JP2011216529A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2011216529A JP2011216529A JP2010080509A JP2010080509A JP2011216529A JP 2011216529 A JP2011216529 A JP 2011216529A JP 2010080509 A JP2010080509 A JP 2010080509A JP 2010080509 A JP2010080509 A JP 2010080509A JP 2011216529 A JP2011216529 A JP 2011216529A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- dicing
- semiconductor
- wafer
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 230000008569 process Effects 0.000 claims description 22
- 230000000994 depressogenic effect Effects 0.000 abstract 1
- 238000003825 pressing Methods 0.000 description 70
- 239000012790 adhesive layer Substances 0.000 description 42
- 239000010410 layer Substances 0.000 description 38
- 229920005989 resin Polymers 0.000 description 32
- 239000011347 resin Substances 0.000 description 32
- 239000000428 dust Substances 0.000 description 29
- 239000000853 adhesive Substances 0.000 description 18
- 230000001070 adhesive effect Effects 0.000 description 18
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 17
- 230000005855 radiation Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 239000003822 epoxy resin Substances 0.000 description 10
- 229920000647 polyepoxide Polymers 0.000 description 10
- 239000002390 adhesive tape Substances 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 7
- 238000001723 curing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001228 polyisocyanate Polymers 0.000 description 4
- 239000005056 polyisocyanate Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- IVJISJACKSSFGE-UHFFFAOYSA-N formaldehyde;1,3,5-triazine-2,4,6-triamine Chemical compound O=C.NC1=NC(N)=NC(N)=N1 IVJISJACKSSFGE-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical class C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UBCKGWBNUIFUST-YHYXMXQVSA-N tetrachlorvinphos Chemical compound COP(=O)(OC)O\C(=C/Cl)C1=CC(Cl)=C(Cl)C=C1Cl UBCKGWBNUIFUST-YHYXMXQVSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Die Bonding (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010080509A JP2011216529A (ja) | 2010-03-31 | 2010-03-31 | 半導体装置の製造方法 |
CN201180015691.7A CN102822946B (zh) | 2010-03-31 | 2011-03-23 | 半导体装置的制造方法 |
PCT/JP2011/056890 WO2011125492A1 (ja) | 2010-03-31 | 2011-03-23 | 半導体装置の製造方法 |
KR1020127025603A KR20130009799A (ko) | 2010-03-31 | 2011-03-23 | 반도체 장치의 제조 방법 |
TW100110675A TWI427691B (zh) | 2010-03-31 | 2011-03-29 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010080509A JP2011216529A (ja) | 2010-03-31 | 2010-03-31 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011216529A true JP2011216529A (ja) | 2011-10-27 |
Family
ID=44762446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010080509A Pending JP2011216529A (ja) | 2010-03-31 | 2010-03-31 | 半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2011216529A (ko) |
KR (1) | KR20130009799A (ko) |
CN (1) | CN102822946B (ko) |
TW (1) | TWI427691B (ko) |
WO (1) | WO2011125492A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013214739A (ja) * | 2012-03-30 | 2013-10-17 | Vesi Switzerland Ag | 金属箔から半導体チップを剥離する方法 |
WO2023100831A1 (ja) * | 2021-11-30 | 2023-06-08 | ボンドテック株式会社 | チップ周部剥離装置、チップ供給装置、チップ供給システム、チップ接合システム、ピックアップ装置、チップ周部剥離方法、チップ供給方法、チップ接合方法およびピックアップ方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5294358B2 (ja) * | 2012-01-06 | 2013-09-18 | 古河電気工業株式会社 | ウエハ加工用テープ及びこれを使用した半導体装置の製造方法 |
JP2013191781A (ja) * | 2012-03-14 | 2013-09-26 | Fuji Electric Co Ltd | 半導体製造装置および半導体製造装置の制御方法 |
JP6785162B2 (ja) * | 2017-01-12 | 2020-11-18 | 株式会社ディスコ | 分割装置 |
KR102371543B1 (ko) * | 2017-05-12 | 2022-03-07 | 세메스 주식회사 | 다이 픽업을 위한 정렬 좌표 설정 방법 및 이를 이용하는 다이 픽업 방법 |
CN109256354B (zh) * | 2017-07-14 | 2021-01-12 | 财团法人工业技术研究院 | 转移支撑件及转移模块 |
JP2019029650A (ja) * | 2017-07-26 | 2019-02-21 | 芝浦メカトロニクス株式会社 | 半導体チップのピックアップ装置、半導体チップの実装装置および実装方法 |
US20220293554A1 (en) | 2019-08-26 | 2022-09-15 | Lintec Corporation | Method of manufacturing laminate |
JP2022034947A (ja) * | 2020-08-19 | 2022-03-04 | キオクシア株式会社 | 半導体装置およびその製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6322741A (ja) * | 1986-06-13 | 1988-01-30 | アウデイ アクチエンゲゼルシヤフト | 特殊目的に使用される自動車 |
