JP2011193023A - 液体射出成形を用いた電子部品の製造方法及び電子部品 - Google Patents
液体射出成形を用いた電子部品の製造方法及び電子部品 Download PDFInfo
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- JP2011193023A JP2011193023A JP2011123494A JP2011123494A JP2011193023A JP 2011193023 A JP2011193023 A JP 2011193023A JP 2011123494 A JP2011123494 A JP 2011123494A JP 2011123494 A JP2011123494 A JP 2011123494A JP 2011193023 A JP2011193023 A JP 2011193023A
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- die
- electronic component
- curable liquid
- injection molding
- mold
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Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
【解決手段】a)シリコーンダイ装着接着剤組成物を基板に塗布すること、b)ダイ装着接着剤組成物を硬化させて、ダイ装着接着剤704を形成すること、c)ダイ装着接着剤の表面をプラズマ処理すること、d)半導体ダイの表面をプラズマ処理すること、e)半導体ダイのプラズマ処理された表面をダイ装着接着剤のプラズマ処理された表面と接触させること、f)半導体ダイを基板の表面にワイヤーボンドすること、g)半導体ダイがオーバーモールド701されるように、ステップf)の製造物上に硬化性液体シリコーン組成物を射出成形すること、及びh)ダイ装着接着剤の反対側の基板の表面上にはんだボール706を形成することを含む、液体射出成形を用いて電子部品700を製造する方法。
【選択図】図7
Description
本発明は、液体射出成形を用いて電子部品を製造する方法であって、
a)シリコーンダイ装着接着剤組成物を基板に塗布すること、
b)前記ダイ装着接着剤組成物を硬化させて、ダイ装着接着剤を形成すること、
c)前記ダイ装着接着剤の表面をプラズマ処理すること、
d)半導体ダイの表面をプラズマ処理すること、
e)前記半導体ダイのプラズマ処理された表面を前記ダイ装着接着剤のプラズマ処理された表面と接触させること、
f)前記半導体ダイを前記基板の表面にワイヤーボンドすること、
g)前記半導体ダイがオーバーモールドされるように、前記ステップf)の製造物上に硬化性液体シリコーン組成物を射出成形すること、及び
h)前記ダイ装着接着剤の反対側の前記基板の表面上にはんだボールを形成すること
を含み、
前記ステップg)が、
i)前記ステップf)の製造物を、開いたモールド内に置くこと、
ii)1〜80トンの型締力を加えることにより、前記モールドを閉じてモールドキャビティを形成すること、
iii)前記モールドキャビティを加熱すること、
iv)前記モールドキャビティ内に前記硬化性液体シリコーン組成物を射出成形して、前記基板上の半導体ダイをオーバーモールドすることであって、このステップiv)は、前記モールドキャビティ内に0.3〜7.0MPaの圧力をもたらすのに十分な射出速度で行われること、
v)前記モールドを開け、前記ステップiv)の製造物を取り除くこと、及び
任意に、vi)前記ステップv)の製造物をポストキュアさせること
を含むことによりワイヤー流れを最小限にし、
前記シリコーンダイ装着接着剤組成物と、液体射出成形のための前記硬化性液体シリコーン組成物とが、同様の硬化メカニズムを有する、電子部品の製造方法である。
特に指示のない限り、すべての量、比、及び百分率は重量である。下記は、本明細書中で用いられている定義のリストである。
「M」は、式RSiO3/2(ここでRは有機基、水酸基、又は水素原子などの一価基を表す)の単官能性シロキサン単位を意味する。
「D」は、式R2SiO2/2の二官能性シロキサン単位を意味する。
「T」は、式R3SiO3/2の三官能性シロキサン単位を意味する。
「Q」は、式SiO4/2の四官能性シロキサン単位を意味する。
「シリコーン」及び「シロキサン」は本明細書中では同義に用いられる。
「ワイヤー流れ(wire sweep)」とは、たとえば弧などのデザインされた形状の範囲外のワイヤーの運動である。ワイヤー流れが極端すぎると、ワイヤーの破損若しくはワイヤーの接触のいずれか、又は両者を招く。これらのいずれも、欠陥のある電子デバイスをもたらす。
本発明は、電子部品の製造方法に関する。この方法は、硬化性液体を半導体デバイス上に液体射出成形することを含み、そしてその硬化性液体が硬化してオーバーモールドを形成する。硬化性液体は半導体デバイス中の空間を満たし、基板を環境暴露から保護する気密封止を基板上に形成する。半導体デバイスは、半導体ダイがマウントされる基板、基板上にマウントされた半導体ダイ(半導体ダイはまだ基板と電気的に接続されていない)、又は基板上にマウントされた半導体ダイ(半導体ダイは基板と電気的に接続されている)を備えてもよい。半導体デバイスが半導体ダイを備える場合、半導体ダイは、いかなる簡便な手段によりダイ装着接着剤によって基板に装着されていてもよい。
