JP2011103307A - 異方性導電フィルム - Google Patents
異方性導電フィルム Download PDFInfo
- Publication number
- JP2011103307A JP2011103307A JP2011008813A JP2011008813A JP2011103307A JP 2011103307 A JP2011103307 A JP 2011103307A JP 2011008813 A JP2011008813 A JP 2011008813A JP 2011008813 A JP2011008813 A JP 2011008813A JP 2011103307 A JP2011103307 A JP 2011103307A
- Authority
- JP
- Japan
- Prior art keywords
- anisotropic conductive
- conductive film
- semiconductor chip
- bump
- melt viscosity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
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- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
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- 238000007772 electroless plating Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- XRPZVNIXPWZPCA-UHFFFAOYSA-N ethenyl acetate;styrene Chemical compound CC(=O)OC=C.C=CC1=CC=CC=C1 XRPZVNIXPWZPCA-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- RRIWRJBSCGCBID-UHFFFAOYSA-L nickel sulfate hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-]S([O-])(=O)=O RRIWRJBSCGCBID-UHFFFAOYSA-L 0.000 description 1
- 229940116202 nickel sulfate hexahydrate Drugs 0.000 description 1
- FYWSTUCDSVYLPV-UHFFFAOYSA-N nitrooxythallium Chemical compound [Tl+].[O-][N+]([O-])=O FYWSTUCDSVYLPV-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- XYJRXVWERLGGKC-UHFFFAOYSA-D pentacalcium;hydroxide;triphosphate Chemical compound [OH-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O XYJRXVWERLGGKC-UHFFFAOYSA-D 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
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- 229920000346 polystyrene-polyisoprene block-polystyrene Polymers 0.000 description 1
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- 239000002244 precipitate Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
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- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/29347—Copper [Cu] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29455—Nickel [Ni] as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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Abstract
【解決手段】導電性粒子が絶縁性接着剤に分散されてなる異方性導電フィルムは、回復率が10〜46%の導電性粒子を使用する。また、異方性導電フィルムの最低溶融粘度を[η0]とし、最低溶融粘度を示す温度T0より60℃低い温度T1における溶融粘度を[η1]としたときに、以下の式(1)及び(2)を満足する。
1.0×102Pa・sec≦[η0]≦1.0×106Pa・sec (1)
1<[η1]/[η0]≦30 (2)
【選択図】なし
Description
導電性粒子の回復率が10〜46%であり、
異方性導電フィルムの最低溶融粘度を[η0]とし、最低溶融粘度を示す温度T0より60℃低い温度T1における溶融粘度を[η1]としたときに、以下の式(1)及び(2)を満足することを特徴とする異方性導電フィルムを提供する。
配線基板の電極上に上述の本発明の異方性導電フィルムを仮貼りし、
仮貼りされた異方性導電フィルムに半導体チップをそのバンプ側から仮設置し、
仮設置された半導体チップを加熱ボンダーにより加熱加圧することにより、半導体チップのバンプと配線基板の電極とを異方性導電接続し、異方性導電フィルムを熱硬化させる製造方法、及びその製造方法により製造された接続構造体を提供する。
導電性粒子の回復率が10〜46%であり、
異方性導電フィルムの最低溶融粘度を[η0]とし、最低溶融粘度を示す温度T0より60℃低い温度T1における溶融粘度を[η1]としたときに、以下の式(1)及び(2)を満足することを特徴とする異方性導電フィルムである。
ジビニルベンゼン、スチレン、ブチルメタクリレートの混合比を調整したモノマー溶液に、重合開始剤としてベンゾイルパーオキサイドを投入し、得られた混合液を高速で均一に撹拌しながら加熱することによりモノマーの重合反応を行い、それにより微粒子分散液を得た。この微粒子分散液から微粒子をろ別し、減圧乾燥することにより微粒子の凝集体であるブロック体を得た。更に、このブロック体を粉砕することにより、平均粒子径3.0μmのスチレン系樹脂粒子を得た。