JP2005327970A (ja) * | 2004-05-17 | 2005-11-24 | Matsushita Electric Ind Co Ltd | 部品突上げ装置、部品実装装置、及び部品突上げ方法 |
JP2007042996A (ja) * | 2005-08-05 | 2007-02-15 | Renesas Technology Corp | 半導体装置の製造方法および半導体製造装置 |
JP2007115934A (ja) * | 2005-10-21 | 2007-05-10 | Matsushita Electric Ind Co Ltd | 電子部品突き上げ装置及び電子部品の供給方法 |
JP2009188157A (ja) * | 2008-02-06 | 2009-08-20 | Panasonic Corp | チップ剥離装置およびチップ剥離方法ならびにチップピックアップ装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050670A (ja) * | 2000-08-04 | 2002-02-15 | Toshiba Corp | ピックアップ装置及びピックアップ方法 |
JP2003264203A (ja) * | 2002-03-11 | 2003-09-19 | Hitachi Ltd | 半導体装置の製造方法 |
TWI225279B (en) * | 2002-03-11 | 2004-12-11 | Hitachi Ltd | Semiconductor device and its manufacturing method |
JP4574251B2 (ja) * | 2003-09-17 | 2010-11-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
MY151354A (en) * | 2007-10-09 | 2014-05-15 | Hitachi Chemical Co Ltd | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
-
2010
- 2010-03-31 JP JP2010080509A patent/JP2011216529A/ja active Pending
-
2011
- 2011-03-23 KR KR1020127025603A patent/KR20130009799A/ko not_active Application Discontinuation
- 2011-03-23 CN CN201180015691.7A patent/CN102822946B/zh not_active Expired - Fee Related
- 2011-03-23 WO PCT/JP2011/056890 patent/WO2011125492A1/ja active Application Filing
- 2011-03-29 TW TW100110675A patent/TWI427691B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6322741A (ja) * | 1986-06-13 | 1988-01-30 | アウデイ アクチエンゲゼルシヤフト | 特殊目的に使用される自動車 |
JP2005327970A (ja) * | 2004-05-17 | 2005-11-24 | Matsushita Electric Ind Co Ltd | 部品突上げ装置、部品実装装置、及び部品突上げ方法 |
JP2007042996A (ja) * | 2005-08-05 | 2007-02-15 | Renesas Technology Corp | 半導体装置の製造方法および半導体製造装置 |
JP2007115934A (ja) * | 2005-10-21 | 2007-05-10 | Matsushita Electric Ind Co Ltd | 電子部品突き上げ装置及び電子部品の供給方法 |
JP2009188157A (ja) * | 2008-02-06 | 2009-08-20 | Panasonic Corp | チップ剥離装置およびチップ剥離方法ならびにチップピックアップ装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013214739A (ja) * | 2012-03-30 | 2013-10-17 | Vesi Switzerland Ag | 金属箔から半導体チップを剥離する方法 |
WO2023100831A1 (ja) * | 2021-11-30 | 2023-06-08 | ボンドテック株式会社 | チップ周部剥離装置、チップ供給装置、チップ供給システム、チップ接合システム、ピックアップ装置、チップ周部剥離方法、チップ供給方法、チップ接合方法およびピックアップ方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102822946A (zh) | 2012-12-12 |
WO2011125492A1 (ja) | 2011-10-13 |
KR20130009799A (ko) | 2013-01-23 |
TWI427691B (zh) | 2014-02-21 |
TW201207922A (en) | 2012-02-16 |
CN102822946B (zh) | 2015-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2011216529A (ja) | 半導体装置の製造方法 | |
JP6348986B2 (ja) | ダイシングフィルムおよびダイシングダイボンディングフィルム | |
JP4430085B2 (ja) | ダイシング・ダイボンドフィルム | |
KR101749762B1 (ko) | 칩 보유 지지용 테이프, 칩 형상 워크의 보유 지지 방법, 칩 보유 지지용 테이프를 사용한 반도체 장치의 제조 방법, 및 칩 보유 지지용 테이프의 제조 방법 | |
KR102276498B1 (ko) | 반도체 장치의 제조 방법 및 반도체 장치 | |
KR101999856B1 (ko) | 적층 시트, 및 적층 시트를 이용한 반도체 장치의 제조 방법 | |
TW200846437A (en) | Thermosetting die bond film | |
US9754900B2 (en) | Thermosetting adhesive sheet and semiconductor device manufacturing method | |
JP5158864B2 (ja) | ウエハ加工用テープ | |
US10192769B2 (en) | Thermosetting adhesive sheet and semiconductor device manufacturing method | |
US10273386B2 (en) | Thermosetting adhesive sheet and semiconductor device manufacturing method | |
TW201510162A (zh) | 帶切割帶的晶粒接合膜及半導體裝置的製造方法 | |
JP2012023161A (ja) | 半導体装置を製造する際に用いるウエハ加工用シート及びその製造方法並びに半導体装置の製造方法 | |
JP5839931B2 (ja) | ウエハ加工用テープ及びその製造方法 | |
KR20220002256A (ko) | 돌멘 구조를 갖는 반도체 장치 및 그 제조 방법, 및, 지지편 형성용 적층 필름 및 그 제조 방법 | |
JP2013123002A (ja) | 積層シート、及び、積層シートを用いた半導体装置の製造方法 | |
JP6407060B2 (ja) | ウエハ加工用テープ | |
JP6655576B2 (ja) | 電子デバイスパッケージ用テープ | |
JP7494843B2 (ja) | ドルメン構造を有する半導体装置及びその製造方法、並びに、支持片形成用積層フィルム及びその製造方法 | |
TWI830905B (zh) | 具有支石墓結構的半導體裝置及其製造方法以及支持片形成用積層膜及其製造方法 | |
JP2013125924A (ja) | ウエハ加工用テープおよびその製造方法 | |
JP5566749B2 (ja) | ウエハ加工用テープ | |
WO2023157195A1 (ja) | ダイシングダイボンディングフィルム、及び、半導体装置を製造する方法 | |
JP2010251480A (ja) | 半導体装置の製造方法及びウエハ加工用テープ | |
JP6529650B2 (ja) | ウエハ加工用テープ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110712 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110829 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111025 |