JP2011108845A - 半導体光増幅素子 - Google Patents
半導体光増幅素子 Download PDFInfo
- Publication number
- JP2011108845A JP2011108845A JP2009262304A JP2009262304A JP2011108845A JP 2011108845 A JP2011108845 A JP 2011108845A JP 2009262304 A JP2009262304 A JP 2009262304A JP 2009262304 A JP2009262304 A JP 2009262304A JP 2011108845 A JP2011108845 A JP 2011108845A
- Authority
- JP
- Japan
- Prior art keywords
- active core
- core layer
- layer
- semiconductor
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】第1の活性コア層を有する入力側光増幅導波路部と、前記入力側光増幅導波路部に接続し、前記第1の活性コア層よりも幅の広い第2の活性コア層を有する出力側光増幅導波路部と、を備え、前記第1の活性コア層と前記第1の活性コア層の幅方向に隣接するクラッド部との比屈折率差、および前記第2の活性コア層と前記第2の活性コア層の幅方向に隣接するクラッド部との比屈折率差が、前記第1の活性コア層におけるキャリア密度および光閉じ込め係数が前記第2の活性コア層におけるキャリア密度および光閉じ込め係数のそれぞれよりも高くなるように、設定されている。
【選択図】図1
Description
なお、式(1)において、hはプランク定数、Γは光増幅を行う導波路構造における、活性コア層への光閉じ込め係数、Agは微分利得係数、τは光の減衰時間、Wは活性コア層の幅、dは活性コア層の厚さを示す。
なお、式(2)において、n0は透明キャリア密度を示す。
なお、式(3)において、αは光の損失係数を示す。
本発明の実施の形態1として、波長1.55μm帯の光を増幅するための半導体光増幅素子について説明する。図1は、本発明の実施の形態1に係る半導体光増幅素子100の模式的な平面図である。図1に示すように、この半導体光増幅素子100は、入力側光増幅導波路部1と、入力側光増幅導波路部1に接続した出力側光増幅導波路部2とを備えており、入力部100aから入力された入力信号光ILを増幅して出力信号光OLとして出力部100bから出力するものである。また、符号3はポリイミドからなる電極パッド支持材、符号4は誘電体保護膜、符号5は入力側p側電極、符号7は出力側p側電極、符号6、8は電極パッドを示す。入力側p側電極5の幅W1と出力側p側電極7の幅W2とを例示すると、幅W1は1.5μmであり、幅W2は20μmである。入力側p側電極5と出力側p側電極7との間にはたとえば10μmの幅W3が形成されており、電気的に分離されている。また、電極パッド8の長さL1、幅W4を例示すると、長さL1は200μmであり、幅W4は600μmである。電極パッド6は電極パッド8と同じ大きさである。
つぎに、本実施の形態1に係る半導体光増幅素子100の製造方法について説明する。図7〜10は、図1に示す半導体光増幅素子100の製造方法の一例の説明図である。なお、図7、9は、図1に示すA−A線断面を参照して説明しており、図7では主に素子全体の共通構造を形成する工程について説明し、図9では出力側光増幅導波路部2の構造を形成する工程について説明する。また、図8、10では、B−B線断面を参照して、入力側光増幅導波路部1の構造を形成する工程について説明する。
本発明の実施例として、実施の形態1と同様の構造の半導体光増幅素子を作製し、比較例として、図13に示す従来の構造の半導体光増幅素子を作製した。なお、比較例の従来の半導体光増幅素子のサイズ、材質は実施例と同様とした。そして、実施例および比較例に係る半導体光増幅素子について、入力部から波長1.55μm、強度0dBmの信号光を入力し、駆動電流を変化させながら光出力を測定した。
2 出力側光増幅導波路部
3 電極パッド支持材
4 誘電体保護膜
5 入力側p側電極
6、8 電極パッド
7 出力側p側電極
10 基板
11 n側電極
12 下部クラッド層
13 半導体活性層
13a 第1の活性コア層
13b 第2の活性コア層
13ba テーパ部
13bb 等幅部
14、15、17 上部クラッド層
16 電流阻止半導体層
16a 下部電流阻止半導体層
16b 上部電流阻止半導体層
18 コンタクト層
19 半導体保護層
20 誘電体保護膜
100 半導体光増幅素子
100a 入力部
100b 出力部
C1、C2 曲線
Cap キャップ層
D1、D2 電界強度分布
E1〜E4 膜
HM ハイメサ構造
IL 入力信号光
L1〜L4 長さ
M1、M2 マスク
OL 出力信号光
R1〜R6 レジスト
W1〜W7 幅
Claims (4)
- 第1の活性コア層を有する入力側光増幅導波路部と、
前記入力側光増幅導波路部に接続し、前記第1の活性コア層よりも幅の広い第2の活性コア層を有する出力側光増幅導波路部と、
を備え、前記第1の活性コア層の幅および前記第1の活性コア層と前記第1の活性コア層の幅方向に隣接するクラッド部との比屈折率差、ならびに前記第2の活性コア層の幅および前記第2の活性コア層と前記第2の活性コア層の幅方向に隣接するクラッド部との比屈折率差が、前記第1の活性コア層におけるキャリア密度および光閉じ込め係数が前記第2の活性コア層におけるキャリア密度および光閉じ込め係数のそれぞれよりも高くなるように、設定されていることを特徴とする半導体光増幅素子。 - 前記第1の活性コア層の幅方向に隣接するクラッド部はポリイミドからなり、前記第2の活性コア層の幅方向に隣接するクラッド部は半導体からなることを特徴とする請求項1に記載の半導体光増幅素子。
- 前記入力側光増幅導波路部において、少なくとも前記第1の活性コア層の側面に形成された半導体保護層をさらに備えることを特徴とする請求項2に記載の半導体光増幅素子。
- 前記入力側光増幅導波路部に電力を供給する入力側電極と、前記入力側電極とは電気的に分離するように設けられ、前記出力側光増幅導波路部に電力を供給する出力側電極とを備えることを特徴とする請求項1〜3のいずれか一つに記載の半導体光増幅素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009262304A JP5323648B2 (ja) | 2009-11-17 | 2009-11-17 | 半導体光増幅素子 |
PCT/JP2010/070468 WO2011062181A1 (ja) | 2009-11-17 | 2010-11-17 | 半導体光増幅素子 |
