JP2011187925A5 - - Google Patents
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- JP2011187925A5 JP2011187925A5 JP2010261517A JP2010261517A JP2011187925A5 JP 2011187925 A5 JP2011187925 A5 JP 2011187925A5 JP 2010261517 A JP2010261517 A JP 2010261517A JP 2010261517 A JP2010261517 A JP 2010261517A JP 2011187925 A5 JP2011187925 A5 JP 2011187925A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- transition metal
- aluminum
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000002500 ions Chemical class 0.000 claims description 45
- 150000003624 transition metals Chemical class 0.000 claims description 20
- 229910052723 transition metal Inorganic materials 0.000 claims description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 16
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims 14
- 239000010936 titanium Substances 0.000 claims 14
- 229910052782 aluminium Inorganic materials 0.000 claims 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 12
- 239000010955 niobium Substances 0.000 claims 10
- 239000010949 copper Substances 0.000 claims 8
- 239000011572 manganese Substances 0.000 claims 8
- 239000011669 selenium Substances 0.000 claims 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 7
- 229910052798 chalcogen Inorganic materials 0.000 claims 7
- 150000001787 chalcogens Chemical class 0.000 claims 7
- 229910052804 chromium Inorganic materials 0.000 claims 7
- 229910052735 hafnium Inorganic materials 0.000 claims 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 7
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims 7
- 229910052719 titanium Inorganic materials 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 229910052750 molybdenum Inorganic materials 0.000 claims 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 5
- 239000011733 molybdenum Substances 0.000 claims 5
- 229910052758 niobium Inorganic materials 0.000 claims 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 5
- 229910052715 tantalum Inorganic materials 0.000 claims 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 5
- 229910052721 tungsten Inorganic materials 0.000 claims 5
- 239000010937 tungsten Substances 0.000 claims 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 229910052748 manganese Inorganic materials 0.000 claims 4
- 229910052711 selenium Inorganic materials 0.000 claims 4
- 229910052717 sulfur Inorganic materials 0.000 claims 4
- 239000011593 sulfur Substances 0.000 claims 4
- 239000007769 metal material Substances 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 1
- 230000005012 migration Effects 0.000 claims 1
- 238000013508 migration Methods 0.000 claims 1
- 230000033116 oxidation-reduction process Effects 0.000 claims 1
- 238000006722 reduction reaction Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 31
- 239000002356 single layer Substances 0.000 description 9
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010261517A JP5732827B2 (ja) | 2010-02-09 | 2010-11-24 | 記憶素子および記憶装置、並びに記憶装置の動作方法 |
| TW099146694A TWI443821B (zh) | 2010-02-09 | 2010-12-29 | A memory element and a memory device, and a method of operating the memory device |
| KR1020110005337A KR101785727B1 (ko) | 2010-02-09 | 2011-01-19 | 기억 소자 및 기억 장치, 및 기억 장치의 동작 방법 |
| CN201110035461.9A CN102194512B (zh) | 2010-02-09 | 2011-02-01 | 存储元件、存储装置以及存储装置操作方法 |
| US13/018,744 US8427860B2 (en) | 2010-02-09 | 2011-02-01 | Memory component, memory device, and method of operating memory device |
| US13/846,193 US8730709B2 (en) | 2010-02-09 | 2013-03-18 | Memory component, memory device, and method of operating memory device |
| US14/201,376 US9240549B2 (en) | 2010-02-09 | 2014-03-07 | Memory component, memory device, and method of operating memory device |
| US14/950,512 US9543514B2 (en) | 2010-02-09 | 2015-11-24 | Memory component, memory device, and method of operating memory device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010026573 | 2010-02-09 | ||
| JP2010026573 | 2010-02-09 | ||
| JP2010261517A JP5732827B2 (ja) | 2010-02-09 | 2010-11-24 | 記憶素子および記憶装置、並びに記憶装置の動作方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011187925A JP2011187925A (ja) | 2011-09-22 |
| JP2011187925A5 true JP2011187925A5 (enExample) | 2014-01-09 |
| JP5732827B2 JP5732827B2 (ja) | 2015-06-10 |
