium Inorganic materials 0.000 claims description 13
- 229910052758 niobium Inorganic materials 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 229910052703 rhodium Inorganic materials 0.000 claims description 12
- 229910021332 silicide Inorganic materials 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 238000001459 lithography Methods 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 61
- 229910000691 Re alloy Inorganic materials 0.000 description 38
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 36
- 239000010937 tungsten Substances 0.000 description 36
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 35
- 239000011733 molybdenum Substances 0.000 description 35
- 238000000059 patterning Methods 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 238000001228 spectrum Methods 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 16
- YUSUJSHEOICGOO-UHFFFAOYSA-N molybdenum rhenium Chemical compound [Mo].[Mo].[Re].[Re].[Re] YUSUJSHEOICGOO-UHFFFAOYSA-N 0.000 description 15
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 14
- 238000000576 coating method Methods 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 238000005286 illumination Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910001182 Mo alloy Inorganic materials 0.000 description 10
- XWHXQUBZGDADCU-UHFFFAOYSA-N [Mo].[W].[Re] Chemical compound [Mo].[W].[Re] XWHXQUBZGDADCU-UHFFFAOYSA-N 0.000 description 10
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 230000036961 partial effect Effects 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 7
- -1 Ce 2 O 3 Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000000446 fuel Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000032798 delamination Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 101000805921 Strongylocentrotus purpuratus Upstream stimulatory factor Proteins 0.000 description 2
- 101000671634 Xenopus borealis Upstream stimulatory factor 1 Proteins 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32842610P | 2010-04-27 | 2010-04-27 | |
| US61/328,426 | 2010-04-27 | ||
| PCT/EP2011/052573 WO2011134692A1 (en) | 2010-04-27 | 2011-02-22 | Spectral purity filter |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013526044A JP2013526044A (ja) | 2013-06-20 |
| JP2013526044A5 true JP2013526044A5 (enExample) | 2014-04-10 |
| JP5727590B2 JP5727590B2 (ja) | 2015-06-03 |
Family
ID=43837934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013506551A Active JP5727590B2 (ja) | 2010-04-27 | 2011-02-22 | スペクトル純度フィルタ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9726989B2 (enExample) |
| EP (1) | EP2564273A1 (enExample) |
| JP (1) | JP5727590B2 (enExample) |
| KR (1) | KR101776829B1 (enExample) |
| CN (1) | CN102859444B (enExample) |
| SG (1) | SG184557A1 (enExample) |
| TW (1) | TWI528117B (enExample) |
| WO (1) | WO2011134692A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101797052B1 (ko) * | 2010-02-12 | 2017-11-13 | 에이에스엠엘 네델란즈 비.브이. | 스펙트럼 퓨리티 필터 |
| US9407997B2 (en) * | 2010-10-12 | 2016-08-02 | Invensense, Inc. | Microphone package with embedded ASIC |
| TWI596384B (zh) * | 2012-01-18 | 2017-08-21 | Ａｓｍｌ荷蘭公司 | 光源收集器元件、微影裝置及元件製造方法 |
| DE102012215698A1 (de) * | 2012-09-05 | 2013-08-29 | Carl Zeiss Smt Gmbh | Überwachungseinrichtung für eine Projektonsbelichtungsanlage und Verfahren zu deren Betrieb |
| DE102012216502A1 (de) * | 2012-09-17 | 2014-03-20 | Carl Zeiss Smt Gmbh | Spiegel |
| US9244368B2 (en) | 2012-09-26 | 2016-01-26 | Kla-Tencor Corporation | Particle control near reticle and optics using showerhead |
| DE102013213842A1 (de) * | 2013-07-16 | 2015-01-22 | Carl Zeiss Smt Gmbh | Optisches Bauelement |
| NL2013700A (en) * | 2013-11-25 | 2015-05-27 | Asml Netherlands Bv | An apparatus, a device and a device manufacturing method. |
| KR102650131B1 (ko) * | 2014-07-04 | 2024-03-21 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 내에서 사용하는 멤브레인 및 이러한 멤브레인을 포함한 리소그래피 장치 |