a)ダイ装着接着剤組成物を基板に塗布すること、
b)半導体ダイをダイ装着接着剤組成物に装着すること、及び
c)ダイ装着接着剤組成物を硬化させて、ダイ装着接着剤を形成すること、
を含む方法によって基板に装着されてもよい。
a)ダイ装着接着剤組成物を基板に塗布すること、
b)ダイ装着接着剤組成物を硬化させて、ダイ装着接着剤を形成すること、
c)ダイ装着接着剤の表面をプラズマ処理すること、
d)半導体ダイの表面をプラズマ処理すること、及び
e)半導体ダイのプラズマ処理された表面をダイ装着接着剤のプラズマ処理された表面に接触させること、
を含む方法によって基板に装着されてもよい。
ダイ装着接着剤組成物は、スクリーン印刷及びステンシル印刷により例示される印刷方法などの、いかなる簡便な手段によって基板に塗布されてもよい。ダイ装着接着剤組成物は、硬化してシリコーンを形成する硬化性シリコーン組成物、硬化してシリコーン−有機コポリマーを形成する硬化性シリコーン−有機組成物、又は硬化して有機ダイ装着接着剤を形成する硬化性有機組成物を含んでもよい。
ダイ装着接着剤組成物は、硬化してダイ装着接着剤を形成する。ダイ装着接着剤組成物の硬化の態様は重要ではなく、縮合反応、付加反応、紫外線開始反応、及びフリーラジカル開始反応などの硬化メカニズムを含むことができる。ダイ装着接着剤組成物の硬化方法は重要ではなく、たとえば、加熱、放射線照射、又はこれらの組み合わせを含んでもよい。
ダイ装着接着剤は、硬化有機樹脂、硬化有機エラストマー、硬化有機ポリマー、又はこれらの組み合わせなどの、硬化有機物であってもよい。適した硬化有機樹脂には硬化エポキシ樹脂が含まれる。適した硬化有機エラストマーにはポリウレタンが含まれる。適した硬化有機ポリマーにはエポキシ、ポリイミド、ポリイミドコポリマー、及びこれらの組み合わせが含まれる。あるいは、ダイ装着接着剤は、ポリ(ジオルガノシロキサン/アミド)コポリマーにより例示されるポリ(ジオルガノシロキサン/有機)ブロックコポリマー及びシルアリーレンなどのシリコーン−有機コポリマーであってもよい。
a)ダイ装着接着剤の表面をプラズマ処理すること、
b)半導体ダイの表面をプラズマ処理すること、及び
c)その後、半導体ダイのプラズマ処理された表面をダイ装着接着剤のプラズマ処理された表面に接触させることによって行ってもよい。ダイ装着接着剤は、プラズマ処理後できる限り速やかに半導体ダイと接触させてもよい。あるいは、この方法は、ステップa)の後且つステップc)の前にダイ装着接着剤を保存すること、又はステップb)の後且つステップc)の前に半導体ダイを保存すること、又は両者を、任意にさらに含んでもよい。
半導体ダイは、液体射出成形法を用いてオーバーモールドされる。半導体ダイは、硬化性液体有機組成物、硬化性液体シリコーン−有機コポリマー組成物、又は硬化性液体シリコーン組成物を用いてオーバーモールドされてもよい。選ばれる硬化性液体組成物の種類は、用いられるダイ装着接着剤の種類を含む種々の要因に依存する。理論に縛られることを望まなければ、造形反応に用いられる硬化性液体と反応する反応基をダイ装着接着剤が含むとき、接着性が良くなるかもしれないと考えられる。たとえば、シリコーンダイ装着接着剤が用いられるとき、液体射出成形用硬化性液体と反応性のある基がダイ装着接着剤中に存在するというような同じ又は同様の硬化メカニズムを有する、硬化性液体シリコーン−有機コポリマー組成物又は硬化性液体シリコーン組成物を用いることが、液体射出成形には好ましい。あるいは、シリコーンダイ装着接着剤が用いられるとき、硬化性液体シリコーン組成物が液体射出成形にはより好ましい。
本発明の液体射出成形方法は、
i)開いたモールド(open mold)内に上述した半導体デバイスを置くこと、
ii)モールドを閉じて、半導体デバイスを覆うモールドキャビティを形成すること、
iii)モールドキャビティを加熱すること、
iv)モールドキャビティ内に上述した硬化性液体を射出成形して、半導体デバイスをオーバーモールドすること、
v)モールドを開け、且つステップiv)の製造物を取り除くこと、及び
任意に、vi)ステップv)の製造物をポストキュアさせることを含む。
上述の方法において用いられる基板は特に限定されない。選ばれる基板は、たとえば、製造される半導体デバイスの種類など、上述の方法の使用を含む種々の要因に依存する。基板は、回路基板(たとえば、プリント回路基板、PCB又はPWB)など、電子デバイス又は電子デバイスパッケージの製造において用いられるいかなる材料であることもできる。基板は、たとえば、電子デバイスパッケージにおいて一般的に用いられるセラミック基板、フレキシブル基板、又はリジッド基板であることができる。適した基板の例には、セラミック、金属、金属コート表面、ポリマー、及びこれらの組み合わせが含まれる。
