JP2010512669A5 - - Google Patents
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- Publication number
- JP2010512669A5 JP2010512669A5 JP2009541510A JP2009541510A JP2010512669A5 JP 2010512669 A5 JP2010512669 A5 JP 2010512669A5 JP 2009541510 A JP2009541510 A JP 2009541510A JP 2009541510 A JP2009541510 A JP 2009541510A JP 2010512669 A5 JP2010512669 A5 JP 2010512669A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
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- gas
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims description 26
- 239000002019 doping agent Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 7
- 230000008021 deposition Effects 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 4
- 238000010926 purge Methods 0.000 claims 4
- 229910000077 silane Inorganic materials 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical group [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 8
- 229910000085 borane Inorganic materials 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- OWQWEJKPOUNPPG-UHFFFAOYSA-M chloro(dimethyl)gallane Chemical compound C[Ga](C)Cl OWQWEJKPOUNPPG-UHFFFAOYSA-M 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- FAFYLCKQPJOORN-UHFFFAOYSA-N diethylborane Chemical compound CCBCC FAFYLCKQPJOORN-UHFFFAOYSA-N 0.000 description 1
- VZZJVOCVAZHETD-UHFFFAOYSA-N diethylphosphane Chemical compound CCPCC VZZJVOCVAZHETD-UHFFFAOYSA-N 0.000 description 1
- JGHYBJVUQGTEEB-UHFFFAOYSA-M dimethylalumanylium;chloride Chemical compound C[Al](C)Cl JGHYBJVUQGTEEB-UHFFFAOYSA-M 0.000 description 1
- GMLFPSKPTROTFV-UHFFFAOYSA-N dimethylborane Chemical compound CBC GMLFPSKPTROTFV-UHFFFAOYSA-N 0.000 description 1
- YOTZYFSGUCFUKA-UHFFFAOYSA-N dimethylphosphine Chemical compound CPC YOTZYFSGUCFUKA-UHFFFAOYSA-N 0.000 description 1
- AIGRXSNSLVJMEA-FQEVSTJZSA-N ethoxy-(4-nitrophenoxy)-phenyl-sulfanylidene-$l^{5}-phosphane Chemical compound O([P@@](=S)(OCC)C=1C=CC=CC=1)C1=CC=C([N+]([O-])=O)C=C1 AIGRXSNSLVJMEA-FQEVSTJZSA-N 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/609,590 | 2006-12-12 | ||
| US11/609,590 US20080138955A1 (en) | 2006-12-12 | 2006-12-12 | Formation of epitaxial layer containing silicon |
| PCT/US2007/087050 WO2008073926A2 (en) | 2006-12-12 | 2007-12-11 | Formation of epitaxial layers containing silicon |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010512669A JP2010512669A (ja) | 2010-04-22 |
| JP2010512669A5 true JP2010512669A5 (enExample) | 2010-12-02 |
| JP5808522B2 JP5808522B2 (ja) | 2015-11-10 |
Family
ID=39498580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009541510A Expired - Fee Related JP5808522B2 (ja) | 2006-12-12 | 2007-12-11 | シリコンを含有するエピタキシャル層の形成 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080138955A1 (enExample) |
| JP (1) | JP5808522B2 (enExample) |
| KR (1) | KR101432150B1 (enExample) |
| CN (2) | CN101548363A (enExample) |
| TW (1) | TWI383435B (enExample) |
| WO (1) | WO2008073926A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101470659B1 (ko) * | 2006-09-07 | 2014-12-08 | 액테리온 파마슈티칼 리미티드 | 면역조절제로서 피리딘-4-일 유도체 |
| MX2009002234A (es) * | 2006-09-08 | 2009-03-16 | Actelion Pharmaceuticals Ltd | Derivados de piridin-3-il como agentes inmunomoduladores. |
| US7833883B2 (en) * | 2007-03-28 | 2010-11-16 | Intel Corporation | Precursor gas mixture for depositing an epitaxial carbon-doped silicon film |
| US7994015B2 (en) | 2009-04-21 | 2011-08-09 | Applied Materials, Inc. | NMOS transistor devices and methods for fabricating same |
| US8999798B2 (en) * | 2009-12-17 | 2015-04-07 | Applied Materials, Inc. | Methods for forming NMOS EPI layers |
| DE102010055564A1 (de) * | 2010-12-23 | 2012-06-28 | Johann-Wolfgang-Goethe Universität Frankfurt am Main | Verfahren und Vorrichtung zur Abscheidung von Silizium auf einem Substrat |
| WO2012102755A1 (en) * | 2011-01-28 | 2012-08-02 | Applied Materials, Inc. | Carbon addition for low resistivity in situ doped silicon epitaxy |
| TWI521600B (zh) * | 2011-06-03 | 2016-02-11 | 應用材料股份有限公司 | 在矽基材上形成高生長速率低電阻率的鍺膜之方法〈一〉 |
| KR101371435B1 (ko) | 2012-01-04 | 2014-03-12 | 주식회사 유진테크 | 처리유닛을 포함하는 기판 처리 장치 |
