JP2010263196A - 半導体基板、半導体基板の製造方法、半導体基板の判定方法、および電子デバイス - Google Patents
半導体基板、半導体基板の製造方法、半導体基板の判定方法、および電子デバイス Download PDFInfo
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Abstract
【解決手段】2次元キャリアガスを生成する化合物半導体114と、当該化合物半導体114にキャリアを供給するキャリア供給半導体120と、当該化合物半導体114と当該キャリア供給半導体120との間に配置され、キャリアの移動度を当該化合物半導体におけるキャリアの移動度よりも小さくする移動度低減因子を有する移動度低減半導体116とを備える半導体基板。
【選択図】図1
Description
(特許文献1)特開平7−14850号公報
(特許文献2)特開平10−56168号公報
(特許文献3)特開平11−354776号公報
(特許文献4)特開2000−183334号公報
y=ax3+bx2+cx ・・・(式1)
式1において、xは電界強度を表す変数であり、yは電流を表す変数である。また、aは3次項係数、bは2次項係数、cは1次項係数である。
以下、実施例をもって、半導体基板判定方法を説明する。本実施例においては、図4に示した半導体基板400を用いて、電圧対電流特性の線形性の良否を判定した。ベース基板402としては、高抵抗の半絶縁性GaAs単結晶基板を用いた。前述のMOCVD法によって、ベース基板402に順次バッファ層404、バッファ層406、キャリア供給半導体408、スペーサー層410、移動度低減半導体412、化合物半導体414、移動度低減半導体416、スペーサー層418、キャリア供給半導体420、およびバリア形成半導体430をエピタキシャル成長させて、半導体基板400を準備した。
y=−0.000963x3−0.000226x2+0.0253x・・・(式2)
Claims (14)
- 2次元キャリアガスを生成する化合物半導体と、
前記化合物半導体にキャリアを供給するキャリア供給半導体と、
前記化合物半導体と前記キャリア供給半導体との間に配置され、前記キャリアの移動度を前記化合物半導体における前記キャリアの移動度よりも小さくする移動度低減因子を有する移動度低減半導体と
を備える半導体基板。 - 前記移動度低減半導体の内部では、基底状態にあるキャリアの存在確率よりも励起状態にあるキャリアの存在確率の方が高い
請求項1に記載の半導体基板。 - 前記励起状態が、キャリアが第1励起準位にある状態である
請求項2に記載の半導体基板。 - 前記化合物半導体上の異なる2点間に電圧が印加された場合に前記化合物半導体を流れる電流yを、前記電圧に対応し、−1.5[kV/cm]以上、+1.5[kV/cm]以下の範囲内で変化する電界強度xを変数とする近似多項式y=ax3+bx2+cxで表した場合に、前記近似多項式における3次項係数aの1次項係数cに対する比の絶対値|a/c|が、0.037[(kV/cm)−2]未満である
請求項1から請求項3の何れか一項に記載の半導体基板。 - 前記移動度低減因子は、不純物、結晶欠陥、低移動度材、またはバンド障壁材である
請求項1から請求項4の何れか一項に記載の半導体基板。 - 前記キャリアは電子であり、前記不純物はドナー不純物である
請求項5に記載の半導体基板。 - 前記キャリアは正孔であり、前記不純物はアクセプタ不純物である
請求項5に記載の半導体基板。 - 前記キャリア供給半導体は、N型AlGaAsであり、
前記移動度低減半導体は、P型でないGaAsであり、
前記化合物半導体は、InGaAsである
請求項1から請求項6の何れか一項に記載の半導体基板。 - 前記移動度低減半導体が、3.6×1018[cm−3]以下のドナー不純物を含むN型GaAsである
請求項8に記載の半導体基板。 - 前記ドナー不純物が、Si、Se、Ge、Sn、Te、およびSからなる群から選択された少なくとも一つの原子である
請求項9に記載の半導体基板。 - 2次元キャリアガスを生成する化合物半導体を形成する段階と、
前記化合物半導体上に、キャリアの移動度を前記化合物半導体における前記キャリアの移動度よりも小さくする移動度低減因子を有する移動度低減半導体を形成する段階と、
前記移動度低減半導体上に、前記化合物半導体に前記キャリアを供給するキャリア供給半導体を形成する段階と
を備える半導体基板の製造方法。 - 2次元キャリアガスを生成する化合物半導体と、前記化合物半導体にキャリアを供給するキャリア供給半導体と、前記化合物半導体と前記キャリア供給半導体との間に配置され、前記キャリアの移動度を前記化合物半導体における前記キャリアの移動度よりも小さくする移動度低減因子を有する移動度低減半導体とを含む半導体基板を準備する段階と、
前記化合物半導体上に一対のオーミック電極を配置する段階と、
前記一対のオーミック電極に電圧を印加し、印加する電圧に対応する電流値を測定する段階と、
前記電圧に対応する電流値yを、前記電圧に対応する電界強度xの近似多項式y=ax3+bx2+cxに近似する段階と、
前記近似多項式における3次項係数aの1次項係数cに対する比の絶対値|a/c|が、予め定められた値より小さいか否かを判断する段階と
を含む半導体基板の判定方法。 - 前記電界強度が−1.5[kV/cm]以上、+1.5[kV/cm]以下の範囲内で変化する場合において、前記3次項係数aの1次項係数cに対する比の絶対値|a/c|が0.037[(kV/cm)−2]未満の場合に、前記半導体基板を良品と判定する
