CN108352400B - 包封的纳米结构及其制造方法 - Google Patents

包封的纳米结构及其制造方法 Download PDF

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CN108352400B
CN108352400B CN201680063745.XA CN201680063745A CN108352400B CN 108352400 B CN108352400 B CN 108352400B CN 201680063745 A CN201680063745 A CN 201680063745A CN 108352400 B CN108352400 B CN 108352400B
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silicon
sige
fin
nanowire
fin structure
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CN108352400A (zh
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凯文·S·琼斯
克里斯多夫·哈特姆
威廉·M·布鲁尔
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Varian Semiconductor Equipment Associates Inc
University of Florida Research Foundation Inc
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University of Florida Research Foundation Inc
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    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
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    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
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    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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  • Nanotechnology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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CN201680063745.XA 2015-10-30 2016-10-27 包封的纳米结构及其制造方法 Active CN108352400B (zh)

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US201562248561P 2015-10-30 2015-10-30
US62/248,561 2015-10-30
PCT/US2016/059037 WO2017075165A1 (en) 2015-10-30 2016-10-27 Encapsulated nanosturctures and method for fabricating

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3046243B1 (fr) * 2015-12-24 2017-12-22 Commissariat Energie Atomique Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur
KR102429611B1 (ko) * 2016-06-10 2022-08-04 삼성전자주식회사 반도체 장치 제조 방법
EP3382761A1 (en) 2017-03-29 2018-10-03 IMEC vzw Integration of silicon-germanium semiconductor structures
EP3425673A1 (en) * 2017-07-04 2019-01-09 IMEC vzw Germanium nanowire fabrication
US10680063B2 (en) * 2018-09-07 2020-06-09 International Business Machines Corporation Method of manufacturing stacked SiGe nanotubes
WO2020219372A1 (en) * 2019-04-24 2020-10-29 National Technology & Engineering Solutions Of Sandia, Llc Method for fabricating embedded nanostructures with arbitrary shape
JP7256708B2 (ja) 2019-07-09 2023-04-12 株式会社荏原製作所 めっき装置
TWI805947B (zh) * 2019-10-21 2023-06-21 美商應用材料股份有限公司 水平gaa奈米線及奈米平板電晶體
US11094699B1 (en) 2020-05-28 2021-08-17 Micron Technology, Inc. Apparatuses including stacked horizontal capacitor structures and related methods, memory devices, and electronic systems
KR20220112317A (ko) 2021-02-03 2022-08-11 삼성전자주식회사 반도체 소자
WO2023039307A2 (en) * 2021-05-28 2023-03-16 University Of Florida Research Foundation, Inc. Self-amplified resonators with embedded piezoresistive elements for high performance, ultra-low swap microwave and millimeter-wave applications
US12262559B2 (en) * 2022-04-07 2025-03-25 Applied Materials, Inc. Monolithic complementary field-effect transistors having carbon-doped release layers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010129974A (ja) * 2008-12-01 2010-06-10 Toshiba Corp 相補型半導体装置とその製造方法
CN104137237A (zh) * 2011-12-23 2014-11-05 英特尔公司 具有非分立的源极区和漏极区的纳米线结构

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7022617B2 (en) 2002-06-26 2006-04-04 Cornell Research Foundation, Inc. Small scale wires with microelectromechanical devices
KR100481209B1 (ko) * 2002-10-01 2005-04-08 삼성전자주식회사 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법
TWI283066B (en) * 2004-09-07 2007-06-21 Samsung Electronics Co Ltd Field effect transistor (FET) having wire channels and method of fabricating the same
US7405465B2 (en) * 2004-09-29 2008-07-29 Sandisk 3D Llc Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
WO2006101659A2 (en) 2005-03-17 2006-09-28 The George Washington University Method of making nanoparticle wires
US20080135949A1 (en) * 2006-12-08 2008-06-12 Agency For Science, Technology And Research Stacked silicon-germanium nanowire structure and method of forming the same
JP4310399B2 (ja) * 2006-12-08 2009-08-05 株式会社東芝 半導体装置及びその製造方法
US7821061B2 (en) 2007-03-29 2010-10-26 Intel Corporation Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications
FR2924108B1 (fr) * 2007-11-28 2010-02-12 Commissariat Energie Atomique Procede d'elaboration, sur un materiau dielectrique, de nanofils en materiaux semi-conducteur connectant deux electrodes
US8273591B2 (en) 2008-03-25 2012-09-25 International Business Machines Corporation Super lattice/quantum well nanowires
US7851790B2 (en) * 2008-12-30 2010-12-14 Intel Corporation Isolated Germanium nanowire on Silicon fin
JP2011199105A (ja) * 2010-03-23 2011-10-06 Toshiba Corp 半導体装置の製造方法
US8753942B2 (en) 2010-12-01 2014-06-17 Intel Corporation Silicon and silicon germanium nanowire structures
US8859389B2 (en) * 2011-01-28 2014-10-14 Kabushiki Kaisha Toshiba Methods of making fins and fin field effect transistors (FinFETs)
JP5271372B2 (ja) * 2011-03-18 2013-08-21 株式会社東芝 半導体装置の製造方法
WO2013095652A1 (en) * 2011-12-23 2013-06-27 Intel Corporation Uniaxially strained nanowire structure
US8927405B2 (en) * 2012-12-18 2015-01-06 International Business Machines Corporation Accurate control of distance between suspended semiconductor nanowires and substrate surface
US9064942B2 (en) * 2013-01-28 2015-06-23 International Business Machines Corporation Nanowire capacitor for bidirectional operation
US9184269B2 (en) 2013-08-20 2015-11-10 Taiwan Semiconductor Manufacturing Company Limited Silicon and silicon germanium nanowire formation
US8872161B1 (en) * 2013-08-26 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrate circuit with nanowires
US9263520B2 (en) 2013-10-10 2016-02-16 Globalfoundries Inc. Facilitating fabricating gate-all-around nanowire field-effect transistors
US9660035B2 (en) 2014-01-29 2017-05-23 International Business Machines Corporation Semiconductor device including superlattice SiGe/Si fin structure
US9985030B2 (en) 2014-04-07 2018-05-29 International Business Machines Corporation FinFET semiconductor device having integrated SiGe fin
US10435817B2 (en) * 2014-05-07 2019-10-08 President And Fellows Of Harvard College Controlled growth of nanoscale wires
US9431483B1 (en) * 2015-03-16 2016-08-30 United Microelectronics Corp. Nanowire and method of fabricating the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010129974A (ja) * 2008-12-01 2010-06-10 Toshiba Corp 相補型半導体装置とその製造方法
CN104137237A (zh) * 2011-12-23 2014-11-05 英特尔公司 具有非分立的源极区和漏极区的纳米线结构

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures;Tsung-Yang Liow, et al;《Applied Physics Letters》;20051219;第87卷(第26期);第262104-1~62104-3 *

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JP2018537867A (ja) 2018-12-20
US20170125526A1 (en) 2017-05-04
TW201724268A (zh) 2017-07-01
JP6773795B2 (ja) 2020-10-21
TWI705499B (zh) 2020-09-21
US10411096B2 (en) 2019-09-10
US9985101B2 (en) 2018-05-29
WO2017075165A1 (en) 2017-05-04
CN108352400A (zh) 2018-07-31
KR20180079388A (ko) 2018-07-10

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