CN1846303A - 利用液体注塑制造电子元件的方法 - Google Patents

利用液体注塑制造电子元件的方法 Download PDF

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Publication number
CN1846303A
CN1846303A CNA2004800256065A CN200480025606A CN1846303A CN 1846303 A CN1846303 A CN 1846303A CN A2004800256065 A CNA2004800256065 A CN A2004800256065A CN 200480025606 A CN200480025606 A CN 200480025606A CN 1846303 A CN1846303 A CN 1846303A
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China
Prior art keywords
mould
small pieces
semiconductor device
product
substrate
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CN100468666C (zh
Inventor
T·程
M·多布采勒夫斯基
C·温戴特
D·索罗门
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Dow Silicones Corp
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Dow Corning Corp
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Abstract

制造电子元件的方法包括重叠注塑半导体器件的液体注塑方法。该液体注塑方法包括：i)在敞模内放置半导体器件，ii)封闭模具，形成模具空腔，iii)加热该模具空腔，iv)注塑可固化的液体到模具空腔内，以重叠注塑半导体器件，v)打开模具并取出步骤iv)中的产物，和任选地vi)后固化步骤v)的产物。该半导体器件可具有通过小片连接粘合剂连接到基底上的集成电路。

Description

利用液体注塑制造电子元件的方法
技术领域
[0001]本发明涉及制造电子元件的方法。更特别地，本发明涉及包括液体注塑方法的制造电子元件的方法。液体注塑方法可用于在基底上的半导体小片例如集成电路上提供重叠注塑体。
背景技术
[0002]重叠注塑集成电路的几种方法包括模版或筛网印刷、阻塞和填充(dam and fill)以及压铸。然而，本领域已知的重叠注塑方法具有缺点。例如，模版或筛网印刷方法可能较慢和可产生高的浪费，例如高达70％。阻塞和填充方法是两步方法和可导致较低的产量。压铸方法可具有高的浪费，例如浪费高达50-70％的模塑材料。仍继续需要具有较高效率、较低温度和较少浪费产生的制造电子元件的方法。
发明概述
[0003]本发明涉及液体注塑方法和利用该液体注塑方法制造电子元件的方法。
发明详述
[0004]所有用量、比例和百分数以重量计，除非另有说明。以下是此处所使用的一系列定义。
定义
[0005]“M”是指化学式RSiO3/2的单官能的硅氧烷单元，其中R代表单价基团，例如有机基团、羟基或氢原子。
[0006]“D”是指化学式R2SiO2/2的双官能的硅氧烷单元。
[0007]“T”是指化学式R3SiO3/2的三官能的硅氧烷单元。
[0008]“Q”是指化学式SiO4/2的四官能的硅氧烷单元。
[0009]“硅酮”和“硅氧烷”在此处可互换使用。
[0010]“线材偏转(wire sweep)”是线材移动到所设计形状例如弧形以外。若线材偏转太极端，则它可导致线材断裂或者线材接触或者这二者。这些中的任何一种将导致缺陷的电子器件。
本发明的方法