US13/472,029 US8625194B2 (en) | 2009-11-17 | 2012-05-15 | Semiconductor optical amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009262304A JP5323648B2 (ja) | 2009-11-17 | 2009-11-17 | 半導体光増幅素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011108845A true JP2011108845A (ja) | 2011-06-02 |
JP5323648B2 JP5323648B2 (ja) | 2013-10-23 |
Family
ID=44059659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009262304A Expired - Fee Related JP5323648B2 (ja) | 2009-11-17 | 2009-11-17 | 半導体光増幅素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8625194B2 (ja) |
JP (1) | JP5323648B2 (ja) |
WO (1) | WO2011062181A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013165262A (ja) * | 2012-01-13 | 2013-08-22 | Sumitomo Electric Ind Ltd | 光半導体素子の製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5567226B2 (ja) | 2012-05-31 | 2014-08-06 | 古河電気工業株式会社 | 半導体レーザモジュール |
JP2017050318A (ja) | 2015-08-31 | 2017-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03228380A (ja) * | 1990-02-02 | 1991-10-09 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子 |
JPH05218594A (ja) * | 1991-09-30 | 1993-08-27 | Xerox Corp | モノリシック集積マスター発振電力増幅器 |
JPH08340147A (ja) * | 1995-06-13 | 1996-12-24 | Hitachi Ltd | 半導体レーザ装置 |
JPH10512720A (ja) * | 1995-11-08 | 1998-12-02 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | レーザ増幅器として使用可能な半導体ダイオードレーザ及びその製造方法 |
JPH10341061A (ja) * | 1997-06-09 | 1998-12-22 | Fuji Photo Film Co Ltd | 半導体光増幅素子 |
JP2002232083A (ja) * | 2001-02-07 | 2002-08-16 | Nippon Telegr & Teleph Corp <Ntt> | 光増幅器 |
JP2003069162A (ja) * | 2001-08-29 | 2003-03-07 | Nippon Telegr & Teleph Corp <Ntt> | 光増幅器 |
JP2005276904A (ja) * | 2004-03-23 | 2005-10-06 | Anritsu Corp | 半導体発光素子 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5003550A (en) * | 1990-03-09 | 1991-03-26 | Spectra Diode Laboratories, Inc. | Integrated laser-amplifier with steerable beam |
US5228049A (en) * | 1991-08-27 | 1993-07-13 | Xerox Corporation | Beam control in integrated diode laser and power amplifier |
US5537432A (en) * | 1993-01-07 | 1996-07-16 | Sdl, Inc. | Wavelength-stabilized, high power semiconductor laser |
US5499261A (en) * | 1993-01-07 | 1996-03-12 | Sdl, Inc. | Light emitting optical device with on-chip external cavity reflector |
US5392308A (en) * | 1993-01-07 | 1995-02-21 | Sdl, Inc. | Semiconductor laser with integral spatial mode filter |
US5802084A (en) * | 1994-11-14 | 1998-09-01 | The Regents Of The University Of California | Generation of high power optical pulses using flared mode-locked semiconductor lasers and optical amplifiers |
US5889898A (en) * | 1997-02-10 | 1999-03-30 | Lucent Technologies Inc. | Crosstalk-reduced integrated digital optical switch |
US5909614A (en) * | 1997-12-08 | 1999-06-01 | Krivoshlykov; Sergei G. | Method of improving performance of semiconductor light emitting device |
JP4789320B2 (ja) * | 2000-12-01 | 2011-10-12 | 富士通株式会社 | 半導体光増幅器 |
CA2453760A1 (en) * | 2002-12-20 | 2004-06-20 | Spectalis Corp. | External-cavity lasers |