上述の方法において用いられる半導体デバイスは特に限定されない。半導体は当該技術分野で既知であり、市販されている。たとえば、J. Kroschwitz編、「Electronic Materials」、Kirk-Othmer Encyclopedia of Chemical Technology、第4版、第9巻、219〜229頁、John Wiley & Sons、New York、1994年を参照。一般的な半導体には、シリコン、シリコン合金、及びガリウムヒ素が含まれる。半導体デバイスは、たとえば、ベアダイ、集積回路(IC)チップなどのチップ、又はウエハーなど、いかなる便利な形態を有することもできる。
28mmのスクリュー径で1〜90トンの型締圧で稼動できるエンジェル(Engel)シリコーン液体射出成形機(M/N:CC−90)が射出成形に用いられる。この装置及び類似の装置は、米国ペンシルバニア州ヨーク5番道路ボードロード3740のエンジェルマシナリー社(ENGEL Machinery Inc.)から市販されている。
18mmのスクリュー径で1〜27トンの型締圧で稼動できるアーブルグ(Arburg)シリコーン液体射出成形機(M/N:ALLROUNDER 270S 250−60)が射出成形に用いられる。この装置は、米国コネチカット州06111ニューイントンロックウェルロード125のアーブルグ社から市販されている。
米国ミシガン州マジソンハイツスティーブンソン(Stephenson)ハイウェイ29111のD−M−E社製のナンバー#2スチールで製造された標準モールドベース(カタログ:812A−13−13−2)は、1×6アレイパッケージを収容するように、米国カリフォルニア州92870プラセンティアイーストクラウザーアベニュー340のKipe Molds社によって製造されている。モールドは、ホットランナーシステムとしてデザインされている。
1×6アレイストリップを有し、下記の寸法の電子BGAストリップが製造される:長さ=187.5mm、幅=40.0mm、高さ=0.36mm又は0.61mm。
試料1〜3は、参考例2の装置、参考例3のモールド、及び参考例4のBGAストリップを用いて評価される。試料は、120℃の温度、30〜240秒の硬化時間で、10〜27トンの型締圧でモールド内で硬化される。結果を表1に示す。
Claims (11)
- 液体射出成形を用いて電子部品を製造する方法であって、
a)シリコーンダイ装着接着剤組成物を基板に塗布すること、
b)前記ダイ装着接着剤組成物を硬化させて、ダイ装着接着剤を形成すること、
c)前記ダイ装着接着剤の表面をプラズマ処理すること、
d)半導体ダイの表面をプラズマ処理すること、
e)前記半導体ダイのプラズマ処理された表面を前記ダイ装着接着剤のプラズマ処理された表面と接触させること、
f)前記半導体ダイを前記基板の表面にワイヤーボンドすること、
g)前記半導体ダイがオーバーモールドされるように、前記ステップf)の製造物上に硬化性液体シリコーン組成物を射出成形すること、及び
h)前記ダイ装着接着剤の反対側の前記基板の表面上にはんだボールを形成すること
を含み、
前記ステップg)が、
i)前記ステップf)の製造物を、開いたモールド内に置くこと、
ii)1〜80トンの型締力を加えることにより、前記モールドを閉じてモールドキャビティを形成すること、
iii)前記モールドキャビティを加熱すること、
iv)前記モールドキャビティ内に前記硬化性液体シリコーン組成物を射出成形して、前記基板上の半導体ダイをオーバーモールドすることであって、このステップiv)は、前記モールドキャビティ内に0.3〜7.0MPaの圧力をもたらすのに十分な射出速度で行われること、
v)前記モールドを開け、前記ステップiv)の製造物を取り除くこと、及び
任意に、vi)前記ステップv)の製造物をポストキュアさせること
を含むことによりワイヤー流れを最小限にし、
前記シリコーンダイ装着接着剤組成物と、液体射出成形のための前記硬化性液体シリコーン組成物とが、同様の硬化メカニズムを有する、電子部品の製造方法。 - 前記ダイ装着接着剤が、液体射出成形のための前記硬化性液体シリコーン組成物と反応性のある基を含む請求項1に記載の電子部品の製造方法。
- 前記硬化性液体シリコーン組成物が硬化して25〜1,000MPaの弾性率を有するオーバーモールドを形成し、且つ前記硬化性液体シリコーン組成物が、80〜3,000ポアズ(8〜300Pa・s)の粘度及び80〜240℃の温度において30〜120秒で硬化するような硬化プロファイルを有する請求項1に記載の電子部品の製造方法。
- 前記ステップii)が1〜27トンの型締力を加えることによって行われる請求項1に記載の電子部品の製造方法。
- 前記硬化性液体シリコーン組成物が硬化すると光学的に透明な材料を形成する請求項1に記載の電子部品の製造方法。
- 前記ステップiii)が80〜180℃の温度において行われる請求項1に記載の電子部品の製造方法。
- 前記ステップiv)が、前記モールドキャビティ内に0.6〜2.0MPaの圧力をもたらすのに十分な射出速度で行われる請求項1に記載の電子部品の製造方法。
- 前記硬化性液体シリコーン組成物の硬化生成物が100〜1,000MPaの弾性率を有する請求項5に記載の電子部品の製造方法。