Family
ID=44353600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010261517A Expired - Fee Related JP5732827B2 (ja) | 2010-02-09 | 2010-11-24 | 記憶素子および記憶装置、並びに記憶装置の動作方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US8427860B2 (enExample) |
| JP (1) | JP5732827B2 (enExample) |
| KR (1) | KR101785727B1 (enExample) |
| CN (1) | CN102194512B (enExample) |
| TW (1) | TWI443821B (enExample) |
Families Citing this family (87)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9012307B2 (en) | 2010-07-13 | 2015-04-21 | Crossbar, Inc. | Two terminal resistive switching device structure and method of fabricating |
| US8946046B1 (en) | 2012-05-02 | 2015-02-03 | Crossbar, Inc. | Guided path for forming a conductive filament in RRAM |
| US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
| US9570678B1 (en) | 2010-06-08 | 2017-02-14 | Crossbar, Inc. | Resistive RAM with preferental filament formation region and methods |
| KR101883236B1 (ko) | 2010-06-11 | 2018-08-01 | 크로스바, 인크. | 메모리 디바이스를 위한 필러 구조 및 방법 |
| US8374018B2 (en) | 2010-07-09 | 2013-02-12 | Crossbar, Inc. | Resistive memory using SiGe material |
| US8947908B2 (en) | 2010-11-04 | 2015-02-03 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
| US8168506B2 (en) | 2010-07-13 | 2012-05-01 | Crossbar, Inc. | On/off ratio for non-volatile memory device and method |
| US8569172B1 (en) | 2012-08-14 | 2013-10-29 | Crossbar, Inc. | Noble metal/non-noble metal electrode for RRAM applications |
| US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
| US8889521B1 (en) | 2012-09-14 | 2014-11-18 | Crossbar, Inc. | Method for silver deposition for a non-volatile memory device |
| US9401475B1 (en) | 2010-08-23 | 2016-07-26 | Crossbar, Inc. | Method for silver deposition for a non-volatile memory device |
| US8492195B2 (en) | 2010-08-23 | 2013-07-23 | Crossbar, Inc. | Method for forming stackable non-volatile resistive switching memory devices |
| US8558212B2 (en) | 2010-09-29 | 2013-10-15 | Crossbar, Inc. | Conductive path in switching material in a resistive random access memory device and control |
| US8502185B2 (en) | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
| USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
| US8930174B2 (en) | 2010-12-28 | 2015-01-06 | Crossbar, Inc. | Modeling technique for resistive random access memory (RRAM) cells |
| US8791010B1 (en) | 2010-12-31 | 2014-07-29 | Crossbar, Inc. | Silver interconnects for stacked non-volatile memory device and method |
| US9153623B1 (en) | 2010-12-31 | 2015-10-06 | Crossbar, Inc. | Thin film transistor steering element for a non-volatile memory device |
| US8815696B1 (en) | 2010-12-31 | 2014-08-26 | Crossbar, Inc. | Disturb-resistant non-volatile memory device using via-fill and etchback technique |
| JP2012199336A (ja) * | 2011-03-18 | 2012-10-18 | Sony Corp | 記憶素子および記憶装置 |
| US8546781B2 (en) * | 2011-05-31 | 2013-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Nitrogen doped aluminum oxide resistive random access memory |
| US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
| US8618525B2 (en) * | 2011-06-09 | 2013-12-31 | Intermolecular, Inc. | Work function tailoring for nonvolatile memory applications |
| US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
| JP2013016530A (ja) * | 2011-06-30 | 2013-01-24 | Sony Corp | 記憶素子およびその製造方法ならびに記憶装置 |
| US8946669B1 (en) | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
| US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
| US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
| JP5708930B2 (ja) * | 2011-06-30 | 2015-04-30 | ソニー株式会社 | 記憶素子およびその製造方法ならびに記憶装置 |
| US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
| CN103828047A (zh) | 2011-07-22 | 2014-05-28 | 科洛斯巴股份有限公司 | 用于非易失性存储器装置的p+硅锗材料的种子层及方法 |
| US9729155B2 (en) | 2011-07-29 | 2017-08-08 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
| US8866121B2 (en) | 2011-07-29 | 2014-10-21 | Sandisk 3D Llc | Current-limiting layer and a current-reducing layer in a memory device |
| US8674724B2 (en) | 2011-07-29 | 2014-03-18 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
| US10056907B1 (en) | 2011-07-29 | 2018-08-21 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
