WO2002043136A1 - Procede de revetements de pieces electroniques - Google Patents

Procede de revetements de pieces electroniques Download PDF

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Publication number
WO2002043136A1
WO2002043136A1 PCT/JP2001/009870 JP0109870W WO0243136A1 WO 2002043136 A1 WO2002043136 A1 WO 2002043136A1 JP 0109870 W JP0109870 W JP 0109870W WO 0243136 A1 WO0243136 A1 WO 0243136A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
silicone rubber
electrode
electronic component
coating
Prior art date
Application number
PCT/JP2001/009870
Other languages
English (en)
Japanese (ja)
Inventor
Kimio Yamakawa
Junji Nakanishi
Minoru Isshiki
Tomoko Kato
Katsutoshi Mine
Original Assignee
Dow Corning Toray Silicone Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Silicone Co., Ltd. filed Critical Dow Corning Toray Silicone Co., Ltd.
Priority to AU2002214277A priority Critical patent/AU2002214277A1/en
Publication of WO2002043136A1 publication Critical patent/WO2002043136A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body

Definitions

  • the present invention relates to a method for coating an electronic component, and more specifically, to cover only a main part of an electronic component having an electrode protruding upward except the electrode with silicone rubber, thereby reducing contamination of the electrode by silicone rubber.
  • the present invention relates to a method for coating an electronic component with silicone rubber, which can reduce subsequent soldering defects.
  • the hydrosilylation reaction-curable silicone rubber composition is uniformly cured by heating, the composition covering the main part of the electronic component without curing the composition on the electrode surface protruding upwards. It was difficult to cure only the object.
  • the present inventors have found that (A) an organopolysiloxane having at least two silicon-bonded alkenyl groups in the molecule, (B) a organopolysiloxane having at least two silicon-bonded hydrogen atoms in the molecule,
  • the hydrosilylation reaction-curable silicone rubber composition comprising an organopolysiloxane having a silicon atom-bonded hydrogen atom content of not less than 9% by weight and (C) a platinum-based catalyst is formed into a thin film.
  • the inventors recognized that there was a phenomenon that the heating speed was significantly lower than that in the case of a thick film depending on the heating conditions, and found that the use of this phenomenon could solve the above-mentioned problem, and reached the present invention. . Disclosure of the invention
  • an object of the present invention is to cover only the main part other than the electrodes of an electronic component having electrodes protruding upward with silicone rubber, to reduce contamination of the electrodes by silicone rubber, and to prevent subsequent soldering failure.
  • An object of the present invention is to provide a method of coating an electronic component with a silicone rubber which can be reduced.
  • the present invention relates to a main part other than the electrode of an electronic component having an electrode protruding upward,
  • A) an organopolysiloxane having at least two silicon-bonded alkenyl groups in the molecule
  • B having at least two silicon-bonded hydrogen atoms in the molecule, and the silicon-bonded hydrogen atom Is coated with at least 0.9% by weight of an organopolysiloxane
  • C a hydrosilylation-curable silicone rubber composition comprising a platinum-based catalyst.
  • the present invention relates to a method for coating an electronic component with silicone rubber, which comprises heating the composition so as not to cure the composition, curing only the composition covering the main part, and then washing the composition with a solvent.
  • FIG. 1 is a cross-sectional view of a monolithic IC which is an example of an electronic component according to the present invention.
  • FIG. 2 is a cross-sectional view of a test board substrate on which a monolithic IC as an example of an electronic component according to the present invention is mounted.
  • 1 is a semiconductor chip
  • 2 is a bonding pad
  • 3 is a bump
  • 4 is a passivation film
  • 5 is silicone rubber
  • 6 is a test board substrate
  • 7 is a test board circuit wiring
  • 8 is a test board external lead.
  • the electronic components used in this method include: semiconductor chips such as monolithic ICs, hybrid ICs, LSIs, and VLSIs; main parts such as circuit boards for semiconductor chips; and wires, beam leads, bumps, and the like as electrical extraction parts. It has an electrode protruding above.
  • An example of such an electronic component is shown in FIG.
  • the electronic component shown in FIG. 1 is a monolithic IC, and a gold bump 3 for electrical connection with an external circuit board is formed on a bonding pad 2 on a surface of a semiconductor chip 1. Further, on the surface of the semiconductor chip 1, in addition to the bonding pads 2, a partion film 4 made of a polyimide resin may be formed. The main part around the semiconductor chip 1 is covered with the silicone rubber 5.
  • the silicone rubber is in the form of a gel having a relatively low hardness to a rubber having a high hardness.
  • A an organopolysiloxane having at least two silicon atom-bonded alkenyl groups in a molecule, as a hydrosilylation reaction-type silicone rubber composition for forming the silicone rubber 5;
  • B an organopolysiloxane having at least two silicon-bonded hydrogen atoms in the molecule, wherein the content of the silicon-bonded hydrogen atoms is at least 0.9% by weight; and
  • platinum It is characterized by using at least a composition from a system catalyst.
  • the organopolysiloxane of component (A) is characterized by having at least two silicon-bonded alkenyl groups in one molecule.
  • the alkenyl group include a vinyl group, an aryl group, a butenyl group, and a pentenyl group, and a vinyl group is preferable.
  • the organic group having a silicon atom bond other than the alkenyl group in the component (A) includes an alkyl group such as a methyl group, an ethyl group and a propyl group; an aryl group such as a phenyl group and a tolyl group; a benzyl group and a phenethyl group. And aralkyl groups such as 3,3,3-trifluoropropyl group.
  • the molecular structure of the component (A) include linear, partially branched linear, branched, and resinous structures.
  • the organopolysiloxane of component (B) has at least two silicon-bonded hydrogen atoms in one molecule.
  • an alkyl group such as a methyl group, an ethyl group and a propyl group; an aryl group such as a phenyl group and a tolyl group; Group; a benzyl group, Ararukiru groups such as phenethyl; 3 5 3, a halogenated alkyl group such as 3-Torifuruoropuro pill groups.
  • Examples of the molecular structure of the component (B) include a straight-chain structure, a partially branched straight-chain structure, a branched-chain structure, and a resin-like structure, and are preferably a straight-chain structure.
  • the content of silicon-bonded hydrogen atoms in the component (B) should be at least 0.9% by weight, preferably at least 1.0% by weight, particularly preferably at least 1.2% by weight. You. This is because, when the content of silicon-bonded hydrogen atoms increases as in the above range, when the obtained silicone rubber composition is formed into a thin film, the phenomenon that the curing rate becomes slow becomes remarkable. is there.