請求項12に記載の半導体基板の判定方法。 - 2次元キャリアガスを生成し、前記2次元キャリアガスが流れるチャネルを有する化合物半導体と、
前記化合物半導体にキャリアを供給するキャリア供給半導体と、
前記化合物半導体と前記キャリア供給半導体との間に配置され、前記キャリアの移動度を前記化合物半導体における前記キャリアの移動度よりも小さくする移動度低減因子を有する移動度低減半導体と、
前記チャネルを介して相互に結合する一対のオーミック電極と、
前記一対のオーミック電極間のインピーダンスを制御する制御電極と、
を備える電子デバイス。
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US (1) | US9117892B2 (ja) |
JP (1) | JP2010263196A (ja) |
KR (1) | KR20120004409A (ja) |
CN (1) | CN102369594A (ja) |
TW (1) | TW201039377A (ja) |
WO (1) | WO2010116699A1 (ja) |
Families Citing this family (9)
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JP6186380B2 (ja) | 2012-02-23 | 2017-08-23 | センサー エレクトロニック テクノロジー インコーポレイテッド | 半導体層に対するオーミックコンタクトを含むデバイスヘテロ構造を形成することを含む方法および半導体層に対するオーミックコンタクトを含むデバイスヘテロ構造を含むデバイス |
JP5857390B2 (ja) * | 2012-03-30 | 2016-02-10 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
US10995361B2 (en) | 2017-01-23 | 2021-05-04 | Massachusetts Institute Of Technology | Multiplexed signal amplified FISH via splinted ligation amplification and sequencing |
WO2018157048A1 (en) | 2017-02-24 | 2018-08-30 | Massachusetts Institute Of Technology | Methods for examining podocyte foot processes in human renal samples using conventional optical microscopy |
US11180804B2 (en) | 2017-07-25 | 2021-11-23 | Massachusetts Institute Of Technology | In situ ATAC sequencing |
WO2019046699A1 (en) | 2017-09-01 | 2019-03-07 | Massachustetts Institute Of Technology | NON-DETERGENT GPCR BIOELECTRONIC INTERFACES COUPLED TO THE 2D S-PROTEIN NETWORK, DEVICES AND METHODS OF USE THEREOF |
JP6812961B2 (ja) * | 2017-12-25 | 2021-01-13 | 株式会社Sumco | エピタキシャル成長装置およびそれを用いた半導体エピタキシャルウェーハの製造方法 |
WO2019156957A1 (en) | 2018-02-06 | 2019-08-15 | Massachusetts Institute Of Technology | Swellable and structurally homogenous hydrogels and methods of use thereof |
WO2021113505A1 (en) | 2019-12-05 | 2021-06-10 | Massachusetts Institute Of Technology | Method for preparing a specimen for expansion microscopy |
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- 2010-04-02 CN CN2010800143734A patent/CN102369594A/zh active Pending
- 2010-04-05 JP JP2010086842A patent/JP2010263196A/ja active Pending
- 2010-04-06 TW TW99110514A patent/TW201039377A/zh unknown
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KR20120004409A (ko) | 2012-01-12 |
WO2010116699A1 (ja) | 2010-10-14 |
US20120025271A1 (en) | 2012-02-02 |
TW201039377A (en) | 2010-11-01 |
US9117892B2 (en) | 2015-08-25 |
CN102369594A (zh) | 2012-03-07 |
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