JP2018537867A5 - - Google Patents

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JP2018537867A5
JP2018537867A5 JP2018542684A JP2018542684A JP2018537867A5 JP 2018537867 A5 JP2018537867 A5 JP 2018537867A5 JP 2018542684 A JP2018542684 A JP 2018542684A JP 2018542684 A JP2018542684 A JP 2018542684A JP 2018537867 A5 JP2018537867 A5 JP 2018537867A5
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JP
Japan
Prior art keywords
silicon
sige
fin
nanowire
nanostructure
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JP2018542684A
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English (en)
Japanese (ja)
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JP6773795B2 (ja
JP2018537867A (ja
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Priority claimed from PCT/US2016/059037 external-priority patent/WO2017075165A1/en
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Publication of JP2018537867A5 publication Critical patent/JP2018537867A5/ja
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JP2018542684A 2015-10-30 2016-10-27 カプセル化ナノ構造及び作製方法 Active JP6773795B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562248561P 2015-10-30 2015-10-30
US62/248,561 2015-10-30
PCT/US2016/059037 WO2017075165A1 (en) 2015-10-30 2016-10-27 Encapsulated nanosturctures and method for fabricating

Publications (3)

Publication Number Publication Date
JP2018537867A JP2018537867A (ja) 2018-12-20
JP2018537867A5 true JP2018537867A5 (enExample) 2019-12-05
JP6773795B2 JP6773795B2 (ja) 2020-10-21

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JP2018542684A Active JP6773795B2 (ja) 2015-10-30 2016-10-27 カプセル化ナノ構造及び作製方法

Country Status (6)

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US (2) US9985101B2 (enExample)
JP (1) JP6773795B2 (enExample)
KR (1) KR102557215B1 (enExample)
CN (1) CN108352400B (enExample)
TW (1) TWI705499B (enExample)
WO (1) WO2017075165A1 (enExample)

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KR20220112317A (ko) 2021-02-03 2022-08-11 삼성전자주식회사 반도체 소자
WO2023039307A2 (en) * 2021-05-28 2023-03-16 University Of Florida Research Foundation, Inc. Self-amplified resonators with embedded piezoresistive elements for high performance, ultra-low swap microwave and millimeter-wave applications
US12262559B2 (en) * 2022-04-07 2025-03-25 Applied Materials, Inc. Monolithic complementary field-effect transistors having carbon-doped release layers

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