US20060222024A1 (en) * | 2005-03-15 | 2006-10-05 | Gray Allen L | Mode-locked semiconductor lasers with quantum-confined active region |
EP1986296A1 (en) * | 2006-02-16 | 2008-10-29 | Fujitsu Ltd. | Semiconductor light amplifier |
JP2009021454A (ja) | 2007-07-13 | 2009-01-29 | Yokogawa Electric Corp | 半導体光素子 |
-
2009
- 2009-11-17 JP JP2009262304A patent/JP5323648B2/ja not_active Expired - Fee Related
-
2010
- 2010-11-17 WO PCT/JP2010/070468 patent/WO2011062181A1/ja active Application Filing
-
2012
- 2012-05-15 US US13/472,029 patent/US8625194B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03228380A (ja) * | 1990-02-02 | 1991-10-09 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子 |
JPH05218594A (ja) * | 1991-09-30 | 1993-08-27 | Xerox Corp | モノリシック集積マスター発振電力増幅器 |
JPH08340147A (ja) * | 1995-06-13 | 1996-12-24 | Hitachi Ltd | 半導体レーザ装置 |
JPH10512720A (ja) * | 1995-11-08 | 1998-12-02 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | レーザ増幅器として使用可能な半導体ダイオードレーザ及びその製造方法 |
JPH10341061A (ja) * | 1997-06-09 | 1998-12-22 | Fuji Photo Film Co Ltd | 半導体光増幅素子 |
JP2002232083A (ja) * | 2001-02-07 | 2002-08-16 | Nippon Telegr & Teleph Corp <Ntt> | 光増幅器 |
JP2003069162A (ja) * | 2001-08-29 | 2003-03-07 | Nippon Telegr & Teleph Corp <Ntt> | 光増幅器 |
JP2005276904A (ja) * | 2004-03-23 | 2005-10-06 | Anritsu Corp | 半導体発光素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013165262A (ja) * | 2012-01-13 | 2013-08-22 | Sumitomo Electric Ind Ltd | 光半導体素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8625194B2 (en) | 2014-01-07 |
US20120243074A1 (en) | 2012-09-27 |
WO2011062181A1 (ja) | 2011-05-26 |
JP5323648B2 (ja) | 2013-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5387671B2 (ja) | 半導体レーザ及び集積素子 | |
US20160336719A1 (en) | Integrated semiconductor laser device and semiconductor laser module | |
JP2009088392A (ja) | 半導体発光素子及びその製造方法 | |
JP2012004441A (ja) | 光増幅装置 | |
JP2010232371A (ja) | 半導体光増幅素子 | |
KR100520796B1 (ko) | 평면 매립형 반도체 광 증폭기의 제작 방법 | |
KR100912564B1 (ko) | 반도체 광 소자 및 그 제조 방법 | |
JP5323648B2 (ja) | 半導体光増幅素子 | |
JP5314435B2 (ja) | 集積光デバイス及びその製造方法 | |
JP2000269587A (ja) | 光半導体装置及びその製造方法 | |
JP4825150B2 (ja) | 光半導体集積素子及びその製造方法 | |
JP2006196805A (ja) | 半導体レーザ | |
JP4599700B2 (ja) | 分布帰還型半導体レーザ | |
JP2009206463A (ja) | 半導体発光素子 | |
JP2014236161A (ja) | 半導体光素子およびその製造方法ならびに集積型半導体光素子 | |
JP2009260192A (ja) | 半導体光集積素子及びその製造方法 | |
JP4769778B2 (ja) | 光半導体素子及びその製造方法 | |
JP5277877B2 (ja) | 光導波路素子の製造方法 | |
JP4615184B2 (ja) | 分布帰還型半導体レーザ素子 | |
JP2014135351A (ja) | 半導体光素子、集積型半導体光素子およびその製造方法 | |
JPH11223739A (ja) | 集積型光回路素子及びその製造方法 | |
JP2011233828A (ja) | 半導体光素子 | |
JP3691507B2 (ja) | 半導体レーザ | |
JP2005158953A (ja) | 半導体レーザ素子およびその製造方法 | |
JP2006047666A (ja) | 半導体フォトニック結晶導波路構造及びそれを使用した半導体フォトニック結晶デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120801 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121211 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130625 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130717 |
|
LAPS | Cancellation because of no payment of annual fees |