温度計、窒素導入管、撹拌機及びコンデンサーを備えたガラス製反応器に、水300質量部、部分鹸化ポリビニルアルコール(ゴーセーノールKH−17、日本合成化学工業社製)の1%水溶液15質量部及びハイドロキシアパタイトの10%水分散液(スーパータイト10、日本化学工業社製)15質量部を仕込んだ。ポリメリックペルオキシド類0.5質量部を前記水溶液に室温下で1時間分散させた後に酢酸ビニル30質量部を仕込み、反応器内に窒素を導入しながら、撹拌下60℃で2時間重合(第一段重合)を行った。その後、室温まで冷却し、反応器にスチレン70質量部を仕込み、室温で撹拌を1時間行った。更に、反応器に窒素を導入しながら、80℃で8時間撹拌し、90℃で30分間重合を行った。(第二段重合)。その後、反応混合物を室温まで冷却して沈殿物として重合物を得た。得られた重合物を5%塩酸130質量部で洗浄し、続いて水で洗浄して濾別した。得られた重合物を乾燥することにより白色粒子状のスチレン系ブロック共重合体を85%の収率で得た。このブロック共重合体中の、スチレンと酢酸ビニルの共重合組成比は70:30であった。
表1の成分(質量部)を、遊星撹拌機を用いて均一に混合することで塗料を調製し、その塗料を剥離フィルムに塗布し、80℃で5分間プリベークすることで異方性導電フィルムを作成した。なお、導電性粒子の配合量は、粒子密度50000個/mm2となるようにした。得られた異方性導電フィルムについて、以下に説明するように溶融粘度と導通抵抗とを測定し、更に異方性導電接続に適用した際の圧痕を観察した。
異方性導電フィルムの溶融粘度を、回転式レオメータ(TA Instruments社)を用い、昇温速度 10℃/分;測定圧力 5g一定;使用測定プレート直径 8mmという条件で測定した。得られた最低溶融粘度[η0](Pa・sec)を表1に示す。また、T0から60℃低い温度T1における溶融粘度[η1](Pa・sec)を測定し、[η1]/[η0]を計算し、得られた結果を表1に示す。
異方性導電フィルムを、周縁部に3列千鳥配置された金バンプを有する試験用半導体チップ(バンプサイズ 1800μm2、バンプ高さ 15μm、外側バンプ列と中央バンプ列及び中央バンプ列と内側バンプ列間のそれぞれの距離 20μm、各列内のバンプ間の距離 20μm)と、対応するガラス基板との間に挟持させ、加熱加圧ヘッドにて200℃で圧力 60MPaで5秒間の加熱加圧を行った。その際の外側バンプと中央バンプ列との導通抵抗(Ω)を常法に従って測定し、以下の基準で評価した。得られた結果を表1に示す。
AA: 導通抵抗値が3Ω未満
A: 導通抵抗値が3Ω以上10Ω未満
B: 導通抵抗値が10Ω以上30Ω未満
C: 導通抵抗値が30Ω以上
導通抵抗測定に供した熱圧着サンプルのガラス基板側から、異方性導電フィルムの異方性導電接続部における、3列千鳥配列バンプの長手方向の中央位置、バンプ列の長手方向の全長Lの0.1L及び0.9Lの位置の3カ所を倍率10倍で顕微鏡観察し、圧痕の均一性について以下の基準で評価した。得られた結果を表1に示す。
AA: 3つの観察位置についてそれぞれ10ヶ所観察した結果、いずれの観察位置においても9ヶ所以上で圧痕が観察された場合
A: 3つの観察位置についてそれぞれ10ヶ所観察した結果、いずれかの観察位置において7ヶ所又は8ヶ所で圧痕が観察され、それ以外では9ヶ所以上で圧痕が観察された場合
B: 3つの観察位置についてそれぞれ10ヶ所観察した結果、いずれの観察位置において5ヶ所又は6ヶ所で圧痕が観察され、それ以外では9ヶ所以上で圧痕が観察された場合
C: 3つの観察位置についてそれぞれ10ヶ所観察した結果、いずれかの観察位置で圧痕が観察できたのが5箇所未満であった場合
Claims (5)
- 半導体チップのバンプと配線基板の電極とを異方性導電接続することにより接続構造体を製造する方法において、
配線基板の電極上に請求項1記載の異方性導電フィルムを仮貼りし、
仮貼りされた異方性導電フィルムに半導体チップをそのバンプ側から仮設置し、
仮設置された半導体チップを加熱ボンダーにより加熱加圧することにより、半導体チップのバンプと配線基板の電極とを異方性導電接続し、異方性導電フィルムを熱硬化させる製造方法。 - 半導体チップとして、2列又は3列の千鳥配列のバンプを有するものを使用する請求項3記載の製造方法。
- 請求項3又は4記載の製造方法により製造された接続構造体。
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JP2016124933A (ja) * | 2014-12-26 | 2016-07-11 | 株式会社タムラ製作所 | 異方性導電性ペーストおよびそれを用いたプリント配線基板 |
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JP2017059471A (ja) * | 2015-09-18 | 2017-03-23 | デクセリアルズ株式会社 | 接続材料 |
CN105405784A (zh) * | 2015-10-31 | 2016-03-16 | 芜湖宏景电子股份有限公司 | 一种主动均衡模组的制作工艺 |
JP2020095941A (ja) * | 2018-10-03 | 2020-06-18 | デクセリアルズ株式会社 | 異方性導電フィルム、接続構造体、接続構造体の製造方法 |
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JP2009032657A (ja) * | 2007-06-26 | 2009-02-12 | Sony Chemical & Information Device Corp | 異方性導電材料、接続構造体及びその製造方法 |
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JP2014081928A (ja) * | 2012-09-25 | 2014-05-08 | Sekisui Chem Co Ltd | タッチパネル用導電性粒子、タッチパネル用導電材料及びタッチパネル用接続構造体 |
JP2016124933A (ja) * | 2014-12-26 | 2016-07-11 | 株式会社タムラ製作所 | 異方性導電性ペーストおよびそれを用いたプリント配線基板 |
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