- 基板と、前記基板の表面上のダイ装着接着剤と、前記ダイ装着接着剤に装着された半導体ダイと、前記半導体ダイを前記基板に接続するワイヤーボンドと、前記半導体ダイを覆うオーバーモールドと、前記ダイ装着接着剤の反対側の前記基板の表面上のはんだボールとを備える電子部品であって、請求項1〜8の何れか一項に記載の方法によって製造される電子部品。
- 液体射出成形を用いて電子部品を製造する方法であって、
a)シリコーンダイ装着接着剤組成物を基板に塗布すること、
b)半導体ダイを前記ダイ装着接着剤組成物に装着すること、
c)前記ダイ装着接着剤組成物を硬化させて、ダイ装着接着剤を形成すること、
d)前記半導体ダイを前記基板にワイヤーボンドすること、及び
e)前記ステップd)の製造物として形成された半導体デバイス上に硬化性液体シリコーン組成物を射出成形することであって、ワイヤー流れを最小限にする射出成形は、
i)開いたモールド内に前記半導体デバイスを置くこと、
ii)前記モールドを閉じて、モールドキャビティを形成すること、
iii)前記モールドキャビティを加熱すること、
iv)前記モールドキャビティ内に硬化性液体シリコーン組成物を射出成形して、前記半導体デバイスをオーバーモールドすること、
v)前記モールドを開け、前記ステップiv)の製造物を取り除くこと、及び
任意に、vi)前記ステップv)の前記製造物をポストキュアさせること
を含む方法によって行われ、
前記シリコーンダイ装着接着剤組成物と、液体射出成形のための前記硬化性液体シリコーン組成物とが、同様の硬化メカニズムを有し、前記硬化性液体シリコーン組成物が、80〜3,000ポアズ(8〜300Pa・s)の粘度を有し、且つ前記硬化性液体シリコーン組成物の硬化生成物が100〜1,000MPaの弾性率を有する、電子部品の製造方法。 - 前記ダイ装着接着剤が、液体射出成形のための前記硬化性液体シリコーン組成物と反応性のある基を含む請求項10に記載の電子部品の製造方法。
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Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007502020A (ja) * | 2003-08-08 | 2007-02-01 | ダウ・コーニング・コーポレイション | 液体射出成形を用いた電子部品の製造方法 |
US8071697B2 (en) | 2005-05-26 | 2011-12-06 | Dow Corning Corporation | Silicone encapsulant composition for molding small shapes |
EP1973963B1 (en) * | 2006-01-17 | 2013-06-19 | Dow Corning Corporation | Thermally stable transparent silicone resin compositions and methods for their preparation and use |
WO2007089340A1 (en) * | 2006-02-01 | 2007-08-09 | Dow Corning Corporation | Impact resistant optical waveguide and method of manufacture thereof |
EP1987084B1 (en) * | 2006-02-24 | 2014-11-05 | Dow Corning Corporation | Light emitting device encapsulated with silicones and curable silicone compositions for preparing the silicones |
JP5060060B2 (ja) * | 2006-03-17 | 2012-10-31 | 日立マクセル株式会社 | 金型及び金型を用いた成形方法 |
US20070241441A1 (en) * | 2006-04-17 | 2007-10-18 | Stats Chippac Ltd. | Multichip package system |
WO2008027280A2 (en) | 2006-08-28 | 2008-03-06 | Dow Corning Corporation | Optical devices and silicone compositions and processes fabricating the optical devices |
KR100825784B1 (ko) * | 2006-10-18 | 2008-04-28 | 삼성전자주식회사 | 휨 및 와이어 단선을 억제하는 반도체 패키지 및 그제조방법 |
WO2008109863A2 (en) * | 2007-03-07 | 2008-09-12 | Saint-Gobain Performance Plastics Corporation | Multi-layer tubes |
JP4991881B2 (ja) * | 2007-03-07 | 2012-08-01 | サン−ゴバン パフォーマンス プラスティックス コーポレイション | シリコーン組成物を含有する物品およびそれらの製造方法 |
