JP2011222985A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011222985A
JP2011222985A JP2011063775A JP2011063775A JP2011222985A JP 2011222985 A JP2011222985 A JP 2011222985A JP 2011063775 A JP2011063775 A JP 2011063775A JP 2011063775 A JP2011063775 A JP 2011063775A JP 2011222985 A JP2011222985 A JP 2011222985A
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Japan
Prior art keywords
transistor
memory
circuit
memory cell
potential
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Withdrawn
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JP2011063775A
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English (en)
Japanese (ja)
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JP2011222985A5 (enExample
Inventor
Munehiro Kozuma
宗広 上妻
Yoshimoto Kurokawa
義元 黒川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011063775A priority Critical patent/JP2011222985A/ja
Publication of JP2011222985A publication Critical patent/JP2011222985A/ja
Publication of JP2011222985A5 publication Critical patent/JP2011222985A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Dram (AREA)
JP2011063775A 2010-03-25 2011-03-23 半導体装置 Withdrawn JP2011222985A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011063775A JP2011222985A (ja) 2010-03-25 2011-03-23 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010070401 2010-03-25
JP2010070401 2010-03-25
JP2011063775A JP2011222985A (ja) 2010-03-25 2011-03-23 半導体装置

Related Child Applications (1)

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JP2015082022A Division JP5976155B2 (ja) 2010-03-25 2015-04-13 半導体装置及び半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2011222985A true JP2011222985A (ja) 2011-11-04
JP2011222985A5 JP2011222985A5 (enExample) 2014-04-24

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JP2011063775A Withdrawn JP2011222985A (ja) 2010-03-25 2011-03-23 半導体装置
JP2015082022A Expired - Fee Related JP5976155B2 (ja) 2010-03-25 2015-04-13 半導体装置及び半導体装置の作製方法

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Country Status (4)

Country Link
US (1) US8472235B2 (enExample)
JP (2) JP2011222985A (enExample)
TW (1) TWI525630B (enExample)
WO (1) WO2011118351A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130134416A1 (en) * 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2021198841A1 (ja) * 2020-04-03 2021-10-07 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
CN102723359B (zh) * 2012-06-13 2015-04-29 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置
TWI608523B (zh) * 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
JP2019192869A (ja) * 2018-04-27 2019-10-31 東芝メモリ株式会社 半導体記憶装置
CN113345865B (zh) * 2021-05-28 2022-09-09 福建省晋华集成电路有限公司 半导体测试结构及缺陷检测方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09120693A (ja) * 1995-08-22 1997-05-06 Mitsubishi Electric Corp 半導体記憶装置
JP2000150900A (ja) * 1998-11-17 2000-05-30 Japan Science & Technology Corp トランジスタ及び半導体装置
JP2002063796A (ja) * 2000-08-21 2002-02-28 Sanyo Electric Co Ltd 不揮発性メモリ
JP2002073327A (ja) * 2000-08-29 2002-03-12 Pacific Design Kk データ処理ユニット、データ処理装置およびデータ処理ユニットの制御方法
JP2003323315A (ja) * 2002-02-26 2003-11-14 Pacific Design Kk データ処理装置、プロセッサユニットおよびデバッグユニット
JP2004103128A (ja) * 2002-09-10 2004-04-02 Renesas Technology Corp 半導体メモリおよび半導体メモリ書き込み制御装置
JP2004199813A (ja) * 2002-12-19 2004-07-15 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2005025845A (ja) * 2003-07-01 2005-01-27 Oki Electric Ind Co Ltd 半導体記憶装置
JP2008091005A (ja) * 2006-09-05 2008-04-17 Semiconductor Energy Lab Co Ltd 半導体装置
WO2009145581A2 (ko) * 2008-05-29 2009-12-03 삼성전자 주식회사 산화물 반도체 및 이를 포함하는 박막 트랜지스터