  • organopolysiloxane of the component (B) examples include a methylhydrogenene polysiloxane having a trimethylsiloxy group at both ends of a molecular chain and a dimethylsiloxane / methylhydrogensiloxane copolymer having a trimethylsiloxy group at both ends of a molecular chain. Is exemplified.
  • the content of the component (B) is not particularly limited as long as the composition cures.
  • the amount of the silicon-bonded hydrogen atom in the component (B) is preferably 1 mole of the alkenyl group in the component (A). The amount is preferably 0.1 to 10 mol.
  • the platinum catalyst of the component (C) is a catalyst for accelerating the hydrosilylation reaction between the alkenyl group in the component (A) and the silicon-bonded hydrogen atom in the component (B), and includes chloroplatinic acid and platinum chloride. Examples thereof include an alcoholic solution of an acid, a platinum olefin complex, a platinum alkenylsiloxane complex, and a platinum carbonyl complex.
  • the content of the component (C) is not particularly limited as long as it is an amount that cures the composition. However, the amount of the platinum metal in the component (C) is 1 to 50 ppm by weight based on the composition. It is preferred that
  • the composition contains, as other optional components, aromatic solvents such as toluene and xylene; solvents such as hexane, heptane, and octane; and dry solvents, wet silica, quartz, and oxidized water.
  • aromatic solvents such as toluene and xylene
  • solvents such as hexane, heptane, and octane
  • dry solvents wet silica, quartz, and oxidized water.
  • Fillers such as titanium; coloring agents such as carbon black and iron oxide; thermally conductive fillers such as alumina and boron nitride; conductive fillers such as silver and copper; 3-methyl-1-butyn-1-ol; Reaction inhibitors such as 3-phenyl-1-butyn-1-ol; adhesion-imparting agents such as 3-methacryloxypropyltrimethoxysilane and 3-glycidoxypropyltrimethoxysilane; and other flame retardants May be contained.
  • the viscosity of the composition is high, it is preferable to dilute the composition with a solvent.
  • a main part other than the electrode of an electronic component having an electrode protruding upward is coated with the composition.
  • the method of coating the main part with the composition is not limited, and examples thereof include a potting method, a casting method, a dipping method, a dispensing method, an injection method, a spraying method, and a spin coating method. Is preferred.
  • heating is performed so that the thin film-shaped composition on the electrode surface is not cured, so that only the composition covering the main part is cured.
  • the heating temperature is not limited, but if the composition is cured at a relatively low temperature, the curing rate of the composition in the form of a thin film on the electrode surface is significantly slower than that of the composition covering the main part of the electronic component. , Preferably in the range of 40 to 140 ° C, and particularly preferably in the range of 60 to 140 ° C.
  • the composition on the electrode surface is then removed by solvent washing.
  • the solvent is not limited.
  • aromatic solvents such as toluene and xylene; aliphatic solvents such as hexane, heptane and octane; alicyclic solvents such as cyclohexane; petroleum solvents such as isoparaffin Low molecular siloxanes such as cyclic siloxane oligomers and linear siloxane oligomers; and halogen-based solvents and sulfone-based solvents.
  • the method of solvent-cleaning the composition on the electrode surface is not limited, and examples thereof include shower cleaning with a solvent, spray cleaning with a solvent, and immersion cleaning in a solvent.
  • the solvent may be heated in order to increase the cleaning efficiency, and when immersing in the solvent for cleaning, ultrasonic vibration or mechanical vibration may be applied. Thereafter, by removing the solvent by heating as necessary, an electronic component in which only the main part of the electronic component is covered with silicone rubber can be obtained.
  • the viscosities in the examples are values at 25 ° C., and the electrode contamination rate and the defective rate of soldering of electronic components were determined as follows.
  • Electrode contamination rate Microscopic photographs were used to determine whether the electrode surface was covered with silicone rubber, and the contamination rate of the electrode with silicone rubber was determined.
  • the gold bump 3 of the monolithic IC shown in FIG. 1 was surface-mounted on the test board circuit wiring 7 on the surface of the test board substrate 6 and soldered. After performing 100 cycles of thermal cycle test of 20 test board boards 6 on which electronic components are mounted in this way, one cycle of 30 minutes at 65 ° C and 30 minutes at + 150 ° C, test An electrical continuity test was performed between the board external leads 8, and the percentage of soldering failures was determined from the percentage of test board substrates with poor conduction.
  • a silicone rubber composition having a viscosity of 20 mPa-s prepared by dissolving a lylation-curable silicone rubber composition in hexane at a weight ratio of 2: 1, was dispensed to a height of half of a gold bump 3 using a dispenser. After application, it was heated at 110 ° C for 10 minutes. When this electronic component was observed, it was confirmed that the surface of the gold bump 3 was covered with the silicone rubber composition in the form of a thin film. Thereafter, the electronic component was shower-washed with toluene for 1 minute to remove the silicone rubber composition on the surface of the gold bump 3, and further heated at 150 ° C for 1 hour. Table 1 shows the electrode contamination rate and soldering failure rate for this electronic component.
  • Example 1 In Example 1, the silicone rubber composition was applied by a dispenser to half the height of the gold bump 3 and then heated at 150 ° C. for 1 hour. Observation of this electronic component confirmed that the surface of the gold bump 3 was covered with a thin film of silicone rubber. Thereafter, the electronic components were shower-washed with toluene for 1 minute, and further heated at 150 ° C. for 1 hour. Table 1 shows the electrode contamination rate and soldering failure rate for this electronic component.
  • the amount of silicon-bonded hydrogen atoms in this component is 1.5 moles per mole of the total vinyl groups in the dimethylpolysiloxane and organopolysiloxane resin), and 1,3-divinyltetramethyldimethyl Siloxane complex (amount of platinum metal by weight of 1 Oppm for this composition) and 3-phenyl-11-but
  • the method for coating an electronic component of the present invention only the main part other than the electrode of an electronic component having an electrode protruding upward is coated with silicone rubber, the contamination of the electrode by silicone rubber is reduced, and the subsequent soldering is performed. There is a feature that it is possible to reduce defective mounting. By adopting the method of the present invention, it is possible to reduce the defective rate in the soldering step of the electronic component, and to contribute to the rationalization efficiency of the electronic component industry.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