[0011]本发明涉及制造电子元件的方法。该方法包括在半导体器件上液体注塑可固化的液体，其中可固化的液体固化形成重叠注塑体。可固化的液体填充在半导体器件内的孔隙并在基底上形成气密封接，从而保护它以免暴露于环境。半导体器件可包括半导体小片将安装在其上的基底，安装在基底上的半导体小片，其中半导体小片仍电连接到基底上，或者半导体小片安装在基底上，其中半导体小片电连接到基底上。当半导体器件包括半导体小片时，半导体小片可通过任何方便的方式通过小片连接粘合剂连接到基底上。
[0012]例如，可通过包括下述的方法将半导体小片连接到基底上：
a)施加小片连接粘合剂组合物到基底上，
b)将半导体小片连接到小片连接粘合剂组合物上，和
c)固化该小片连接粘合剂组合物，形成小片连接粘合剂。
[0013]或者，可通过包括下述的方法将半导体小片连接到基底上：
a)施加小片连接粘合剂组合物到基底上，
b)固化该小片连接粘合剂组合物，形成小片连接粘合剂，
c)等离子体处理小片连接粘合剂的表面，
d)等离子体处理半导体小片的表面，和
e)使半导体小片的等离子体处理表面与小片连接粘合剂的等离子体处理表面接触。
[0014]这些方法可任选地进一步包括在将半导体小片通过小片连接粘合剂连接到基底上之后，电连接半导体小片到基底上的步骤。可例如通过引线接合，将半导体小片电连接到基底上，其中小片连接粘合剂不提供半导体小片与基底之间的电连接。
[0015]通过在半导体小片上注塑可固化的液体，重叠注塑半导体小片，其中所述半导体小片可以被引线接合或者可以没有。
施加小片连接粘合剂组合物
[0016]可通过任何方便的方式，例如以筛网印刷和模版印刷为例子的印刷工艺，将小片连接粘合剂组合物施加到基底上。小片连接粘合剂组合物可包括将固化形成硅氧烷的可固化的硅氧烷组合物，将固化形成硅氧烷-有机共聚物的可固化的硅氧烷-有机组合物，或者将固化形成有机小片连接粘合剂的可固化的有机组合物。
小片连接粘合剂
[0017]小片连接粘合剂组合物固化形成小片连接粘合剂。固化小片连接粘合剂组合物的模式不是关键的，和可包括诸如缩合反应、加成反应、紫外辐射线引发的反应和自由基引发的反应之类的固化机理。固化小片连接粘合剂组合物的方法不是关键的，和可包括例如加热，曝光于辐射线下，或者其结合。
小片连接粘合剂可以是固化的有机物，例如固化的有机树脂，固化的有机弹性体，固化的有机聚合物，或其结合。合适的固化的有机树脂包括固化的环氧树脂。合适的固化的有机弹性体包括聚氨酯。合适的固化的有机聚合物包括环氧、聚酰亚胺、聚酰亚胺共聚物及其结合。或者，小片连接粘合剂可以是硅氧烷-有机共聚物，例如以聚(二有机硅氧烷/酰胺)共聚物和硅杂亚芳基(silarylene)为例子的聚(二有机硅氧烷/有机)嵌段共聚物。
[0018]或者，小片连接粘合剂可以是固化的硅氧烷，例如固化的硅氧烷树脂，固化的硅氧烷弹性体，固化的硅氧烷橡胶，或其结合。合适的固化的硅氧烷树脂包括T、DT、MT、MQ树脂及其结合。
[0019]可通过任何方便的方式，例如在WO2003/41130中所述的那些，进行等离子体处理小片连接粘合剂的表面。“等离子体处理”是指将基底暴露于通过外部施加的能量形式活化的气态下，和包括但不限于电晕放电、电介质阻挡放电、火焰、低压辉光放电和大气压辉光放电处理。在等离子体处理中所使用的气体可以是空气、氨气、氩气、二氧化碳、一氧化碳、氦气、氢气、氪气、氙气、氮气、一氧化二氮、氧气、臭氧、水蒸气、其结合等。或者，可使用其它反应性更大的气体或蒸气，其中所述其它反应性更大的气体或蒸气或者在工艺应用压力下为正常的气体状态，或者用合适的装置从液态被气化，例如六甲基二硅氧烷、环聚二甲基硅氧烷、环聚氢化甲基硅氧烷、环聚氢化甲基-共-二甲基硅氧烷、反应性硅烷及其结合。
[0020]可通过下述进行小片连接：
a)等离子体处理小片连接粘合剂的表面，
b)等离子体处理半导体小片的表面，和
c)之后使半导体小片的等离子体处理的表面与小片连接粘合剂的等离子体处理表面接触。可在等离子体处理之后尽可能切合实际地使小片连接粘合剂与半导体小片接触。或者，该方法可任选地进一步包括：在步骤a)之后和在步骤c)之前储存小片连接粘合剂，或者在步骤b)之后和步骤c)之前储存半导体小片，或者这二者。
