JP2011222859A5 - - Google Patents

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Publication number
JP2011222859A5
JP2011222859A5 JP2010092290A JP2010092290A JP2011222859A5 JP 2011222859 A5 JP2011222859 A5 JP 2011222859A5 JP 2010092290 A JP2010092290 A JP 2010092290A JP 2010092290 A JP2010092290 A JP 2010092290A JP 2011222859 A5 JP2011222859 A5 JP 2011222859A5
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JP
Japan
Prior art keywords
substrate
bias voltage
transformer
voltage
bias
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JP2010092290A
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English (en)
Japanese (ja)
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JP2011222859A (ja
JP5486383B2 (ja
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Priority to JP2010092290A priority Critical patent/JP5486383B2/ja
Priority claimed from JP2010092290A external-priority patent/JP5486383B2/ja
Priority to US13/084,854 priority patent/US20110247995A1/en
Priority to CN2011100929940A priority patent/CN102222612A/zh
Publication of JP2011222859A publication Critical patent/JP2011222859A/ja
Publication of JP2011222859A5 publication Critical patent/JP2011222859A5/ja
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Publication of JP5486383B2 publication Critical patent/JP5486383B2/ja
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JP2010092290A 2010-04-13 2010-04-13 ドライエッチング方法及び装置 Expired - Fee Related JP5486383B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010092290A JP5486383B2 (ja) 2010-04-13 2010-04-13 ドライエッチング方法及び装置
US13/084,854 US20110247995A1 (en) 2010-04-13 2011-04-12 Dry etching method and dry etching apparatus
CN2011100929940A CN102222612A (zh) 2010-04-13 2011-04-13 干刻蚀方法和干刻蚀设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010092290A JP5486383B2 (ja) 2010-04-13 2010-04-13 ドライエッチング方法及び装置

Publications (3)

Publication Number Publication Date
JP2011222859A JP2011222859A (ja) 2011-11-04
JP2011222859A5 true JP2011222859A5 (enExample) 2013-04-04
JP5486383B2 JP5486383B2 (ja) 2014-05-07

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Family Applications (1)

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JP2010092290A Expired - Fee Related JP5486383B2 (ja) 2010-04-13 2010-04-13 ドライエッチング方法及び装置

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US (1) US20110247995A1 (enExample)
JP (1) JP5486383B2 (enExample)
CN (1) CN102222612A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103325678B (zh) * 2013-05-20 2015-10-28 扬州晶新微电子有限公司 集成电路2微米厚铝刻蚀工艺方法
KR102222902B1 (ko) * 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
JP6495086B2 (ja) * 2015-04-24 2019-04-03 株式会社ディスコ ウエーハの加工方法
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11342194B2 (en) * 2019-11-25 2022-05-24 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
KR20220118024A (ko) 2021-02-18 2022-08-25 삼성전자주식회사 양면 냉각 방식을 활용한 가변 주파수 비정현파 전원 장치 및 이를 포함하는 플라즈마 처리 장치

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KR0141659B1 (ko) * 1993-07-19 1998-07-15 가나이 쓰토무 이물제거 방법 및 장치
US5620523A (en) * 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
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KR100275597B1 (ko) * 1996-02-23 2000-12-15 나카네 히사시 플리즈마처리장치
JP2893391B2 (ja) * 1996-11-21 1999-05-17 株式会社アドテック プラズマパラメータ測定装置
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JP3583294B2 (ja) * 1998-07-10 2004-11-04 株式会社アルバック プラズマ放出装置及びプラズマ処理装置
JP3310957B2 (ja) * 1999-08-31 2002-08-05 東京エレクトロン株式会社 プラズマ処理装置
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US20040182319A1 (en) * 2003-03-18 2004-09-23 Harqkyun Kim Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes
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JP2007242913A (ja) * 2006-03-09 2007-09-20 Hitachi High-Technologies Corp 試料載置電極及びそれを用いたプラズマ処理装置
JP5315942B2 (ja) * 2008-05-21 2013-10-16 東京エレクトロン株式会社 載置台機構、これを用いたプラズマ処理装置及び静電チャックへの電圧印加方法
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
JP5388306B2 (ja) * 2010-04-13 2014-01-15 富士フイルム株式会社 プラズマ酸化方法及びプラズマ酸化装置

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