JP2011029423A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2011029423A
JP2011029423A JP2009173929A JP2009173929A JP2011029423A JP 2011029423 A JP2011029423 A JP 2011029423A JP 2009173929 A JP2009173929 A JP 2009173929A JP 2009173929 A JP2009173929 A JP 2009173929A JP 2011029423 A JP2011029423 A JP 2011029423A
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Japan
Prior art keywords
semiconductor substrate
back surface
type semiconductor
diffusion layer
semiconductor device
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Pending
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JP2009173929A
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English (en)
Japanese (ja)
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JP2011029423A5 (enExample
Inventor
Yasuhiro Koseki
康弘 小関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009173929A priority Critical patent/JP2011029423A/ja
Publication of JP2011029423A publication Critical patent/JP2011029423A/ja
Publication of JP2011029423A5 publication Critical patent/JP2011029423A5/ja
Pending legal-status Critical Current

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JP2009173929A 2009-07-27 2009-07-27 半導体装置の製造方法 Pending JP2011029423A (ja)

Priority Applications (1)

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JP2009173929A JP2011029423A (ja) 2009-07-27 2009-07-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009173929A JP2011029423A (ja) 2009-07-27 2009-07-27 半導体装置の製造方法

Publications (2)

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JP2011029423A true JP2011029423A (ja) 2011-02-10
JP2011029423A5 JP2011029423A5 (enExample) 2012-03-29

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ID=43637828

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JP2009173929A Pending JP2011029423A (ja) 2009-07-27 2009-07-27 半導体装置の製造方法

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JP (1) JP2011029423A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106825A (ja) * 1981-12-18 1983-06-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH01220439A (ja) * 1988-02-29 1989-09-04 Nec Corp 半導体装置の製造方法
JPH04214671A (ja) * 1990-02-20 1992-08-05 Sgs Thomson Microelettronica Spa 半導体サブストレート裏面金属化方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106825A (ja) * 1981-12-18 1983-06-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH01220439A (ja) * 1988-02-29 1989-09-04 Nec Corp 半導体装置の製造方法
JPH04214671A (ja) * 1990-02-20 1992-08-05 Sgs Thomson Microelettronica Spa 半導体サブストレート裏面金属化方法

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