JP2011100877A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP2011100877A
JP2011100877A JP2009255078A JP2009255078A JP2011100877A JP 2011100877 A JP2011100877 A JP 2011100877A JP 2009255078 A JP2009255078 A JP 2009255078A JP 2009255078 A JP2009255078 A JP 2009255078A JP 2011100877 A JP2011100877 A JP 2011100877A
Authority
JP
Japan
Prior art keywords
region
semiconductor layer
contact
contact hole
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009255078A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011100877A5 (enExample
Inventor
Takeru Matsuoka
長 松岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2009255078A priority Critical patent/JP2011100877A/ja
Priority to US12/885,395 priority patent/US8350322B2/en
Publication of JP2011100877A publication Critical patent/JP2011100877A/ja
Publication of JP2011100877A5 publication Critical patent/JP2011100877A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2009255078A 2009-11-06 2009-11-06 半導体装置及びその製造方法 Pending JP2011100877A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009255078A JP2011100877A (ja) 2009-11-06 2009-11-06 半導体装置及びその製造方法
US12/885,395 US8350322B2 (en) 2009-11-06 2010-09-17 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009255078A JP2011100877A (ja) 2009-11-06 2009-11-06 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2011100877A true JP2011100877A (ja) 2011-05-19
JP2011100877A5 JP2011100877A5 (enExample) 2012-04-26

Family

ID=43973520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009255078A Pending JP2011100877A (ja) 2009-11-06 2009-11-06 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US8350322B2 (enExample)
JP (1) JP2011100877A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016111207A (ja) * 2014-12-08 2016-06-20 三菱電機株式会社 電力用半導体装置
US9698221B2 (en) 2014-05-01 2017-07-04 Mitsubishi Electric Corporation Semiconductor device
WO2017138505A1 (ja) * 2016-02-12 2017-08-17 パナソニック株式会社 半導体装置
JP2019161190A (ja) * 2018-03-16 2019-09-19 株式会社東芝 半導体装置
JP2020102540A (ja) * 2018-12-21 2020-07-02 トヨタ自動車株式会社 半導体装置
JP2020170807A (ja) * 2019-04-04 2020-10-15 富士電機株式会社 半導体装置及び半導体装置の製造方法
WO2021049090A1 (ja) * 2019-09-13 2021-03-18 株式会社日立パワーデバイス 半導体装置および電力変換装置
JPWO2020145109A1 (ja) * 2019-01-08 2021-09-30 三菱電機株式会社 半導体装置及び電力変換装置
JPWO2022034636A1 (enExample) * 2020-08-11 2022-02-17

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176026A (ja) * 2010-02-23 2011-09-08 Fuji Electric Co Ltd 半導体素子の製造方法
JP2013065749A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置
US8969960B2 (en) * 2011-09-21 2015-03-03 Mitsubishi Electric Corporation Power semiconductor device
US10249721B2 (en) 2013-04-04 2019-04-02 Infineon Technologies Austria Ag Semiconductor device including a gate trench and a source trench
WO2014192198A1 (ja) * 2013-05-29 2014-12-04 パナソニックＩｐマネジメント株式会社 半導体装置
US9666663B2 (en) * 2013-08-09 2017-05-30 Infineon Technologies Ag Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
JP6168961B2 (ja) * 2013-10-10 2017-07-26 三菱電機株式会社 半導体装置
US9178015B2 (en) 2014-01-10 2015-11-03 Vishay General Semiconductor Llc Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
CN113690337B (zh) * 2021-09-13 2023-12-08 武汉新芯集成电路制造有限公司 单光子雪崩二极管及其制作方法、单光子雪崩二极管阵列
CN114429982A (zh) * 2022-01-06 2022-05-03 上海华虹宏力半导体制造有限公司 沟槽型功率器件
CN114429981A (zh) * 2022-01-06 2022-05-03 上海华虹宏力半导体制造有限公司 沟槽型功率器件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04229661A (ja) * 1990-06-08 1992-08-19 Nippondenso Co Ltd 絶縁ゲート型バイポーラトランジスタおよびその製造方法
JPH05102487A (ja) * 1991-10-07 1993-04-23 Nippondenso Co Ltd 縦型半導体装置
JP2000101085A (ja) * 1998-09-18 2000-04-07 Siemens Ag 半導体モジュ―ル用の高電圧耐性を有する縁部構造体
JP2005019734A (ja) * 2003-06-26 2005-01-20 Renesas Technology Corp 半導体装置およびその製造方法
JP2006526286A (ja) * 2003-05-31 2006-11-16 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 終端構造を有する半導体装置及びこの装置の製造方法
JP2008117826A (ja) * 2006-11-01 2008-05-22 Toshiba Corp 電力用半導体素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086801A (ja) 2001-09-13 2003-03-20 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2004281524A (ja) 2003-03-13 2004-10-07 Sanyo Electric Co Ltd 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04229661A (ja) * 1990-06-08 1992-08-19 Nippondenso Co Ltd 絶縁ゲート型バイポーラトランジスタおよびその製造方法
JPH05102487A (ja) * 1991-10-07 1993-04-23 Nippondenso Co Ltd 縦型半導体装置
JP2000101085A (ja) * 1998-09-18 2000-04-07 Siemens Ag 半導体モジュ―ル用の高電圧耐性を有する縁部構造体
JP2006526286A (ja) * 2003-05-31 2006-11-16 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 終端構造を有する半導体装置及びこの装置の製造方法
JP2005019734A (ja) * 2003-06-26 2005-01-20 Renesas Technology Corp 半導体装置およびその製造方法
JP2008117826A (ja) * 2006-11-01 2008-05-22 Toshiba Corp 電力用半導体素子