[0021]可同时或者以任何顺序按序地进行步骤a)和b)。可在小片连接粘合剂或者半导体或者这二者的所有或一部分表面上进行等离子体处理。
[0022]小片连接粘合剂可在等离子体处理之后储存至少0，或者至少1，或者至少2小时。小片连接粘合剂可在等离子体处理之后储存最多48，或者最多24，或者最多8，或者最多4小时。可独立地对小片连接粘合剂和半导体使用相同的储存条件。
[0023]可通过在室温下进行步骤c)数秒钟，从而获得粘合。或者，可在升高的温度、升高的压力，或者这二者下进行步骤c)。步骤c)所选的确切条件将取决于各种因素，其中包括该方法的特定应用。然而，在接触步骤过程中的温度可以是至少15℃，或者至少20℃，或者至少100℃。在接触过程中的温度可以是最多400℃，或者最多220℃。在接触过程中的压力可以是最多10兆帕，或者最多1兆帕。在接触过程中的压力可以是至少0.1兆帕。接触时间可以是至少0.1秒，或者至少1秒，或者至少5秒，或者至少20秒。接触时间可以是最多24小时，或者最多12小时，或者最多30分钟，或者最多30秒。
[0024]可通过任何方便的方式，例如通过使用导电的小片连接粘合剂或者通过引线接合，从而将集成电路电连接到基底上。引线接合方法是本领域已知的，例如，参见Charles A.Harper，Ed.，“PackageAssembly Process”，Electronic Packaging and InterconnectionHandbook，2nd.，pp.6.66-6.77，McGraw-Hill，New York，1997。
液体注塑用组合物
[0025]使用液体注塑方法重叠注塑半导体小片。可使用可固化的液体有机组合物，可固化的液体硅氧烷-有机聚合物组合物，或可固化的液体硅氧烷组合物，来重叠注塑半导体小片。所选的可固化的液体组合物的类型取决于各种因素，其中包括所使用的小片连接粘合剂的类型。在不希望受到理论束缚的情况下，认为当小片连接粘合剂含有反应性基团时，可改进粘合，其中制模(moldmaking)所使用的可固化液体与所述反应性基团反应。例如，当使用硅氧烷小片连接粘合剂时，对于液体注塑来说，优选使用可固化的液体硅氧烷-有机共聚物组合物，或者可固化的液体硅氧烷组合物，其具有相同或类似的固化机理，以便对用于液体注塑的可固化的液体具有反应性的基团存在于小片连接粘合剂中。或者，当使用硅氧烷小片连接粘合剂时，对于液体注塑来说，更优选可固化的液体硅氧烷组合物。
[0026]合适的可固化的液体有机组合物的实例包括可固化的液体环氧化物，可固化的液体氰酸酯及其结合。合适的可固化的液体硅氧烷-有机共聚物组合物的实例包括固化形成聚(二有机硅氧烷/有机)嵌段共聚物如聚(二有机硅氧烷/酰胺)共聚物的可固化的液体组合物。
[0027]合适的可固化的液体硅氧烷组合物包括可缩合反应固化的液体硅氧烷组合物，可加成反应固化的液体硅氧烷组合物，可紫外辐射线引发的固化的液体硅氧烷组合物，和可自由基引发的固化的液体硅氧烷组合物。
[0028]可使用可加成反应固化的液体硅氧烷组合物，以便与其它类型的可固化的液体硅氧烷组合物相比，最小化当固化时形成的副产物。可加成反应固化的液体硅氧烷组合物可包括(A)每一分子平均具有至少两个链烯基的有机聚硅氧烷，(B)每一分子平均具有至少两个与硅原子键合的氢原子的有机氢化聚硅氧烷，和(C)氢化硅烷化催化剂。可加成反应固化的液体硅氧烷组合物可进一步包括选自(D)填料，(E)填料处理剂，(F)催化剂抑制剂，(G)溶剂，(H)粘合促进剂，(I)光敏剂，(J)颜料，(K)增韧剂中的一种或多种任选的成分及其结合。
[0029]组分(D)是填料。合适的填料包括增强填料，例如氧化硅(例如热解法二氧化硅，煅制二氧化硅和研磨二氧化硅)，氧化钛，及其结合。或者，组分(D)可导热、导电或这二者。或者，组分(D)可包括传导和非传导填料的结合。组分(D)可包括DRAM级填料，或DRAM级填料与比DRAM级填料纯度低的填料的混合物。组分(K)可包括长链α-烯烃，例如具有14或更多个碳原子的烯烃。
