JP2010530640A5 - - Google Patents

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Publication number
JP2010530640A5
JP2010530640A5 JP2010513193A JP2010513193A JP2010530640A5 JP 2010530640 A5 JP2010530640 A5 JP 2010530640A5 JP 2010513193 A JP2010513193 A JP 2010513193A JP 2010513193 A JP2010513193 A JP 2010513193A JP 2010530640 A5 JP2010530640 A5 JP 2010530640A5
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JP
Japan
Prior art keywords
layer
exciton blocking
light emitting
hole transport
triplet energy
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JP2010513193A
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JP2010530640A (ja
JP5643086B2 (ja
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Priority claimed from US11/765,598 external-priority patent/US8034465B2/en
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Claims (3)

  1. a．アノードと；
    b．カソードと；
    c．上記アノードと上記カソードの間に配置された正孔輸送層と；
    d．上記正孔輸送層と上記カソードの間に配置されていて、少なくとも1種類のホストと少なくとも1種類のリン光ドーパントとを含むリン光発光層と；
    e．上記正孔輸送層と上記リン光発光層の間に配置されていて、そのリン光発光層に含まれるホストの三重項エネルギーよりも大きい三重項エネルギーを持つ第1のエキシトン阻止層と；
    f．上記第1のエキシトン阻止層と上記リン光発光層の間に配置されていて、そのリン光発光層に接触し、上記第1のエキシトン阻止層の三重項エネルギーよりも小さい三重項エネルギーを持つ第2のエキシトン阻止層と
    を備える有機発光デバイス。
  2. 上記第2のエキシトン阻止層がエキシトン阻止効果を増大させて上記正孔輸送層からの発光をなくす、請求項1に記載の有機発光デバイス。
  3. 上記第2のエキシトン阻止層が、上記第1のエキシトン阻止層の酸化電位よりも小さくない酸化電位を持つ、請求項1に記載の有機発光デバイス。
JP2010513193A 2007-06-20 2008-06-03 ２つのエキシトン阻止層を有するリン光ｏｌｅｄ Active JP5643086B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/765,598 2007-06-20
US11/765,598 US8034465B2 (en) 2007-06-20 2007-06-20 Phosphorescent oled having double exciton-blocking layers
PCT/US2008/006962 WO2008156554A1 (en) 2007-06-20 2008-06-03 Phosphorescent oled having double exciton-blocking layers

Publications (3)

Publication Number Publication Date
JP2010530640A JP2010530640A (ja) 2010-09-09
JP2010530640A5 true JP2010530640A5 (ja) 2011-06-23
JP5643086B2 JP5643086B2 (ja) 2014-12-17

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JP2010513193A Active JP5643086B2 (ja) 2007-06-20 2008-06-03 ２つのエキシトン阻止層を有するリン光ｏｌｅｄ

Country Status (7)

Country Link
US (1) US8034465B2 (ja)
EP (1) EP2158290B1 (ja)
JP (1) JP5643086B2 (ja)
KR (1) KR101182701B1 (ja)
CN (1) CN101679858B (ja)
TW (1) TWI379448B (ja)
WO (1) WO2008156554A1 (ja)

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