L'invention concerne un procédé de revêtement d'une pièce électronique comprenant une électrode saillant vers le haut, ce procédé consistant à revêtir la portion principale de la pièce électronique, à l'exception de l'électrode, à l'aide d'une composition à base de caoutchouc et de silicone, du type durcissant par hydrosilylation, cette composition comprenant (A) un organopolysiloxane possédant au moins deux groupes alcényle liés à un atome de silicium dans une molécule, (B) un organopolysiloxane possédant au moins deux atomes d'hydrogène liés à un atome de silicium dans une molécule, le pourcentage pondéral d'atome d'hydrogène lié à l'atome de silicium étant de l'ordre de 0,9 % ou davantage, et (C) un catalyseur à base de platine, puis à chauffer la pièce électronique dans des conditions qui ne provoquent pas le durcissement de la composition, sous la forme d'une couche mince, mais le durcissement seulement de la composition recouvrant la portion principale de la pièce, et enfin à laver la pièce à l'aide d'un solvant. IL est possible d'utiliser ce procédé de revêtement pour empêcher la salissure de l'électrode par une résine liquide durcissante et donc éviter un défaut de soudure dans l'étape ultérieure de soudage.
PCT/JP2001/009870 2000-11-27 2001-11-12 Procede de revetements de pieces electroniques WO2002043136A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002214277A AU2002214277A1 (en) 2000-11-27 2001-11-12 Method for coating electronic parts