[0030]可固化的液体可以是单份组合物或多份组合物，例如两份组合物。当可加成反应固化的液体硅氧烷组合物配制为单份组合物时，可包括氢化硅烷化催化剂抑制剂(F)。当可加成反应固化的液体硅氧烷组合物配制为多份组合物时，可独立于任何氢化硅烷化催化剂储存任何含S-H的成分。
[0031]配制可固化的液体，以便在液体注塑条件下具有使线材偏转最小化的粘度。在不希望受到理论束缚的情况下，认为太高的粘度有助于线材偏转，然而，太低的粘度可能使得可固化液体从模具中泄漏。对于一些可加成反应固化的液体硅氧烷组合物来说，粘度可以是80-3000泊。
[0032]可配制可固化的液体，以便在液体注塑条件下具有使线材偏转最小化的固化速度。在不希望受到理论束缚的情况下，认为太高的固化速度可能有助于线材偏转，然而，太低的固化速度可能使得该工艺效率低。对于一些可加成反应固化的液体硅氧烷组合物来说，在80-240℃下，固化速度可以是30-120秒，或者在80-180℃下为30-60秒，或者在80-150℃下为30-60秒。
[0033]可配制可固化的液体，以固化形成重叠注塑体，所述重叠注塑体的模量和热膨胀系数(CTE)使得电子器件能通过如JEDECStandard J-STD-020B中所定义的最小Moisture ResistanceTesting，Level 2A。可配制可固化的液体，以固化形成重叠注塑体，所述重叠注塑体的模量和CTE进一步使得该电子器件能通过JEDECStandard JESD22-A，104-B，Condition B中所定义的JEDECTemperature Cycle Test，并在完成制造半导体器件之后提供在引线接合的半导体小片内线材的充分保护。在不希望受到理论束缚的情况下，认为若模量太低，则在完成制造电子元件之后，线材可能不具有充足的保护。对于一些可加成反应固化的液体硅氧烷组合物来说，模量可以是25-1000兆帕。对于一些有机可固化的液体组合物来说，模量可以最多3000兆帕。还认为若CTE太高和模量太低，则在完成制造电子元件之后，线材可能不具有充足的保护。此外，认为若CTE和模量均太高，则在线材上的应力可能太高，从而导致降低的可靠度。对于一些可加成反应固化的液体硅氧烷组合物来说，CTE可以是80-300ppm/℃，或者80-150ppm/℃，或者80-100ppm/℃。对于一些可固化的有机组合物，例如液体环氧化物来说，CTE可以是10-30ppm/℃。
液体注塑方法
[0034]本发明的液体注塑方法包括：
i)在敞模内放置以上所述的半导体器件，
ii)封闭模具，形成容纳半导体器件的模具空腔，
iii)加热该模具空腔，
iv)注塑如上所述的可固化的液体到模具空腔内，以重叠注塑半导体器件，
v)打开模具并取出步骤iv)中的产物，和
任选地vi)后固化步骤v)的产物。
[0035]可通过施加合模力到模具上，从而进行步骤ii)。在不希望受到理论束缚的情况下，认为若合模力太高，则半导体在液体注塑过程中被损坏，然而，若合模力太低，则可固化的液体可能泄漏出模具。对于一些可加成反应固化的液体硅氧烷组合物来说，可通过向模具施加1-80，或者1-27吨，或者10-25吨的合模力，从而进行步骤ii)。可在80-240℃下30-120秒，或者在80-180℃下30-60秒，或者在80-150℃下30-60秒的时间与温度下进行步骤iii)。
[0036]可在足以在模具空腔内提供0.3-7.0MPa的压力的注塑速度下进行步骤iv)。可使用可商购的液体注塑设备，例如获自Newington，CT，U.S.A.的Arburg，Inc.的液体注塑装置，Model No.270S250-60，和获自Placentia，CA，U.S.A.的Kipe Molds，Inc.，的模具，进行步骤iv)。液体注塑设备的确切结构取决于各种因素，其中包括模具的确切结构和半导体器件。
