BRPI0822183A2 - Processo para redução do teor de lementos tais como boro em halogenossilanos, bem como instalacões para realização do processo - Google Patents

Processo para redução do teor de lementos tais como boro em halogenossilanos, bem como instalacões para realização do processo

Info

Publication number
BRPI0822183A2
BRPI0822183A2 BRPI0822183-9A BRPI0822183A BRPI0822183A2 BR PI0822183 A2 BRPI0822183 A2 BR PI0822183A2 BR PI0822183 A BRPI0822183 A BR PI0822183A BR PI0822183 A2 BRPI0822183 A2 BR PI0822183A2
Authority
BR
Brazil
Prior art keywords
halosilanes
boron
reducing
elements
content
Prior art date
Application number
BRPI0822183-9A
Other languages
English (en)
Inventor
Ekkehard Müh
Hartwig Rauleder
Reinhold Schork
Original Assignee
Evonik Degussa Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Publication of BRPI0822183A2 publication Critical patent/BRPI0822183A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/10778—Purification
    • C01B33/10794—Purification by forming addition compounds or complexes, the reactant being possibly contained in an adsorbent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
BRPI0822183-9A 2008-01-14 2008-11-20 Processo para redução do teor de lementos tais como boro em halogenossilanos, bem como instalacões para realização do processo BRPI0822183A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008004397A DE102008004397A1 (de) 2008-01-14 2008-01-14 Verfahren zur Verminderung des Gehaltes von Elementen, wie Bor, in Halogensilanen sowie Anlage zur Durchführung des Verfahrens
PCT/EP2008/065892 WO2009089950A2 (de) 2008-01-14 2008-11-20 Verfahren zur verminderung des gehaltes von elementen, wie bor, in halogensilanen sowie anlage zur durchführung des verfahrens

Publications (1)

Publication Number Publication Date
BRPI0822183A2 true BRPI0822183A2 (pt) 2015-06-23

Family

ID=40546089

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0822183-9A BRPI0822183A2 (pt) 2008-01-14 2008-11-20 Processo para redução do teor de lementos tais como boro em halogenossilanos, bem como instalacões para realização do processo

Country Status (13)

Country Link
US (1) US20100278706A1 (pt)
EP (1) EP2229342B1 (pt)
JP (1) JP2011509907A (pt)
KR (1) KR20100112574A (pt)
CN (1) CN101486463A (pt)
AT (1) ATE523469T1 (pt)
BR (1) BRPI0822183A2 (pt)
CA (1) CA2711546A1 (pt)
DE (1) DE102008004397A1 (pt)
ES (1) ES2371999T3 (pt)
RU (1) RU2504515C2 (pt)
UA (1) UA102239C2 (pt)
WO (1) WO2009089950A2 (pt)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITRM20040570A1 (it) * 2004-11-19 2005-02-19 Memc Electronic Materials Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio.
DE102005041137A1 (de) 2005-08-30 2007-03-01 Degussa Ag Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid
DE102006003464A1 (de) * 2006-01-25 2007-07-26 Degussa Gmbh Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung
DE102007007874A1 (de) * 2007-02-14 2008-08-21 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Silane
DE102007059170A1 (de) * 2007-12-06 2009-06-10 Evonik Degussa Gmbh Katalysator und Verfahren zur Dismutierung von Wasserstoff enthaltenden Halogensilanen
DE102008002537A1 (de) * 2008-06-19 2009-12-24 Evonik Degussa Gmbh Verfahren zur Entfernung von Bor enthaltenden Verunreinigungen aus Halogensilanen sowie Anlage zur Durchführung des Verfahrens
DE102008054537A1 (de) * 2008-12-11 2010-06-17 Evonik Degussa Gmbh Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration
DE102009027730A1 (de) 2009-07-15 2011-01-27 Evonik Degussa Gmbh Verahren und Verwendung von aminofunktionellen Harzen zur Dismutierung von Halogensilanen und zur Entfernung von Fremdmetallen
JP5387267B2 (ja) * 2009-09-17 2014-01-15 三菱マテリアル株式会社 クロロシラン精製装置及び精製方法
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102010002342A1 (de) 2010-02-25 2011-08-25 Evonik Degussa GmbH, 45128 Verwendung der spezifischen Widerstandsmessung zur indirekten Bestimmung der Reinheit von Silanen und Germanen und ein entsprechendes Verfahren
DE102011004058A1 (de) 2011-02-14 2012-08-16 Evonik Degussa Gmbh Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung
DE102011004750A1 (de) 2011-02-25 2012-08-30 Evonik Degussa Gmbh Vorrichtung und Verfahren zum Verarbeiten eines SiO2-haltigen Materials
DE102014203810A1 (de) * 2014-03-03 2015-09-03 Evonik Degussa Gmbh Verfahren zur Herstellung reiner Octachlortrisilane und Decachlortetrasilane
JP6095613B2 (ja) * 2014-07-10 2017-03-15 信越化学工業株式会社 クロロシランの精製方法
AU2015301544A1 (en) 2014-08-15 2017-03-02 Massachusetts Institute Of Technology Systems and methods for synthesizing chemical products, including active pharmaceutical ingredients
US10252916B2 (en) * 2014-09-04 2019-04-09 Corner Star Limited Methods for separating halosilanes
EP3452220A4 (en) 2016-05-02 2020-01-01 Massachusetts Institute of Technology RECONFIGURABLE MULTI-STAGE CHEMICAL SYNTHESIS SYSTEM AND RELATED COMPONENTS AND METHODS
CN106744685B (zh) * 2016-11-21 2018-10-23 亚洲硅业（青海）有限公司 电子级多晶硅生产中循环氢气的深度净化方法
CN112010313A (zh) * 2019-05-31 2020-12-01 新特能源股份有限公司 一种多晶硅副产物渣料处理工艺及系统
KR20220088887A (ko) 2019-11-27 2022-06-28 와커 헤미 아게 클로로실란 혼합물로부터 불순물을 제거하는 방법
RU2759500C1 (ru) * 2021-03-12 2021-11-15 Лев Эдуардович Барышников Способ очистки гексахлордисилана от примесей хлоридов металлов

