JP5732827B2 - 記憶素子および記憶装置、並びに記憶装置の動作方法 - Google Patents

記憶素子および記憶装置、並びに記憶装置の動作方法 Download PDF

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JP5732827B2
JP5732827B2 JP2010261517A JP2010261517A JP5732827B2 JP 5732827 B2 JP5732827 B2 JP 5732827B2 JP 2010261517 A JP2010261517 A JP 2010261517A JP 2010261517 A JP2010261517 A JP 2010261517A JP 5732827 B2 JP5732827 B2 JP 5732827B2
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layer
electrode
resistance
transition metal
ion source
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Japanese (ja)
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JP2011187925A (ja
JP2011187925A5 (enExample
Inventor
大場　和博
和博 大場
水口　徹也
徹也 水口
周一郎 保田
周一郎 保田
荒谷　勝久
勝久 荒谷
雅之 紫牟田
雅之 紫牟田
河内山　彰
彰 河内山
小笠原　繭美
繭美 小笠原
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Sony Corp
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Sony Corp
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Priority to JP2010261517A priority Critical patent/JP5732827B2/ja
Priority to TW099146694A priority patent/TWI443821B/zh
Priority to KR1020110005337A priority patent/KR101785727B1/ko
Priority to US13/018,744 priority patent/US8427860B2/en
Priority to CN201110035461.9A priority patent/CN102194512B/zh
Publication of JP2011187925A publication Critical patent/JP2011187925A/ja
Priority to US13/846,193 priority patent/US8730709B2/en
Publication of JP2011187925A5 publication Critical patent/JP2011187925A5/ja
Priority to US14/201,376 priority patent/US9240549B2/en
Application granted granted Critical
Publication of JP5732827B2 publication Critical patent/JP5732827B2/ja
Priority to US14/950,512 priority patent/US9543514B2/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP2010261517A 2010-02-09 2010-11-24 記憶素子および記憶装置、並びに記憶装置の動作方法 Expired - Fee Related JP5732827B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2010261517A JP5732827B2 (ja) 2010-02-09 2010-11-24 記憶素子および記憶装置、並びに記憶装置の動作方法
TW099146694A TWI443821B (zh) 2010-02-09 2010-12-29 A memory element and a memory device, and a method of operating the memory device
KR1020110005337A KR101785727B1 (ko) 2010-02-09 2011-01-19 기억 소자 및 기억 장치, 및 기억 장치의 동작 방법
CN201110035461.9A CN102194512B (zh) 2010-02-09 2011-02-01 存储元件、存储装置以及存储装置操作方法
US13/018,744 US8427860B2 (en) 2010-02-09 2011-02-01 Memory component, memory device, and method of operating memory device
US13/846,193 US8730709B2 (en) 2010-02-09 2013-03-18 Memory component, memory device, and method of operating memory device
US14/201,376 US9240549B2 (en) 2010-02-09 2014-03-07 Memory component, memory device, and method of operating memory device
US14/950,512 US9543514B2 (en) 2010-02-09 2015-11-24 Memory component, memory device, and method of operating memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010026573 2010-02-09
JP2010026573 2010-02-09
JP2010261517A JP5732827B2 (ja) 2010-02-09 2010-11-24 記憶素子および記憶装置、並びに記憶装置の動作方法

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JP2011187925A JP2011187925A (ja) 2011-09-22
JP2011187925A5 JP2011187925A5 (enExample) 2014-01-09
JP5732827B2 true JP5732827B2 (ja) 2015-06-10

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US (4) US8427860B2 (enExample)
JP (1) JP5732827B2 (enExample)
KR (1) KR101785727B1 (enExample)
CN (1) CN102194512B (enExample)
TW (1) TWI443821B (enExample)

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JP2011187925A (ja) 2011-09-22
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CN102194512A (zh) 2011-09-21
US20140183438A1 (en) 2014-07-03
US20130240818A1 (en) 2013-09-19
US9240549B2 (en) 2016-01-19
US20160079528A1 (en) 2016-03-17
TW201143082A (en) 2011-12-01
TWI443821B (zh) 2014-07-01
US8730709B2 (en) 2014-05-20
KR20110093620A (ko) 2011-08-18
US20110194329A1 (en) 2011-08-11
US8427860B2 (en) 2013-04-23
US9543514B2 (en) 2017-01-10

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