[0037]图1是在本发明方法中使用的液体注塑工艺设备100的示意图。该液体注塑工艺设备100包括如上所述的两份可固化的液体硅氧烷组合物中这两份的供料体系101。从供料罐102、103中供应这两份到混合这两份的静态混合机104中。所得可固化的液体硅氧烷组合物进入挤出机105并强制进入模具106内，通过入口107到达进料系统(未示出)。模具106可具有如下所述和正如图2a-4b(其代表沿着横截面线108拍摄的横截面视图)以及图5-6(其代表沿着横截面线109拍摄的横截面视图)所示的各种结构。
[0038]或者，单份可固化的液体可以从供料罐102(绕过静态混合机104)直接供入到挤出机105内。
[0039]图2a是沿着在图1的液体注塑工艺设备100中使用的模具106的线108拍摄的横截面视图。图2a示出了处于其敞开位置形式的模具。模具106是三部分模具，其中第一部分201包含入口107和注道210。第二部分202包含流道系统211。第三部分是容纳基底204的模具保持器203，其中所述基底204具有在模具空腔206内的连接到基底204表面上的半导体小片205。可固化的液体在半导体小片205的顶部经浇口207进入模具空腔206内。图2b是在图2a中以其密封位置形式示出的模具106。在图2a和2b中的模具106包括用于流道系统211的加热器(未示出)。
[0040]图3a是沿着在图1的液体注塑工艺设备100中使用的备用模具106的线108拍摄的横截面视图。图3a示出了处于其敞开位置形式的模具。模具106是两部分模具，其中第一部分301包含入口107、注道310和流道系统311。第二部分是容纳基底304的模具保持器303，其中所述基底304具有在模具空腔306内的连接到基底表面上的半导体小片305。可固化的液体在半导体小片305的顶部经浇口307进入模具空腔306内。图3b是在图3a中以其密封位置形式示出的模具106。在图3a和3b中的模具106包括用于注道310和流道系统311的冷却器，例如制冷水系统(未示出)。
[0041]图4a是沿着在图1的液体注塑工艺设备100中使用的备用模具106的线108拍摄的横截面视图。图4a示出了处于其敞开位置形式的模具106。这一模具106是两部分模具，其中第一部分401包含模具空腔406和流道系统(未示出)。模具保持器403容纳基底404，其中所述基底404具有在模具空腔406内的连接到基底404表面上的半导体小片405。模具保持器403包含入口107和注道410。图4b示出了在图4a中处于密封位置形式的模具106。
[0042]可使用图1中的模具106，将可固化的液体用门控制(gate)成不同结构。例如，可在图5所示的芯片侧面处或者在图6所示的芯片顶部之上用门控制可固化的液体。
[0043]图5是沿着图1的模具106的线109拍摄的横截面视图。模具106包括注道410、流道411和浇口407。浇口407将可固化液体在模具空腔406内的每一半导体小片(未示出)的侧面拐角处引入到模具空腔406内。
[0044]图6示出了沿着图1的模具106的线109拍摄的横截面视图。模具106包括注道410、流道411和浇口407。浇口407将可固化液体在模具空腔406内的每一半导体小片(未示出)的顶部处引入到模具空腔406内。
[0045]在步骤iv)中所使用的模具的确切结构取决于各种因素，其中包括半导体器件的类型和所选的可固化液体。在不希望受到理论束缚的情况下，认为当半导体器件是引线接合到基底上的半导体小片，例如图7所示的半导体器件时，使用下述模具是合适的，所述模具具有为在模具空腔内的每一半导体器件顶部中间处引入可固化液体到模具空腔内而构造的浇口。在不希望受到理论束缚的情况下，认为当半导体器件是非引线接合到基底上的半导体小片，例如图8所示的半导体器件时，使用下述模具是合适的，所述模具具有为在模具空腔内的每一半导体器件的侧面拐角处引入可固化液体到模具空腔内而构造的浇口。
[0046]图7示出了通过本发明方法制造的电子元件700。该电子元件700包括通过小片连接粘合剂704连接到电路板705表面上的集成电路703。集成电路703通过线材702电连接到电路板705上。使用将固化形成重叠注塑体701的可固化的液体，在集成电路703上进行液体注塑。焊球706连接到与小片连接粘合剂704相对的电路板705的表面上。