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000359160A JP2002164480A (ja) 2000-11-27 2000-11-27 電子部品の被覆方法
JP2000-359160 2000-11-27

Publications (1)

Publication Number Publication Date
WO2002043136A1 true WO2002043136A1 (fr) 2002-05-30

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PCT/JP2001/009870 WO2002043136A1 (fr) 2000-11-27 2001-11-12 Procede de revetements de pieces electroniques

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JP (1) JP2002164480A (fr)
AU (1) AU2002214277A1 (fr)
TW (1) TW521357B (fr)
WO (1) WO2002043136A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103242801A (zh) * 2013-05-14 2013-08-14 汕头市骏码凯撒有限公司 一种单组分高折射率led封装胶及其制备方法
US20220028809A1 (en) * 2020-07-24 2022-01-27 Innolux Corporation Electronic substrate and electronic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0757080A2 (fr) * 1995-08-04 1997-02-05 Dow Corning Toray Silicone Company Ltd. Compositions durcissables d'organosiloxane et dispositifs semi-conducteur
JPH1112546A (ja) * 1997-04-30 1999-01-19 Toray Dow Corning Silicone Co Ltd シリコーン系接着性シート、その製造方法、および半導体装置
JP2000080335A (ja) * 1998-09-04 2000-03-21 Dow Corning Toray Silicone Co Ltd シリコーン系接着性シート、その製造方法、および半導体装置
JP2000119627A (ja) * 1998-10-12 2000-04-25 Dow Corning Toray Silicone Co Ltd 接着性硬化シリコーンシートの保存方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0757080A2 (fr) * 1995-08-04 1997-02-05 Dow Corning Toray Silicone Company Ltd. Compositions durcissables d'organosiloxane et dispositifs semi-conducteur
JPH1112546A (ja) * 1997-04-30 1999-01-19 Toray Dow Corning Silicone Co Ltd シリコーン系接着性シート、その製造方法、および半導体装置
JP2000080335A (ja) * 1998-09-04 2000-03-21 Dow Corning Toray Silicone Co Ltd シリコーン系接着性シート、その製造方法、および半導体装置
JP2000119627A (ja) * 1998-10-12 2000-04-25 Dow Corning Toray Silicone Co Ltd 接着性硬化シリコーンシートの保存方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103242801A (zh) * 2013-05-14 2013-08-14 汕头市骏码凯撒有限公司 一种单组分高折射率led封装胶及其制备方法
CN103242801B (zh) * 2013-05-14 2015-03-11 汕头市骏码凯撒有限公司 一种单组分高折射率led封装胶及其制备方法
US20220028809A1 (en) * 2020-07-24 2022-01-27 Innolux Corporation Electronic substrate and electronic device
US11830833B2 (en) * 2020-07-24 2023-11-28 Innolux Corporation Electronic substrate and electronic device

Also Published As

Publication number Publication date
JP2002164480A (ja) 2002-06-07
TW521357B (en) 2003-02-21
AU2002214277A1 (en) 2002-06-03

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