Family Cites Families (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713079B2 (enExample) 1975-02-10 1982-03-15
US4661927A (en) * 1985-01-15 1987-04-28 Honeywell Inc. Integrated Schottky logic read only memory
US4805143A (en) * 1986-01-16 1989-02-14 Hitachi Ltd. Read-only memory
US5226014A (en) * 1990-12-24 1993-07-06 Ncr Corporation Low power pseudo-static ROM
US5761700A (en) * 1994-12-27 1998-06-02 Motorola Inc. ROM mapping and inversion apparatus and method
EP0820644B1 (en) * 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) * 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
TW460731B (en) * 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) * 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2001298168A (ja) * 2001-03-23 2001-10-26 Semiconductor Energy Lab Co Ltd メモリー装置
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
US6996660B1 (en) * 2001-04-09 2006-02-07 Matrix Semiconductor, Inc. Memory device and method for storing and reading data in a write-once memory array
JP4090716B2 (ja) * 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
WO2003040441A1 (fr) * 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP2002319682A (ja) * 2002-01-04 2002-10-31 Japan Science & Technology Corp トランジスタ及び半導体装置
JP4083486B2 (ja) * 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US20030163674A1 (en) * 2002-02-26 2003-08-28 Mitsumasa Yoshimura Data processing apparatus, processor unit and debugging unit
CN1445821A (zh) * 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) * 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
KR100439039B1 (ko) * 2002-09-09 2004-07-03 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 센스 증폭기
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7130234B2 (en) * 2003-12-12 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4200926B2 (ja) * 2004-03-10 2008-12-24 ソニー株式会社 半導体集積回路
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP4962828B2 (ja) * 2004-08-25 2012-06-27 マイクロン テクノロジー， インク． ワード線ドライバ回路およびこれを利用する方法
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) * 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
CA2585190A1 (en) * 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7868326B2 (en) * 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
KR20070085879A (ko) * 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI569441B (zh) * 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) * 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) * 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) * 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) * 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
EP1748344A3 (en) * 2005-07-29 2015-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7669094B2 (en) * 2005-08-05 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and inspection method of semiconductor device and wireless chip
JP2007059128A (ja) * 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) * 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
WO2007058329A1 (en) * 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101258424B1 (ko) * 2005-12-02 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스
US7719872B2 (en) * 2005-12-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Write-once nonvolatile memory with redundancy capability
JP5057769B2 (ja) * 2005-12-28 2012-10-24 株式会社半導体エネルギー研究所 ライトワンスメモリ、半導体装置、および電子機器
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) * 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) * 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
US7649787B2 (en) 2006-09-05 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4332545B2 (ja) * 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) * 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) * 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) * 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) * 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) * 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) * 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) * 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) * 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) * 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
KR101092483B1 (ko) * 2007-05-31 2011-12-13 캐논 가부시끼가이샤 산화물 반도체를 사용한 박막트랜지스터의 제조 방법
JP5215158B2 (ja) * 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP4623179B2 (ja) * 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) * 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09120693A (ja) * 1995-08-22 1997-05-06 Mitsubishi Electric Corp 半導体記憶装置
JP2000150900A (ja) * 1998-11-17 2000-05-30 Japan Science & Technology Corp トランジスタ及び半導体装置
JP2002063796A (ja) * 2000-08-21 2002-02-28 Sanyo Electric Co Ltd 不揮発性メモリ
JP2002073327A (ja) * 2000-08-29 2002-03-12 Pacific Design Kk データ処理ユニット、データ処理装置およびデータ処理ユニットの制御方法
JP2003323315A (ja) * 2002-02-26 2003-11-14 Pacific Design Kk データ処理装置、プロセッサユニットおよびデバッグユニット
JP2004103128A (ja) * 2002-09-10 2004-04-02 Renesas Technology Corp 半導体メモリおよび半導体メモリ書き込み制御装置
JP2004199813A (ja) * 2002-12-19 2004-07-15 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2005025845A (ja) * 2003-07-01 2005-01-27 Oki Electric Ind Co Ltd 半導体記憶装置
JP2008091005A (ja) * 2006-09-05 2008-04-17 Semiconductor Energy Lab Co Ltd 半導体装置
WO2009145581A2 (ko) * 2008-05-29 2009-12-03 삼성전자 주식회사 산화물 반도체 및 이를 포함하는 박막 트랜지스터
JP2011525041A (ja) * 2008-05-29 2011-09-08 サムスン エレクトロニクス カンパニー リミテッド 酸化物半導体及びこれを含む薄膜トランジスタ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130134416A1 (en) * 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2013080931A1 (en) * 2011-11-30 2013-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9478704B2 (en) * 2011-11-30 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10002580B2 (en) 2011-11-30 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2021198841A1 (ja) * 2020-04-03 2021-10-07 株式会社半導体エネルギー研究所 半導体装置
JPWO2021198841A1 (enExample) * 2020-04-03 2021-10-07
JP7630496B2 (ja) 2020-04-03 2025-02-17 株式会社半導体エネルギー研究所 半導体装置

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