[0047]图8示出了通过本发明方法制造的备用电子元件。器件800包括通过小片连接粘合剂804既固定又电连接到电路板805表面上的集成电路803。小片连接粘合剂804含有导电材料802，所述导电材料802将集成电路803电连接到电路板805上。使用固化形成重叠注塑体801的可固化液体，在集成电路803上进行液体注塑。焊球806连接到与小片连接粘合剂803相对的电路板805的表面上。
[0048]图9示出了通过本发明方法制造的备用电子元件900。电子元件900包括通过小片连接粘合剂904固定到电路板905表面上的集成电路903。在图7所示结构的备用结构中，集成电路903通过线材902电连接到电路板905上。使用将固化形成重叠注塑体901的可固化液体，在集成电路903上进行液体注塑。使用独立的封装剂910来保护线材避免损坏。焊球906连接到与小片连接粘合剂904相对的电路板905的表面上。
基底
[0049]没有具体地限制以上所述的方法中所使用的基底。所选基底取决于各种因素，其中包括以上所述的方法中使用的例如待制造的半导体器件类型。基底可以是在制造电子器件或者电子器件的封装件，例如电路板(例如印刷电路板，PCB或PWB)中使用的任何材料。基底可以是例如在电子器件封装中常用的陶瓷基底，软质基底或硬质基底。合适的基底的实例包括陶瓷，金属，金属涂布的表面，聚合物及其结合。
[0050]金属和金属涂层包括铝、铬、铜、金、铅、镍、铂、焊剂、不锈钢、锡、钛、其合金和含大于一种金属的组合。
[0051]陶瓷包括氮化铝、氧化铝、碳化硅、氧化硅、氧氮化硅及其结合，和其它；或者氮化铝、氧化铝、碳化硅、氧氮化硅及其结合。
[0052]聚合物包括苯并环丁烯、双马来酰亚胺，氰酸酯、环氧、聚苯并唑、聚碳酸酯、聚酰亚胺、聚甲基丙烯酸甲酯、聚苯醚、聚偏氯乙烯及其结合。
半导体
[0053]没有具体地限制在以上所述的方法中使用的半导体器件。半导体是本领域已知的和可商购，例如，参见J.Kroschwitz，ed.，“Electronic Materials”，Kirk-Othmer Encyclopedia of ChemicalTechnology，4th ed.，vol.9，pp.219-229，John Wiley & Sons，NewYork，1994。常见的半导体包括硅、硅合金和砷化镓。半导体器件可具有任何方便的形式，例如裸片，芯片例如集成电路(IC)芯片或晶片。
实施例
[0054]对于熟练本领域的技术人员来说，这些实施例是用于阐述本发明，和不打算限制权利要求中列出的本发明的范围。
参考实施例1-注塑设备
[0055]可在1至90吨的合模压力下操作且螺杆直径为28mm的Engel Silicone Liquid Injection Molding Machine(M/N：CC-90)用于注塑。这一设备和相当的设备可商购于ENGEL Machinery Inc.，3740Board Road，Rd.#5，York，Pennsylvania，U.S.A.。
参考实施例2-注塑设备
[0056]可在1至27吨的合模压力下操作且螺杆直径为18mm的Arburg Silicone Liquid Injection Molding Machine(M/N：ALLROUNDER 270S 250-60用于注塑。这一设备可商购于ARBURG，Inc.，125 Rockwell Road，Newington，CT 06111，U.S.A.。
参考实施例3-模具
[0057]由Kipe Molds，Inc.，340 East Crowther Avenue，Placentia，CA92870，U.S.A.用No.#2号钢(获自D-M-E Co.，29111Stephenson Highway，Madison Heights，MI 48071，USA)制造标准模座(产品目录：812A-13-13-2)，以容纳1×6阵列包装件。设计该模具作为热流道系统。
参考实施例4-1×6BGA条
[0058]制造具有1×6阵列条(array strip)和下述尺寸的电子BGA条：长度＝187.5mm，宽度＝40.0mm，高度＝0.36mm或0.61mm。
