JP2011509907A5 - - Google Patents
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- Publication number
- JP2011509907A5 JP2011509907A5 JP2010542546A JP2010542546A JP2011509907A5 JP 2011509907 A5 JP2011509907 A5 JP 2011509907A5 JP 2010542546 A JP2010542546 A JP 2010542546A JP 2010542546 A JP2010542546 A JP 2010542546A JP 2011509907 A5 JP2011509907 A5 JP 2011509907A5
- Authority
- JP
- Japan
- Prior art keywords
- complex
- halogen silane
- distillation
- triphenylmethyl chloride
- process according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 29
- 238000004821 distillation Methods 0.000 claims description 23
- 229910052736 halogen Inorganic materials 0.000 claims description 21
- 238000000926 separation method Methods 0.000 claims description 21
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 16
- 150000002367 halogens Chemical class 0.000 claims description 16
- 229910000077 silane Inorganic materials 0.000 claims description 16
- JBWKIWSBJXDJDT-UHFFFAOYSA-N triphenylmethyl chloride Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(Cl)C1=CC=CC=C1 JBWKIWSBJXDJDT-UHFFFAOYSA-N 0.000 claims description 15
- 238000001914 filtration Methods 0.000 claims description 8
- 238000010668 complexation reaction Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- -1 halogen silanes Chemical class 0.000 claims description 5
- 239000002244 precipitate Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000000536 complexating effect Effects 0.000 claims description 3
- 239000000047 product Substances 0.000 claims description 3
- 239000011541 reaction mixture Substances 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000005119 centrifugation Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 2
- 239000005046 Chlorosilane Substances 0.000 claims 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims 1
- 238000010924 continuous production Methods 0.000 claims 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 238000011282 treatment Methods 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 1
- 150000001639 boron compounds Chemical group 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000005647 hydrohalogenation reaction Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008004397A DE102008004397A1 (de) | 2008-01-14 | 2008-01-14 | Verfahren zur Verminderung des Gehaltes von Elementen, wie Bor, in Halogensilanen sowie Anlage zur Durchführung des Verfahrens |
| PCT/EP2008/065892 WO2009089950A2 (de) | 2008-01-14 | 2008-11-20 | Verfahren zur verminderung des gehaltes von elementen, wie bor, in halogensilanen sowie anlage zur durchführung des verfahrens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011509907A JP2011509907A (ja) | 2011-03-31 |
| JP2011509907A5 true JP2011509907A5 (OSRAM) | 2014-02-13 |
Family
ID=40546089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010542546A Pending JP2011509907A (ja) | 2008-01-14 | 2008-11-20 | ハロゲンシラン中の元素、例えばホウ素の含分を低減させる方法、並びに該方法を実施するための装置 |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US20100278706A1 (OSRAM) |
| EP (1) | EP2229342B1 (OSRAM) |
| JP (1) | JP2011509907A (OSRAM) |
| KR (1) | KR20100112574A (OSRAM) |
| CN (1) | CN101486463A (OSRAM) |
| AT (1) | ATE523469T1 (OSRAM) |
| BR (1) | BRPI0822183A2 (OSRAM) |
| CA (1) | CA2711546A1 (OSRAM) |
| DE (1) | DE102008004397A1 (OSRAM) |
| ES (1) | ES2371999T3 (OSRAM) |
| RU (1) | RU2504515C2 (OSRAM) |
| UA (1) | UA102239C2 (OSRAM) |
| WO (1) | WO2009089950A2 (OSRAM) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITRM20040570A1 (it) | 2004-11-19 | 2005-02-19 | Memc Electronic Materials | Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio. |
| DE102005041137A1 (de) | 2005-08-30 | 2007-03-01 | Degussa Ag | Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid |
| DE102006003464A1 (de) * | 2006-01-25 | 2007-07-26 | Degussa Gmbh | Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung |
| DE102007007874A1 (de) * | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Silane |
| DE102007059170A1 (de) * | 2007-12-06 | 2009-06-10 | Evonik Degussa Gmbh | Katalysator und Verfahren zur Dismutierung von Wasserstoff enthaltenden Halogensilanen |
| DE102008002537A1 (de) * | 2008-06-19 | 2009-12-24 | Evonik Degussa Gmbh | Verfahren zur Entfernung von Bor enthaltenden Verunreinigungen aus Halogensilanen sowie Anlage zur Durchführung des Verfahrens |
| DE102008054537A1 (de) * | 2008-12-11 | 2010-06-17 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration |
| DE102009027730A1 (de) | 2009-07-15 | 2011-01-27 | Evonik Degussa Gmbh | Verahren und Verwendung von aminofunktionellen Harzen zur Dismutierung von Halogensilanen und zur Entfernung von Fremdmetallen |
| JP5387267B2 (ja) * | 2009-09-17 | 2014-01-15 | 三菱マテリアル株式会社 | クロロシラン精製装置及び精製方法 |
| DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102010002342A1 (de) | 2010-02-25 | 2011-08-25 | Evonik Degussa GmbH, 45128 | Verwendung der spezifischen Widerstandsmessung zur indirekten Bestimmung der Reinheit von Silanen und Germanen und ein entsprechendes Verfahren |
| DE102011004058A1 (de) | 2011-02-14 | 2012-08-16 | Evonik Degussa Gmbh | Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung |
| DE102011004750A1 (de) | 2011-02-25 | 2012-08-30 | Evonik Degussa Gmbh | Vorrichtung und Verfahren zum Verarbeiten eines SiO2-haltigen Materials |
| DE102014203810A1 (de) * | 2014-03-03 | 2015-09-03 | Evonik Degussa Gmbh | Verfahren zur Herstellung reiner Octachlortrisilane und Decachlortetrasilane |
| JP6095613B2 (ja) * | 2014-07-10 | 2017-03-15 | 信越化学工業株式会社 | クロロシランの精製方法 |
| EP3180118A4 (en) | 2014-08-15 | 2018-04-04 | Massachusetts Institute Of Technology | Systems and methods for synthesizing chemical products, including active pharmaceutical ingredients |
| US10252916B2 (en) | 2014-09-04 | 2019-04-09 | Corner Star Limited | Methods for separating halosilanes |
| WO2017192595A1 (en) | 2016-05-02 | 2017-11-09 | Massachusetts Institute Of Technology | Reconfigurable multi-step chemical synthesis system and related components and methods |
| CN106744685B (zh) * | 2016-11-21 | 2018-10-23 | 亚洲硅业（青海）有限公司 | 电子级多晶硅生产中循环氢气的深度净化方法 |
| EP3659964A1 (en) | 2018-11-28 | 2020-06-03 | Hysilabs, SAS | Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds |
| CN112010313A (zh) * | 2019-05-31 | 2020-12-01 | 新特能源股份有限公司 | 一种多晶硅副产物渣料处理工艺及系统 |
| EP4065512B1 (de) | 2019-11-27 | 2024-03-20 | Wacker Chemie AG | Verfahren zur entfernung einer verunreinigung aus einem chlorsilangemisch |
| RU2759500C1 (ru) * | 2021-03-12 | 2021-11-15 | Лев Эдуардович Барышников | Способ очистки гексахлордисилана от примесей хлоридов металлов |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2812235A (en) * | 1955-09-16 | 1957-11-05 | Bell Telephone Labor Inc | Method of purifying volatile compounds of germanium and silicon |
| GB834380A (en) * | 1957-04-25 | 1960-05-04 | Licentia Gmbh | A method of producing purified silicon halide |
| NL235008A (OSRAM) * | 1958-01-11 | |||
| FR1518553A (fr) | 1960-03-11 | 1968-03-29 | Pechiney Prod Chimiques Sa | Procédé de purification de composés volatils de germanium et de silicium |
| DE1792651A1 (de) * | 1968-09-28 | 1971-11-25 | Dynamit Nobel Ag | Verfahren zur Reinigung von Chlorsilanen |
| US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
| US4374110A (en) * | 1981-06-15 | 1983-02-15 | Motorola, Inc. | Purification of silicon source materials |
| US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
| RU1835386C (ru) * | 1991-04-17 | 1993-08-23 | Запорожский титано-магниевый комбинат | Способ очистки хлорсиланов |
| JPH0731104B2 (ja) * | 1991-10-31 | 1995-04-10 | 住友シチックス株式会社 | トリクロロシラン溶液中の超微量成分捕集方法 |
| DE102004045245B4 (de) * | 2004-09-17 | 2007-11-15 | Degussa Gmbh | Vorrichtung und Verfahren zur Herstellung von Silanen |
| ITRM20040570A1 (it) * | 2004-11-19 | 2005-02-19 | Memc Electronic Materials | Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio. |
| RU2280010C1 (ru) * | 2004-12-10 | 2006-07-20 | Федеральное государственное унитарное предприятие "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" | Способ получения трихлорсилана |
-
2008
- 2008-01-14 DE DE102008004397A patent/DE102008004397A1/de not_active Withdrawn
- 2008-11-20 KR KR1020107015480A patent/KR20100112574A/ko not_active Ceased
- 2008-11-20 WO PCT/EP2008/065892 patent/WO2009089950A2/de not_active Ceased
- 2008-11-20 BR BRPI0822183-9A patent/BRPI0822183A2/pt not_active IP Right Cessation
- 2008-11-20 UA UAA201010057A patent/UA102239C2/ru unknown
- 2008-11-20 CA CA2711546A patent/CA2711546A1/en not_active Abandoned
- 2008-11-20 RU RU2010133878/05A patent/RU2504515C2/ru not_active IP Right Cessation
- 2008-11-20 US US12/811,925 patent/US20100278706A1/en not_active Abandoned
- 2008-11-20 EP EP08870936A patent/EP2229342B1/de not_active Not-in-force
- 2008-11-20 JP JP2010542546A patent/JP2011509907A/ja active Pending
- 2008-11-20 ES ES08870936T patent/ES2371999T3/es active Active
- 2008-11-20 AT AT08870936T patent/ATE523469T1/de active
-
2009
- 2009-01-13 CN CNA2009100022349A patent/CN101486463A/zh active Pending
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