JP5486383B2 - ドライエッチング方法及び装置 - Google Patents

ドライエッチング方法及び装置 Download PDF

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Publication number
JP5486383B2
JP5486383B2 JP2010092290A JP2010092290A JP5486383B2 JP 5486383 B2 JP5486383 B2 JP 5486383B2 JP 2010092290 A JP2010092290 A JP 2010092290A JP 2010092290 A JP2010092290 A JP 2010092290A JP 5486383 B2 JP5486383 B2 JP 5486383B2
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JP
Japan
Prior art keywords
dry etching
substrate
plasma
bias
etching apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010092290A
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English (en)
Japanese (ja)
Other versions
JP2011222859A (ja
JP2011222859A5 (enExample
Inventor
秀治 高橋
春雄 進藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Tokai University Educational System
Original Assignee
Fujifilm Corp
Tokai University Educational System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp, Tokai University Educational System filed Critical Fujifilm Corp
Priority to JP2010092290A priority Critical patent/JP5486383B2/ja
Priority to US13/084,854 priority patent/US20110247995A1/en
Priority to CN2011100929940A priority patent/CN102222612A/zh
Publication of JP2011222859A publication Critical patent/JP2011222859A/ja
Publication of JP2011222859A5 publication Critical patent/JP2011222859A5/ja
Application granted granted Critical
Publication of JP5486383B2 publication Critical patent/JP5486383B2/ja
Expired - Fee Related legal-status Critical Current
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    • H10P50/285—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP2010092290A 2010-04-13 2010-04-13 ドライエッチング方法及び装置 Expired - Fee Related JP5486383B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010092290A JP5486383B2 (ja) 2010-04-13 2010-04-13 ドライエッチング方法及び装置
US13/084,854 US20110247995A1 (en) 2010-04-13 2011-04-12 Dry etching method and dry etching apparatus
CN2011100929940A CN102222612A (zh) 2010-04-13 2011-04-13 干刻蚀方法和干刻蚀设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010092290A JP5486383B2 (ja) 2010-04-13 2010-04-13 ドライエッチング方法及び装置

Publications (3)

Publication Number Publication Date
JP2011222859A JP2011222859A (ja) 2011-11-04
JP2011222859A5 JP2011222859A5 (enExample) 2013-04-04
JP5486383B2 true JP5486383B2 (ja) 2014-05-07

Family

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Family Applications (1)

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JP2010092290A Expired - Fee Related JP5486383B2 (ja) 2010-04-13 2010-04-13 ドライエッチング方法及び装置

Country Status (3)

Country Link
US (1) US20110247995A1 (enExample)
JP (1) JP5486383B2 (enExample)
CN (1) CN102222612A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103325678B (zh) * 2013-05-20 2015-10-28 扬州晶新微电子有限公司 集成电路2微米厚铝刻蚀工艺方法
KR102222902B1 (ko) * 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
JP6495086B2 (ja) * 2015-04-24 2019-04-03 株式会社ディスコ ウエーハの加工方法
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11342194B2 (en) * 2019-11-25 2022-05-24 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
KR20220118024A (ko) 2021-02-18 2022-08-25 삼성전자주식회사 양면 냉각 방식을 활용한 가변 주파수 비정현파 전원 장치 및 이를 포함하는 플라즈마 처리 장치

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0395415B1 (en) * 1989-04-27 1995-03-15 Fujitsu Limited Apparatus for and method of processing a semiconductor device using microwave-generated plasma
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
JPH04132220A (ja) * 1990-09-21 1992-05-06 Tokyo Ohka Kogyo Co Ltd プラズマテーパエッチング方法
JP2888258B2 (ja) * 1990-11-30 1999-05-10 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP3266163B2 (ja) * 1992-10-14 2002-03-18 東京応化工業株式会社 プラズマ処理装置
US5494522A (en) * 1993-03-17 1996-02-27 Tokyo Electron Limited Plasma process system and method
KR0141659B1 (ko) * 1993-07-19 1998-07-15 가나이 쓰토무 이물제거 방법 및 장치
US5620523A (en) * 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
KR100275597B1 (ko) * 1996-02-23 2000-12-15 나카네 히사시 플리즈마처리장치
JP2893391B2 (ja) * 1996-11-21 1999-05-17 株式会社アドテック プラズマパラメータ測定装置
US5970907A (en) * 1997-01-27 1999-10-26 Canon Kabushiki Kaisha Plasma processing apparatus
JPH11219937A (ja) * 1998-01-30 1999-08-10 Toshiba Corp プロセス装置
JPH11224796A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
JP3583294B2 (ja) * 1998-07-10 2004-11-04 株式会社アルバック プラズマ放出装置及びプラズマ処理装置
JP3310957B2 (ja) * 1999-08-31 2002-08-05 東京エレクトロン株式会社 プラズマ処理装置
JP2002280369A (ja) * 2001-03-19 2002-09-27 Canon Sales Co Inc シリコン基板の酸化膜形成装置及び酸化膜形成方法
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US20030015292A1 (en) * 2001-08-16 2003-01-23 Hwang Chul Ju Apparatus for fabricating a semiconductor device
KR100453578B1 (ko) * 2002-01-04 2004-10-20 주성엔지니어링(주) 실리콘 에피택셜층 성장공정 전의 기판 사전 세정방법
US20040182319A1 (en) * 2003-03-18 2004-09-23 Harqkyun Kim Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes
JP2006324496A (ja) * 2005-05-19 2006-11-30 Mitsubishi Electric Corp 薄膜トランジスタの製造方法
JP2007242913A (ja) * 2006-03-09 2007-09-20 Hitachi High-Technologies Corp 試料載置電極及びそれを用いたプラズマ処理装置
JP5315942B2 (ja) * 2008-05-21 2013-10-16 東京エレクトロン株式会社 載置台機構、これを用いたプラズマ処理装置及び静電チャックへの電圧印加方法
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
JP5388306B2 (ja) * 2010-04-13 2014-01-15 富士フイルム株式会社 プラズマ酸化方法及びプラズマ酸化装置

Also Published As

Publication number Publication date
JP2011222859A (ja) 2011-11-04
CN102222612A (zh) 2011-10-19
US20110247995A1 (en) 2011-10-13

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