JP2011238909A5 - - Google Patents

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JP2011238909A5
JP2011238909A5 JP2011088783A JP2011088783A JP2011238909A5 JP 2011238909 A5 JP2011238909 A5 JP 2011238909A5 JP 2011088783 A JP2011088783 A JP 2011088783A JP 2011088783 A JP2011088783 A JP 2011088783A JP 2011238909 A5 JP2011238909 A5 JP 2011238909A5
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Japan
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field effect
effect transistor
nanowire
tunnel field
sacrificial
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JP2011088783A
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Japanese (ja)
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JP5542728B2 (ja
JP2011238909A (ja
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Priority claimed from EP10160382.7A external-priority patent/EP2378557B1/en
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JP2011088783A 2010-04-19 2011-04-13 垂直ｔｆｅｔの製造方法 Active JP5542728B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10160382.7 2010-04-19
EP10160382.7A EP2378557B1 (en) 2010-04-19 2010-04-19 Method of manufacturing a vertical TFET

Publications (3)

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JP2011238909A JP2011238909A (ja) 2011-11-24
JP2011238909A5 true JP2011238909A5 (enExample) 2014-04-03
JP5542728B2 JP5542728B2 (ja) 2014-07-09

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US (1) US8415209B2 (enExample)
EP (1) EP2378557B1 (enExample)
JP (1) JP5542728B2 (enExample)

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