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Publication number Priority date Publication date Assignee Title
US2812235A (en) * 1955-09-16 1957-11-05 Bell Telephone Labor Inc Method of purifying volatile compounds of germanium and silicon
GB834380A (en) * 1957-04-25 1960-05-04 Licentia Gmbh A method of producing purified silicon halide
NL235008A (pt) * 1958-01-11
FR1518553A (fr) 1960-03-11 1968-03-29 Pechiney Prod Chimiques Sa Procédé de purification de composés volatils de germanium et de silicium
DE1792651A1 (de) * 1968-09-28 1971-11-25 Dynamit Nobel Ag Verfahren zur Reinigung von Chlorsilanen
US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
US4374110A (en) * 1981-06-15 1983-02-15 Motorola, Inc. Purification of silicon source materials
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
RU1835386C (ru) * 1991-04-17 1993-08-23 Запорожский титано-магниевый комбинат Способ очистки хлорсиланов
JPH0731104B2 (ja) * 1991-10-31 1995-04-10 住友シチックス株式会社 トリクロロシラン溶液中の超微量成分捕集方法
DE102004045245B4 (de) * 2004-09-17 2007-11-15 Degussa Gmbh Vorrichtung und Verfahren zur Herstellung von Silanen
ITRM20040570A1 (it) 2004-11-19 2005-02-19 Memc Electronic Materials Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio.
RU2280010C1 (ru) * 2004-12-10 2006-07-20 Федеральное государственное унитарное предприятие "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Способ получения трихлорсилана

Also Published As

Publication number Publication date
ATE523469T1 (de) 2011-09-15
ES2371999T3 (es) 2012-01-12
WO2009089950A3 (de) 2010-01-28
EP2229342A2 (de) 2010-09-22
WO2009089950A2 (de) 2009-07-23
CN101486463A (zh) 2009-07-22
RU2504515C2 (ru) 2014-01-20
CA2711546A1 (en) 2009-07-23
UA102239C2 (ru) 2013-06-25
JP2011509907A (ja) 2011-03-31
KR20100112574A (ko) 2010-10-19
EP2229342B1 (de) 2011-09-07
RU2010133878A (ru) 2012-02-27
DE102008004397A1 (de) 2009-07-16
US20100278706A1 (en) 2010-11-04

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 6A E 7A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2343 DE 01-12-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.