CN101896334A (zh) * | 2007-12-28 | 2010-11-24 | 美国圣戈班性能塑料公司 | 增强的管材 |
DE102008026841A1 (de) | 2008-02-22 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
CN101540289B (zh) * | 2008-03-19 | 2012-12-19 | 飞思卡尔半导体公司 | 半导体集成电路封装及封装半导体集成电路的方法和模具 |
DE102008064956B3 (de) | 2008-07-29 | 2023-08-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
DE102008035255B4 (de) | 2008-07-29 | 2021-10-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
FI125526B (fi) * | 2008-08-25 | 2015-11-13 | Ge Embedded Electronics Oy | Sähköisiä komponentteja sisältävä paketoitu piirilevyrakenne ja menetelmä sähköisiä komponentteja sisältävän paketoidun piirilevyrakenteen valmistamiseksi |
KR101465161B1 (ko) * | 2008-09-04 | 2014-11-25 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
US7633160B1 (en) * | 2008-11-12 | 2009-12-15 | Powertech Technology Inc. | Window-type semiconductor package to avoid peeling at moldflow entrance |
US8325047B2 (en) | 2009-04-08 | 2012-12-04 | Sabic Innovative Plastics Ip B.V. | Encapsulated RFID tags and methods of making same |
JP5499514B2 (ja) * | 2009-05-08 | 2014-05-21 | セイコーエプソン株式会社 | 接合方法および接合体 |
KR101705262B1 (ko) | 2009-05-29 | 2017-02-09 | 다우 코닝 코포레이션 | 투명 실리콘 재료 및 광학 기기를 제조하기 위한 실리콘 조성물 |
TWI401773B (zh) * | 2010-05-14 | 2013-07-11 | Chipmos Technologies Inc | 晶片封裝裝置及其製造方法 |
KR102460328B1 (ko) * | 2015-08-17 | 2022-10-28 | 세키스이가가쿠 고교가부시키가이샤 | 반도체 장치 및 반도체 소자 보호용 재료 |
CN108133670B (zh) * | 2017-11-27 | 2020-09-18 | 长春希达电子技术有限公司 | 集成封装led显示模块封装方法及led显示模块 |
CN109927239B (zh) * | 2019-03-19 | 2021-11-19 | 东莞捷讯橡胶有限公司 | 液体硅胶二次成型、双射成型中部品表面处理方法 |
CN111863634B (zh) * | 2019-04-28 | 2023-10-27 | 无锡华润安盛科技有限公司 | 超薄封装结构的制作方法 |
WO2023178125A2 (en) * | 2022-03-18 | 2023-09-21 | 3D Glass Solutions, Inc. | Overmolding structures in glass |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007502020A (ja) * | 2003-08-08 | 2007-02-01 | ダウ・コーニング・コーポレイション | 液体射出成形を用いた電子部品の製造方法 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1204619A (en) * | 1967-04-26 | 1970-09-09 | Rca Corp Formerly Radio Corp O | Fabrication of semiconductor devices having molded enclosures |
US3808673A (en) * | 1971-03-17 | 1974-05-07 | Monsanto Co | Opto-isolator devices and method for the fabrication thereof |