| US8659001B2 (en) | 2011-09-01 | 2014-02-25 | Sandisk 3D Llc | Defect gradient to boost nonvolatile memory performance |
| US8637413B2 (en) | 2011-12-02 | 2014-01-28 | Sandisk 3D Llc | Nonvolatile resistive memory element with a passivated switching layer |
| JP5480233B2 (ja) | 2011-12-20 | 2014-04-23 | 株式会社東芝 | 不揮発性記憶装置、及びその製造方法 |
| US8698119B2 (en) | 2012-01-19 | 2014-04-15 | Sandisk 3D Llc | Nonvolatile memory device using a tunnel oxide as a current limiter element |
| US9059390B2 (en) * | 2012-02-06 | 2015-06-16 | Imec | Self-isolated conductive bridge memory device |
| US8686386B2 (en) | 2012-02-17 | 2014-04-01 | Sandisk 3D Llc | Nonvolatile memory device using a varistor as a current limiter element |
| JP5346144B1 (ja) * | 2012-02-20 | 2013-11-20 | パナソニック株式会社 | 不揮発性記憶装置およびその製造方法 |
| JP2013187336A (ja) | 2012-03-07 | 2013-09-19 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2013201271A (ja) | 2012-03-23 | 2013-10-03 | Toshiba Corp | 不揮発性半導体記憶装置 |
| US9099633B2 (en) | 2012-03-26 | 2015-08-04 | Adesto Technologies Corporation | Solid electrolyte memory elements with electrode interface for improved performance |
| US9087576B1 (en) | 2012-03-29 | 2015-07-21 | Crossbar, Inc. | Low temperature fabrication method for a three-dimensional memory device and structure |
| JP6050015B2 (ja) * | 2012-03-30 | 2016-12-21 | ソニーセミコンダクタソリューションズ株式会社 | 記憶素子および記憶装置 |
| US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
| US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
| US8796658B1 (en) | 2012-05-07 | 2014-08-05 | Crossbar, Inc. | Filamentary based non-volatile resistive memory device and method |
| JP6162931B2 (ja) * | 2012-06-19 | 2017-07-12 | ソニーセミコンダクタソリューションズ株式会社 | 記憶素子および記憶装置 |
| JP5783961B2 (ja) * | 2012-07-09 | 2015-09-24 | 株式会社東芝 | 不揮発性記憶装置 |
| US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
| US10096653B2 (en) | 2012-08-14 | 2018-10-09 | Crossbar, Inc. | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes |
| JP2014038675A (ja) * | 2012-08-15 | 2014-02-27 | Sony Corp | 記憶装置および駆動方法 |
| US8946673B1 (en) | 2012-08-24 | 2015-02-03 | Crossbar, Inc. | Resistive switching device structure with improved data retention for non-volatile memory device and method |
| US9312483B2 (en) | 2012-09-24 | 2016-04-12 | Crossbar, Inc. | Electrode structure for a non-volatile memory device and method |
| US9576616B2 (en) | 2012-10-10 | 2017-02-21 | Crossbar, Inc. | Non-volatile memory with overwrite capability and low write amplification |
| US11068620B2 (en) | 2012-11-09 | 2021-07-20 | Crossbar, Inc. | Secure circuit integrated with memory layer |
| US8982647B2 (en) | 2012-11-14 | 2015-03-17 | Crossbar, Inc. | Resistive random access memory equalization and sensing |
| US9412790B1 (en) | 2012-12-04 | 2016-08-09 | Crossbar, Inc. | Scalable RRAM device architecture for a non-volatile memory device and method |
| KR102166506B1 (ko) * | 2012-12-26 | 2020-10-15 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 기억 장치 및 그 제조 방법 |
| US9406379B2 (en) | 2013-01-03 | 2016-08-02 | Crossbar, Inc. | Resistive random access memory with non-linear current-voltage relationship |
| US8921821B2 (en) * | 2013-01-10 | 2014-12-30 | Micron Technology, Inc. | Memory cells |
| US9324942B1 (en) | 2013-01-31 | 2016-04-26 | Crossbar, Inc. | Resistive memory cell with solid state diode |
| US9112145B1 (en) | 2013-01-31 | 2015-08-18 | Crossbar, Inc. | Rectified switching of two-terminal memory via real time filament formation |
| US9252359B2 (en) | 2013-03-03 | 2016-02-02 | Adesto Technologies Corporation | Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof |
| WO2014137943A2 (en) * | 2013-03-03 | 2014-09-12 | Adesto Technologies Corporation | Programmable impedance memory elements and corresponding methods |
| US9412945B1 (en) | 2013-03-14 | 2016-08-09 | Adesto Technologies Corporation | Storage elements, structures and methods having edgeless features for programmable layer(s) |
| WO2014146003A1 (en) | 2013-03-15 | 2014-09-18 | Adesto Technologies Corporation | Nonvolatile memory with semimetal or semiconductors electrodes |
| CN103268917A (zh) * | 2013-05-28 | 2013-08-28 | 清华大学 | 应用于阻变存储器的Al-W-O堆叠结构 |
| US9105572B2 (en) * | 2013-09-09 | 2015-08-11 | Hiroyuki Kanaya | Magnetic memory and manufacturing method thereof |
