CN101548363A - 含硅外延层的形成 - Google Patents

含硅外延层的形成 Download PDF

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Publication number
CN101548363A
CN101548363A CNA2007800444617A CN200780044461A CN101548363A CN 101548363 A CN101548363 A CN 101548363A CN A2007800444617 A CNA2007800444617 A CN A2007800444617A CN 200780044461 A CN200780044461 A CN 200780044461A CN 101548363 A CN101548363 A CN 101548363A
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CN
China
Prior art keywords
silicon
source
deposition
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800444617A
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English (en)
Chinese (zh)
Inventor
叶祉渊
安德鲁·拉姆
金以宽
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Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201410771429.0A priority Critical patent/CN104599945B/zh
Publication of CN101548363A publication Critical patent/CN101548363A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
CNA2007800444617A 2006-12-12 2007-12-11 含硅外延层的形成 Pending CN101548363A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410771429.0A CN104599945B (zh) 2006-12-12 2007-12-11 含硅外延层的形成

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/609,590 2006-12-12
US11/609,590 US20080138955A1 (en) 2006-12-12 2006-12-12 Formation of epitaxial layer containing silicon

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201410771429.0A Division CN104599945B (zh) 2006-12-12 2007-12-11 含硅外延层的形成

Publications (1)

Publication Number Publication Date
CN101548363A true CN101548363A (zh) 2009-09-30

Family

ID=39498580

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201410771429.0A Expired - Fee Related CN104599945B (zh) 2006-12-12 2007-12-11 含硅外延层的形成
CNA2007800444617A Pending CN101548363A (zh) 2006-12-12 2007-12-11 含硅外延层的形成

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201410771429.0A Expired - Fee Related CN104599945B (zh) 2006-12-12 2007-12-11 含硅外延层的形成

Country Status (6)

Country Link
US (1) US20080138955A1 (enExample)
JP (1) JP5808522B2 (enExample)
KR (1) KR101432150B1 (enExample)
CN (2) CN104599945B (enExample)
TW (1) TWI383435B (enExample)
WO (1) WO2008073926A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112928014A (zh) * 2019-12-06 2021-06-08 Imec 非营利协会 SiGe(:B):Ga层的形成
CN113838794A (zh) * 2020-06-24 2021-12-24 Asm Ip私人控股有限公司 用于形成设置有硅的层的方法
CN115491655A (zh) * 2022-10-05 2022-12-20 江苏筑磊电子科技有限公司 一种半导体技术中用于低温清洁和沉积的微波等离子辅助方法

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KR101470659B1 (ko) * 2006-09-07 2014-12-08 액테리온 파마슈티칼 리미티드 면역조절제로서 피리딘-4-일 유도체
US8288554B2 (en) * 2006-09-08 2012-10-16 Actelion Pharmaceuticals Ltd. Pyridin-3-yl derivatives as immunomodulating agents
US7833883B2 (en) * 2007-03-28 2010-11-16 Intel Corporation Precursor gas mixture for depositing an epitaxial carbon-doped silicon film
US7994015B2 (en) * 2009-04-21 2011-08-09 Applied Materials, Inc. NMOS transistor devices and methods for fabricating same
US8999798B2 (en) * 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
DE102010055564A1 (de) * 2010-12-23 2012-06-28 Johann-Wolfgang-Goethe Universität Frankfurt am Main Verfahren und Vorrichtung zur Abscheidung von Silizium auf einem Substrat
WO2012102755A1 (en) * 2011-01-28 2012-08-02 Applied Materials, Inc. Carbon addition for low resistivity in situ doped silicon epitaxy
TWI521600B (zh) * 2011-06-03 2016-02-11 應用材料股份有限公司 在矽基材上形成高生長速率低電阻率的鍺膜之方法〈一〉
KR101371435B1 (ko) 2012-01-04 2014-03-12 주식회사 유진테크 처리유닛을 포함하는 기판 처리 장치
KR101677560B1 (ko) 2014-03-18 2016-11-18 주식회사 유진테크 공정공간 높이별 가열온도를 조절할 수 있는 히터를 구비한 기판 처리 장치
RU2618279C1 (ru) * 2016-06-23 2017-05-03 Акционерное общество "Эпиэл" Способ изготовления эпитаксиального слоя кремния на диэлектрической подложке
US11018002B2 (en) * 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) * 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11404270B2 (en) * 2018-11-30 2022-08-02 Texas Instruments Incorporated Microelectronic device substrate formed by additive process
US10861715B2 (en) 2018-12-28 2020-12-08 Texas Instruments Incorporated 3D printed semiconductor package
US10910465B2 (en) 2018-12-28 2021-02-02 Texas Instruments Incorporated 3D printed semiconductor package
KR102189557B1 (ko) * 2019-03-05 2020-12-11 에스케이머티리얼즈 주식회사 박막 트랜지스터 및 이의 제조방법
TW202208659A (zh) * 2020-06-16 2022-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積含硼之矽鍺層的方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112928014A (zh) * 2019-12-06 2021-06-08 Imec 非营利协会 SiGe(:B):Ga层的形成
CN113838794A (zh) * 2020-06-24 2021-12-24 Asm Ip私人控股有限公司 用于形成设置有硅的层的方法
CN113838794B (zh) * 2020-06-24 2024-09-27 Asmip私人控股有限公司 用于形成设置有硅的层的方法
CN115491655A (zh) * 2022-10-05 2022-12-20 江苏筑磊电子科技有限公司 一种半导体技术中用于低温清洁和沉积的微波等离子辅助方法

Also Published As

Publication number Publication date
JP2010512669A (ja) 2010-04-22
KR20090088431A (ko) 2009-08-19
TWI383435B (zh) 2013-01-21
CN104599945A (zh) 2015-05-06
TW200834667A (en) 2008-08-16
JP5808522B2 (ja) 2015-11-10
CN104599945B (zh) 2017-11-28
US20080138955A1 (en) 2008-06-12
KR101432150B1 (ko) 2014-08-20
WO2008073926A3 (en) 2009-01-15
WO2008073926A2 (en) 2008-06-19

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: American California

Applicant after: Applied Materials Inc.

Address before: American California

Applicant before: Applied Materials Inc.

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20090930