US4032502A (en) * | 1975-10-10 | 1977-06-28 | Dow Corning Corporation | Organosiloxane compositions for liquid injection |
JPS53102361A (en) | 1977-02-18 | 1978-09-06 | Toray Silicone Co Ltd | Thermosetting resin composition |
US4327369A (en) | 1979-08-06 | 1982-04-27 | Hi-Tech Industries, Inc. | Encapsulating moisture-proof coating |
JPS61225253A (ja) | 1985-03-29 | 1986-10-07 | Toray Silicone Co Ltd | 熱硬化性樹脂組成物 |
JPS62205159A (ja) * | 1986-03-04 | 1987-09-09 | Toray Silicone Co Ltd | オルガノポリシロキサン組成物の硬化方法 |
JPS63183958A (ja) | 1986-09-04 | 1988-07-29 | Toray Silicone Co Ltd | 熱硬化性樹脂組成物 |
JPS6451467A (en) | 1987-08-21 | 1989-02-27 | Toray Silicone Co | Curable resin composition |
US4802873A (en) * | 1987-10-05 | 1989-02-07 | Planar Systems, Inc. | Method of encapsulating TFEL panels with a curable resin |
JP2522721B2 (ja) * | 1990-08-01 | 1996-08-07 | 信越化学工業株式会社 | オルガノポリシロキサン組成物及びそのゲル硬化物 |
JPH05138691A (ja) * | 1991-07-19 | 1993-06-08 | Toshiba Chem Corp | 液状樹脂射出成形金型 |
JP3337232B2 (ja) | 1991-12-26 | 2002-10-21 | 東レ・ダウコーニング・シリコーン株式会社 | シリコーン硬化物微粒子と無機質微粒子からなる粉体混合物の製造方法 |
US5592025A (en) * | 1992-08-06 | 1997-01-07 | Motorola, Inc. | Pad array semiconductor device |
JP3318408B2 (ja) | 1993-10-06 | 2002-08-26 | 東レ・ダウコーニング・シリコーン株式会社 | 粉状シリコーン硬化物およびその製造方法 |
JP3464527B2 (ja) | 1994-05-27 | 2003-11-10 | 東レ・ダウコーニング・シリコーン株式会社 | 硬化性樹脂組成物および硬化樹脂 |
JP3288185B2 (ja) | 1994-10-07 | 2002-06-04 | 日立化成工業株式会社 | 電子部品封止用エポキシ樹脂成形材料及びそれを用いた半導体装置 |
US5939775A (en) * | 1996-11-05 | 1999-08-17 | Gcb Technologies, Llc | Leadframe structure and process for packaging intergrated circuits |
EP1496094B1 (en) * | 1997-10-29 | 2008-08-13 | Hitachi Chemical Company, Ltd. | An adhesive sheet based on a siloxane-modified polyamideimide resin composition, and a CSP board and a semiconductor device produced by using the sheet |
JPH11254477A (ja) * | 1998-03-13 | 1999-09-21 | Mitsubishi Eng Plast Corp | 電気・電子部品の樹脂封止成形品の製造方法 |
US5933713A (en) | 1998-04-06 | 1999-08-03 | Micron Technology, Inc. | Method of forming overmolded chip scale package and resulting product |
JP3916026B2 (ja) * | 1998-10-05 | 2007-05-16 | 富士電機デバイステクノロジー株式会社 | 半導体素子のパッケージおよびその製造方法 |
WO2000047391A1 (en) | 1999-02-10 | 2000-08-17 | Cookson Semiconductor Packaging Materials | Method and apparatus for producing semiconductor preforms |
