SG10201801171WA - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
SG10201801171WA
SG10201801171WA SG10201801171WA SG10201801171WA SG10201801171WA SG 10201801171W A SG10201801171W A SG 10201801171WA SG 10201801171W A SG10201801171W A SG 10201801171WA SG 10201801171W A SG10201801171W A SG 10201801171WA SG 10201801171W A SG10201801171W A SG 10201801171WA
Authority
SG
Singapore
Prior art keywords
plasma
wafer
etching method
etching
plasma etching
Prior art date
Application number
SG10201801171WA
Inventor
Chito Kenta
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201801171WA publication Critical patent/SG10201801171WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H01J2237/1825—Evacuating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PLASMA ETCHING METHOD Disclosed herein is a plasma etching method for plasma-etching a ground surface of a wafer after the wafer with a tape attached to its lower surface is ground. The plasma etching method includes a drying step of applying heat to the tape to remove water present in the tape, an electrostatic holding step of electrostatically holding the wafer by an electrostatic force generated by supplying DC power to electrodes of an electrostatic chuck, after the drying step, and an etching step of reducing the pressure of a reduced-pressure chamber and plasma-etching the ground surface of the wafer by a reaction gas brought into a plasma state, after the electrostatic holding step. (Figure 2)
SG10201801171WA 2017-02-17 2018-02-12 Plasma etching method SG10201801171WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017027477A JP2018133505A (en) 2017-02-17 2017-02-17 Plasma etching method

Publications (1)

Publication Number Publication Date
SG10201801171WA true SG10201801171WA (en) 2018-09-27

Family

ID=63167937

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201801171WA SG10201801171WA (en) 2017-02-17 2018-02-12 Plasma etching method

Country Status (6)

Country Link
US (1) US10453719B2 (en)
JP (1) JP2018133505A (en)
KR (1) KR20180095444A (en)
CN (1) CN108461397B (en)
SG (1) SG10201801171WA (en)
TW (1) TWI729269B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7012454B2 (en) * 2017-04-27 2022-01-28 株式会社岡本工作機械製作所 Manufacturing method of electrostatic suction chuck and manufacturing method of semiconductor device
JP2020049400A (en) * 2018-09-25 2020-04-02 東京エレクトロン株式会社 Dry air generation device, dry air generation method and substrate processing system
JP7134826B2 (en) * 2018-10-11 2022-09-12 東京エレクトロン株式会社 Electrostatic chuck production method
JP7265430B2 (en) * 2019-07-02 2023-04-26 株式会社ディスコ processing equipment

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7074720B2 (en) * 2001-06-25 2006-07-11 Matsushita Electric Industrial Co., Ltd. Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device
JP2005191511A (en) * 2003-12-02 2005-07-14 Dainippon Screen Mfg Co Ltd Substrate processing equipment and substrate processing method
JP4968819B2 (en) * 2006-04-13 2012-07-04 株式会社ディスコ Wafer processing method
JP2010239030A (en) * 2009-03-31 2010-10-21 Lintec Corp Method of processing semiconductor wafer
JP5689269B2 (en) * 2010-09-16 2015-03-25 日東電工株式会社 Adhesive tape
CN103295936B (en) * 2012-02-29 2016-01-13 斯克林集团公司 Substrate board treatment and substrate processing method using same
JP6044976B2 (en) * 2012-06-11 2016-12-14 株式会社ディスコ Wafer processing method
CN203200109U (en) * 2013-03-19 2013-09-18 中冶南方工程技术有限公司 Processing system of reverse osmosis concentrated water
JP6221710B2 (en) * 2013-12-10 2017-11-01 住友電気工業株式会社 Manufacturing method of semiconductor device
JP6106332B2 (en) * 2014-03-31 2017-03-29 三井化学東セロ株式会社 Protective film and method for manufacturing semiconductor device using the protective film
JP2016004830A (en) * 2014-06-13 2016-01-12 株式会社ディスコ Method of manufacturing semiconductor chip
JP6293017B2 (en) * 2014-08-15 2018-03-14 株式会社ディスコ Wafer processing method
JP2016092347A (en) * 2014-11-11 2016-05-23 株式会社ディスコ Etching method
JP2016143785A (en) 2015-02-03 2016-08-08 株式会社ディスコ Decompression processing unit
JP2016195151A (en) * 2015-03-31 2016-11-17 パナソニックＩｐマネジメント株式会社 Plasma processing apparatus and plasma processing method
JP6545518B2 (en) * 2015-04-27 2019-07-17 株式会社ディスコ Wafer drying method and processing apparatus
JP6509636B2 (en) * 2015-06-02 2019-05-08 株式会社ディスコ Method of forming gettering layer
JP6534871B2 (en) * 2015-06-24 2019-06-26 株式会社ディスコ How to paste plate-like work
JP2018085408A (en) * 2016-11-22 2018-05-31 株式会社ディスコ Decompressor

Also Published As

Publication number Publication date
CN108461397A (en) 2018-08-28
TWI729269B (en) 2021-06-01
TW201832288A (en) 2018-09-01
KR20180095444A (en) 2018-08-27
JP2018133505A (en) 2018-08-23
US10453719B2 (en) 2019-10-22
US20180240690A1 (en) 2018-08-23
CN108461397B (en) 2023-09-19

Similar Documents

Publication Publication Date Title
SG10201801171WA (en) Plasma etching method
TW200739719A (en) Plasma etching method and computer-readable storage medium
KR20180084647A (en) Plasma processing apparatus
JP2011511473A5 (en)
WO2012166727A3 (en) Substrate freeze dry apparatus and method
WO2014127027A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
TW200612488A (en) Plasma processing apparatus, method thereof, and computer readable memory medium
TW200641991A (en) Methods for silicon electrode assembly etch rate and etch uniformity recovery
WO2012125656A3 (en) Methods for etch of sin films
SG10201805798UA (en) Etching method and residue removal method
JP2015181143A5 (en) Plasma etching method
TW200737345A (en) Method and system for selectively etching a dielectric material relative to silicon
JP2015095396A5 (en)
WO2014137905A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
SG10201909284PA (en) Residue free oxide etch
TWD191983S (en) Ionizer
KR20120004190A (en) Cleaning method of semiconductor manufacturing apparatus
SG11201806972RA (en) Substrate treatment method
SG10201805185SA (en) Electrostatic Attraction Method
WO2012154747A3 (en) High pressure bevel etch process
EP4226999A3 (en) Plasma reactor for liquid and gas and related methods
TWI606547B (en) Plasma processing chamber and its de-chucking device and method
JP2011222859A5 (en)
TW201612973A (en) Method for etching
KR102427971B1 (en) Plasma processing method