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698221B2 (en) 2014-05-01 2017-07-04 Mitsubishi Electric Corporation Semiconductor device
JP2016111207A (ja) * 2014-12-08 2016-06-20 三菱電機株式会社 電力用半導体装置
WO2017138505A1 (ja) * 2016-02-12 2017-08-17 パナソニック株式会社 半導体装置
JPWO2017138505A1 (ja) * 2016-02-12 2018-12-06 パナソニック株式会社 半導体装置
US10529843B2 (en) 2016-02-12 2020-01-07 Panasonic Corporation Semiconductor device
JP2019161190A (ja) * 2018-03-16 2019-09-19 株式会社東芝 半導体装置
JP2020102540A (ja) * 2018-12-21 2020-07-02 トヨタ自動車株式会社 半導体装置
JPWO2020145109A1 (ja) * 2019-01-08 2021-09-30 三菱電機株式会社 半導体装置及び電力変換装置
DE112019006587T5 (de) 2019-01-08 2021-12-23 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandlereinheit
JP6991370B2 (ja) 2019-01-08 2022-01-12 三菱電機株式会社 半導体装置及び電力変換装置
US12051744B2 (en) 2019-01-08 2024-07-30 Mitsubishi Electric Corporation Semiconductor device
JP2020170807A (ja) * 2019-04-04 2020-10-15 富士電機株式会社 半導体装置及び半導体装置の製造方法
US11387318B2 (en) 2019-04-04 2022-07-12 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing a semiconductor device
JP7272071B2 (ja) 2019-04-04 2023-05-12 富士電機株式会社 半導体装置及び半導体装置の製造方法
WO2021049090A1 (ja) * 2019-09-13 2021-03-18 株式会社日立パワーデバイス 半導体装置および電力変換装置
JP2021044462A (ja) * 2019-09-13 2021-03-18 株式会社 日立パワーデバイス 半導体装置および電力変換装置
JP7171527B2 (ja) 2019-09-13 2022-11-15 株式会社 日立パワーデバイス 半導体装置および電力変換装置
US12300716B2 (en) 2019-09-13 2025-05-13 Hitachi Power Semiconductor Device, Ltd. Semiconductor device and power conversion device
JPWO2022034636A1 (enExample) * 2020-08-11 2022-02-17
JP7332812B2 (ja) 2020-08-11 2023-08-23 三菱電機株式会社 炭化珪素半導体装置および電力変換装置

Also Published As

Publication number Publication date
US8350322B2 (en) 2013-01-08
US20110108911A1 (en) 2011-05-12

Similar Documents

Publication Publication Date Title
JP2011100877A (ja) 半導体装置及びその製造方法
JP7182594B2 (ja) ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法
US9263572B2 (en) Semiconductor device with bottom gate wirings
JP4892172B2 (ja) 半導体装置およびその製造方法
JP4609656B2 (ja) トレンチ構造半導体装置
CN102299180B (zh) 包含单元区和具有高击穿电压结构的外围区的半导体器件
US8269272B2 (en) Semiconductor device and method for manufacturing the same
US9190504B2 (en) Semiconductor device
JP5136578B2 (ja) 半導体装置
JP5795452B1 (ja) 炭化ケイ素半導体装置、炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置の設計方法
JP2013258327A (ja) 半導体装置及びその製造方法
JP2009043966A (ja) 半導体装置及びその製造方法
WO2023112547A1 (ja) 半導体装置
JP4929594B2 (ja) 半導体装置および半導体装置の製造方法
KR101667499B1 (ko) 반도체 장치 및 그 제조 방법
JP2015056643A (ja) 半導体装置の製造方法
JP7647452B2 (ja) 半導体装置およびその製造方法
JP2011018764A (ja) 半導体装置
JP2008078282A (ja) 半導体装置及びその製造方法
JP2012059931A (ja) 半導体装置
JP2011003656A (ja) 半導体装置
JP4381435B2 (ja) 半導体装置および半導体装置の製造方法
US20150364585A1 (en) Power semiconductor device
JP7405230B2 (ja) スイッチング素子
KR102159418B1 (ko) 슈퍼 정션 mosfet 및 그 제조 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120308

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120308

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130924

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130926

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140204