SG10201805798UA - Etching method and residue removal method - Google Patents
Etching method and residue removal methodInfo
- Publication number
- SG10201805798UA SG10201805798UA SG10201805798UA SG10201805798UA SG10201805798UA SG 10201805798U A SG10201805798U A SG 10201805798UA SG 10201805798U A SG10201805798U A SG 10201805798UA SG 10201805798U A SG10201805798U A SG 10201805798UA SG 10201805798U A SG10201805798U A SG 10201805798UA
- Authority
- SG
- Singapore
- Prior art keywords
- etching
- residue
- silica
- gas
- residue removal
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 9
- 238000000034 method Methods 0.000 title abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Robotics (AREA)
- Drying Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
ETCHING METHOD AND RESIDUE REMOV AL METHOD An etching method of etching a silica-based residue containing a base component formed in an SiO2 film, includes selectively etching the silica-based residue by supplying an HF gas, an H2O gas or an alcohol gas to a target substrate having the SiO2 film, on which the silica- based residue is formed, and removing an etching residue caused by the selectively etching the silica-based residue, after the selectively etching the silica-based residue. The removing an etching residue includes a first process of supplying an H2O gas or an alcohol gas to the target substrate and a second process of heating the target substrate after the first process. FIGURE 6A
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017133039A JP6796559B2 (en) | 2017-07-06 | 2017-07-06 | Etching method and residue removal method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201805798UA true SG10201805798UA (en) | 2019-02-27 |
Family
ID=64902908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201805798UA SG10201805798UA (en) | 2017-07-06 | 2018-07-04 | Etching method and residue removal method |
Country Status (6)
Country | Link |
---|---|
US (1) | US10818506B2 (en) |
JP (1) | JP6796559B2 (en) |
KR (1) | KR102181910B1 (en) |
CN (1) | CN109216186B (en) |
SG (1) | SG10201805798UA (en) |
TW (1) | TWI757516B (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10741495B2 (en) * | 2018-01-18 | 2020-08-11 | Globalfoundries Inc. | Structure and method to reduce shorts and contact resistance in semiconductor devices |
JP7160642B2 (en) * | 2018-11-16 | 2022-10-25 | 株式会社Screenホールディングス | Substrate processing method, three-dimensional memory device manufacturing method, and substrate processing apparatus |
JP7209556B2 (en) * | 2019-02-05 | 2023-01-20 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
JP7193731B2 (en) * | 2019-03-29 | 2022-12-21 | 東京エレクトロン株式会社 | Etching method and etching apparatus |
US10692730B1 (en) | 2019-08-30 | 2020-06-23 | Mattson Technology, Inc. | Silicon oxide selective dry etch process |
JP7345334B2 (en) * | 2019-09-18 | 2023-09-15 | 東京エレクトロン株式会社 | Etching method and substrate processing system |
JP7349861B2 (en) * | 2019-09-24 | 2023-09-25 | 東京エレクトロン株式会社 | Etching methods, damaged layer removal methods, and storage media |
JP7030858B2 (en) * | 2020-01-06 | 2022-03-07 | 株式会社Kokusai Electric | Semiconductor device manufacturing methods, substrate processing devices and programs |
US11295758B2 (en) * | 2020-03-20 | 2022-04-05 | Seagate Technology Llc | Trusted listening |
JP7065254B2 (en) * | 2020-04-10 | 2022-05-11 | 株式会社日立ハイテク | Etching method |
KR20220087623A (en) * | 2020-12-17 | 2022-06-27 | 삼성전자주식회사 | Apparatus for processing a substrate |
WO2023002521A1 (en) * | 2021-07-19 | 2023-01-26 | 株式会社日立ハイテク | Semiconductor manufacturing device and method for cleaning semiconductor manufacturing device |
WO2024049699A1 (en) * | 2022-08-31 | 2024-03-07 | Lam Research Corporation | Nitride thermal atomic layer etch |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6162370A (en) | 1998-08-28 | 2000-12-19 | Ashland Inc. | Composition and method for selectively etching a silicon nitride film |
JP4833512B2 (en) | 2003-06-24 | 2011-12-07 | 東京エレクトロン株式会社 | To-be-processed object processing apparatus, to-be-processed object processing method, and to-be-processed object conveyance method |
JP2005019787A (en) | 2003-06-27 | 2005-01-20 | Sony Corp | Method for cleaning wafer |
CN100449709C (en) * | 2005-02-14 | 2009-01-07 | 东京毅力科创株式会社 | Method of processing and cleaning substrate, and method of and program for manufacturing electronic device |
JP4476196B2 (en) | 2005-08-23 | 2010-06-09 | 富士通マイクロエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
JP2007266490A (en) | 2006-03-29 | 2007-10-11 | Toshiba Corp | Method for processing substrate and method for manufacturing semiconductor device |
US7718032B2 (en) * | 2006-06-22 | 2010-05-18 | Tokyo Electron Limited | Dry non-plasma treatment system and method of using |
JP5084250B2 (en) | 2006-12-26 | 2012-11-28 | 東京エレクトロン株式会社 | Gas processing apparatus, gas processing method, and storage medium |
TW200842971A (en) * | 2007-04-18 | 2008-11-01 | Philtech Inc | Semiconductor device, its manufacturing method, dry etching method, method for manufacturing wiring material and dry etching device |
CN101388341B (en) * | 2007-09-07 | 2011-07-27 | 应用材料股份有限公司 | Impurity control in hdp-cvd dep/etch/dep processes |
JP5374039B2 (en) * | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing apparatus, and storage medium |
WO2012026286A1 (en) * | 2010-08-27 | 2012-03-01 | 東京エレクトロン株式会社 | Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element |
KR102045851B1 (en) | 2012-08-27 | 2019-12-04 | 삼성전자주식회사 | A vertical type semiconductor device and method of manufacturing the same |
JP6060460B2 (en) * | 2012-11-22 | 2017-01-18 | アーゼット・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | Method for forming siliceous film and siliceous film formed by the same method |
JP2016025195A (en) | 2014-07-18 | 2016-02-08 | 東京エレクトロン株式会社 | Etching method |
JP6494226B2 (en) * | 2014-09-16 | 2019-04-03 | 東京エレクトロン株式会社 | Etching method |
US9431268B2 (en) | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
US9349605B1 (en) * | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
-
2017
- 2017-07-06 JP JP2017133039A patent/JP6796559B2/en active Active
-
2018
- 2018-07-02 TW TW107122749A patent/TWI757516B/en active
- 2018-07-03 US US16/026,589 patent/US10818506B2/en active Active
- 2018-07-04 KR KR1020180077691A patent/KR102181910B1/en active IP Right Grant
- 2018-07-04 SG SG10201805798UA patent/SG10201805798UA/en unknown
- 2018-07-05 CN CN201810731781.XA patent/CN109216186B/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201920749A (en) | 2019-06-01 |
JP2019016698A (en) | 2019-01-31 |
CN109216186B (en) | 2023-08-18 |
CN109216186A (en) | 2019-01-15 |
US20190013207A1 (en) | 2019-01-10 |
KR20190005760A (en) | 2019-01-16 |
JP6796559B2 (en) | 2020-12-09 |
US10818506B2 (en) | 2020-10-27 |
KR102181910B1 (en) | 2020-11-23 |
TWI757516B (en) | 2022-03-11 |
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