| US9664907B2 (en) * | 2014-07-21 | 2017-05-30 | Applied Materials Israel Ltd. | Optical element for spatial beam shaping |
| CN105573065B (zh) * | 2015-12-21 | 2017-12-26 | 中国科学院长春光学精密机械与物理研究所 | 用于极紫外光刻装置中的锆膜置换机构 |
| CN119575749A (zh) | 2018-10-15 | 2025-03-07 | Asml荷兰有限公司 | 制造隔膜组件的方法 |
| CN117999857A (zh) * | 2021-09-15 | 2024-05-07 | Asml荷兰有限公司 | 用于主动加热euv光源中的基板的装置和方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6014251A (en) * | 1997-04-08 | 2000-01-11 | The United States Of America As Represented By The Secretary Of The Navy | Optical filters based on uniform arrays of metallic waveguides |
| US5973316A (en) | 1997-07-08 | 1999-10-26 | Nec Research Institute, Inc. | Sub-wavelength aperture arrays with enhanced light transmission |
| GB0108129D0 (en) | 2001-03-31 | 2001-05-23 | Bookham Technology Plc | Optoelectronic filters |
| DE10127537C1 (de) | 2001-05-31 | 2002-11-14 | Apsys Advanced Particle System | Trägersubstrat für die Abscheidung, automatisierte Erkennung und spektroskopische Identifizierung von Partikeln |
| US6522465B1 (en) * | 2001-09-27 | 2003-02-18 | Intel Corporation | Transmitting spectral filtering of high power extreme ultra-violet radiation |
| JP4229103B2 (ja) * | 2001-10-29 | 2009-02-25 | 住友電気工業株式会社 | 金属微細構造体の製造方法 |
| TWI227380B (en) | 2002-06-06 | 2005-02-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP2004103773A (ja) | 2002-09-09 | 2004-04-02 | Nikon Corp | Ｘ線発生装置、ｘ線露光装置及びｘ線フィルター |
| US7453645B2 (en) * | 2004-12-30 | 2008-11-18 | Asml Netherlands B.V. | Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
| US7372623B2 (en) | 2005-03-29 | 2008-05-13 | Asml Netherlands B.V. | Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
| DE102005020521B4 (de) | 2005-04-29 | 2013-05-02 | Xtreme Technologies Gmbh | Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas |
| JP2007227532A (ja) | 2006-02-22 | 2007-09-06 | Dainippon Printing Co Ltd | 電磁波遮蔽シート |
| US7453071B2 (en) | 2006-03-29 | 2008-11-18 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
| US8536551B2 (en) * | 2008-06-12 | 2013-09-17 | Gigaphoton Inc. | Extreme ultra violet light source apparatus |
| JP5511818B2 (ja) * | 2008-08-06 | 2014-06-04 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置用の光学素子、かかる光学素子を含むリソグラフィ装置、およびかかる光学素子を製造する方法 |
| CN102099747B (zh) * | 2008-08-14 | 2013-06-19 | Asml荷兰有限公司 | 辐射源、光刻设备以及器件制造方法 |
| NL2003303A (en) * | 2008-08-29 | 2010-03-11 | Asml Netherlands Bv | Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby. |
| US9195152B2 (en) | 2008-09-26 | 2015-11-24 | Asml Netherlands B.V. | Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter |
| EP2449430A1 (en) | 2009-06-30 | 2012-05-09 | ASML Netherlands BV | Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter |
| NL2005119A (en) | 2009-08-27 | 2011-03-01 | Asml Netherlands Bv | Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter. |
| KR20120081981A (ko) | 2009-09-16 | 2012-07-20 | 에이에스엠엘 네델란즈 비.브이. | 스펙트럼 퓨리티 필터, 리소그래피 장치, 스펙트럼 퓨리티 필터 제조 방법, 및 리소그래피 장치를 이용한 디바이스 제조 방법 |
| US20120182537A1 (en) | 2009-09-23 | 2012-07-19 | Asml Netherlands B.V. | Spectral purity filter, lithographic apparatus, and device manufacturing method |
| KR101797052B1 (ko) | 2010-02-12 | 2017-11-13 | 에이에스엠엘 네델란즈 비.브이. | 스펙트럼 퓨리티 필터 |
| US8298729B2 (en) * | 2010-03-18 | 2012-10-30 | Micron Technology, Inc. | Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks |
-
2011
- 2011-02-22 US US13/643,265 patent/US9726989B2/en active Active
- 2011-02-22 WO PCT/EP2011/052573 patent/WO2011134692A1/en not_active Ceased
- 2011-02-22 EP EP11707372A patent/EP2564273A1/en not_active Withdrawn
- 2011-02-22 KR KR1020127030943A patent/KR101776829B1/ko active Active
- 2011-02-22 CN CN201180020839.6A patent/CN102859444B/zh active Active
- 2011-02-22 JP JP2013506551A patent/JP5727590B2/ja active Active
- 2011-02-22 SG SG2012075628A patent/SG184557A1/en unknown
- 2011-03-23 TW TW100109983A patent/TWI528117B/zh active
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