JP2000236040A (ja) * | 1999-02-15 | 2000-08-29 | Hitachi Ltd | 半導体装置 |
US20030082845A1 (en) * | 2000-01-14 | 2003-05-01 | Amkor Technology, Inc. | Package for multiple integrated circuits and method of making |
US6489178B2 (en) * | 2000-01-26 | 2002-12-03 | Texas Instruments Incorporated | Method of fabricating a molded package for micromechanical devices |
JP3956335B2 (ja) | 2000-03-06 | 2007-08-08 | シャープ株式会社 | 樹脂注型用金型を用いた半導体装置の製造方法 |
EP1149864A1 (en) * | 2000-04-28 | 2001-10-31 | STMicroelectronics S.r.l. | Polymeric composition for packaging a semiconductor electronic device and packaging obtained therefrom |
US20020110956A1 (en) * | 2000-12-19 | 2002-08-15 | Takashi Kumamoto | Chip lead frames |
US6793759B2 (en) * | 2001-10-09 | 2004-09-21 | Dow Corning Corporation | Method for creating adhesion during fabrication of electronic devices |
US6654248B1 (en) * | 2002-10-25 | 2003-11-25 | Lsi Logic Corporation | Top gated heat dissipation |
-
2004
- 2004-07-29 JP JP2006523225A patent/JP2007502020A/ja active Pending
- 2004-07-29 CN CNB2004800256065A patent/CN100468666C/zh not_active Expired - Fee Related
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- 2004-07-29 KR KR1020067002725A patent/KR20060058108A/ko not_active Application Discontinuation
- 2004-07-29 EP EP04779967A patent/EP1661174A1/en not_active Ceased
- 2004-07-29 WO PCT/US2004/025050 patent/WO2005017995A1/en active Application Filing
- 2004-08-06 TW TW093123698A patent/TWI353620B/zh not_active IP Right Cessation
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- 2011-06-01 JP JP2011123494A patent/JP2011193023A/ja active Pending
-
2014
- 2014-11-10 JP JP2014227630A patent/JP2015065451A/ja not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007502020A (ja) * | 2003-08-08 | 2007-02-01 | ダウ・コーニング・コーポレイション | 液体射出成形を用いた電子部品の製造方法 |
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US8609472B2 (en) | 2013-12-17 |
WO2005017995A1 (en) | 2005-02-24 |
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US8017449B2 (en) | 2011-09-13 |
US20110221060A1 (en) | 2011-09-15 |
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JP2015065451A (ja) | 2015-04-09 |
EP1661174A1 (en) | 2006-05-31 |
TWI353620B (en) | 2011-12-01 |
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