| US9461242B2 (en) | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
| US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
| US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
| US10454024B2 (en) | 2014-02-28 | 2019-10-22 | Micron Technology, Inc. | Memory cells, methods of fabrication, and memory devices |
| US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
| US9548450B2 (en) | 2014-09-23 | 2017-01-17 | Micron Technology, Inc. | Devices containing metal chalcogenides |
| TWI696997B (zh) | 2014-10-07 | 2020-06-21 | 美商愛德斯托科技公司 | 具有導電性帽層的記憶體元件及其方法 |
| US9349945B2 (en) | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
| US9768377B2 (en) * | 2014-12-02 | 2017-09-19 | Micron Technology, Inc. | Magnetic cell structures, and methods of fabrication |
| US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
| US9431606B1 (en) * | 2015-08-12 | 2016-08-30 | Micron Technology, Inc. | Memory cells |
| US11393515B2 (en) * | 2018-06-14 | 2022-07-19 | Intel Corporation | Transition metal dichalcogenide based spin orbit torque memory device |
| KR102081020B1 (ko) * | 2019-04-05 | 2020-02-24 | 연세대학교 산학협력단 | 선택 소자 및 이의 제조 방법 |
| WO2022055197A1 (ko) * | 2020-09-09 | 2022-03-17 | 한양대학교 산학협력단 | 칼코겐 원소가 도핑된 선택 소자 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000048196A (ja) | 1998-07-27 | 2000-02-18 | Miyachi Technos Corp | 溶接状況状態記録方法および溶接状況状態記録装置 |
| CA2362283A1 (en) | 1999-02-11 | 2000-08-17 | Arizona Board Of Regents | Programmable microelectronic devices and methods of forming and programming same |
| US6867996B2 (en) * | 2002-08-29 | 2005-03-15 | Micron Technology, Inc. | Single-polarity programmable resistance-variable memory element |
| JP4792714B2 (ja) | 2003-11-28 | 2011-10-12 | ソニー株式会社 | 記憶素子及び記憶装置 |
| KR100623177B1 (ko) * | 2005-01-25 | 2006-09-13 | 삼성전자주식회사 | 높은 유전율을 갖는 유전체 구조물, 이의 제조 방법, 이를포함하는 불휘발성 반도체 메모리 장치 및 그 제조 방법 |
| US7608848B2 (en) * | 2006-05-09 | 2009-10-27 | Macronix International Co., Ltd. | Bridge resistance random access memory device with a singular contact structure |
| US20080016684A1 (en) * | 2006-07-06 | 2008-01-24 | General Electric Company | Corrosion resistant wafer processing apparatus and method for making thereof |
| US7388771B2 (en) * | 2006-10-24 | 2008-06-17 | Macronix International Co., Ltd. | Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states |
| KR20080064353A (ko) * | 2007-01-04 | 2008-07-09 | 삼성전자주식회사 | 저항 메모리 소자 및 그 제조 방법 |
| US7663135B2 (en) * | 2007-01-31 | 2010-02-16 | Macronix International Co., Ltd. | Memory cell having a side electrode contact |
| JP2009043873A (ja) * | 2007-08-08 | 2009-02-26 | Sony Corp | 記憶素子および記憶装置 |
| JP2009043905A (ja) * | 2007-08-08 | 2009-02-26 | Hitachi Ltd | 半導体装置 |
| JP5557419B2 (ja) * | 2007-10-17 | 2014-07-23 | スパンション エルエルシー | 半導体装置 |
| JP2009135370A (ja) * | 2007-12-03 | 2009-06-18 | Panasonic Corp | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 |
| JP4466738B2 (ja) * | 2008-01-09 | 2010-05-26 | ソニー株式会社 | 記憶素子および記憶装置 |
| US20090283739A1 (en) * | 2008-05-19 | 2009-11-19 | Masahiro Kiyotoshi | Nonvolatile storage device and method for manufacturing same |
| US8094485B2 (en) * | 2008-05-22 | 2012-01-10 | Panasonic Corporation | Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect |
| JP5191803B2 (ja) * | 2008-05-29 | 2013-05-08 | 株式会社東芝 | 不揮発性記憶装置の製造方法 |
| US8279650B2 (en) * | 2009-04-20 | 2012-10-02 | Sandisk 3D Llc | Memory system with data line switching scheme |
-
2010
- 2010-11-24 JP JP2010261517A patent/JP5732827B2/ja not_active Expired - Fee Related
- 2010-12-29 TW TW099146694A patent/TWI443821B/zh not_active IP Right Cessation
-
2011
- 2011-01-19 KR KR1020110005337A patent/KR101785727B1/ko not_active Expired - Fee Related
- 2011-02-01 US US13/018,744 patent/US8427860B2/en not_active Expired - Fee Related
- 2011-02-01 CN CN201110035461.9A patent/CN102194512B/zh not_active Expired - Fee Related
-
2013
- 2013-03-18 US US13/846,193 patent/US8730709B2/en active Active
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2014
- 2014-03-07 US US14/201,376 patent/US9240549B2/en active Active
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2015
- 2015-11-24 US US14/950,512 patent/US9543514B2/en not_active Expired - Fee Related
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