实施例1-3
[0059]采用参考实施例2的设备，参考实施例3的模具，和参考实施例4的BGA条，评价样品1-3。在介于10-27吨的合模压力下在模具中固化样品，其中在120℃的温度下的固化时间为30-240秒。结果在表1中。
表1
  样品   可加工性，注塑   粘合
  1   是   差
  2   是   好
  3   是   差
[0060]样品1是借助氢化硅烷化固化的树脂状硅氧烷基质。一旦固化，它将形成光学透明的材料。样品1是97重量份树脂/交联剂A和3重量份催化剂/抑制剂A的组合。树脂/交联剂A是81份乙烯基封端的倍半硅氧烷树脂、17份1，4-双(二甲基甲硅烷基)苯、1份羟基封端的二甲基，甲基乙烯基硅氧烷与(环氧丙氧丙基)三甲氧基硅烷的反应产物，和1份由乙二醇与原硅酸四乙酯反应得到的产物的组合。催化剂/抑制剂A是3.6份二乙烯基四甲基二硅氧烷和三苯基膦铂络合物，93.3份甲苯，3.0份三苯基膦和0.1份四甲基二乙烯基二硅氧烷的组合。
[0061]样品2是可商购的可加成反应固化的硅氧烷组合物；DOWCORNING6820Microelectronic Encapsulant(其商购于Dow CorningCorporation of Midland，Michigan，U.S.A.)。
[0062]样品3是40份样品1的组合物和60份煅制二氧化硅的组合。
[0063]样品1-3表明，不同的液体硅氧烷组合物适合于液体注塑工艺。样品2表明可获得粘合。
附图
[0064]图1是在本发明方法中使用的液体注塑工艺设备的示意图。
[0065]图2a是沿着在图1的液体注塑工艺设备100中使用的模具106的线108拍摄的横截面视图。图2a示出了处于其敞开位置形式的模具106。图2b是以其密封位置形式示出的模具106。
[0066]图3a是沿着在图1的液体注塑工艺设备100中使用的备用模具106的线108拍摄的横截面视图。图3a示出了处于其敞开位置形式的模具。图3b是以其密封位置形式示出的模具106。
[0067]图4a是沿着在图1的液体注塑工艺设备100中使用的备用模具106的线108拍摄的横截面视图。图4a示出了处于其敞开位置形式的模具106。图4b是以其密封位置形式示出的模具106。
[0068]图5是沿着图1的模具106的线109拍摄的横截面视图。
[0069]图6示出了沿着图1的模具106的线109拍摄的横截面视图。
[0070]图7示出了通过本发明方法制造的电子元件700。
[0071]图8示出了通过本发明方法制造的备用电子元件。
[0072]图9示出了通过本发明方法制造的备用电子元件900。
参考标记
100  液体注塑工艺    401  第一部分
101  供料系统        403  模具保持器
102  供料罐          404  基底
103  供料罐          405  半导体小片
104  静态混合机      406  模具空腔
105  挤出机          407  浇口
106  模具            410  注道
107  入口            411  流道
108  横截面线        700  电子元件
109  横截面线        701  重叠注塑体
201  第一部分        702  线材
202  第二部分        703  集成电路
203  模具保持器      704  小片连接粘合剂
204  基底            705  电路板
205  半导体小片      706  焊球
206  模具空腔        800  电子元件
210  注道            801  重叠注塑体
211  流道系统        802  导电材料
301  第一部分        803  集成电路
303  模具保持器      804  小片连接粘合剂
304  基底            805  电路板