| KR101677560B1 (ko) | 2014-03-18 | 2016-11-18 | 주식회사 유진테크 | 공정공간 높이별 가열온도를 조절할 수 있는 히터를 구비한 기판 처리 장치 |
| RU2618279C1 (ru) * | 2016-06-23 | 2017-05-03 | Акционерное общество "Эпиэл" | Способ изготовления эпитаксиального слоя кремния на диэлектрической подложке |
| US11018002B2 (en) * | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US11374112B2 (en) * | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11404270B2 (en) * | 2018-11-30 | 2022-08-02 | Texas Instruments Incorporated | Microelectronic device substrate formed by additive process |
| US10861715B2 (en) | 2018-12-28 | 2020-12-08 | Texas Instruments Incorporated | 3D printed semiconductor package |
| US10910465B2 (en) | 2018-12-28 | 2021-02-02 | Texas Instruments Incorporated | 3D printed semiconductor package |
| KR102189557B1 (ko) * | 2019-03-05 | 2020-12-11 | 에스케이머티리얼즈 주식회사 | 박막 트랜지스터 및 이의 제조방법 |
| EP3832696A1 (en) * | 2019-12-06 | 2021-06-09 | Imec VZW | Formation of a sige(:b):ga layer |
| KR20210156219A (ko) * | 2020-06-16 | 2021-12-24 | 에이에스엠 아이피 홀딩 비.브이. | 붕소를 함유한 실리콘 게르마늄 층을 증착하는 방법 |
| US11646204B2 (en) * | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
| CN115491655A (zh) * | 2022-10-05 | 2022-12-20 | 江苏筑磊电子科技有限公司 | 一种半导体技术中用于低温清洁和沉积的微波等离子辅助方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07118452B2 (ja) * | 1986-03-08 | 1995-12-18 | 日新電機株式会社 | シリコンエピタキシヤル成長方法 |
| US5177677A (en) * | 1989-03-08 | 1993-01-05 | Hitachi, Ltd. | Power conversion system |
| US5108792A (en) * | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
| US5322813A (en) * | 1992-08-31 | 1994-06-21 | International Business Machines Corporation | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
| KR100224707B1 (ko) * | 1995-12-23 | 1999-10-15 | 윤종용 | 반도체 장치 커패시터의 제조방법 |
| KR100200705B1 (ko) * | 1996-06-08 | 1999-06-15 | 윤종용 | 반도체 디바이스 제조장치, 제조장치의 공정 조건 조절방법 및 이를 이용한 커패시터 제조방법 |
| US6083321A (en) * | 1997-07-11 | 2000-07-04 | Applied Materials, Inc. | Fluid delivery system and method |
| DE69923436T2 (de) * | 1998-03-06 | 2006-01-05 | Asm America Inc., Phoenix | Verfahren zum beschichten von silizium mit hoher kantenabdeckung |
| TW473843B (en) * | 2000-03-03 | 2002-01-21 | Matsushita Electric Industrial Co Ltd | Semiconductor device |
| AU2002306436A1 (en) * | 2001-02-12 | 2002-10-15 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6803297B2 (en) * | 2002-09-20 | 2004-10-12 | Applied Materials, Inc. | Optimal spike anneal ambient |
| US6897131B2 (en) * | 2002-09-20 | 2005-05-24 | Applied Materials, Inc. | Advances in spike anneal processes for ultra shallow junctions |
| CN100471991C (zh) * | 2002-10-18 | 2009-03-25 | 应用材料有限公司 | 采用硅化合物进行的含硅层沉积 |
| US7540920B2 (en) * | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
| US6998153B2 (en) * | 2003-01-27 | 2006-02-14 | Applied Materials, Inc. | Suppression of NiSi2 formation in a nickel salicide process using a pre-silicide nitrogen plasma |
| WO2004084268A2 (en) * | 2003-03-13 | 2004-09-30 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
| US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
| US7166528B2 (en) * | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
| US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
| US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
| US7438760B2 (en) * | 2005-02-04 | 2008-10-21 | Asm America, Inc. | Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
| JP2006294953A (ja) * | 2005-04-13 | 2006-10-26 | Elpida Memory Inc | 半導体装置の製造方法及び製造装置 |
| US7648853B2 (en) * | 2006-07-11 | 2010-01-19 | Asm America, Inc. | Dual channel heterostructure |
-
2006
- 2006-12-12 US US11/609,590 patent/US20080138955A1/en not_active Abandoned
-
2007
- 2007-11-26 TW TW096144842A patent/TWI383435B/zh not_active IP Right Cessation
- 2007-12-11 JP JP2009541510A patent/JP5808522B2/ja not_active Expired - Fee Related
- 2007-12-11 CN CNA2007800444617A patent/CN101548363A/zh active Pending
- 2007-12-11 KR KR1020097013965A patent/KR101432150B1/ko not_active Expired - Fee Related
- 2007-12-11 WO PCT/US2007/087050 patent/WO2008073926A2/en not_active Ceased
- 2007-12-11 CN CN201410771429.0A patent/CN104599945B/zh not_active Expired - Fee Related
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