305  半导体小片      806  焊球
306  模具空腔        900  电子元件
307  浇口            901  重叠注塑体
310  注道            902  线材
311  流道系统        903  集成电路
                     904  小片连接粘合剂
                     905  电路板
                     906  焊球
                     910  封装剂

Claims (16)

1.一种方法，它包括：
a)施加小片连接粘合剂组合物到基底上，
b)固化该小片连接粘合剂组合物，形成小片连接粘合剂，
c)等离子体处理小片连接粘合剂的表面，
d)等离子体处理半导体小片的表面，和
e)使半导体小片的等离子体处理表面与小片连接粘合剂的等离子体处理表面接触，
任选地f)将半导体小片引线接合到基底上，
g)在步骤f)的产物上注塑可固化的液体，
任选地h)在与小片连接粘合剂相对的基底表面上形成焊球。
2.权利要求1的方法，其中小片连接粘合剂包括硅氧烷小片连接粘合剂。
3.权利要求1的方法，其中可固化的液体包括硅氧烷组合物。
4.权利要求3的方法，其中硅氧烷组合物固化形成模量为25-1000兆帕的重叠注塑体，和其中该硅氧烷组合物的粘度为80-3000泊和固化曲线使得该硅氧烷组合物在80-240℃的温度下在30-120秒内固化。
5.权利要求4的方法，其中步骤g)包括：
i)在敞模内放置步骤e)的产物或者步骤f)的产物，
ii)封闭模具，形成模具空腔，
iii)加热该模具空腔，
iv)注塑可固化的液体到模具空腔内，以在基底上重叠注塑半导体小片，
v)打开模具并取出步骤iv)中的产物，和
任选地vi)后固化步骤v)的产物。
6.通过权利要求1的方法制备的电子元件。
7.一种方法，它包括：
i)在敞模内放置半导体器件，
ii)封闭模具，形成模具空腔，
iii)加热该模具空腔，
iv)注塑可固化的液体到模具空腔内，以重叠注塑半导体器件，
v)打开模具并取出步骤iv)中的产物，和
任选地vi)后固化步骤v)的产物。
8.权利要求7的方法，其中半导体器件包括基底，小片连接粘合剂和集成电路，其中集成电路通过小片连接粘合剂连接到基底表面上，和其中集成电路引线接合到基底表面上。
9.权利要求7的方法，其中通过施加1-27吨的合模力进行步骤ii)。
10.权利要求7的方法，其中可固化的液体包括硅氧烷组合物。
11.权利要求7的方法，其中在80-180℃的温度下进行步骤iii)。
12.权利要求7的方法，其中在注入速度足以在模具空腔内提供0.6-2.0MPa的力的压力下进行步骤iv)。
13.权利要求10的方法，其中硅氧烷组合物的粘度为80-3000泊。
14.权利要求10的方法，其中硅氧烷组合物的固化产物的模量为100-1000兆帕。
15.一种方法，它包括：
a)施加小片连接粘合剂组合物到基底上，
b)将半导体小片连接到小片连接粘合剂组合物上，
c)固化该小片连接粘合剂组合物，形成小片连接粘合剂，
任选地d)将半导体小片引线接合到基底上，和
e)在如步骤c)或步骤d)的产物一样形成的半导体器件上注塑可固化液体，其中注塑通过包括下述的方法进行：
i)在敞模内放置半导体器件，
ii)封闭模具，形成模具空腔，
iii)加热该模具空腔，
iv)注塑可固化的液体到模具空腔内，以重叠注塑半导体器件，
v)打开模具并取出步骤iv)中的产物，和
任选地vi)后固化步骤v)的产物。
16.一种方法，它包括：
a)将半导体小片连接到基底上，形成半导体器件，和
b)通过包括下述的方法在半导体器件上注塑可固化液体：
i)在敞模内放置半导体器件，
ii)封闭模具，形成模具空腔，
iii)加热该模具空腔，
iv)注塑可固化的液体到模具空腔内，以重叠注塑半导体器件，
v)打开模具并取出步骤iv)中的产物，和
任选地vi)后固化步骤v)的产物。
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